CN101268519A - 用自调整最大程序循环对非易失性存储器进行编程 - Google Patents
用自调整最大程序循环对非易失性存储器进行编程 Download PDFInfo
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- CN101268519A CN101268519A CNA2006800346770A CN200680034677A CN101268519A CN 101268519 A CN101268519 A CN 101268519A CN A2006800346770 A CNA2006800346770 A CN A2006800346770A CN 200680034677 A CN200680034677 A CN 200680034677A CN 101268519 A CN101268519 A CN 101268519A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/194,439 US7230854B2 (en) | 2005-08-01 | 2005-08-01 | Method for programming non-volatile memory with self-adjusting maximum program loop |
US11/194,439 | 2005-08-01 | ||
US11/194,827 US7023737B1 (en) | 2005-08-01 | 2005-08-01 | System for programming non-volatile memory with self-adjusting maximum program loop |
US11/194,827 | 2005-08-01 | ||
PCT/US2006/029047 WO2007016167A1 (en) | 2005-08-01 | 2006-07-26 | Programming non-volatile memory with self-adjusting maximum program loop |
Publications (2)
Publication Number | Publication Date |
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CN101268519A true CN101268519A (zh) | 2008-09-17 |
CN101268519B CN101268519B (zh) | 2011-04-06 |
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CN2006800346770A Expired - Fee Related CN101268519B (zh) | 2005-08-01 | 2006-07-26 | 用自调整最大程序循环对非易失性存储器进行编程 |
Country Status (2)
Country | Link |
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US (1) | US7230854B2 (zh) |
CN (1) | CN101268519B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103680622A (zh) * | 2012-09-14 | 2014-03-26 | 飞思卡尔半导体公司 | 具有适应性写操作的非易失性存储器(nvm) |
CN104011800A (zh) * | 2011-12-28 | 2014-08-27 | 英特尔公司 | 用于非易失性存储器阵列的存储器单元的循环耐久性延展 |
CN110556149A (zh) * | 2018-05-31 | 2019-12-10 | 北京兆易创新科技股份有限公司 | 一种抗干扰的编程方法、装置、设备及存储介质 |
CN111292790A (zh) * | 2018-12-10 | 2020-06-16 | 美光科技公司 | 编程有效时间调整 |
CN112435707A (zh) * | 2019-08-26 | 2021-03-02 | 美光科技公司 | 自适应施加电压脉冲以稳定存储器单元电压电平 |
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WO2009095902A2 (en) | 2008-01-31 | 2009-08-06 | Densbits Technologies Ltd. | Systems and methods for handling immediate data errors in flash memory |
WO2009037697A2 (en) * | 2007-09-20 | 2009-03-26 | Densbits Technologies Ltd. | Improved systems and methods for determining logical values of coupled flash memory cells |
US8117375B2 (en) * | 2007-10-17 | 2012-02-14 | Micron Technology, Inc. | Memory device program window adjustment |
US8694715B2 (en) | 2007-10-22 | 2014-04-08 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053963A2 (en) * | 2007-10-22 | 2009-04-30 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053961A2 (en) | 2007-10-25 | 2009-04-30 | Densbits Technologies Ltd. | Systems and methods for multiple coding rates in flash devices |
JP5178167B2 (ja) | 2007-12-04 | 2013-04-10 | 株式会社東芝 | 半導体記憶装置及びそのデータ書き込み方法 |
WO2009072105A2 (en) * | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications |
WO2009072103A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated bch codes and/or designation of 'first below' cells |
US8453022B2 (en) | 2007-12-05 | 2013-05-28 | Densbits Technologies Ltd. | Apparatus and methods for generating row-specific reading thresholds in flash memory |
WO2009074979A2 (en) | 2007-12-12 | 2009-06-18 | Densbits Technologies Ltd. | Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications |
US8359516B2 (en) | 2007-12-12 | 2013-01-22 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
WO2009078006A2 (en) | 2007-12-18 | 2009-06-25 | Densbits Technologies Ltd. | Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith |
US8972472B2 (en) * | 2008-03-25 | 2015-03-03 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
KR101076879B1 (ko) * | 2008-04-11 | 2011-10-25 | 주식회사 하이닉스반도체 | 셀프 부스팅을 이용한 플래시 메모리소자의 프로그램 방법 |
US8332725B2 (en) | 2008-08-20 | 2012-12-11 | Densbits Technologies Ltd. | Reprogramming non volatile memory portions |
US7768836B2 (en) * | 2008-10-10 | 2010-08-03 | Sandisk Corporation | Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits |
US8045375B2 (en) | 2008-10-24 | 2011-10-25 | Sandisk Technologies Inc. | Programming non-volatile memory with high resolution variable initial programming pulse |
US8458562B1 (en) * | 2008-12-30 | 2013-06-04 | Micron Technology, Inc. | Secondary memory element for non-volatile memory |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US8458574B2 (en) * | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US8566510B2 (en) | 2009-05-12 | 2013-10-22 | Densbits Technologies Ltd. | Systems and method for flash memory management |
US8868821B2 (en) | 2009-08-26 | 2014-10-21 | Densbits Technologies Ltd. | Systems and methods for pre-equalization and code design for a flash memory |
US8305812B2 (en) * | 2009-08-26 | 2012-11-06 | Densbits Technologies Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8400854B2 (en) * | 2009-09-11 | 2013-03-19 | Sandisk Technologies Inc. | Identifying at-risk data in non-volatile storage |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
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CN104011800A (zh) * | 2011-12-28 | 2014-08-27 | 英特尔公司 | 用于非易失性存储器阵列的存储器单元的循环耐久性延展 |
CN104011800B (zh) * | 2011-12-28 | 2017-03-08 | 英特尔公司 | 用于非易失性存储器阵列的存储器单元的循环耐久性延展 |
CN103680622A (zh) * | 2012-09-14 | 2014-03-26 | 飞思卡尔半导体公司 | 具有适应性写操作的非易失性存储器(nvm) |
CN110556149A (zh) * | 2018-05-31 | 2019-12-10 | 北京兆易创新科技股份有限公司 | 一种抗干扰的编程方法、装置、设备及存储介质 |
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CN111292790A (zh) * | 2018-12-10 | 2020-06-16 | 美光科技公司 | 编程有效时间调整 |
CN112435707A (zh) * | 2019-08-26 | 2021-03-02 | 美光科技公司 | 自适应施加电压脉冲以稳定存储器单元电压电平 |
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US7230854B2 (en) | 2007-06-12 |
CN101268519B (zh) | 2011-04-06 |
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