TWI430370B - 吸收層及其應用技術 - Google Patents

吸收層及其應用技術 Download PDF

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Publication number
TWI430370B
TWI430370B TW097107143A TW97107143A TWI430370B TW I430370 B TWI430370 B TW I430370B TW 097107143 A TW097107143 A TW 097107143A TW 97107143 A TW97107143 A TW 97107143A TW I430370 B TWI430370 B TW I430370B
Authority
TW
Taiwan
Prior art keywords
substrate
absorbing layer
carbon black
annealing
depositing
Prior art date
Application number
TW097107143A
Other languages
English (en)
Chinese (zh)
Other versions
TW200845225A (en
Inventor
拉尼許喬瑟夫Ｍ
亞當布魯斯Ｅ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200845225A publication Critical patent/TW200845225A/zh
Application granted granted Critical
Publication of TWI430370B publication Critical patent/TWI430370B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Braking Arrangements (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW097107143A 2007-03-02 2008-02-29 吸收層及其應用技術 TWI430370B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/681,343 US7867868B2 (en) 2007-03-02 2007-03-02 Absorber layer candidates and techniques for application

Publications (2)

Publication Number Publication Date
TW200845225A TW200845225A (en) 2008-11-16
TWI430370B true TWI430370B (zh) 2014-03-11

Family

ID=39413092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107143A TWI430370B (zh) 2007-03-02 2008-02-29 吸收層及其應用技術

Country Status (6)

Country Link
US (1) US7867868B2 (https=)
EP (1) EP1965419B1 (https=)
JP (1) JP5422132B2 (https=)
KR (1) KR100931766B1 (https=)
CN (1) CN101256938A (https=)
TW (1) TWI430370B (https=)

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US7772064B2 (en) * 2007-03-05 2010-08-10 United Microelectronics Corp. Method of fabricating self-aligned contact
US7947584B2 (en) * 2008-05-02 2011-05-24 Applied Materials, Inc. Suitably short wavelength light for laser annealing of silicon in DSA type systems
US20120015459A1 (en) * 2010-07-15 2012-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal Leveling for Semiconductor Devices
US8603575B1 (en) * 2010-10-06 2013-12-10 Nanosolar, Inc. Thin-film absorber formation method
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
GB201211786D0 (en) * 2012-07-03 2012-08-15 Cambridge Display Tech Ltd Organic electronic device manufacturing techniques
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
JP5770880B2 (ja) * 2014-04-08 2015-08-26 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
CN105047560A (zh) * 2015-07-01 2015-11-11 复旦大学 微波退火工艺
CN105977153B (zh) * 2016-05-17 2019-09-17 上海华力微电子有限公司 超浅结退火方法
CN106099079A (zh) * 2016-08-26 2016-11-09 宁德时代新能源科技股份有限公司 二次电池负极材料，其制备方法及含有该负极材料的电池
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

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US2688576A (en) * 1949-12-21 1954-09-07 St Regis Paper Co Electrically conductive resinous laminate
US3421967A (en) * 1965-03-03 1969-01-14 Kaumagraph Co Decorated thermosetting plastic article and method of producing same
US3520656A (en) * 1966-03-30 1970-07-14 Du Pont Silicon carbide compositions
US4025661A (en) * 1972-11-13 1977-05-24 Rca Corporation Method of making viewing-screen structure for a cathode-ray tube
US4664768A (en) * 1985-03-28 1987-05-12 Westinghouse Electric Corp. Reinforced composites made by electro-phoretically coating graphite or carbon
US5308481A (en) * 1992-06-02 1994-05-03 Analytical Bio-Chemistry Laboratories, Inc. Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography
US5461123A (en) * 1994-07-14 1995-10-24 Union Carbide Chemicals & Plastics Technology Corporation Gas phase fluidized bed polyolefin polymerization process using sound waves
US6276072B1 (en) 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
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US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100365414B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for forming ultra-shallow junction using laser annealing process
US6660449B2 (en) * 2001-10-19 2003-12-09 Eastman Kodak Company Heat-sensitive compositions and imaging member containing carbon black and methods of imaging and printing
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
KR101254107B1 (ko) * 2003-10-03 2013-04-12 어플라이드 머티어리얼스, 인코포레이티드 다이나믹 표면 어닐링 프로세싱을 위한 흡수층
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US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
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Also Published As

Publication number Publication date
EP1965419B1 (en) 2013-07-03
EP1965419A2 (en) 2008-09-03
CN101256938A (zh) 2008-09-03
JP2008270746A (ja) 2008-11-06
US7867868B2 (en) 2011-01-11
KR20080080936A (ko) 2008-09-05
JP5422132B2 (ja) 2014-02-19
KR100931766B1 (ko) 2009-12-14
TW200845225A (en) 2008-11-16
EP1965419A3 (en) 2011-03-23
US20080214014A1 (en) 2008-09-04

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