CN101256938A - 吸收层备选及应用技术 - Google Patents

吸收层备选及应用技术 Download PDF

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Publication number
CN101256938A
CN101256938A CNA2008100063787A CN200810006378A CN101256938A CN 101256938 A CN101256938 A CN 101256938A CN A2008100063787 A CNA2008100063787 A CN A2008100063787A CN 200810006378 A CN200810006378 A CN 200810006378A CN 101256938 A CN101256938 A CN 101256938A
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CN
China
Prior art keywords
substrate
depositing
absorber layer
annealing
carbon black
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008100063787A
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English (en)
Chinese (zh)
Inventor
约瑟夫·M·拉内什
布鲁斯·E·亚当斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101256938A publication Critical patent/CN101256938A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Braking Arrangements (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNA2008100063787A 2007-03-02 2008-02-29 吸收层备选及应用技术 Pending CN101256938A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/681,343 2007-03-02
US11/681,343 US7867868B2 (en) 2007-03-02 2007-03-02 Absorber layer candidates and techniques for application

Publications (1)

Publication Number Publication Date
CN101256938A true CN101256938A (zh) 2008-09-03

Family

ID=39413092

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008100063787A Pending CN101256938A (zh) 2007-03-02 2008-02-29 吸收层备选及应用技术

Country Status (6)

Country Link
US (1) US7867868B2 (https=)
EP (1) EP1965419B1 (https=)
JP (1) JP5422132B2 (https=)
KR (1) KR100931766B1 (https=)
CN (1) CN101256938A (https=)
TW (1) TWI430370B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
CN104412405A (zh) * 2012-07-03 2015-03-11 剑桥显示技术有限公司 有机电子器件制造技术
CN105977153A (zh) * 2016-05-17 2016-09-28 上海华力微电子有限公司 超浅结退火方法
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

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US7772064B2 (en) * 2007-03-05 2010-08-10 United Microelectronics Corp. Method of fabricating self-aligned contact
US7947584B2 (en) * 2008-05-02 2011-05-24 Applied Materials, Inc. Suitably short wavelength light for laser annealing of silicon in DSA type systems
US20120015459A1 (en) * 2010-07-15 2012-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal Leveling for Semiconductor Devices
US8603575B1 (en) * 2010-10-06 2013-12-10 Nanosolar, Inc. Thin-film absorber formation method
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
JP5770880B2 (ja) * 2014-04-08 2015-08-26 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
CN105047560A (zh) * 2015-07-01 2015-11-11 复旦大学 微波退火工艺
CN106099079A (zh) * 2016-08-26 2016-11-09 宁德时代新能源科技股份有限公司 二次电池负极材料，其制备方法及含有该负极材料的电池

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US3421967A (en) * 1965-03-03 1969-01-14 Kaumagraph Co Decorated thermosetting plastic article and method of producing same
US3520656A (en) * 1966-03-30 1970-07-14 Du Pont Silicon carbide compositions
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KR100365414B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for forming ultra-shallow junction using laser annealing process
US6660449B2 (en) * 2001-10-19 2003-12-09 Eastman Kodak Company Heat-sensitive compositions and imaging member containing carbon black and methods of imaging and printing
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
KR101254107B1 (ko) * 2003-10-03 2013-04-12 어플라이드 머티어리얼스, 인코포레이티드 다이나믹 표면 어닐링 프로세싱을 위한 흡수층
US7109087B2 (en) 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
JP5057261B2 (ja) * 2005-10-25 2012-10-24 東海カーボン株式会社 カーボンブラック水性分散体及びその製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
CN104412405A (zh) * 2012-07-03 2015-03-11 剑桥显示技术有限公司 有机电子器件制造技术
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
CN105977153A (zh) * 2016-05-17 2016-09-28 上海华力微电子有限公司 超浅结退火方法
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

Also Published As

Publication number Publication date
EP1965419B1 (en) 2013-07-03
EP1965419A2 (en) 2008-09-03
JP2008270746A (ja) 2008-11-06
US7867868B2 (en) 2011-01-11
KR20080080936A (ko) 2008-09-05
TWI430370B (zh) 2014-03-11
JP5422132B2 (ja) 2014-02-19
KR100931766B1 (ko) 2009-12-14
TW200845225A (en) 2008-11-16
EP1965419A3 (en) 2011-03-23
US20080214014A1 (en) 2008-09-04

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Open date: 20080903