CN101245470B - 一种制备纳米尺度间隙金属电极对的方法 - Google Patents
一种制备纳米尺度间隙金属电极对的方法 Download PDFInfo
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- CN101245470B CN101245470B CN200810102118XA CN200810102118A CN101245470B CN 101245470 B CN101245470 B CN 101245470B CN 200810102118X A CN200810102118X A CN 200810102118XA CN 200810102118 A CN200810102118 A CN 200810102118A CN 101245470 B CN101245470 B CN 101245470B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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CN200810102118XA CN101245470B (zh) | 2008-03-18 | 2008-03-18 | 一种制备纳米尺度间隙金属电极对的方法 |
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CN101245470B true CN101245470B (zh) | 2011-01-19 |
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KR102150053B1 (ko) * | 2013-09-06 | 2020-08-31 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | 전극쌍, 그 제작 방법, 디바이스용 기판 및 디바이스 |
CN103489754B (zh) * | 2013-09-29 | 2016-07-27 | 中国科学院微电子研究所 | 一种小尺寸银纳米颗粒的制备方法 |
CN104897041B (zh) * | 2015-04-26 | 2017-11-10 | 渤海大学 | Pwm主动控制型磁悬浮机构气隙长度的测量系统及方法 |
CN111893527A (zh) * | 2020-08-04 | 2020-11-06 | 淮南师范学院 | 纳米电极对及其制备方法 |
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Effective date of registration: 20120801 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Peking University Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |