WO2016133640A1 - Apparatus for adjustable light source - Google Patents
Apparatus for adjustable light source Download PDFInfo
- Publication number
- WO2016133640A1 WO2016133640A1 PCT/US2016/014141 US2016014141W WO2016133640A1 WO 2016133640 A1 WO2016133640 A1 WO 2016133640A1 US 2016014141 W US2016014141 W US 2016014141W WO 2016133640 A1 WO2016133640 A1 WO 2016133640A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adjustable bracket
- arm
- adjustment
- adjuster
- radiation
- Prior art date
Links
- 230000005855 radiation Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- Implementations of the present disclosure generally relate to an adjustable light source. More specifically, implementations described herein generally relate to apparatus, systems and methods for controlling the position of a light source in a process chamber.
- RTP rapid thermal processing
- RTP rapid thermal processing
- radiation sources In rapid thermal processing (RTP), heat energy radiates from radiation sources into the process chamber and onto a semiconductor substrate in the processing chamber. In this manner, the substrate is heated to a processing temperature.
- the radiation sources may operate at elevated temperatures. Not all of the radiant energy provided by the radiation sources end up actually heating the wafer. Some of the radiant energy, for example energy emitted in all directions from a point source, is absorbed by chamber components, especially the reflective components in the radiation field.
- Temperature uniformity enables uniform processing of the substrate (e.g. layer thickness, resistivity, etch depth) for thermal processes such as film deposition, oxide growth, and etching. Furthermore, temperature uniformity helps prevent thermal stress- induced substrate damage such as warpage, defect generation, and substrate slip.
- the individual radiation sources in chambers may be horizontal during first installation with the emitter of each source oriented along a plane defined by the substrate. Over time, the emitters may sag due to gravitational forces, thermal cycling, or other reasons. This sag can cause a change in distance between emitter and substrate, which can results in temperature variation in the substrate.
- an apparatus for processing a semiconductor substrate can include a process chamber comprising an enclosure defining an internal volume; a substrate support disposed in the internal volume of the process chamber; and a plurality of radiation emitters; an adjustable bracket comprising a base connected to at least one of the radiation emitters and an adjustable bracket connected to the base, the adjustable bracket being pivotably connected to the process chamber; and an adjuster connected with the adjustable bracket.
- a system for processing a substrate can include a process chamber comprising an enclosure, the enclosure having an upper portion and a lower portion defining a processing region; a substrate support disposed in the processing region; a plurality of lamp modules connected to the upper portion for delivering radiation to the processing region; and an adjustable bracket connected to at least one of the lamp modules; and an adjuster connected with the adjustable bracket, the adjuster providing provide a force for pivoting the adjustable bracket.
- an apparatus for processing a semiconductor substrate can include a plurality of radiation modules positioned in an upper portion of a process chamber, each radiation module comprising: a radiation source; a base connected to the radiation source; an adjustable bracket connected to the radiation source, the adjustable bracket comprising: a base connected to the radiation source; a first member comprising a first arm and a second arm, wherein the first arm is connected to the base; a second member connected to the first member by a pivot; and a spring connected between the second arm of the first member and the second member; and an adjuster connected with the first member to provide a pivoting force to the first member.
- Figure 1 is a schematic cross-sectional view of one implementation of a processing chamber.
- Figure 2 is a side view of a radiation module with an adjustable orientation according to one implementation.
- Figure 3 is a side view of a radiation module with an adjustable orientation according to another implementation.
- Figure 4A is a side view of a radiation module with an adjustable orientation according to another implementation.
- Figure 4B is a detailed view of an adjuster of the radiation module of Figure 4A, according to one implementation.
- Figure 5 is a side view of a radiation module with an adjustable position and an adjustable orientation, according to another implementation.
- Figure 6 is a side view of a radiation module with an adjustable position and an adjustable rotation, according to one implementation.
- Implementations disclosed herein include apparatus and systems for positioning and orienting a radiation source in a thermal processing chamber. After hours of operation, the emitter in a radiation source may shift position, orientation or both. Disclosed here are various implementations of an adjustment apparatus that enables adjustment of the position and orientation of the radiation source to compensate for a shift in the emitter. The implementations of the apparatus and systems are more clearly described with reference to the figures below.
- FIG. 1 is a schematic cross-sectional view of a process chamber 100 configured for epitaxial processing, which may be part of a CENTURA® integrated processing system available from Applied Materials, Inc., of Santa Clara, California.
- the process chamber 100 includes housing structure 101 made of a process resistant material, such as aluminum or stainless steel, for example 316L stainless steel.
- the housing structure 101 encloses various functioning elements of the process chamber 100, such as a enclosure 130, which includes an upper chamber 105, and a lower chamber 124, and which defines a processing volume.
- Reactive species are provided to the enclosure 130, which may be quartz, by a gas distribution assembly 150, and processing byproducts are removed from processing volume 1 18 by an port 138, which is typically in communication with a vacuum source (not shown).
- a substrate support 1 17 is adapted to receive a substrate 1 14 that is transferred to the processing volume 1 18.
- the substrate support 1 17 may be made of a ceramic material or a graphite material coated with a silicon material, such as silicon carbide, or other process resistant material. Reactive species from precursor reactant materials are applied to the exposed surface of the substrate 1 14, and byproducts may be subsequently removed from the surface of the substrate 1 14.
- Heating of the substrate 1 14 and/or the processing volume 1 18 may be provided by radiation modules, such as upper lamp modules 1 1 OA and lower lamp modules 1 10B. Though described as upper and lower lamp module, this is not intended to be limiting. The implementations described herein are equally applicable to chambers in other orientations, such as vertical chambers.
- emitters may be lamps with filaments or arrays of solid state emitters, such as LED's.
- lamp modules are used as exemplary radiation emitters.
- the substrate support 1 17 may rotate about a central axis 102 of the substrate support while moving in a direction parallel to the central axis 102 by displacement of support shaft 140.
- Lift pins 170 are provided that penetrate the surface 1 16 of the substrate support 1 17 and lift the substrate 1 14 above the substrate support 1 17 for transportation into and out of the processing chamber.
- the lift pins 170 are coupled to the support shaft 140 by a lift pin collar 174.
- the upper lamp modules 1 1 OA and lower lamp modules 1 10B are infrared (IR) lamps. Each lamp typically includes a filament 190, which produces energy or radiation.
- the energy or radiation from upper lamp modules 1 1 OA travels through upper window 104 of upper chamber 105.
- energy or radiation from lower lamp modules 1 10B travels through the lower portion 103 of lower chamber 124.
- Cooling gases for upper chamber 105 if needed, enter through a port 1 12 and exit through a port 1 13.
- Precursor reactant materials, as well as diluent, purge and vent gases for the chamber 100 enter through gas distribution assembly 150 and exit through port 138.
- the upper lamp modules 1 1 OA are may be held by an adjustable bracket 1 1 1 .
- the adjustable bracket 1 1 1 can pivot with relation to the chamber such that the upper lamp modules 1 1 OA can change position within the upper chamber 105. Implementations of adjustable brackets 1 1 1 are explained in more detail with reference to Figures 2 - 4.
- the radiation used to energize reactive species and assist in adsorption of reactants and desorption of process byproducts from the surface 1 16 of substrate 1 14 may range from about 0.8 ⁇ to about 1 .2 ⁇ , for example, between about 0.95 ⁇ to about 1 .05 ⁇ . Combinations of various wavelengths may be provided depending, for example, on the composition of the film which is being epitaxially grown.
- the lamp modules 1 1 OA and 1 10B may be ultraviolet (UV) light sources, for example Excimer lamps.
- UV light sources may be used in combination with IR light sources in one or both of the upper chamber 105 and lower chamber 124.
- the component gases enter the processing volume 1 18 via gas distribution assembly 150 through port 158, which may have an inlet cap 154, and through passage 152N.
- the inlet cap 154 may be a nozzle in some implementations.
- the gas distribution assembly 150 may include a tubular heating element 156 disposed in a conduit 224N to heat the processes gases to a desired temperature before they enter the processing chamber. Gas flows from the gas distribution assembly 150 and exits through port 138 as shown at 122. Combinations of component gases, which are used to clean/passivate a substrate surface, or to form the silicon and/or germanium-containing film that is being epitaxially grown, are typically mixed prior to entry into the processing volume.
- the overall pressure in the processing volume 1 18 may be adjusted by a valve (not shown) on the port 138. At least a portion of the interior surface of the processing volume 1 18 is covered by a liner 131 .
- the liner 131 comprises a quartz material that is opaque. In this manner, the chamber wall is insulated from the heat in the processing volume 1 18.
- the temperature of surfaces in the processing volume 1 18 may be controlled within a temperature range of about 200°C to about 600°C, or greater, by the flow of a cooling gas, which enters through a port 1 12 and exits through port 1 13, in combination with radiation from upper lamp modules 1 1 OA positioned above upper window 104.
- the temperature in the lower chamber 124 may be controlled within a temperature range of about 200°C to about 600°C or greater, by adjusting the speed of a blower unit which is not shown, and by radiation from the lower lamp modules 1 10B disposed below lower chamber 124.
- the pressure in the processing volume 1 18 may be between about 0.1 Torr to about 600 Torr, such as between about 5 Torr to about 30 Torr.
- the temperature on a surface of the substrate 1 14 may be controlled by power adjustment to the lower lamp modules 1 10B in lower chamber 124, or by power adjustment to both the upper lamp modules 1 1 OA overlying upper chamber 105, and the lower lamp modules 1 10B in lower chamber 124.
- the power density in the processing volume 1 18 may be between about 40 W/cm 2 to about 400 W/cm 2 , such as about 80 W/cm 2 to about 120 W/cm 2 .
- the gas distribution assembly 150 is disposed normal to, or in a radial direction 106 relative to, the central axis 102 of the chamber 100 or substrate 1 14.
- the gas distribution assembly 150 is adapted to flow process gases in a radial direction 106 across, or parallel to, a surface of the substrate 1 14.
- the process gases are preheated at the point of introduction to the chamber 100 to initiate preheating of the gases prior to introduction to the processing volume 1 18, and/or to break specific bonds in the gases.
- surface reaction kinetics may be modified independently from the thermal temperature of the substrate 1 14.
- FIG. 2 depicts the upper lamp module 1 1 OA with an adjustable bracket 200, according to an implementation.
- the adjustable bracket 200 includes a base 202 that connects to the upper lamp module 1 10A, a first member 204 and a second member 206.
- the base 202 can be composed of materials which are compatible with electrically conductive and radiation producing components.
- the base 202 is composed of a ceramic.
- the base 202 which may be a lamp base, can be connected to the first member 204 and the second member 206.
- the first member 204 can be connected to the base 202.
- “connected with” indicates that the connection between two objects may contain an intervening object whereas "connected to” indicates that the connection between two objects is direct.
- the intervening object may be referred to as being "connected between” the two objects.
- the first member 204 can have one or more arms, shown here as a first arm 208 and a second arm 212. The one or more arms can connect the first member 204 with the second member 206 at one or more connection points.
- the first arm 208 is connected with the second member 206 by a spring 210, which may be a coil spring, a leaf spring, or any other type of spring.
- the second arm 212 is connected to the second member 206 by a pivot 214, shown here as a bolt.
- the second member 206 is connected to the chamber 100 by connectors 216.
- An adjuster 218, shown here as a micrometer, is connected with the first member 204 and is positioned between the first member 204 and the second member 206. In this implementation, the base of the adjuster 218 rests on a portion of the second member 206. However, it is not necessary that the adjuster 218 contact the second member 206.
- the filament 190 of the upper lamp module 1 10A produces energy or radiation which is used in thermal processing of the substrate 1 14. After a certain number of cycles, the filament 190 may begin to change position and/or orientation, such as by sag toward the direction of gravitational force, as when the filament 190 sags toward the substrate 1 14. The position of an object is with consideration of a three dimensional space.
- the changing of position and orientation of the filament 190 will affect the amount of radiation delivered through the upper window 104 of upper chamber 105 and thus to the substrate 1 14.
- the adjuster 218 can be adjusted to provide a first force against a wall, such as a portion of the second member 206, and against the first member 204.
- the first member 204 will pivot with relation to the second member 206 at the pivot 214.
- the upper lamp module 1 1 OA and the filament 190 will be repositioned in a controlled fashion.
- the spring 210 provides force in the opposite direction to the force of the adjuster 218, such that the first member 204 can be repositioned both up and down based on the desires of the user.
- FIG. 3 depicts the upper lamp module 1 1 OA in connection with an adjustable bracket 300, according to another implementation.
- the adjustable bracket 300 includes a base 302 which is connected to the upper lamp module 1 1 OA.
- the base 302 can be composed of materials as descried with reference to the base 202 of Figure 2.
- the base 302 is connected to a first member 304 and a second member 306.
- the first member 304 can have a one or more arms, shown here as a first arm 308 and a second arm 312.
- the first arm 308 is connected with the second member 306 using a spring 310.
- the second arm 312 is connected to the second member 306 using a pivot 314, shown here as a bolt.
- the second member 306 is connected to the chamber 100 by connectors 316.
- an adjustment bolt 318 is connected with the first member 304 and is positioned between the first member 304 and the second member 306 with the base of the adjustment bolt 318 resting on a portion of the second member 306.
- the adjustment bolt 318 can be any threaded rod with a known pitch.
- the filament 190 of the upper lamp module 1 1 OA produces energy or radiation which is used in thermal processing of the substrate 1 14. After a certain number of cycles, the filament 190 may begin to sag as described above with reference to Figure 2.
- the adjustment bolt 318 can be adjusted to provide a first force against a wall, such as a portion of the second member 306, and against the first member 304. As force is applied from the adjustment bolt 318, the first member 304 will pivot with relation to the second member 306 at the pivot 314. As the first member 304 pivots, the upper lamp module 1 1 OA and the filament 190 will be repositioned in a controlled fashion.
- the spring 310 provides force in the opposite direction to the force of the adjustment bolt 318, such that the first member 304 can be repositioned both up and down based on the desires of the user.
- an actuator may be used in place of the adjuster 218, the adjustment bolt 318, the spring 210, and/or the spring 310.
- the actuator may be remotely controlled, such that the user does not need to manually adjust the height of the upper lamp modules 1 1 OA.
- the actuator is controlled using a computer configured to perform said operations.
- a single device for providing a controlled directional force is used to apply force for a plurality of the upper lamp modules 1 10A.
- FIG 4A depicts the upper lamp module 1 1 OA in connection with an adjustable bracket 400, according to another implementation.
- the adjustable bracket 400 includes a base 402 connected to the upper lamp module 1 1 OA.
- the base 402 can be composed of materials as descried with reference to the base 202 of Figure 2.
- the base 402 is connected to an adjustable bracket 404.
- the adjustable bracket 404 is shown here as a unibody design with a zigzagging configuration, thus creating two surfaces, an upper surface 406 and a lower surface 408.
- the upper surface 406 is connected to the base 402.
- the lower surface 408 connects with the chamber 100 using a plurality of spring-loaded bolts, depicted here as spring-loaded bolt 410 and spring-loaded bolt 412.
- the spring-loaded bolts 410 and 412 are elongated bolts with springs positioned between the head of the elongated bolt and a surface, shown here as the lower surface 408.
- An adjustment wedge 414 can be positioned at an edge of the lower surface 408.
- Figure 4B provides a more detailed view of the adjustment wedge 414, according to one implementation.
- the adjustment wedge 414 can have an angled wall 420, a supporting wall 422, a front wall 424, a back wall 426 and two side walls 428.
- the angled wall 420 forms an upper surface of the adjustment wedge 414, allowing for a reduced height between the back wall 426 and the front wall 424.
- the supporting wall 422 is substantially opposite the angled wall 420.
- the adjustment wedge 414 can move along a track (not shown), where the track is in connection with the supporting wall, 422, to provide precise movement.
- the back wall 426 is opposite to an adjustment support 416.
- the adjustment support 416 is depicted as being an L-shaped device. However, the shape of the adjustment support 416 is not intended to be limiting.
- the adjustment support 416 may have one or more adjustment bolts 418 formed through a wall in the direction of the adjustment wedge 414.
- the adjustment bolts 418 may be any threaded rod with a known pitch.
- the filament 190 of the upper lamp module 1 1 OA produces energy or radiation which is used in thermal processing of the substrate 1 14. After a certain number of cycles, the filament 190 may begin to sag as described above with reference to Figure 2.
- the adjustment bolt 418 can be adjusted to provide a first force against back wall 426 and against the adjustment support 416. As force is applied from the adjustment bolt 418, the adjustment wedge 414 will move or slide with relation to the adjustment support 416. The adjustment wedge 414 will then slide under the lower surface 408 of the base 402. The force form the adjustment wedge 414 will cause one or more of the spring-loaded bolts 410 and 412 to compress and causing the adjustable bracket 404 to pivot.
- the adjustable bracket 404 pivots about an axis perpendicular to a central axis of the upper lamp module 1 1 OA because the spring of the spring-loaded bolt 412 nearest the adjustment wedge 414 compresses more than springs of spring-loaded bolts 410 and 412 further from the adjustment wedge 414.
- the spring-loaded bolts 410 and 412 provide force in the opposite direction to the force of the adjustment wedge 414, such that the adjustable bracket 404 can be repositioned both up and down based on the desires of the user.
- the adjustment wedge 414 will be calibrated on all sides to ensure that precise tilt of the upper lamp module 1 1 OA is achieved.
- the adjustment wedge 414 can be mounted either on front side (as shown in Figure 4A) or rear side of base 402.
- FIG. 5 depicts the upper lamp module 1 1 OA in connection with an adjustable bracket 500, according to another implementation.
- the adjustable bracket 500 includes a base 502 connected to the upper lamp module 1 1 OA.
- the base 502 can be composed of materials as descried with reference to the base 202 of Figure 2.
- the base 502 is connected to an adjustable bracket 504.
- the adjustable bracket 504 is shown here as a unibody design with a zigzagging configuration, thus creating two surfaces, an upper surface 506 and a lower surface 508.
- the upper surface 506 is connected to the base 502.
- the lower surface 508 connects with the chamber 100 using a plurality of spring-loaded bolts, depicted here as spring-loaded bolt 510 and spring-loaded bolt 512.
- the spring-loaded bolts 510 and 512 are elongated bolts with springs positioned between the head of the elongated bolt and a surface, shown here as the lower surface 508.
- a plurality of adjustment wedges can be positioned at an edge of the lower surface 508.
- the adjustment wedges 514a and 514b have an angled wall, a supporting wall, a front wall, a rear wall and two side walls, shown and described with reference to Figure 4B as angled wall 420, a supporting wall 422, a front wall 424, a back wall 426 and two side walls
- the adjustment wedges 514a and 514b can move along a track (not shown), where the track is in connection with the supporting wall to provide precise movement.
- the back walls of adjustment wedges 514a and 514b are opposite to adjustment supports 516a and 516b.
- the adjustment supports 516a and 516b are depicted as being an L-shaped device. However, the shape of the adjustment supports 516a and 516b are not intended to be limiting.
- the adjustment supports 516a and 516b may have one or more adjustment bolts, shown here as adjustment bolts 518a and 518b, formed through a wall in the direction of the respective adjustment wedges 514a and 514b.
- the adjustment bolts 518a and 518b may be a threaded rod, such as a threaded rod with a known pitch.
- the filament 190 of the upper lamp module 1 1 OA produces energy or radiation which is used in thermal processing of the substrate 1 14. After a certain number of cycles, the filament 190 may begin to sag as described above with reference to Figure 2.
- the adjustment bolts 518a and 518b can be adjusted to provide a first force against the back wall and against the adjustment supports 516a and 516b. As force is applied from the adjustment bolt 518, the adjustment wedges 514a and 514b will move or slide with relation to the adjustment support 516. The adjustment wedges 514a and 514b will then slide under the lower surface 508 of the base 502.
- each of the adjustment wedges 514a and 514b will cause one or more of the spring-loaded bolts 51 0 and 512 to compress and causing the adjustable bracket 504 to pivot or lift.
- the adjustable bracket 504 pivots about an axis perpendicular to a central axis of the upper lamp module 1 1 OA because the spring of the spring-loaded bolt 512 nearest the adjustment wedges 514a and 514b compresses more than springs of spring-loaded bolts 510 and 512 further from the adjustment wedges 514a and 514b.
- the adjustable bracket 504 pivots, the upper lamp module 1 1 OA and the filament 1 90 will be repositioned in a controlled fashion.
- the adjustable bracket 504 of the upper lamp module 1 1 OA lifts to a second position while maintaining at least one of original orientation parameters (e.g., pitch, roll, yaw or combinations thereof) because the springs of the spring-loaded bolts 510 and 512 compress in a fashion as to maintain one or more of the orientation parameters above.
- the adjustable bracket 504 pivots, the upper lamp module 1 1 OA and the filament 1 90 will be repositioned in a controlled fashion.
- the spring-loaded bolts 510 and 512 provide force in the opposite direction to the force of the adjustment wedges 514a and 514b, such that the adjustable bracket 504 can be repositioned both up and down based on the desires of the user.
- the adjustment wedges 514a and 514b will be calibrated on all sides to ensure that precise tilt of the upper lamp module 1 1 OA is achieved. Combinations of both position and orientation can be changed simultaneously in this implementation, such that the device is shifted in space and oriented at the new position.
- FIG. 6 depicts the upper lamp module 1 1 OA in connection with an adjustable bracket 600, according to another implementation.
- the adjustable bracket 600 includes a base 602 which is connected to the upper lamp module 1 1 OA.
- the base 602 can be composed of materials as descried with reference to the base 202 of Figure 2.
- the base 602 is connected to a first member 604 and a second member 606.
- the first member 604 can have a one or more arms, shown here as a first arm 608 and a second arm 612.
- the first arm 608 is connected with the second member 606 using a spring 610.
- the second arm 612 is connected to the second member 606 using a pivot 614, shown here as a bolt.
- the second member 606 is connected to the chamber 100 by connectors 616. Shown here, the connectors 616 are spring-loaded bolts.
- an adjustment bolt 618 is connected with the first member 604 and is positioned between the first member 604 and the second member 606 with the base of the adjustment bolt 618 resting on a portion of the second member 606.
- the adjustment bolt 618 can be any threaded rod, such as a threaded rod with a known pitch.
- the second member 606 can have a slit 622 to receive an adjustment wedge 624.
- the adjustment wedge 624 has an angled wall, a supporting wall, a front wall, a rear wall and two side walls, shown and described with reference to Figure 4B as angled wall 420, a supporting wall 422, a front wall 424, a back wall 426 and two side walls 428.
- the adjustment wedge 624 can move along a track (not shown), where the track is in connection with the supporting wall to provide precise movement.
- the back walls of adjustment wedge 624 are opposite to an adjustment support 526.
- the adjustment support 626 is depicted as being an L-shaped device. However, the shape of the adjustment support 626 is not intended to be limiting.
- the adjustment support 626 may have one or more adjustment bolts, shown here as adjustment bolt 628, formed through a wall in the direction of the respective adjustment wedge 624.
- the adjustment bolt 628 may be a threaded rod, such as a threaded rod with a known pitch.
- the filament 190 of the upper lamp module 1 1 OA produces energy or radiation which is used in thermal processing of the substrate 1 14. After a certain number of cycles, the filament 190 may begin to sag as described above with reference to Figure 2.
- the adjustment bolt 618 can be adjusted to provide a first force against a wall, such as a portion of the second member 606, and against the first member 604.
- the first member 604 will pivot with relation to the second member 606 at the pivot 614.
- the upper lamp module 1 1 OA and the filament 190 will be repositioned in a controlled fashion.
- the spring 610 provides force in the opposite direction to the force of the adjustment bolt 618, such that the first member 604 can be repositioned both up and down based on the desires of the user.
- the adjustment bolt 628 can be adjusted to provide a second force against the back wall and against the adjustment support 516.
- the adjustment wedge 624 will move or slide with relation to the adjustment support 626.
- the adjustment wedge 624 will then slide under the slit 622.
- the force from the adjustment wedge 624 will cause one or more of the spring-loaded bolts 510 and 512 to tilt, compress or both, causing the first member 604 to pivot or lift.
- an actuator may be used in place of the adjuster 218, the adjustment bolt 618, the spring 210, and/or the spring 610.
- the actuator may be remotely controlled, such that the user does not need to manually adjust the height of the upper lamp modules 1 1 OA.
- the actuator is controlled using a computer configured to perform said operations.
- a single device for providing a controlled directional force is used to apply force for a plurality of the upper lamp modules 1 10A.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201680009716.5A CN107210224A (en) | 2015-02-17 | 2016-01-20 | Equipment for adjustable light source |
KR1020177026088A KR20170118180A (en) | 2015-02-17 | 2016-01-20 | Apparatus for adjustable light sources |
SG11201705062PA SG11201705062PA (en) | 2015-02-17 | 2016-01-20 | Apparatus for adjustable light source |
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US201562116990P | 2015-02-17 | 2015-02-17 | |
US62/116,990 | 2015-02-17 | ||
US14/864,261 US20160111305A1 (en) | 2014-10-21 | 2015-09-24 | Apparatus for adjustable light source |
US14/864,261 | 2015-09-24 |
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WO2016133640A1 true WO2016133640A1 (en) | 2016-08-25 |
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PCT/US2016/014141 WO2016133640A1 (en) | 2015-02-17 | 2016-01-20 | Apparatus for adjustable light source |
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KR (1) | KR20170118180A (en) |
CN (1) | CN107210224A (en) |
SG (1) | SG11201705062PA (en) |
WO (1) | WO2016133640A1 (en) |
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CN110364450B (en) * | 2018-04-11 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor processing equipment and manufacturing method of semiconductor device |
CN111725114B (en) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Position correction device for heating lamp |
Citations (5)
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WO2002093623A2 (en) * | 2001-05-11 | 2002-11-21 | Applied Materials, Inc. | Assembly comprising heat distributing plate and edge support |
CN101829847A (en) * | 2010-05-28 | 2010-09-15 | 北京工业大学 | Light path adjusting bracket of excimer laser micromachining system |
JP2012199512A (en) * | 2011-03-10 | 2012-10-18 | Gigaphoton Inc | Extreme ultraviolet light generation apparatus and extreme ultraviolet light generation method |
US20130323936A1 (en) * | 2012-05-30 | 2013-12-05 | Lawrence Livermore National Security, Llc | Apparatus and methods for rapid thermal processing |
US20140376898A1 (en) * | 2013-06-21 | 2014-12-25 | Applied Materials, Inc. | Absorbing reflector for semiconductor processing chamber |
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US4932620A (en) * | 1989-05-10 | 1990-06-12 | Foy Russell B | Rotating bracket |
US20100075488A1 (en) * | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism |
JP5457710B2 (en) * | 2009-04-23 | 2014-04-02 | 株式会社小糸製作所 | Vehicle lighting |
-
2016
- 2016-01-20 WO PCT/US2016/014141 patent/WO2016133640A1/en active Application Filing
- 2016-01-20 SG SG11201705062PA patent/SG11201705062PA/en unknown
- 2016-01-20 CN CN201680009716.5A patent/CN107210224A/en active Pending
- 2016-01-20 KR KR1020177026088A patent/KR20170118180A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002093623A2 (en) * | 2001-05-11 | 2002-11-21 | Applied Materials, Inc. | Assembly comprising heat distributing plate and edge support |
CN101829847A (en) * | 2010-05-28 | 2010-09-15 | 北京工业大学 | Light path adjusting bracket of excimer laser micromachining system |
JP2012199512A (en) * | 2011-03-10 | 2012-10-18 | Gigaphoton Inc | Extreme ultraviolet light generation apparatus and extreme ultraviolet light generation method |
US20130323936A1 (en) * | 2012-05-30 | 2013-12-05 | Lawrence Livermore National Security, Llc | Apparatus and methods for rapid thermal processing |
US20140376898A1 (en) * | 2013-06-21 | 2014-12-25 | Applied Materials, Inc. | Absorbing reflector for semiconductor processing chamber |
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SG11201705062PA (en) | 2017-09-28 |
KR20170118180A (en) | 2017-10-24 |
CN107210224A (en) | 2017-09-26 |
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