CN101266836A - 或非快闪存储器的字线驱动器 - Google Patents
或非快闪存储器的字线驱动器 Download PDFInfo
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- CN101266836A CN101266836A CNA2007100863311A CN200710086331A CN101266836A CN 101266836 A CN101266836 A CN 101266836A CN A2007100863311 A CNA2007100863311 A CN A2007100863311A CN 200710086331 A CN200710086331 A CN 200710086331A CN 101266836 A CN101266836 A CN 101266836A
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- word line
- transistor
- flash memory
- line driver
- quick flash
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- 239000004065 semiconductor Substances 0.000 abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 8
- 150000004706 metal oxides Chemical class 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000005039 memory span Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- Read Only Memory (AREA)
Abstract
Description
读取 | 编程-1 | 编程-2 | 区段擦除 | 软编程-1 | 软编程-2 | |
MWL0[0] | 5V | 8V | 8V | 0V | VCC | VCC |
MWL0[1:15] | 0V | 0V | -0.5V | 0V | VCC | VCC |
MWLn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC |
GM0[0] | -2V | -2V | 8V→0V | 0V | VCC | VCC |
GN0[0] | 0V | 0V | 8V→0V | 0V | VCC | VCC |
GM0[1:15] | 5V | 8V | 8V | 0V | VCC | VCC |
GN0[1:15] | 5V | 8V | 8V | 0V | VCC | VCC |
GMn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC |
GNn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC |
VNEG[0] | 0V | 0V | -0.5V | -7.5V | -0.5V | 0V |
VNEG[n] | 0V | 0V | 0V | 0V | 0V | 0V |
LWL0[0] | 5V | 8V | 8V | -7.5V | -0.5V | 0V |
LWL0[1:15] | 0V | 0V | -0.5V | -7.5V | -0.5V | 0V |
LWL0[16:255] | 0V | 0V | -0.5V | -7.5V | -0.5V | 0V |
LWLn[0:255] | 0V | 0V | 0V | 0V | 0V | 0V |
读取 | 编程-1 | 编程-2 | 区块擦除 | 区段擦除 | 软编程-1 | 软编程-2 | |
MWL0[0] | 5V | 8V | 8V | -7.5V | -7.5V | VCC | VCC |
MWL0[1:15] | 0V | 0V | -0.5V | -7.5V | 2.5V | VCC | VCC |
MWLn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
GM0[0] | -2V | -2V | 8V →0V | -10V | -10V | VCC | VCC |
GN0[0] | 0V | 0V | 8V →0V | -10V | -10V | VCC | VCC |
GM0[1:15] | 5V | 8V | 8V | -10V | -10V | VCC | VCC |
GN0[1:15] | 5V | 8V | 8V | -10V | -10V | VCC | VCC |
GMn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
GNn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
VNEG[0] | 0V | 0V | -0.5V | -7.5V | -7.5V | -0.5V | 0V |
VNEG[n] | 0V | 0V | 0V | 0V | 0V | 0V | 0V |
LWL0[0] | 5V | 8V | 8V | -7.5V | -75V | -0.5V | 0V |
LWL0[1:15] | 0V | 0V | -0.5V | -7.5V | -7.5V | -0.5V | 0V |
LWL0[16:255] | 0V | 0V | -0.5V | -7.5V | 2.5V | -0.5V | 0V |
LWLn[0:255] | 0V | 0V | 0V | 0V | 0V | 0V | 0V |
读取 | 编程-1 | 编程-2 | 区块擦除 | 区段擦除 | 软编程-1 | 软编程2 | |
MWL0[0] | 5V | 8V | 8V | -7.5V | -7.5V | -0.5V | 0V |
MWL0[1:15] | 0V | 0V | -0.5V | -7.5V | 2.5V | -0.5V | 0V |
MWLn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
GM0[0] | 8V | 10.5V | 10.5V | 5V | 5V | 0V | 0V |
GN0[0] | 0V | 0V | -0.5V | -7.5V | -7.5V | 8V | 8V |
GM0[1:15] | 0V | 0V | 0V | 5V | 5V | 0V | 0V |
GN0[1:15] | 5V | 8V | 8V | -7.5V | -7.5V | 8V | 8V |
GMn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
GNn[0:15] | VCC | VCC | VCC | VCC | VCC | VCC | VCC |
VNEG[0] | 0V | 0V | -0.5V | -7.5V | -7.5V | -0.5V | 0V |
VNEG[n] | 0V | 0V | 0V | 0V | 0V | 0V | 0V |
LWL0[0] | 5V | 8V | 8V | -7.5V | -7.5V | -0.5V | 0V |
LWL0[1:15] | 0V | 0V | -0.5V | -7.5V | -7.5V | -0.5V | 0V |
LWL0[16:255] | 0V | 0V | -0.5V | -7.5V | 2.5V | -0.5V | 0V |
LWLn[0:255] | 0V | 0V | 0V | 0V | 0V | 0V | 0V |
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100863311A CN101266836B (zh) | 2007-03-13 | 2007-03-13 | 或非快闪存储器的字线驱动器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100863311A CN101266836B (zh) | 2007-03-13 | 2007-03-13 | 或非快闪存储器的字线驱动器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010193236.3A Division CN101853700B (zh) | 2007-03-13 | 2007-03-13 | 或非快闪存储器及其字线驱动器电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101266836A true CN101266836A (zh) | 2008-09-17 |
CN101266836B CN101266836B (zh) | 2011-08-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007100863311A Active CN101266836B (zh) | 2007-03-13 | 2007-03-13 | 或非快闪存储器的字线驱动器 |
Country Status (1)
Country | Link |
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CN (1) | CN101266836B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103310830A (zh) * | 2012-03-12 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | 字线驱动电路及存储器电路 |
CN103390426B (zh) * | 2012-05-07 | 2016-04-13 | 旺宏电子股份有限公司 | 通过使用回复偏压来减少存储器中擦除干扰的方法与装置 |
CN105825881A (zh) * | 2015-01-09 | 2016-08-03 | 旺宏电子股份有限公司 | 记忆体 |
US11631464B2 (en) | 2020-05-21 | 2023-04-18 | Macronix International Co., Ltd. | Memory apparatus and associated control method for reducing erase disturb of non-volatile memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5506816A (en) * | 1994-09-06 | 1996-04-09 | Nvx Corporation | Memory cell array having compact word line arrangement |
-
2007
- 2007-03-13 CN CN2007100863311A patent/CN101266836B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103310830A (zh) * | 2012-03-12 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | 字线驱动电路及存储器电路 |
CN103310830B (zh) * | 2012-03-12 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | 字线驱动电路及存储器电路 |
CN103390426B (zh) * | 2012-05-07 | 2016-04-13 | 旺宏电子股份有限公司 | 通过使用回复偏压来减少存储器中擦除干扰的方法与装置 |
CN105825881A (zh) * | 2015-01-09 | 2016-08-03 | 旺宏电子股份有限公司 | 记忆体 |
CN105825881B (zh) * | 2015-01-09 | 2019-01-01 | 旺宏电子股份有限公司 | 记忆体 |
US11631464B2 (en) | 2020-05-21 | 2023-04-18 | Macronix International Co., Ltd. | Memory apparatus and associated control method for reducing erase disturb of non-volatile memory |
Also Published As
Publication number | Publication date |
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CN101266836B (zh) | 2011-08-10 |
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