CN108572368A - The method for measuring wafer thickness with infrared ray - Google Patents
The method for measuring wafer thickness with infrared ray Download PDFInfo
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- CN108572368A CN108572368A CN201710130281.6A CN201710130281A CN108572368A CN 108572368 A CN108572368 A CN 108572368A CN 201710130281 A CN201710130281 A CN 201710130281A CN 108572368 A CN108572368 A CN 108572368A
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- Prior art keywords
- wafer
- infrared ray
- thickness
- distance
- metal surface
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
Abstract
A method of measuring wafer thickness with infrared ray, there are metal surface and original surface above and below wafer and sets a gauge head respectively, an and virtual datum plane, infrared ray is emitted by the transmitter of two gauge heads, and the infrared ray of reflection is received by corresponding receiver, it is computed and to obtain farthest distance between datum plane be distance nearest between one first distance and datum plane is a second distance.The difference of metal surface that the thickness of hyaline layer is bonded by its inner surface or original surface and its outer surface distance between datum plane respectively is obtained, with the first distance subtracts second distance and obtains the overall thickness that wafer includes hyaline layer, again with the thickness that overall thickness subtracts the thickness of hyaline layer and obtains wafer itself, the present invention is thereby constituted.
Description
Technical field
The present invention is in relation to a kind of technology measuring wafer thickness, espespecially a kind of side measuring wafer thickness with infrared ray
Method.
Background technology
According to No. 426574 patent of invention cases of TaiWan, China patent announcement I, exposure has band of light through measurement head (13) edge
Arrow direction (A) is irradiated to the semiconductor crystal wafer (4) in rotary fixing device (6), reflected radiation in a non contact fashion
(16) then (B) is delivered to spectrometer (17) in the direction of the arrow, to measure the thickness of wafer after analysis.It is again special according to TaiWan, China
No. 393576 patent of invention case of sharp notification number, the concept of the infrared reflection in 2 layers of epitaxy wafer as shown in its Figure 16 (I)
Definition graph, equally measuring the thickness of wafer.However, if the surface of the wafer of aforementioned two Patent Case is formed in epitaxy process
Metal surface since to metal, there is no good penetrability, therefore is only capable of measuring metal surface or more for infrared ray
Skin depth can not measure metal surface film thickness below.
Again according to TaiWan, China patent announcement number M502953 utility model patent cases, disclose two electric wave range finders (41,
42) above and below wafer (10), back wave will be received irradiation electric wave by two electric wave range finders (41,42) respectively,
Using the relationship between emitting radio waves and back wave, can learn two electric wave range finders (41,42) with above wafer (10) and under
The distance of side.By the distance between two electric wave range finders (41,42) subtract by above-mentioned two measured back waves distance i.e.
Obtain the thickness of wafer.According to practical experience it is found that described however, though this measuring device can measure the correct thickness of wafer
Thickness should be overall thickness, if wafer includes other layer of structure, such as when adhesive tape layer or surface coating layer, then it can not be from the practicality
New patent case knows how accurately to measure the thickness of wafer itself.
Therefore, above-mentioned known measurement wafer thickness how is solved the problems, such as, as where emphasis of the invention.
Invention content
The main object of the present invention is to solve the problem above-mentioned and provides and a kind of measuring wafer thickness with infrared ray
Method, in addition to can by calculating obtain wafer include hyaline layer overall thickness other than, and can get wafer itself thickness, tool
There are the accuracy and convenience for measuring wafer thickness.
Aforementioned wafer has with horizontally disposed once the original that the metal surface that epitaxy obtains and one are wafer material itself
Surface, the metal surface and the original surface one are the upper surface of wafer and the lower surface that another one is the wafer, the metal watch
At least one of face and the original surface have hyaline layer, the hyaline layer to have one and the interior table of the metal surface or original surface fitting
Face, and have one back to the outer surface of the inner surface.To reach purpose above-mentioned, method of the invention includes the following steps：
Gauge head is set：There are two gauge heads to be respectively provided above and below the wafer, which respectively has one group of corresponding hair
The transmitter of emitter and receiver, two gauge head can emit infrared ray to the metal surface of the wafer and original surface respectively, and
The infrared ray of reflection is received by corresponding receiver；
Datum plane is set：After two gauge head setting positioning, by virtual one of two gauge head itself on the wafer or under
Datum plane；
It measures：Wherein the transmitter of a gauge head emits infrared ray to the metal surface, and is received by corresponding receiver
The infrared ray of metal surface reflection；The transmitter of another gauge head emits infrared ray to the original surface and penetrates the wafer extremely
The metal surface, and the infrared ray reflected from the metal surface and the original surface is received by corresponding receiver respectively；It is aforementioned
Infrared ray penetrates when meeting the hyaline layer, and in the metal surface that the inner surface of the hyaline layer is bonded or the original table
Face and its outer surface all have the infrared ray of reflection to be received by corresponding receiver；
It calculates：There are a computing unit and two gauge head to be electrically connected, the metal surface of the wafer and original surface and described
In the outer surface of hyaline layer, according to the infrared ray that aforementioned each receiver is received, it is computed and obtains between the datum plane most
Remote distance is that distance nearest between one first distance and the datum plane is a second distance, wherein if the metal surface
Distance between the datum plane, be by the aforementioned infrared ray for penetrating the original surface the metal surface reflection measured by；Institute
It states the metal surface or the original surface that the thickness of hyaline layer is bonded by its inner surface and its outer surface is put down with the benchmark respectively
The difference of distance between face is obtained, with first distance subtracts the second distance and obtains the wafer and includes an at least hyaline layer
Overall thickness, then at least thickness of a hyaline layer and the thickness itself that obtain the wafer is subtracted with the overall thickness.
Wherein, an at least hyaline layer has an adhesive tape layer in the metal surface or the original surface for below the wafer.
Wherein, an at least hyaline layer, it is the wafer in the metal surface or the original surface separately to have a protective layer
Top.
Wherein, the wavelength for the infrared ray that respectively transmitter of the gauge head is emitted is 1300nm.
Wherein, the measuring range of the overall thickness is in 50um to 4000um.
The beneficial effects of the present invention are：
A kind of method measuring wafer thickness with infrared ray is provided, includes transparent in addition to wafer can be obtained by calculating
Except the overall thickness of layer, and the thickness of wafer itself is can get, there is the accuracy and convenience for measuring wafer thickness.
The above-mentioned and other purposes and advantage of the present invention, the detailed description and accompanying drawings being not difficult from following selected embodiments
In, it gains in-depth understanding.
Description of the drawings
Fig. 1 is the step flow chart of the method for the present invention.
Fig. 2 is the preferred embodiment of the present invention when the original surface of wafer has adhesive tape layer and two gauge heads measure thickness
State diagram.
Fig. 3 is two gauge heads of the present invention and the block diagram that computing unit is electrically connected.
Fig. 4 is another preferred embodiment of the present invention has adhesive tape layer and protection respectively in the original surface of wafer and metal surface
Layer and two gauge heads measure state diagram when thickness.
Specific implementation mode
It please refers to Fig.1 to Fig.4, the example structure as shown in the figure for selected by the present invention, this is only for purposes of discussion, special
It is not limited by such structure in profit application.
The present invention provides a kind of method 1 measuring wafer thickness with infrared ray, as shown in Fig. 2, including setting gauge head
11, the step of datum plane setting 12, measurement 13 and calculating 14, wherein：
As shown in figure 3, the wafer 2 has the metal surface 21 and one obtained once epitaxy for wafer with horizontally disposed
The original surface 22 of 2 material itself, herein with the upper surface that metal surface 21 is wafer 2, and original surface 22 is the following table of wafer 2
Face, and at least one of metal surface 21 and original surface 22 have a hyaline layer, the hyaline layer have one and metal surface 21 or former table
The inner surface that face 22 is bonded, and have one back to the outer surface of the inner surface.
Gauge head 11 is set：As shown in Fig. 2, there is two gauge heads 3 to be respectively provided above and below wafer 2, two gauge heads 3 respectively have one
The corresponding transmitter 31 of group and receiver 32, the transmitter 31 of two gauge heads 3 can be respectively to the metal surface 21 of wafer 2 and original surface
22 transmitting infrared rays, and the infrared ray reflected is received by corresponding receiver 32.
Datum plane setting 12：As shown in Figures 2 and 4, after two gauge heads 3 setting positioning, by virtual one of two gauge heads 3 itself
In the datum plane R of 2 up or down of wafer.
Measure 13：As shown in Fig. 2 and Fig. 4 figures, in the present embodiment, the transmitter 31 of the gauge head 3 above wafer 2 is to gold
Metal surface 21 emits infrared ray, and receives the infrared ray that metal surface 21 is reflected by corresponding receiver 32；Under wafer 2
The transmitter 31 of another gauge head 3 of side emits infrared ray to original surface 22 and penetrates wafer 2 to metal surface 21, and by corresponding to
Receiver 32 receive the infrared ray reflected from metal surface 21 and original surface 22 respectively；Aforementioned infrared ray meets described
It penetrates when bright layer, and in the metal surface that the inner surface of the hyaline layer is bonded 21 or original surface 22 and its outer surface, all has
The infrared ray of reflection is received by corresponding receiver 32.
Calculate 14：As shown in figure 3, there is a computing unit 4 and two gauge heads 3 to be electrically connected, the metal surface 21 of wafer 2 and original
In surface 22 and the outer surface of the hyaline layer, according to the infrared ray that aforementioned each receiver 32 is received, it is computed and obtains
It is a second distance that farthest distance, which is distance nearest between one first distance and datum plane R, between datum plane R, described
Metal surface 21 that the thickness of hyaline layer is bonded by its inner surface or original surface 22 and its outer surface are respectively between datum plane R
The difference of distance obtained, with first distance subtracts the second distance and to obtain wafer 2 include the total of an at least hyaline layer
Thickness, then with the overall thickness subtract this at least the thickness of a hyaline layer and obtain wafer 2 thickness of itself.
It is preferable that the wavelength for the infrared ray that the transmitter 31 of each gauge head 3 is emitted, which is 1300nm,；In addition, the total thickness
The measuring range of degree, preferably in 50um to 4000um.
In a preferred embodiment, an at least hyaline layer, as shown in Fig. 2, have one the original surface 22 of wafer 2 glue
Belt 5.In this embodiment, when measuring 13 step, the transmitter 31 of two gauge heads 3 is respectively to 21 He of metal surface of wafer 2
Original surface 22 emits infrared ray, and received respectively by corresponding receiver 32 reflected from metal surface 21 and original surface 22 it is red
Outer linear light.When the transmitter 31 of the gauge head 3 of 2 lower section of wafer emits infrared ray to the original surface 22 of wafer 2, infrared ray meets glue
Belt 5 penetrates, and in original surface 22, outer surface 52 and the metal surface 21 that the inner surface of adhesive tape layer 5 51 is bonded, and all has anti-
The infrared ray penetrated is received by the receiver 32 of the gauge head 3 of 2 lower section of wafer.
It holds, when calculating 14 step, the present embodiment distance between the metal surface of wafer 2 21 and datum plane R is farthest
And be one first distance D1, the present embodiment between the outer surface of adhesive tape layer 5 52 and datum plane R distance recently and be one second away from
It is a third distance D3 from D2, between the original surface 22 being bonded of inner surface 51 and datum plane R of adhesive tape layer 5.Here, adhesive tape layer
The difference that 5 thickness T1, that is, third distance D3 subtracts second distance D2 is obtained, and is subtracted second distance D2 with the first distance D1 and is obtained
Wafer 2 includes the overall thickness T of adhesive tape layer 5, then with overall thickness T subtracts the thickness T1 of adhesive tape layer 5 and obtains wafer 2 thickness of itself
T2.Wherein, the receiver 32 of the gauge head 3 above or below wafer 2 can receive the infrared ray reflected by metal surface 21, by
When computing unit 4 calculates, the infrared ray for taking the receiver 32 of the gauge head 3 of 2 lower section of wafer to be received, to measure the first distance
D1。
In another preferred embodiment, an at least hyaline layer, as shown in figure 4, including the aforementioned original surface 22 in wafer 2
Adhesive tape layer 5, separately have one the metal surface of wafer 2 21 protective layer 6, this protective layer 6 be a kind of plated film.In this embodiment
In, when measuring 13 step, the transmitter 31 of two gauge heads 3 equally respectively emits the metal surface 21 of wafer 2 and original surface 22
Infrared ray, and the infrared ray reflected from metal surface 21 and original surface 22 is received by corresponding receiver 32 respectively.Wafer 2
When the transmitter 31 of the gauge head 3 of top emits infrared ray to the metal surface 21 of wafer 2, infrared ray is met protective layer 6 and is penetrated,
And in the metal surface that the inner surface of protective layer 6 61 is bonded 21 and its outer surface 62, all there is the infrared ray of reflection by wafer 2
The receiver 32 of the gauge head 3 of top is received.The transmitter 31 of the gauge head 3 of 2 lower section of wafer emits the original surface 22 of wafer 2 red
The original surface 22, outer when outside line light, equally met adhesive tape layer 5 in infrared ray and penetrated, and be bonded in the inner surface of adhesive tape layer 5 51
Surface 52 and metal surface 21 all have the infrared ray of reflection to be received by the receiver 32 of the gauge head 3 of 2 lower section of wafer.
It holds, when calculating 14 step, the present embodiment distance between the outer surface of protective layer 6 62 and datum plane R is farthest
And be one first distance d1, the present embodiment between the outer surface of adhesive tape layer 5 52 and datum plane R distance recently and be one second away from
From d2, between the original surface 22 being bonded of inner surface 51 and datum plane R of adhesive tape layer 5 be a third distance d3, protective layer 6 it is interior
It is one the 4th distance d4 between the metal surface 21 being bonded of surface 61 and datum plane R.Here, the thickness t1 of adhesive tape layer 5 i.e.
The difference that three distance D3 subtract second distance D2 is obtained, and thickness t2 i.e. the first distance d1 of protective layer 6 subtracts the poor institute of the 4th distance d4
It obtains, with the first distance d1 subtracts second distance d2 and obtains the total thickness t that wafer 2 includes adhesive tape layer 5 and protective layer 6, then with
Total thickness t subtracts the thickness t1 of adhesive tape layer 5 and the thickness t2 of protective layer 6, to obtain the thickness t3 of wafer 2 itself.Wherein, wafer
The receiver 32 of gauge head 3 above or below in the of 2 can receive the infrared ray reflected by metal surface 21, be counted by computing unit 4
When calculation, the infrared ray for taking the receiver 32 of the gauge head 3 of 2 lower section of wafer to be received, to measure the 4th distance d4.
By above-mentioned explanation it is seen that it is an advantage of the current invention that even if the surface of wafer 2 is metal (gold as the aforementioned
Metal surface 21), the transmitter 31 and receiver 32 of infrared ray can be still set by two gauge heads 3, emitted by transmitter 31
Infrared ray metal surface 21, original surface 22 and the hyaline layer outer surface reflection after by 32 institute of corresponding receiver
Receive, and obtain in calculating 14 steps the distance between each surface and datum plane R by aforementioned computing unit 4, especially by
The infrared ray for penetrating wafer 2 reflects and learns the distance of metal surface 21 and datum plane R in metal surface 21, you can passes through
Subtract each other and obtains overall thickness that wafer 2 includes hyaline layer and the overall thickness subtracts the obtained wafer of thickness 2 of hyaline layer in itself
Thickness, and can reach measure wafer thickness accuracy and convenience.
Embodiment described above is disclosed as illustrating the present invention, not to limit the present invention, therefore numerical value such as
Change or the displacement of equivalence element should be subordinate to scope of the invention.
By detailed description above, it can make those skilled in the art that the present invention be illustrated and may achieve foregoing purpose really, it is real to have accorded with
The regulation of Patent Law is closed, therefore proposes patent application.
Claims (5)
1. a kind of method measuring wafer thickness with infrared ray, aforementioned wafer have and are obtained once epitaxy with horizontally disposed
Metal surface and one be wafer material itself original surface, the metal surface and the original surface one are another for the upper surface of wafer
One is the lower surface of the wafer, and at least one of the metal surface and the original surface have hyaline layer, the hyaline layer to have a He
The inner surface of the metal surface or original surface fitting, and have one back to the outer surface of the inner surface, which is characterized in that this method
Include the following steps：
Gauge head is set：There are two gauge heads to be respectively provided above and below the wafer, which respectively has one group of corresponding transmitter
And receiver, the transmitter of two gauge head can emit infrared ray to the metal surface of the wafer and original surface respectively, and by right
The receiver answered receives the infrared ray of reflection；
Datum plane is set：After two gauge head setting positioning, by virtual one of two gauge head itself on the wafer or under base
Directrix plane；
It measures：The transmitter of a wherein gauge head for two gauge head emits infrared ray to the metal surface, and by corresponding reception
Device receives the infrared ray of metal surface reflection；The transmitter of another gauge head emits infrared ray to the original surface and penetrates this
Wafer receives the infrared ray reflected from the metal surface and the original surface respectively to the metal surface, and by corresponding receiver
Light；Aforementioned infrared ray penetrates when meeting the hyaline layer, and in the metal surface that the inner surface of the hyaline layer is bonded
Or the original surface and its outer surface, all there is the infrared ray of reflection to be received by corresponding receiver；
It calculates：There are a computing unit and two gauge head to be electrically connected, the metal surface of the wafer and original surface and described transparent
In the outer surface of layer, according to the infrared ray that aforementioned each receiver is received, it is computed and obtains between the datum plane farthest
It is a second distance that distance, which is distance nearest between one first distance and the datum plane, wherein extremely should if the metal surface
Distance between datum plane, be by the aforementioned infrared ray for penetrating the original surface the metal surface reflection measured by；It is described
The metal surface that the thickness of bright layer is bonded by its inner surface or the original surface and its outer surface are respectively between the datum plane
The difference of distance obtained, with first distance subtracts the second distance and to obtain the wafer include the total of an at least hyaline layer
Thickness, then at least thickness of a hyaline layer and the thickness itself that obtain the wafer is subtracted with the overall thickness.
2. the method according to claim 1 for measuring wafer thickness with infrared ray, which is characterized in that described at least one thoroughly
Bright layer has an adhesive tape layer in the metal surface or the original surface for below the wafer.
3. the method according to claim 2 for measuring wafer thickness with infrared ray, which is characterized in that described at least one thoroughly
Bright layer, it is the top of the wafer in the metal surface or the original surface separately to have a protective layer.
4. the method according to claim 1 for measuring wafer thickness with infrared ray, which is characterized in that the respectively hair of the gauge head
The wavelength for the infrared ray that emitter is emitted is 1300nm.
5. the method according to claim 1 for measuring wafer thickness with infrared ray, which is characterized in that the amount of the overall thickness
Range is surveyed in 50um to 4000um.
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| CN201710130281.6A CN108572368A (en) | 2017-03-07 | 2017-03-07 | The method for measuring wafer thickness with infrared ray |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114459363A (en) * | 2022-01-14 | 2022-05-10 | 江苏汇成光电有限公司 | Method for measuring thickness of wafer in two directions |
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Application publication date: 20180925 |