CN103424078A - Film thickness gauge - Google Patents
Film thickness gauge Download PDFInfo
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- CN103424078A CN103424078A CN2012101522832A CN201210152283A CN103424078A CN 103424078 A CN103424078 A CN 103424078A CN 2012101522832 A CN2012101522832 A CN 2012101522832A CN 201210152283 A CN201210152283 A CN 201210152283A CN 103424078 A CN103424078 A CN 103424078A
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- gas
- wafer
- film thickness
- carrying platform
- thickness gauge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Provided is a film thickness gauge. An air flow generating device is arranged on one sides of a beam adjusting box and a wafer bearing table, the air flow generator can produce air flow between the beam adjusting box and the wafer bearing table, so that gas volatilized by a wafer is blown away, the gas volatilized by the wafer is prevented from entering the beam adjusting box, or the gas volatilized by the wafer is reduced, a lens in the beam adjusting box is not prone to pollution, and therefore a measurement result of the film thickness gauge is not easily influenced, and measurement precision is high.
Description
Technical field
The present invention relates to a kind of measurement mechanism, particularly relate to a kind of film thickness gauge of measuring wafer film thickness.
Background technology
Please refer to Fig. 1, in field of semiconductor manufacture, need in the wafer manufacture process film thickness on wafer is measured, at this moment just use film thickness gauge.Film thickness gauge commonly used comprises measures photogenerator, optical system and treating apparatus.Measure photogenerator and can produce light beam, the light beam produced can transfer to optical system.This optical system mainly comprises optical cable 112, polariscope 114, slit 116, light beam adjusting tank 122, is arranged at the interior gathering catoptron 124 of light beam adjusting tank 122, is arranged at the interior collecting lens 126 of light beam adjusting tank 122, is arranged at refrative mirror 128, analyser 132 and photo-detector 134 in light beam adjusting tank 122.At first beam Propagation can import through optical cable 112 to optical system; Then, reach light beam adjusting tank 122 successively after the optical elements such as polariscope 114, slit 116, the light beam that enters this light beam adjusting tank 122 is called incident beam; Incident beam through overbunching catoptron 124 converge with reflex after reach on the wafer to be measured 110 below light beam adjusting tank 122, by ejaculation from light beam adjusting tank 122 after condenser 126 and refrative mirror 128 successively after wafer 110 reflections to be measured; Finally reach analyser 132, then received by photo-detector 134, the light beam received by photo-detector 134 from 122 ejaculations of light beam adjusting tank is called outgoing beam.Outgoing beam and incident beam can be further through the analysis for the treatment of apparatus, and their light intensity is contrasted, thereby is calculated the thickness of wafer 110 upper films to be measured.
Yet, this film thickness gauge in use can produce because of wafer 110 to be measured corrosive gas through the super-corrosion process rear surface makes gathering catoptron 124, collecting lens 126 and refrative mirror 128 surfaces in light beam adjusting tank 122 contaminated, thereby the light intensity of light path conduction is reduced, affect measurement result, the measuring accuracy step-down.
Summary of the invention
Based on this, be necessary to provide a kind of film thickness gauge, its measurement result is susceptible to not, and measuring accuracy is higher.
A kind of for measuring the film thickness gauge of wafer upper film thickness, described film thickness gauge comprises the measuring beam generator that produces measuring beam, optical system, treating apparatus and carry described measuring beam generator, optical system, the framework for support for the treatment of apparatus, the measuring beam that described optical system produces the measuring beam generator conducts to the film on wafer, and the measuring beam of the reflection of the film on wafer is conducted to treating apparatus, calculate the thickness of wafer upper film after the beam treatment that described treating apparatus transmits optical system, described framework for support is provided with the wafer carrying platform, described optical system comprises the light beam adjusting tank, described light beam adjusting tank be arranged at described wafer carrying platform top and and described wafer carrying platform between form space, it is characterized in that, one side of described wafer carrying platform is provided with gas flow generator, described gas flow generator pilot gas is by the space between described light beam adjusting tank and described wafer carrying platform.
In embodiment, described gas flow generator comprises the admission gear that is arranged at described wafer carrying platform one side therein.
Therein in embodiment, the side that described wafer carrying platform is relative with described admission gear is provided with the gas outlet that the gas that passes through described space that described admission gear is produced is guided away.
In embodiment, described gas outlet is the wafer load mouth therein.
Therein in embodiment, described admission gear comprise with described light beam adjusting tank and described wafer carrying platform between the relative gas vent in space and for passing into the gas access of gas.
In embodiment, be provided with a plurality of dividing plates that gas uniform transferred out to gas vent between described gas access and gas vent therein.
In embodiment, described gas vent is rectangular therein.
In embodiment, the height of described gas vent is consistent with the distance between described light beam adjusting tank and described wafer carrying platform therein.
In embodiment, the gas passed through in described gas flow generator is nitrogen or inert gas therein.
The light beam adjusting tank of above-mentioned film thickness gauge and wafer carrying platform both sides are provided with gas flow generator, this gas flow generator can produce air-flow between light beam adjusting tank and wafer carrying platform, thereby the gas of wafer volatilization is blown away, avoid or reduce the gas that wafer volatilizees to enter the light beam adjusting tank, eyeglass in the light beam adjusting tank is not vulnerable to pollute, therefore the measurement result of this film thickness gauge is difficult for being affected, and measuring accuracy is higher.
The accompanying drawing explanation
Fig. 1 is the fundamental diagram of film thickness gauge commonly used;
The schematic diagram that the corrosive gas that the wafer that Fig. 2 is an embodiment produces is taken away by air-flow;
The admission gear that Fig. 3 is an embodiment coordinates corrosive gas that wafer is produced to take away schematic diagram with gas outlet;
The admission gear schematic diagram that Fig. 4 is an embodiment.
Embodiment
Please refer to Fig. 2, in an embodiment, provide a kind of for measuring the film thickness gauge of wafer 210 upper film thickness, this film thickness gauge comprises the measuring beam generator that produces measuring beam, optical system, treating apparatus and carrying measuring beam generator, optical system, the framework for support for the treatment of apparatus, the measuring beam that described optical system produces the measuring beam generator conducts to the film on wafer 210, and the measuring beam of the reflection of the film on wafer 210 is conducted to treating apparatus, calculate the thickness of wafer 210 upper films after the beam treatment that treating apparatus transmits optical system.This framework for support is provided with wafer carrying platform 220, optical system comprises light beam adjusting tank 240, light beam adjusting tank 240 be arranged at wafer carrying platform 220 top and and wafer carrying platform 220 between form space, one side of wafer carrying platform 220 is provided with gas flow generator, and this gas flow generator pilot gas is by the space between light beam adjusting tank 240 and wafer carrying platform 220.
Wherein, light beam adjusting tank 240 and wafer carrying platform 220 at intervals, so can have a space between them.When wafer 210 is positioned on wafer carrying platform 220, also there is a space between wafer 210 and light beam adjusting tank 240.This space can allow gas to pass through.Wafer carrying platform 220 can be adjusted the size in space between wafer 210 and light beam adjusting tank 240.
Wherein, the effect of gas flow generator is gas to be transported to the opposite side of light beam adjusting tank 240 from the space of a side between light beam adjusting tank 240 and wafer carrying platform 220 of light beam adjusting tank 240.Gas flow generator can be a blowing device (by the space between gas blow light beam adjusting tank 240 and wafer carrying platform 220), can be also an air outlet (space that gas is discharged and flowed through between light beam adjusting tank 240 and wafer carrying platform 220 from this air outlet) structure (gas enters exhaust outlet from air outlet is gone out the space of flowing through between light beam adjusting tank 240 and wafer carrying platform 220) that can also match with exhaust outlet for an air outlet.Gas flow generator herein is gas to be transported to the device of the opposite side in the space between wafer carrying platform 220 and light beam adjusting tank 240 from a side in the space between wafer carrying platform 220 and light beam adjusting tank 240, and its Main Function is that the space between wafer carrying platform 220 and light beam adjusting tank 240 forms air-flow to take away the gas of wafer volatilization.
When utilizing this film thickness gauge to measure the thickness of wafer 210 upper films, wafer 210 can be placed on wafer carrying platform 220, and is adjusted to suitable position, light beam adjusting tank 240 belows by wafer carrying platform 220.Gas flow generator can produce air-flow between wafer 210 adjustment and light beam adjusting tank 240, thereby the gas of wafer volatilization is blown away, thereby prevents or reduce that the gas that wafer volatilizees enters in light beam adjusting tank 240.Optical element in light beam adjusting tank 240, for example assemble catoptron, collecting lens, refrative mirror like this, just is difficult for contaminatedly, and the measuring accuracy of film thickness gauge will be higher like this.
Please refer to Fig. 3, the gas flow generator of this film thickness gauge comprises the admission gear 260 that is relatively arranged on light beam adjusting tank 240 and wafer carrying platform 220 both sides.In addition, a side relative with admission gear 260 of wafer carrying platform 220 is provided with the gas outlet 280 that the gas that passes through the space between wafer carrying platform 220 and light beam adjusting tank 240 of admission gear 260 generations is guided away.The effect of gas outlet 280 herein is that gas is derived and is beneficial to gas by the space between wafer carrying platform 220 and light beam adjusting tank 240.Gas outlet 280 herein can directly utilize the wafer load mouth, and the gas outlet 280 as this film thickness gauge gas flow generator for the entrance wafer load mouth that loads wafer that adopts this film thickness gauge self to configure, can reduce element like this, cost-saving.Like this, gas can be through the space between wafer carrying platform 220 and light beam adjusting tank 240 out from admission gear 260, then enters the wafer load mouth and discharges this film thickness gauge.
Please refer to Fig. 4, this admission gear 260 comprise with light beam adjusting tank 240 and wafer carrying platform 220 between the relative gas vent in space 264 and the gas access 262 for passing into gas.
Be provided with a plurality of dividing plates 266 that gas uniform transferred out to gas vent 264 between gas access 262 and gas vent 264.The area of gas access 262 herein is less than the area of gas vent 264, if not being set, dividing plate 266 may not cause gas vent 264 places larger over against 262De position, gas access air-flow, other local air-flow is less, and air-flow is inhomogeneous, the effect that the gas of wafer 210 volatilizations is taken away in impact.
The gas vent 264 of this admission gear 260 is rectangular, gas vent 264 adopt the design of rectangles be for light beam adjusting tank 240 and wafer carrying platform 220 between the cross sectional shape in space corresponding, the effect of taking away better to play gas that wafer 210 is volatilized.Distance between the height of this rectangle gas vent 264 and light beam adjusting tank 240 and wafer carrying platform 220 is consistent, and the diameter of length and wafer 210 or the length of light beam adjusting tank 240 are consistent.
In addition, the gas passed through in gas flow generator is nitrogen or inert gas.Nitrogen herein or inert gas are to pass into to admission gear 260.Adopt nitrogen or inert gas to take away the gas that wafer 210 volatilizees herein and can avoid wafer 210 and the gas on wafer 210 surfaces of flowing through to react, affect wafer 210 character or cause wafer 210 pollutions or occur bad etc.
This film thickness gauge arranges gas flow generator in light beam adjusting tank 240 and wafer carrying platform 220 both sides, this gas flow generator can produce air-flow between light beam adjusting tank 240 and wafer carrying platform 220, thereby the gas of wafer 210 volatilizations is blown away, avoid or reduce the gas that wafer 210 volatilizees to enter light beam adjusting tank 240, therefore eyeglass in light beam adjusting tank 240 is not vulnerable to pollute, the measurement result of this film thickness gauge also just is difficult for being affected, and measuring accuracy will be higher.Simultaneously, due to the vulnerable to pollution not of the eyeglass in light beam adjusting tank 240, just not fragile yet, so the serviceable life of light beam adjusting tank 240 is also just longer.Thereby saved cost.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. one kind for measuring the film thickness gauge of wafer upper film thickness, described film thickness gauge comprises measuring beam generator, optical system, the treating apparatus that produces measuring beam and carries the framework for support of described measuring beam generator, optical system, treating apparatus, the measuring beam that described optical system produces the measuring beam generator conducts to the film on wafer, and the measuring beam of the reflection of the film on wafer is conducted to treating apparatus, calculate the thickness of wafer upper film after the beam treatment that described treating apparatus transmits optical system
Described framework for support is provided with the wafer carrying platform, and described optical system comprises the light beam adjusting tank, described light beam adjusting tank be arranged at described wafer carrying platform top and and described wafer carrying platform between form space,
It is characterized in that, a side of described wafer carrying platform is provided with gas flow generator, and described gas flow generator pilot gas is by the space between described light beam adjusting tank and described wafer carrying platform.
2. film thickness gauge according to claim 1, is characterized in that, described gas flow generator comprises the admission gear that is arranged at described wafer carrying platform one side.
3. film thickness gauge according to claim 2, is characterized in that, the side that described wafer carrying platform is relative with described admission gear is provided with the gas outlet that the gas that passes through described space of described admission gear generation is guided away.
4. film thickness gauge according to claim 3, is characterized in that, described gas outlet is the wafer load mouth.
5. film thickness gauge according to claim 3, is characterized in that, described admission gear comprise with described light beam adjusting tank and described wafer carrying platform between the relative gas vent in space and for passing into the gas access of gas.
6. film thickness gauge according to claim 5, is characterized in that, is provided with a plurality of dividing plates that gas uniform transferred out to gas vent between described gas access and gas vent.
7. film thickness gauge according to claim 5, is characterized in that, described gas vent is rectangular.
8. film thickness gauge according to claim 7, is characterized in that, the height of described gas vent is consistent with the distance between described light beam adjusting tank and described wafer carrying platform.
9. according to the described film thickness gauge of any one claim in claim 1 ~ 8, it is characterized in that, the gas passed through in described gas flow generator is nitrogen or inert gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210152283.2A CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
| PCT/CN2013/075466 WO2013170726A1 (en) | 2012-05-15 | 2013-05-10 | Film thickness measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210152283.2A CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103424078A true CN103424078A (en) | 2013-12-04 |
| CN103424078B CN103424078B (en) | 2016-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210152283.2A Active CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103424078B (en) |
| WO (1) | WO2013170726A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818596A (en) * | 1996-09-06 | 1998-10-06 | Tokyo Electron, Ltd. | Film thickness measuring apparatus |
| US6331890B1 (en) * | 1998-05-01 | 2001-12-18 | Tokyo Electron Limited | Thickness measuring apparatus, substrate processing method, and substrate processing apparatus |
| JP2002267419A (en) * | 2001-03-14 | 2002-09-18 | Horiba Ltd | Film thickness measuring instrument |
| US20040150820A1 (en) * | 2002-11-26 | 2004-08-05 | Mehrdad Nikoonahad | Optical system for measuring samples using short wavelength radiation |
| CN101241870A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | Device for measuring the wafer film thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100203748B1 (en) * | 1995-12-29 | 1999-06-15 | 윤종용 | Film thickness measuring apparatus using semiconductor manufacturing process |
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2012
- 2012-05-15 CN CN201210152283.2A patent/CN103424078B/en active Active
-
2013
- 2013-05-10 WO PCT/CN2013/075466 patent/WO2013170726A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818596A (en) * | 1996-09-06 | 1998-10-06 | Tokyo Electron, Ltd. | Film thickness measuring apparatus |
| US6331890B1 (en) * | 1998-05-01 | 2001-12-18 | Tokyo Electron Limited | Thickness measuring apparatus, substrate processing method, and substrate processing apparatus |
| JP2002267419A (en) * | 2001-03-14 | 2002-09-18 | Horiba Ltd | Film thickness measuring instrument |
| US20040150820A1 (en) * | 2002-11-26 | 2004-08-05 | Mehrdad Nikoonahad | Optical system for measuring samples using short wavelength radiation |
| CN101241870A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | Device for measuring the wafer film thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013170726A1 (en) | 2013-11-21 |
| CN103424078B (en) | 2016-03-23 |
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