CN101253516B - Integrated circuit die, method for exchanging information, method for promoting usage efficiency - Google Patents
Integrated circuit die, method for exchanging information, method for promoting usage efficiency Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 35
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- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims description 65
- 230000015654 memory Effects 0.000 claims description 30
- 238000005538 encapsulation Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 10
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- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000275 quality assurance Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000013500 data storage Methods 0.000 claims description 2
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- 230000006870 function Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
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- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
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- G06K19/07775—Antenna details the antenna being on-chip
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- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07773—Antenna details
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- H01L2223/54446—Wireless electrical read out
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The present invention discloses an integrated circuit (IC) (100) includes a high capacitance solid state circuit region configured to perform predetermined operations, a RFID block (104) comprising a FeRAM block (910) for storing data, and an interface unit configured to transfer to the RFID block an externally-provided unique ID for wirelessly identifying the IC, the unique ID being stored in the FeRAM block. The IC further includes a conductive trace extending through predetermined regions of the IC, the conductive trace being configured as an antenna for the RFID block, wherein the RFID block is configured to receive and transmit information to an external source via the antenna.
Description
The cross reference of related application
The application requires the U.S. Provisional Application No.60/713 of submission on September 2nd, 2005,828 rights and interests, and its full content is contained in this by reference and is used for all purposes.
Background technology
Produce more cost-effective integrated circuit (IC; Integrated circuit) for example the continuous market pressure of memory IC and CPU etc. needs quick and cost-effective mode; So that systematically manage the IC test and corresponding test result in each stage of manufacture process; For example in the test of wafer stage, quality assurance (QA, quality assurance) and encapsulated phase, and at the inventory information of keeping in each stage.For example, if write down in the information of the test result of wafer stage and can promptly carry out access, then will improve the efficient of follow-up phase to each integrated circuit.Similarly, the efficient of follow-up phase accelerated subsequently in the record of the test result of next stage.Therefore, the operating result and the information in each stage of continuous updating through writing down each interstage can significantly improve overall work efficient.
The ability of in addition, taking out the test result be recorded among each IC and trace information (for example factory location, manufacturing technology, year built, wafer batch, wafer number, position, encapsulation factory, the encapsulated type of IC on wafer) can help assisting the effort of output raising greatly.In addition, semi-conductor chip is fabricated to the product that is worth increase has become recent trend, and this trend will be more remarkable in future.
Therefore, all need high-level efficiency and cost-effective information management in IC manufacturing and production and other each stage.
Summary of the invention
According to embodiments of the invention, a kind of integrated circuit (IC) comprising: high capacitance solid state circuit region, and it is configured to carry out scheduled operation; RFID (RF identification) piece, it comprises FeRAM (ferroelectric ram) piece that is used to store data; And interface unit, it is configured to the peculiar ID with wireless mode identification IC to RFID block transfer outside being used for of providing, and said peculiar ID is stored in the FeRAM piece.This IC also comprises conductive trace, and it extends through the presumptive area of IC, and said conductive trace is configured the antenna as the RFID piece, wherein the RFID piece be configured to via said antenna receive and transmission information to external source.
In one embodiment, high capacitance solid state circuit region comprises one or more among DRAM, flash memory, FeRAM, CPU, SOC(system on a chip) (SoC) and the ASIC.
In another embodiment, conductive trace extends along the periphery of IC.
In another embodiment, the RFID piece comprises simulated block, and it has demodulator circuit, and said demodulator circuit is configured to the RF signal that demodulation receives via antenna, and produces the command signal corresponding to the RF signal that receives.The RFID piece also comprises digital block, and it is configured to receive command signal from demodulator blocka, and produces address and the control signal that is coupled to the FeRAM piece as response.
In another embodiment, the FeRAM piece is configured to from digital block receiver address and command signal, and as response the data that before are stored among the FeRAM is provided, and the data that provided are corresponding to the RF signal that receives via antenna.Simulated block also comprises modulator circuit, and said modulator circuit is configured to modulate the data that the FeRAM piece provides and produces will be via the signal of antenna transmission to external source.
In another embodiment, the FeRAM piece is configured to from digital block receiver address and command signal, and as response the data that before are stored among the FeRAM is provided, and the data that provided are corresponding to the RF signal that receives via antenna.Simulated block also comprises modulator circuit, and said modulator circuit is configured to modulate the data that the FeRAM piece provides and produces will be via the signal of antenna transmission to external source.
In another embodiment, the RFID piece comprises simulated block, and it has demodulator circuit, and said demodulator circuit is configured to the RF signal that demodulation receives via antenna, and produces the command signal corresponding to the RF signal that receives.The RFID piece also comprises digital block, and it is configured to receive command signal from demodulator blocka, and produces address, data and the control signal that is coupled to the FeRAM piece as response.
In another embodiment, the FeRAM piece is configured to from digital block receiver address, data and command signal, and as responding the data storage that receives in the memory location corresponding to the address that receives.
In another embodiment, the RFID piece also comprises voltage-multiplying circuit, and it is the service voltage that is used for the power supply of RFID piece that said voltage-multiplying circuit is configured to the RF conversion of signals that receives via antenna.
In another embodiment, the RFID piece also comprises electrify restoration circuit, and said electrify restoration circuit is configured to detect service voltage, and when service voltage reaches predeterminated level, the RFID piece is powered on.
In another embodiment, the FeRAM piece comprises: control circuit, and it is configured to receive control signal and confirms that control signal is corresponding to read operation or write operation; Memory array, it comprises a plurality of FeRAM unit of arranging along row and column; Demoder, the address signal selection FeRAM unit that it is coupled to memory array and is configured to receive in response to the FeRAM piece; Sensing amplifier, it is coupled to memory array and is configured to that sensing is stored in the data in the selected FeRAM unit in read operation; And the I/O impact damper, its data that are configured in write operation, the FeRAM unit received are sent to memory array, and the data that output senses in read operation.
In another embodiment; FeRAM unit along each row is connected to bit line; Each FeRAM unit comprises transistor and the FeRAM capacitor that is connected in series between bit line and the printed line PL, and the transistorized gate coupled in the FeRAM unit of delegation arrives word line.
In another embodiment, IC also comprises: Built-in Self Test (BIST) piece, and it is configured to when by prompting test I C, carry out the test of IC; And the BIST interface unit, it is coupling between RFID piece and the BIST unit.Said BIST interface unit is configured to the order to the generation of BIST piece provisioning RFID piece, and the test result of BIST operation is sent to the RFID piece.
According to another embodiment of the present invention, a kind of method with wireless mode and IC tube core exchange message is provided, each IC tube core comprises that RFID piece and antenna make it possible to carry out radio communication with the IC tube core.Peculiar identification code is stored in each in the IC tube core.Test each IC tube core, at least a portion of test result is stored in the corresponding IC tube core.Be stored in peculiar identification code in each IC tube core with the RFID piece and the antenna of each IC tube core, make it possible to take out and be stored in the test result in each IC tube core with wireless mode.
In one embodiment, be stored in peculiar identification code in each IC tube core, make and after each IC tube core is packed, can take out test result with wireless mode from each IC tube core with the RFID piece and the antenna of each IC tube core.
In another embodiment, be stored in peculiar identification code in each IC tube core, make and before each IC tube core is packed, can take out test result with wireless mode from each IC tube core with the RFID piece and the antenna of each IC tube core.
In another embodiment, when the IC tube core is on semiconductor wafer, carry out the test of IC tube core, make test result corresponding to wafer sort.
In another embodiment, carry out the test of IC tube core in the packed back of IC tube core, make test result corresponding to packaging and testing.
In another embodiment, use the peculiar identification code of each IC tube core, take out with wireless mode and be stored in the test result in each IC tube core.
In another embodiment, use the peculiar identification code of each IC tube core, test result is stored in the corresponding IC tube core with wireless mode.
In another embodiment, each IC tube core comprises the interface unit that is coupled to the RFID piece, wherein via IC tube core interface unit separately test result is stored in the RFID piece of corresponding IC tube core.
In another embodiment, each IC tube core comprises the interface unit that is coupled to the RFID piece, wherein via interface unit each peculiar identification code is stored in the RFID piece of corresponding IC tube core.
In another embodiment, test result one or more corresponding among wafer sort result, QAT quality assurance test result and the packaging and testing result.
In another embodiment; Trace information is stored in each IC tube core, and said trace information is discerned one or more in the following content: the encapsulation factory that makes position on the wafer of therefrom extracting this IC tube core out of wafer batch under the manufacturing works of IC tube core, the technology that is used to make the IC tube core, the IC tube core, IC tube core, the encapsulated type that holds the IC tube core, encapsulation IC tube core.Be stored in peculiar identification code in each IC tube core with the RFID piece and the antenna of each IC tube core, make it possible to take out and be stored in the trace information in each IC tube core with wireless mode.
According to another embodiment of the present invention, a kind of method of service efficiency of the IC tube core that improves encapsulation is provided, each IC tube core comprises RFID piece and antenna, makes it possible to carry out radio communication with the IC tube core.Before encapsulation IC tube core; Peculiar identification code is stored in each IC tube core; Wherein, Be stored in peculiar identification code in each IC tube core with the RFID piece and the antenna of each IC tube core, can make the defective part of IC tube core of encapsulation invalid with wireless mode, thereby can use all the other funtion parts of the IC tube core of encapsulation.
In another embodiment, use the peculiar identification code of each IC tube core, only make the defective part of IC tube core of encapsulation invalid with wireless mode, thereby can use all the other funtion parts of the IC tube core of encapsulation.
In another embodiment, use the peculiar identification code of each IC tube core, discern the defective part of the IC tube core of encapsulation with wireless mode.
In another embodiment, each IC tube core comprises interface unit coupled to each other and RFID piece, and wherein each peculiar identification code is stored in the RFID piece of corresponding IC tube core via the interface unit of IC tube core.
With reference to the remainder and the accompanying drawing of instructions, can realize further understanding to essence of the present invention disclosed herein and advantage.
Description of drawings
Fig. 1 is the vertical view that has the solid-state semiconductor IC of embedded RFID piece based on FeRAM according to an embodiment of the invention;
Fig. 2 to 7 is that the embedding according to exemplary embodiment of the present invention has the vertical view based on various types of IC of the RFID piece of FeRAM and relevant antenna thereof;
Fig. 8 describes the RFID piece that embeds according to an embodiment of the invention among the IC and the process flow diagram of the information transferring method between the external source;
Fig. 9 is the realization block diagram that the RFID piece that embeds according to an embodiment of the invention among the IC is shown;
Figure 10 A is a block diagram of describing the simplified example structure of the FeRAM piece among Fig. 9;
Figure 10 B is each the table of describing in the signal be coupled to the FeRAM among Figure 10 A of function;
Figure 11 is the realization circuit diagram that the part of the cell array among Figure 10 A is shown;
Figure 12 is the sequential chart of operation that is used for describing the FeRAM cell array of Figure 11; And
Figure 13 is the vertical view of solid-state semiconductor IC according to an embodiment of the invention, and wherein BIST performance and embedded RFID piece based on FeRAM advantageously integrate.
Embodiment
According to embodiments of the invention; Solid-state semiconductor IC comprises high capacitance (capacitance) circuit part; This high capacitance circuit part is configured to carry out one or more functions; The function of for example carrying out by traditional DRAM, flash memory, SRAM, ASIC, FPGA, analog IC, data processor (for example CPU or graphic process unit) and SOC(system on a chip) (SoC, system on chip).Solid-state IC also comprises: the RFID piece; Interface unit, it is configured to the RFID piece wired access is provided; And flush type antenna, it is configured to the RFID piece radio access is provided.The RFID piece is configured to use ferroelectrics (ferroelectric) memory technology (FeRAM) canned data.When directly data being sent to the RFID piece perhaps from RFID block transfer data, use interface unit via the IC pin.The metal level conduct of arranging along the outer regions of IC in one embodiment, is used for the embedded RF antenna of radio communication.
In manufacture process, the RFID piece in each the IC tube core (die) on the wafer can be used to write down various information, the result of the test of for example originally carrying out on one's body at tube core, about the statistics of wafer or the wafer under production information and the specific tube core batch.This helps to improve the efficient of subsequent process.Similarly, the outcome record of the operation that can after wafer stage test (for example in QA or the packaging and testing) be carried out in the RFID piece, thereby further improve the efficient of subsequent process.By this way, each IC carries out record to the result from each stage of manufacture process, and it can easily carry out access, thereby has improved work efficiency greatly.
Fig. 1 is the vertical view that has the solid-state semiconductor IC 100 of embedded RFID piece 104 based on FeRAM according to an embodiment of the invention.Solid-state semiconductor IC 100 can be included in the known circuit of any kind that uses in the various electronic application.IC also comprises the RFID piece 104 with the FeRAM storer that is used to store data.Compare with other memory technology, the FeRAM technology can be integrated with the treatment technology of for example CMOS, bipolarity etc. under the situation that does not increase processing expenditure few.In addition, yet the silicon area of FeRAM consumes least amount provides high FeRAM electric capacity, and consume low power is more suitable in long distance wireless communication.In addition, in the IC of a plurality of IC shown in Fig. 2 to 7 and other type, need the high capacity capacitor to be used for various purposes, for example be used for charge pump circuit, electrical power storage capacitor, mimic channel or the like.With other capacitor commonly used polymkeric substance-insulator-polymkeric substance (PIP for example; Poly-insulator-poly) capacitor and metal-insulator-metal type (MIM; Metal-insulator-metal) capacitor is compared; For identical unit area, the FeRAM capacitor can provide the highest capacitance, and treatment technology is minimum or do not increase complicacy.In another kind of technology, the FeRAM capacitor that preferably will in the analog cmos circuit, use is stacked on the top of analog cmos circuit, does not therefore consume extra silicon area.Therefore, FeRAM is the type of memory that meets cost benefit and practicality most that is used for realizing at the IC of many types the RFID piece.
In Fig. 1, interface unit 106 is as the communication channel between other circuit 102 on RFID piece 104 and the IC.Interface unit 106 can be used for to RFID piece 104 direct external access being provided.Interface unit can be coupled to the external pin of the encapsulation of holding IC 100.This external pin can be exclusively used in the RFID function, and the pin that perhaps is used for access IC circuit 102 alternatively also can be configured to the device as access RFID piece.Metal trace 108 conducts of extending along the periphery of IC and RFID piece 104 carry out the RF antenna of radio communication.The material that is suitable for the RF antenna can be used for replacing metal or combine metal to use.Notice that various positions with line as shown in Figure 1 only are exemplary, are not proportionally.In addition, the position of RFID piece 104 is not limited to the particular corner of IC shown in Figure 1, and can be formed in any part of IC according to the needs of factors such as for example layout and die-size efficient.RFID piece and interface block generally occupy total tube core size of little number percent.
Fig. 2 to 7 is the vertical views that embed according to an embodiment of the invention based on various types of IC of the RFID piece of FeRAM and relevant antenna thereof.These figure only are exemplary.Those skilled in the art can envision the IC of many other types that can embed RFID piece and antenna thereof according to the disclosure.Fig. 2 illustrates and embeds the DRAM IC 200 have based on the RFID piece 204 of FeRAM and relevant antenna 208 thereof.Fig. 3 illustrates and embeds the flash memory IC 300 have based on the RFID piece 304 of FeRAM and relevant antenna 308 thereof.Fig. 4 illustrates and embeds the FeRAM memory IC 400 have based on the RFID piece 404 of FeRAM and relevant antenna 408 thereof.Fig. 5 illustrates and embeds the CPU IC 500 have based on the RFID piece 504 of FeRAM and relevant antenna 508 thereof.Fig. 6 illustrates and embeds SOC(system on a chip) (SoC) IC 600 have based on the RFID piece 604 of FeRAM and relevant antenna 608 thereof.Fig. 7 illustrates and embeds the application-specific integrated circuit (ASIC, application specific IC) 700 have based on the RFID piece 704 of FeRAM and relevant antenna 708 thereof.
Fig. 8 describes the RFID piece that embeds according to an embodiment of the invention among the IC and the process flow diagram of the information transferring method between the external source.After processing wafer, during wafer sort, via the peculiar chip identification code of storage in the RFID piece of each tube core of interface unit on wafer of testing apparatus and each RFID piece.The out of Memory such as position of each tube core on the wafer under the for example tested wafer batch, the wafer also can be stored in the RFID piece via interface unit.Step 804 has been described this step.Note, in each tube core, stored after the peculiar ID sign indicating number, with all communicating by letter and to carry out with wireless mode subsequently of RFID piece.(for example during wafer sort) use cable resource (for example via main circuit among Fig. 1 102 and interface unit 106) maybe be more suitable with RFID piece exchange message even so, in fact in some cases.
In step 806; The relevant information of any follow-up test that stands with each tube core; For example measured speed and power, from the result of temperature test etc., RF performance that can be through the RFID piece is via radio communication or be stored among the FeRAM of RFID piece via wire communication through tester and interface unit.Can at any time use known technology to take out and be stored in the data in the RFID piece with wireless mode.Even the IC of encapsulation leave make the position after, if can obtain carrying out the suitable equipment of radio communication, also can with each IC exchange message.
Fig. 9 is the realization block diagram that the RFID piece 902 among the IC that embeds the IC of Fig. 1 to 7 for example according to an embodiment of the invention is shown.RFID piece 902 among Fig. 9 comprises the digital block 908 that is coupling between simulated block 906 and the FeRAM piece 910.Simulated block 906 comprises the antenna circuit that is coupled to antenna 904, for example is embedded in the metal trace among the IC, is used for data are sent to external reader/write device or receive data from external reader/write device.Voltage multiplier 912 is configured to produce the power vd D of the RFID piece that is used to use transmission frequency.Voltage limiter 916 is configured to limit the amplitude of the transmission voltage of transmission frequency signal.Electrify restoration circuit 918 is configured to produce RESET (resetting) signal through detecting RFID supply voltage VDD.Clock generator 920 is configured to produce the clock signal clk that is coupled to digital block 908.Voltage multiplier the voltage that is configured to increase supply to the FeRAM storer.Detuner 924 is configured to detect the operation command signal from the transmission frequency signal, and modulation circuit 922 is configured to information requested is transferred to antenna.
Figure 10 A is a block diagram of describing the simplified example structure of the FeRAM piece 910 among Fig. 9.The address signal ADD [7:0] that receives from digital block 908 is coupled to word line (WL) demoder 1014 of the delegation unit that is used for selected cell array 1016.Control signal piece 1012 receiving chip enable signal CE, read enable signal RE and WE signal WE.When FeRAM 1010 was carried out access, these signal indication storage access read access or write access.Memory cell array 1016 has 256 unit arranging by 32 row * 8 row.In piece 1018, these eight row are coupled to eight sensing amplifiers (SA, sense amplifier), and the sensing amplifier sensing also amplifies and the corresponding signal in selected unit.These eight row and sensing amplifier are coupled to eight I/O impact dampers, through the I/O impact damper data are sent to and perhaps send out array in the array.Transmit the data that read from FeRAM 1010 via data-signal M_DATA [7:0] and perhaps will be stored in the data the FeRAM1010.Figure 10 B is the table of function that each signal of the FeRAM 1010 among Figure 10 A is coupled in expression.Note, the invention is not restricted to specific memory density or the structure shown in Figure 10 A.Can be greater than or less than 256 memory-size according to design object and application change array and its peripheral circuit with realization.For example, can use have than among Figure 10 A more the unit of multiple row than large memories.This than large memories in, the decoding of traditional row can be used to select the subclass that is listed as.Also can realize many other characteristics of legacy memory as required.
Figure 11 is the realization circuit diagram that the part of the cell array 1016 among Figure 10 A is shown.Cell array 1102 among Figure 11 is used the FeRAM storage unit 1106 of arranging along row and column.Sensing amplifier 1104 is coupling in each BL 1112 and
between 1114, is used for sensing and amplifies the signal of selected data bit.Gate coupled is used to make bit line to equate (equalize) to the transistor 1116,1118,1120 of BLEQ.As shown in the figure, each unit 1106 comprises being coupled in series in and passes through transistor (pass transistor) and FeRAM capacitor between vertically extending bit line and the horizontally extending printed line PL.
Figure 12 is the sequential chart of operation that is used for describing in more detail the FeRAM cell array 1102 of Figure 11.During t0 and t4, via transistor 1116,1118,1120 pairs of bit line BL,
precharge through the BLEQ signal conduction.During t1, t2 and t3, word line WL activates, and during t1 and t2, printed line activates.During t2 and t3, sensing amplifier enable signal SEN activates, and during t0 and t4, BLEQ activates.Finish at t0, during the equalization completion of bit line, begin to go up development at bit line BL,
corresponding to the signal of selected unit.In time period t 1 end, when on bit line BL,
, having developed enough signal difference; Signal SEN enables sensing amplifier, to amplify the signal on BL,
.After data on BL,
are exaggerated and are sent to the I/O impact damper; Restore data 0 during time period t 2, and restore data 1 during time period t 3.Particular array configuration only is exemplary with corresponding sequential chart, rather than restrictive.Can in the RFID of IC piece, realize other FeRAM unit and array configurations; The denomination of invention of for example submitting in 11 days Mays in 2006 of co-assigned is the patented claim the 11/433rd of " Dual-Gate Non-Volatile FerroelectricMemory "; Disclosed bigrid FeRAM unit and corresponding array configurations in No. 753, the full content of this patented claim is contained in this by reference.
Figure 13 is the vertical view of solid-state semiconductor IC according to an embodiment of the invention, and wherein Built-in Self Test (BIST, built-in self-test) performance becomes with embedded RFID agllutination based on FeRAM.BIST enables the self-test of the main circuit in the solid state semiconductor area 1302, helps to reduce testing cost and complicacy.Be with the concrete advantage of the BIST function of embedded RFID combination, can be at any time, even after encapsulation IC, can start the BIST operation with wireless mode.
In operation, can be provided for starting the command signal that BIST operates with 1306 couples of RFID 1304 of interface unit via the RF signal or through solid state semiconductor area 1302.RFID piece 1304 produces the control signal that is used to start the BIST operation subsequently, and via interface unit 1310 these control signals is offered BIST piece 1312.When accomplishing the BIST operation, manufacturer perhaps holds the user to take out some or all test results with wireless mode via RFID piece 1304.In addition, can all or part test result (for example key test result) be stored among the FeRAM of RFID 1304.Notice that the function that IC 1300 carries out is depended in the realization of BIST piece 1312, therefore need BIST piece 1312 be customized to the performed specific function of IC 1300.For example,, can in piece 1312, realize for suitable one in then a plurality of known BIST technology if IC 1300 is flash memory or DRAM or CPU, and with zone 1302 in main circuit interface suitably.
Therefore, according to the present invention, will be embedded among the various types of IC that use in the electronic equipments such as computing machine, hand-held device, vehicle, apparatus for example based on the RFID of FeRAM and its RF antenna.RFID among the embedding IC can be used for being included in the various purposes of aforesaid manufacture process.In one embodiment, the peculiar identification code that is stored among the RFID of each IC is used to follow the tracks of each IC, so that for example carry out inventory assessment or carry out the IC dispensing in home-delivery center.Through placing reader, can follow the tracks of flowing of IC in home-delivery center.In addition, for example the electronics manufacturer of PC mainboard or computer maker can be placed reader on each PC mainboard or in the shell of electronic equipment, and feasible RFID with each IC communicates.
In another embodiment, the RFID characteristic is configured to significantly improve the service efficiency of each IC.For example; In the memory IC of for example dram chip; When chip breaks down, the fabricator or even the end user can use the RFID characteristic on the IC, with for example through using the BIST characteristic to identify the fault position; And make the partial invalidity that the fault position belongs in the array, thereby allow the remainder of DRAM to be used for storing.In another embodiment, the RFID characteristic is configured to store the information about part reliability, thereby allows the substance of quality control is improved.Have more not that the IC of robust property can carry out mark in RFID piece separately, the user can take out this information and not use this IC as not being expected for durable product (for example disposable camera) subsequently.
According to another embodiment, the RFID that embeds among the IC is configured to provide the accessibility in the scene.For example, when the on-the-spot IC of user broke down, the RFID characteristic can be used to identify fault IC and the information that sends manufacturer to.Then, manufacturer can advance the information on the specific IC, and uses this information to improve output etc.In another embodiment, the RFID that embeds among each IC is configured to be used for preventing that with label dress ornament from being stolen identical mode and preventing that IC from being stolen from the boutique.In other embodiments, preferably that the RFID characteristic among BIST function and the IC is integrated, so that even after the IC of encapsulation leaves the scene of manufacturing, still can test to IC.
Though the detailed description to various embodiment of the present invention more than is provided, can have carried out manyly substituting, being out of shape and be equal to.Therefore, because these and other reason, not will be understood that above-mentioned explanation is the restriction of scope of the present invention that claim is limited.
Claims (31)
1. integrated circuit lead comprises:
High capacitance solid state circuit region, it is configured to carry out scheduled operation;
The RF identification piece, it comprises the ferroelectric ram piece that is used to store data;
Interface unit; It is configured to be used for the peculiar ID with wireless mode recognition integrated circuit tube core to what RF identification block transfer outside provided; Said peculiar ID is stored in the ferroelectric ram piece, and said interface unit also is configured to realize communicating by letter between said RF identification piece and the said high capacitance solid state circuit region; And
Conductive trace, it extends through the presumptive area of integrated circuit lead, said conductive trace is configured the antenna as the RF identification piece, wherein the RF identification piece be configured to via said antenna receive and transmission information to external source.
2. integrated circuit lead according to claim 1, wherein high capacitance solid state circuit region comprises one or more in dynamic RAM, flash memory, ferroelectric ram, CPU, SOC(system on a chip) and the special IC.
3. integrated circuit lead according to claim 1, wherein conductive trace extends along the periphery of integrated circuit lead.
4. integrated circuit lead according to claim 1, wherein the RF identification piece comprises:
Simulated block, it has demodulator circuit, and said demodulator circuit is configured to the RF signal that demodulation receives via antenna, and produces the command signal corresponding to the RF signal that receives; And
Digital block, it is configured to receive command signal from demodulator blocka, and produces address and the control signal that is coupled to the ferroelectric ram piece as response.
5. integrated circuit lead according to claim 4, wherein:
The ferroelectric ram piece is configured to from digital block receiver address and control signal, and as response the data that before are stored in the ferroelectric ram is provided, and the data that provided are corresponding to the RF signal that receives via antenna; And
Simulated block also comprises modulator circuit, and said modulator circuit is configured to modulate the data that the ferroelectric ram piece provides and produces will be via the signal of antenna transmission to external source.
6. integrated circuit lead according to claim 1, wherein the RF identification piece comprises:
Simulated block, it has demodulator circuit, and said demodulator circuit is configured to the RF signal that demodulation receives via antenna, and produces the command signal corresponding to the RF signal that receives; And
Digital block, it is configured to receive command signal from demodulator blocka, and produces address, data and the control signal that is coupled to the ferroelectric ram piece as response.
7. integrated circuit lead according to claim 6; Wherein the ferroelectric ram piece is configured to from digital block receiver address, data and control signal, and as responding the data storage that receives in the memory location corresponding to the address that receives.
8. integrated circuit lead according to claim 1, wherein the RF identification piece also comprises voltage-multiplying circuit, it is the service voltage that is used for the power supply of radio frequency identification block that said voltage-multiplying circuit is configured to the RF conversion of signals that receives via antenna.
9. integrated circuit lead according to claim 8, wherein the RF identification piece also comprises electrify restoration circuit, said electrify restoration circuit is configured to detect service voltage, and when service voltage reaches predeterminated level, the radio frequency identification block is powered on.
10. integrated circuit lead according to claim 1, wherein the ferroelectric ram piece comprises:
Control circuit, it is configured to receive control signal and confirms that control signal is corresponding to read operation or write operation;
Memory array, it comprises a plurality of ferroelectric rams unit of arranging along row and column;
Demoder, the address signal selection ferroelectric ram unit that it is coupled to memory array and is configured to receive in response to the ferroelectric ram piece;
Sensing amplifier, it is coupled to memory array and is configured to that sensing is stored in the data in the selected ferroelectric ram unit in read operation; And
The I/O impact damper, its data that are configured in write operation, the ferroelectric ram piece received are sent to memory array, and the data that output senses in read operation.
11. integrated circuit lead according to claim 10; Wherein the ferroelectric ram unit along each row is connected to bit line; Each ferroelectric ram unit comprises transistor and the ferroelectric ram capacitor that is connected in series between bit line and the printed line PL, and the transistorized gate coupled in the ferroelectric ram unit of delegation arrives word line.
12. integrated circuit lead according to claim 1 also comprises:
The Built-In Self Test test block, it is configured to when by prompting testing integrated circuits tube core, carry out the test of integrated circuit lead; And
The Built-in Self Test interface unit; It is coupling between RF identification piece and the Built-In Self Test test block; Said Built-in Self Test interface unit is configured to supply with the order that the RF identification piece produces to the Built-in Self Test piece, and the test result of Built-in Self Test operation is sent to the RF identification piece.
13. integrated circuit lead according to claim 1 also comprises a plurality of pins, said interface unit also is configured to help the data transmission between one or more in said RF identification piece and the said a plurality of pin.
14. integrated circuit lead according to claim 1, wherein said integrated circuit lead are the tube cores that is accommodated in the encapsulation.
15. integrated circuit lead according to claim 1, wherein said integrated circuit lead is one of a plurality of tube cores on the wafer.
16. the method with wireless mode and integrated circuit lead exchange message, each integrated circuit lead comprise that RF identification piece and antenna make it possible to carry out radio communication with integrated circuit lead, said method comprises:
Peculiar identification code is stored in each in the integrated circuit lead;
Test each integrated circuit lead; And
At least a portion of the test result of testing procedure is stored in the corresponding integrated circuit lead,
Wherein be stored in peculiar identification code in each integrated circuit lead with the RF identification piece and the antenna of each integrated circuit lead, make it possible to take out and be stored in the test result in each integrated circuit lead with wireless mode.
17. method according to claim 16; Wherein be stored in peculiar identification code in each integrated circuit lead with the RF identification piece and the antenna of each integrated circuit lead, make and after each integrated circuit lead is packed, can take out test result with wireless mode from each integrated circuit lead.
18. method according to claim 16 is wherein carried out testing procedure when integrated circuit lead is on semiconductor wafer, make test result corresponding to wafer sort.
19. method according to claim 16 is wherein carried out testing procedure in the packed back of integrated circuit lead, makes test result corresponding to packaging and testing.
20. method according to claim 16 also comprises:
Use the peculiar identification code of each integrated circuit lead, take out with wireless mode and be stored in the test result in each integrated circuit lead.
21. method according to claim 16, wherein the step of store test results comprises:
Use the peculiar identification code of each integrated circuit lead, test result is stored in the corresponding integrated circuit lead with wireless mode.
22. method according to claim 16; Wherein each integrated circuit lead comprises the interface unit that is coupled to the RF identification piece, wherein via integrated circuit lead interface unit separately test result is stored in the RF identification piece of corresponding integrated circuit tube core.
23. method according to claim 16, wherein each integrated circuit lead comprises the interface unit that is coupled to the RF identification piece, wherein via interface unit each peculiar identification code is stored in the RF identification piece of corresponding integrated circuit tube core.
24. method according to claim 16, wherein test result one or more corresponding among wafer sort result, QAT quality assurance test result and the packaging and testing result.
25. method according to claim 16 also comprises:
Trace information is stored in each integrated circuit lead; Said trace information is discerned one or more in the following content: the encapsulation factory that makes position on the wafer of therefrom extracting this integrated circuit lead out of wafer batch under the manufacturing works of integrated circuit lead, the technology that is used to make integrated circuit lead, the integrated circuit lead, integrated circuit lead, the encapsulated type that holds integrated circuit lead, encapsulated integrated circuit tube core
Wherein be stored in peculiar identification code in each integrated circuit lead with the RF identification piece and the antenna of each integrated circuit lead, make it possible to take out and be stored in the trace information in each integrated circuit lead with wireless mode.
26. method according to claim 16, wherein each integrated circuit lead comprises: one or more in dynamic RAM, flash memory, ferroelectric ram, CPU, SOC(system on a chip) and the special IC.
27. a method that improves the service efficiency of packaged integrated circuits tube core, each integrated circuit lead comprises RF identification piece and antenna, makes it possible to carry out radio communication with integrated circuit lead, and said method comprises:
Before the encapsulated integrated circuit tube core; Peculiar identification code is stored in each integrated circuit lead; Wherein, Be stored in peculiar identification code in each integrated circuit lead with the RF identification piece and the antenna of each integrated circuit lead, can make the defective part of packaged integrated circuits tube core invalid with wireless mode, thereby can use all the other funtion parts of packaged integrated circuits tube core.
28. method according to claim 27 also comprises:
Use the peculiar identification code of each integrated circuit lead, only make the defective part of packaged integrated circuits tube core invalid, thereby can use all the other funtion parts of packaged integrated circuits tube core with wireless mode.
29. method according to claim 27 also comprises:
Use the peculiar identification code of each integrated circuit lead, with the defective part of wireless mode identification packaged integrated circuits tube core.
30. method according to claim 27; Wherein each integrated circuit lead comprises interface unit coupled to each other and RF identification piece, and wherein each peculiar identification code is stored in the RF identification piece of corresponding integrated circuit tube core via the interface unit of integrated circuit lead.
31. method according to claim 27, wherein each integrated circuit lead comprises one or more in dynamic RAM, flash memory, ferroelectric ram, CPU, SOC(system on a chip) and the special IC.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71382805P | 2005-09-02 | 2005-09-02 | |
US60/713,828 | 2005-09-02 | ||
PCT/US2006/034474 WO2007028150A2 (en) | 2005-09-02 | 2006-08-31 | Integrated circuit with embedded feram-based rfid |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101253516A CN101253516A (en) | 2008-08-27 |
CN101253516B true CN101253516B (en) | 2012-09-05 |
Family
ID=37809655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2006800317725A Active CN101253516B (en) | 2005-09-02 | 2006-08-31 | Integrated circuit die, method for exchanging information, method for promoting usage efficiency |
Country Status (7)
Country | Link |
---|---|
US (3) | US7883019B2 (en) |
JP (1) | JP2009507382A (en) |
KR (1) | KR100991158B1 (en) |
CN (1) | CN101253516B (en) |
DE (1) | DE112006002341T5 (en) |
TW (1) | TWI321756B (en) |
WO (1) | WO2007028150A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
DE112006002341T5 (en) | 2008-06-05 |
KR100991158B1 (en) | 2010-11-02 |
TWI321756B (en) | 2010-03-11 |
JP2009507382A (en) | 2009-02-19 |
KR20080034016A (en) | 2008-04-17 |
US8322626B2 (en) | 2012-12-04 |
US20110174886A1 (en) | 2011-07-21 |
WO2007028150A3 (en) | 2007-08-16 |
US7883019B2 (en) | 2011-02-08 |
CN101253516A (en) | 2008-08-27 |
WO2007028150A2 (en) | 2007-03-08 |
US20070170267A1 (en) | 2007-07-26 |
TW200729042A (en) | 2007-08-01 |
US20110114736A1 (en) | 2011-05-19 |
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