CN101245470A - 一种制备纳米尺度间隙金属电极对的方法 - Google Patents
一种制备纳米尺度间隙金属电极对的方法 Download PDFInfo
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- CN101245470A CN101245470A CNA200810102118XA CN200810102118A CN101245470A CN 101245470 A CN101245470 A CN 101245470A CN A200810102118X A CNA200810102118X A CN A200810102118XA CN 200810102118 A CN200810102118 A CN 200810102118A CN 101245470 A CN101245470 A CN 101245470A
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- metal
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 92
- 239000002184 metal Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000003792 electrolyte Substances 0.000 claims abstract description 19
- 239000007772 electrode material Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000000694 effects Effects 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 101710134784 Agnoprotein Proteins 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000008151 electrolyte solution Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
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CN200810102118XA CN101245470B (zh) | 2008-03-18 | 2008-03-18 | 一种制备纳米尺度间隙金属电极对的方法 |
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CN200810102118XA CN101245470B (zh) | 2008-03-18 | 2008-03-18 | 一种制备纳米尺度间隙金属电极对的方法 |
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CN101245470A true CN101245470A (zh) | 2008-08-20 |
CN101245470B CN101245470B (zh) | 2011-01-19 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489754A (zh) * | 2013-09-29 | 2014-01-01 | 中国科学院微电子研究所 | 一种小尺寸银纳米颗粒的制备方法 |
CN104897041A (zh) * | 2015-04-26 | 2015-09-09 | 渤海大学 | Pwm主动控制型磁悬浮机构气隙长度的测量系统及方法 |
CN105474398A (zh) * | 2013-09-06 | 2016-04-06 | 国立研究开发法人科学技术振兴机构 | 电极对、其制作方法、器件用基板以及器件 |
CN111893527A (zh) * | 2020-08-04 | 2020-11-06 | 淮南师范学院 | 纳米电极对及其制备方法 |
-
2008
- 2008-03-18 CN CN200810102118XA patent/CN101245470B/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105474398A (zh) * | 2013-09-06 | 2016-04-06 | 国立研究开发法人科学技术振兴机构 | 电极对、其制作方法、器件用基板以及器件 |
CN105474398B (zh) * | 2013-09-06 | 2018-11-13 | 国立研究开发法人科学技术振兴机构 | 电极对、其制作方法、器件用基板以及器件 |
CN103489754A (zh) * | 2013-09-29 | 2014-01-01 | 中国科学院微电子研究所 | 一种小尺寸银纳米颗粒的制备方法 |
CN103489754B (zh) * | 2013-09-29 | 2016-07-27 | 中国科学院微电子研究所 | 一种小尺寸银纳米颗粒的制备方法 |
CN104897041A (zh) * | 2015-04-26 | 2015-09-09 | 渤海大学 | Pwm主动控制型磁悬浮机构气隙长度的测量系统及方法 |
CN104897041B (zh) * | 2015-04-26 | 2017-11-10 | 渤海大学 | Pwm主动控制型磁悬浮机构气隙长度的测量系统及方法 |
CN111893527A (zh) * | 2020-08-04 | 2020-11-06 | 淮南师范学院 | 纳米电极对及其制备方法 |
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CN101245470B (zh) | 2011-01-19 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: PEKING UNIVERSITY Effective date: 20120801 Owner name: PEKING UNIVERSITY Effective date: 20120801 |
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Effective date of registration: 20120801 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Peking University Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |