CN101241870A - Device for measuring the wafer film thickness - Google Patents
Device for measuring the wafer film thickness Download PDFInfo
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- CN101241870A CN101241870A CNA2007100371529A CN200710037152A CN101241870A CN 101241870 A CN101241870 A CN 101241870A CN A2007100371529 A CNA2007100371529 A CN A2007100371529A CN 200710037152 A CN200710037152 A CN 200710037152A CN 101241870 A CN101241870 A CN 101241870A
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- filter
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- optical element
- film thickness
- light source
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Abstract
The invention provides a device for measuring the wafer film thickness. The invention comprises a light sourve, an optical element and an analyzing device. The light source emits light ray and irradiate on the wafer through the optical element; wherein, the device comprises a filter and a box. The filter, light source and the optical element are located in the box. The filter is used to filter the sour gas and the alkali gas. Compared with the prior technology, the invention is additionally provided with a filter and the filter, light source and the optical element are located in the box. The filter can fiter off the polluted gas in the box, which effectively avoids the optical element from pollution, and prevents the intensity of the incident light from change due tothe pollution of the sour gas and the alkali gas, which decreases the precision of the analysis.
Description
Technical field
The present invention relates to a kind of measuring equipment, specifically, relate to the device that measures wafer film thickness
Background technology
In manufacture of semiconductor, the device that measures wafer upper film thickness generally includes light source provides incident light, and incident light shines the surface of wafer by optical element, in the surface reflection of wafer.Also be provided with an analytical equipment in the measuring equipment, preserve the light intensity of incident light in this analytical equipment, and can gather reverberation, the light intensity of more catoptrical then light intensity and incident light, thereby the thickness of judgement wafer upper film from crystal column surface.
This shows, the light intensity of incident light is a judgment standard, yet, in the actual use, optical element probably is subjected to the pollution of some acidity or alkaline gas in long-term use, the incident light light intensity will be variant with original incident light light intensity of estimating by the optical element that is polluted, thereby cause the inaccuracy of measurement.
Summary of the invention
The object of the present invention is to provide a kind of device of improved measurement wafer film thickness, it can more accurately measure the film thickness of crystal column surface.
For achieving the above object, the invention provides a kind of device that measures wafer film thickness, this device comprises light source, and optical element and analytical equipment, light source emit beam and be radiated on the wafer by optical element; Wherein, this device also comprises filter and a box, and this filter, light source and optical element place in the described box, and filter is used to filter acid gas and the alkali gas in the box.
Described box also is provided with a breach, and the light that light source sends shines on the wafer by this breach then by optical element, and this breach passes through light uninterruptedly.
The air outlet of described filter is connected with the box outside, and air inlet is located at cassette interior.
The filtering material of described filter mainly is active carbon and polymerizable compound.
Box is that irony and other are difficult for by the material of acid gas and alkali gas corrosion.
Compared with prior art, device of the present invention additionally is provided with a filter, also with filter, light source and optical element place in the box, filter can all be filled into the box outside with the dusty gas in the box, effectively avoided optical element to be polluted, the light intensity that prevents incident light is owing to the variation that can not estimate takes place in the pollution of acid gas and alkali gas, thereby causes the final analysis result precision of analytical equipment to descend.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 measures the work schematic diagram of the device of wafer film thickness for the present invention.
Embodiment
The device that the present invention measures wafer film thickness can measure the thickness of crystal column surface film.
See also Fig. 1, wafer 9 is placed in this device and measures.This device comprises light source 1, optical element 3, filter 5, analytical equipment 7 and box 10.Wherein, light source 1, optical element 3 and filter 5 are concentrated and are inserted in the box 10.Box 10 is provided with a breach, is used to guarantee that the light by optical element 3 can be mapped to wafer 9 uninterruptedly.The air outlet of filter 5 is connected with box 10 outsides, and air inlet is located at box 10 inside, and it can filter box 10 interior gases and discharge box 10 outsides.
In embodiments of the present invention, box 10 can be irony or other are difficult for by the material of acid gas or alkali gas corrosion.Analytical equipment 7 can be preserved the light intensity of incident light in advance.
In the measurement process, light source 1 produces incident light, and incident light shines wafer 9 surfaces by the effect of optical element 3, and this light directly reflexes to analytical equipment 7 on the surface of wafer 9.Analytical equipment 7 collects its light intensity of reverberation post analysis, and the light intensity of catoptrical light intensity with the incident light of preserving in advance compared, and calculates the thickness of wafer 9 surperficial upper films according to intensity variations.
In actual use, the filtering material of filter 5 mainly is active carbon and polymerizable compound.These materials can be filtered acid gas and alkali gas, so filter 5 can effectively filter some acid gas and alkali gas in the box 10, thereby the light intensity that prevents incident light is owing to the variation that can not estimate takes place in the pollution of acid gas and alkali gas, and then has influence on the precision of analytical equipment 7 analysis results.
Claims (5)
1. device that measures wafer film thickness, this device comprises light source, optical element and analytical equipment, light source emit beam and are radiated on the wafer by optical element; It is characterized in that: this device also comprises filter and a box, and this filter, light source and optical element place in the described box, and filter is used to filter acid gas and the alkali gas in the box.
2. the device of measurement wafer film thickness as claimed in claim 1, it is characterized in that: described box also is provided with a breach, the light that light source sends shines on the wafer by this breach then by optical element, and this breach passes through light uninterruptedly.
3. the device of measurement wafer film thickness as claimed in claim 1 is characterized in that: the air outlet of described filter is connected with the box outside, and air inlet is located at cassette interior.
4. the device of measurement wafer film thickness as claimed in claim 1 is characterized in that: the filtering material of described filter mainly is active carbon and polymerizable compound.
5. the device of measurement wafer film thickness as claimed in claim 1 is characterized in that: box is that irony and other are difficult for by the material of acid gas and alkali gas corrosion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100371529A CN100547755C (en) | 2007-02-06 | 2007-02-06 | Measure the device of wafer film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100371529A CN100547755C (en) | 2007-02-06 | 2007-02-06 | Measure the device of wafer film thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101241870A true CN101241870A (en) | 2008-08-13 |
| CN100547755C CN100547755C (en) | 2009-10-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100371529A Expired - Fee Related CN100547755C (en) | 2007-02-06 | 2007-02-06 | Measure the device of wafer film thickness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100547755C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876528A (en) * | 2010-07-02 | 2010-11-03 | 天津大学 | Electromagnetic sensor-based metal film thickness measuring device and method |
| CN103017670A (en) * | 2012-12-13 | 2013-04-03 | 北京航空航天大学 | Glass coating film quality detecting system based on frustrated total reflection |
| WO2013170726A1 (en) * | 2012-05-15 | 2013-11-21 | 无锡华润上华科技有限公司 | Film thickness measuring instrument |
| CN103765157A (en) * | 2011-07-04 | 2014-04-30 | 科磊股份有限公司 | Atmospheric molecular contamination control with local purging |
| CN108572368A (en) * | 2017-03-07 | 2018-09-25 | 台濠科技股份有限公司 | The method for measuring wafer thickness with infrared ray |
| CN112535911A (en) * | 2020-08-28 | 2021-03-23 | 深圳中科飞测科技股份有限公司 | Optical device and method for operating the same |
-
2007
- 2007-02-06 CN CNB2007100371529A patent/CN100547755C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876528A (en) * | 2010-07-02 | 2010-11-03 | 天津大学 | Electromagnetic sensor-based metal film thickness measuring device and method |
| CN103765157A (en) * | 2011-07-04 | 2014-04-30 | 科磊股份有限公司 | Atmospheric molecular contamination control with local purging |
| WO2013170726A1 (en) * | 2012-05-15 | 2013-11-21 | 无锡华润上华科技有限公司 | Film thickness measuring instrument |
| CN103424078A (en) * | 2012-05-15 | 2013-12-04 | 无锡华润上华科技有限公司 | Film thickness gauge |
| CN103424078B (en) * | 2012-05-15 | 2016-03-23 | 无锡华润上华科技有限公司 | Film thickness gauge |
| CN103017670A (en) * | 2012-12-13 | 2013-04-03 | 北京航空航天大学 | Glass coating film quality detecting system based on frustrated total reflection |
| CN103017670B (en) * | 2012-12-13 | 2016-02-17 | 北京航空航天大学 | A kind of coating film on glass quality detecting system based on frustrated total reflection |
| CN108572368A (en) * | 2017-03-07 | 2018-09-25 | 台濠科技股份有限公司 | The method for measuring wafer thickness with infrared ray |
| CN112535911A (en) * | 2020-08-28 | 2021-03-23 | 深圳中科飞测科技股份有限公司 | Optical device and method for operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100547755C (en) | 2009-10-07 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20111117 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20190206 |
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| CF01 | Termination of patent right due to non-payment of annual fee |