JP5422132B2 - アブソーバ層の候補および塗布技術 - Google Patents

アブソーバ層の候補および塗布技術 Download PDF

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JP5422132B2
JP5422132B2 JP2008052417A JP2008052417A JP5422132B2 JP 5422132 B2 JP5422132 B2 JP 5422132B2 JP 2008052417 A JP2008052417 A JP 2008052417A JP 2008052417 A JP2008052417 A JP 2008052417A JP 5422132 B2 JP5422132 B2 JP 5422132B2
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substrate
absorber layer
temperature
carbon black
suspension
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JP2008270746A (ja
JP2008270746A5 (https=
Inventor
エム． ラニッシュ ジョセフ
イー． アダムス ブルース
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Braking Arrangements (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2008052417A 2007-03-02 2008-03-03 アブソーバ層の候補および塗布技術 Active JP5422132B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/681,343 2007-03-02
US11/681,343 US7867868B2 (en) 2007-03-02 2007-03-02 Absorber layer candidates and techniques for application

Publications (3)

Publication Number Publication Date
JP2008270746A JP2008270746A (ja) 2008-11-06
JP2008270746A5 JP2008270746A5 (https=) 2011-04-28
JP5422132B2 true JP5422132B2 (ja) 2014-02-19

Family

ID=39413092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008052417A Active JP5422132B2 (ja) 2007-03-02 2008-03-03 アブソーバ層の候補および塗布技術

Country Status (6)

Country Link
US (1) US7867868B2 (https=)
EP (1) EP1965419B1 (https=)
JP (1) JP5422132B2 (https=)
KR (1) KR100931766B1 (https=)
CN (1) CN101256938A (https=)
TW (1) TWI430370B (https=)

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US7772064B2 (en) * 2007-03-05 2010-08-10 United Microelectronics Corp. Method of fabricating self-aligned contact
US7947584B2 (en) * 2008-05-02 2011-05-24 Applied Materials, Inc. Suitably short wavelength light for laser annealing of silicon in DSA type systems
US20120015459A1 (en) * 2010-07-15 2012-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal Leveling for Semiconductor Devices
US8603575B1 (en) * 2010-10-06 2013-12-10 Nanosolar, Inc. Thin-film absorber formation method
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
GB201211786D0 (en) * 2012-07-03 2012-08-15 Cambridge Display Tech Ltd Organic electronic device manufacturing techniques
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
JP5770880B2 (ja) * 2014-04-08 2015-08-26 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
CN105047560A (zh) * 2015-07-01 2015-11-11 复旦大学 微波退火工艺
CN105977153B (zh) * 2016-05-17 2019-09-17 上海华力微电子有限公司 超浅结退火方法
CN106099079A (zh) * 2016-08-26 2016-11-09 宁德时代新能源科技股份有限公司 二次电池负极材料，其制备方法及含有该负极材料的电池
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

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US2688576A (en) * 1949-12-21 1954-09-07 St Regis Paper Co Electrically conductive resinous laminate
US3421967A (en) * 1965-03-03 1969-01-14 Kaumagraph Co Decorated thermosetting plastic article and method of producing same
US3520656A (en) * 1966-03-30 1970-07-14 Du Pont Silicon carbide compositions
US4025661A (en) * 1972-11-13 1977-05-24 Rca Corporation Method of making viewing-screen structure for a cathode-ray tube
US4664768A (en) * 1985-03-28 1987-05-12 Westinghouse Electric Corp. Reinforced composites made by electro-phoretically coating graphite or carbon
US5308481A (en) * 1992-06-02 1994-05-03 Analytical Bio-Chemistry Laboratories, Inc. Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography
US5461123A (en) * 1994-07-14 1995-10-24 Union Carbide Chemicals & Plastics Technology Corporation Gas phase fluidized bed polyolefin polymerization process using sound waves
US6276072B1 (en) 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
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KR100365414B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for forming ultra-shallow junction using laser annealing process
US6660449B2 (en) * 2001-10-19 2003-12-09 Eastman Kodak Company Heat-sensitive compositions and imaging member containing carbon black and methods of imaging and printing
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
KR101254107B1 (ko) * 2003-10-03 2013-04-12 어플라이드 머티어리얼스, 인코포레이티드 다이나믹 표면 어닐링 프로세싱을 위한 흡수층
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Also Published As

Publication number Publication date
EP1965419B1 (en) 2013-07-03
EP1965419A2 (en) 2008-09-03
CN101256938A (zh) 2008-09-03
JP2008270746A (ja) 2008-11-06
US7867868B2 (en) 2011-01-11
KR20080080936A (ko) 2008-09-05
TWI430370B (zh) 2014-03-11
KR100931766B1 (ko) 2009-12-14
TW200845225A (en) 2008-11-16
EP1965419A3 (en) 2011-03-23
US20080214014A1 (en) 2008-09-04

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