JP2002267419A - Film thickness measuring instrument - Google Patents
Film thickness measuring instrumentInfo
- Publication number
- JP2002267419A JP2002267419A JP2001071801A JP2001071801A JP2002267419A JP 2002267419 A JP2002267419 A JP 2002267419A JP 2001071801 A JP2001071801 A JP 2001071801A JP 2001071801 A JP2001071801 A JP 2001071801A JP 2002267419 A JP2002267419 A JP 2002267419A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- stage
- film thickness
- thickness measuring
- calibration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば半導体ウェ
ハーやレティクル／マスク、ＬＣＤ（液晶ディスプレ
イ）のガラス基板などの試料表面の薄膜の厚みを測定す
るための膜厚測定装置に関する。The present invention relates to a film thickness measuring apparatus for measuring the thickness of a thin film on a sample surface such as a semiconductor wafer, a reticle / mask, and a glass substrate of an LCD (liquid crystal display).
【０００２】[0002]
【従来の技術】上記の膜厚測定装置の一つとして、図１
を参照して明らかになるが、物質の表面で光が反射する
際の偏光状態の変化を観測して、その物質の光学定数
（屈折率や消衰係数）を、また、物質の表面に薄膜層が
存在する場合は、その膜厚や光学定数を測定する分光エ
リプソメータがある。2. Description of the Related Art FIG.
Observing the change in the polarization state when light is reflected from the surface of a substance, the optical constants (refractive index and extinction coefficient) of the substance and the thin film If a layer is present, there is a spectroscopic ellipsometer for measuring its thickness and optical constants.
【０００３】この膜厚測定装置には、一般には、試料の
収容ケースと、試料の位置決め装置と、試料の搬送用ロ
ボットとが併設されて、例えばケース内の試料をロボッ
トによって位置決め装置に搬送し、次いで位置決め後の
試料をロボットによって膜厚測定装置のステージに搬送
し、ここでの膜厚測定後に、この試料を上記のケースに
戻し、或いは、別途用意の例えば良品収容ケースに戻す
ようにシーケンスが組まれる。In general, this film thickness measuring device is provided with a sample storage case, a sample positioning device, and a sample transfer robot. For example, the sample in the case is transferred to the positioning device by a robot. Then, the sample after positioning is transported to the stage of the film thickness measuring device by the robot, and after the film thickness is measured here, the sample is returned to the above-mentioned case, or a sequence is returned to, for example, a separately prepared non-defective product storage case. Is assembled.
【０００４】[0004]
【発明が解決しようとする課題】ところで、膜厚測定装
置の性能維持を確認する目的で、一般には、校正用のサ
ンプルを試料の乗載ステージに配置して、装置の校正が
行われるが、この際、ユーザーやサービスマンが、デジ
ケータなどに保管されている校正用サンプルを、ステー
ジ上に手乗せしているのが現状であり、このようにサン
プルを手乗せすることは、校正を頻繁に行う上で非効率
的であるばかりか、手乗せの度にサンプル上の測定位置
が異なることから、校正精度が落ちる点で問題があっ
た。By the way, in order to confirm the maintenance of the performance of the film thickness measuring apparatus, generally, a calibration sample is placed on a sample mounting stage and the apparatus is calibrated. At this time, at present, users and service personnel carry the calibration samples stored in the digitizer etc. on the stage, and carrying the samples in this way requires frequent calibration. In addition to the inefficiency in performing the measurement, there is a problem in that the measurement position on the sample is different each time the hand is placed, and the calibration accuracy is reduced.
【０００５】上記の不都合をなくすために、校正用のサ
ンプルをステージ上に常設することが考えられるのであ
るが、膜厚測定装置の使用環境によっては、校正用サン
プルの膜厚が成長したり、サンプル表面に空気中の有機
物が付着したりして、オングストローム単位で考えた場
合、サンプル表面は短期間で経時変化してしまうのであ
って、長期間にわたって適正な校正用のサンプルとして
使用することができない点で問題がある。[0005] In order to eliminate the above-mentioned inconvenience, it is conceivable that a calibration sample is permanently provided on a stage. However, depending on the use environment of the film thickness measuring device, the thickness of the calibration sample may increase. When considered in angstrom units due to the adhesion of organic substances in the air to the sample surface, the sample surface changes over time in a short period of time, so it can be used as a sample for proper calibration over a long period of time. There is a problem in that it cannot.
【０００６】一方、例えば半導体ウェハーやレティクル
／マスクなどの試料においては、試料の位置決め工程や
膜厚測定の工程、ロボットによる試料の搬送工程の際
に、試料が例えばクリーンルーム環境の雰囲気に暴露さ
れて、試料表面の薄膜に空気中の酸素が接触すること
で、薄膜基板のＳｉが酸化し、自然酸化膜による薄膜汚
染が生じる問題があった。On the other hand, in the case of a sample such as a semiconductor wafer or a reticle / mask, the sample is exposed to, for example, an atmosphere of a clean room environment during a sample positioning step, a film thickness measuring step, and a sample transporting step by a robot. In addition, when oxygen in the air comes into contact with the thin film on the sample surface, Si on the thin film substrate is oxidized, and there is a problem that thin film contamination by a natural oxide film occurs.
【０００７】この薄膜汚染の問題は、１０オングストロ
ームや３０オングストロームと言った超薄膜の開発が加
速する傾向にある状況下では、致命的な問題であり、試
料表面の経時変化を抑えることが重大な課題となってい
る。[0007] This problem of thin film contamination is a fatal problem in a situation where the development of ultra-thin films such as 10 Å or 30 Å tends to be accelerated, and it is important to suppress the temporal change of the sample surface. It has become a challenge.
【０００８】本発明は、かゝる実情に鑑みて成されたも
のであって、校正用のサンプル並びに試料の経時的な表
面変化が確実に防止される膜厚測定装置を提供すること
を目的としている。The present invention has been made in view of such circumstances, and has as its object to provide a calibration sample and a film thickness measuring apparatus capable of reliably preventing the surface of the sample from changing over time. And
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明が講じた技術的手段は次の通りである。第
１の発明では、冒頭に記載の膜厚測定装置において、試
料の乗載ステージまたはステージの近傍に、校正用のサ
ンプルを配置すると共に、このサンプル表面の雰囲気を
不活性ガスでパージするためのガス供給手段を備えて成
る点に特徴がある（請求項１）。The technical means adopted by the present invention to achieve the above object are as follows. According to a first aspect of the present invention, in the film thickness measuring apparatus described at the beginning, a calibration sample is arranged near a sample mounting stage or a stage, and an atmosphere on the sample surface is purged with an inert gas. It is characterized in that it comprises a gas supply means (claim 1).
【００１０】即ち、校正用のサンプルについて、これを
ステージまたはステージ近傍に常設して、サンプル表面
を不活性ガスでパージし、サンプル表面を例えばクリー
ンルーム環境の雰囲気から遮断するのであって、これに
よってサンプル表面の経時変化が生じなくなることか
ら、サンプル表面の初期状態を長く保存できるようにな
り、校正用サンプルを長期間にわたって適正に使用可能
となる。That is, a sample for calibration is provided permanently on a stage or in the vicinity of the stage, the surface of the sample is purged with an inert gas, and the surface of the sample is cut off, for example, from the atmosphere of a clean room environment. Since the surface does not change with time, the initial state of the sample surface can be preserved for a long time, and the calibration sample can be used properly for a long period of time.
【００１１】しかも、校正用のサンプルを常設すること
は、頻繁に行う校正の高効率化に繋がるのであり、更
に、サンプル上の測定位置が常時一定になることから、
校正精度の向上も達成されるのである。In addition, the permanent provision of a calibration sample leads to higher efficiency of frequent calibration, and furthermore, since the measurement position on the sample is always constant,
Improvements in calibration accuracy are also achieved.
【００１２】今一つの本発明による膜厚測定装置は、冒
頭に記載の膜厚測定装置において、試料の収容ケース
と、試料の位置決め装置と、試料の乗載ステージと、試
料の搬送用ロボットのそれぞれに、試料表面の雰囲気を
不活性ガスでパージするためのガス供給手段を備えて成
る点に特徴がある（請求項２）。A film thickness measuring apparatus according to another aspect of the present invention is the film thickness measuring apparatus described at the beginning, wherein each of a sample housing case, a sample positioning device, a sample mounting stage, and a sample transfer robot is provided. Another feature is that a gas supply means for purging the atmosphere on the sample surface with an inert gas is provided (claim 2).
【００１３】即ち、ケースに収容の試料と、位置決め工
程や膜厚測定の工程、更には、ロボットによる搬送工程
下にある試料について、この試料表面を不活性ガスでパ
ージして、試料表面を周囲の雰囲気から遮断すること
で、測定シーケンス中での例えば自然酸化膜による試料
の薄膜汚染が確実に防止される。That is, with respect to the sample housed in the case and the sample in the positioning step, the film thickness measuring step, and the transfer step by the robot, the surface of the sample is purged with an inert gas, and the surface of the sample is cleaned. By isolating the sample from the atmosphere, thin film contamination of the sample due to, for example, a natural oxide film in the measurement sequence is reliably prevented.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図１及び図２は一実施の形態にか
ゝる膜厚測定装置の構成図を示し、図中の１は照射光学
系で、例えば１９０〜８３０ｎｍの広い波長領域の光を
照射するキセノンランプよる光源２と、スリット３と、
ビーム縮小光学系（例えば２枚の凹面鏡から成る。）４
と、偏光子５とから成る。Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 and 2 show a configuration diagram of a film thickness measuring apparatus according to an embodiment. In the drawings, reference numeral 1 denotes an irradiation optical system, which is a xenon lamp that irradiates light in a wide wavelength range of 190 to 830 nm, for example. Light source 2, slit 3,
Beam reduction optical system (for example, composed of two concave mirrors) 4
And a polarizer 5.
【００１５】この照射光学系１は、光源１からの多波長
の光を縮小し、かつ、所定の偏光方位の直線偏光６にし
て、これをステージ７上の試料８の表面８ａに、所定角
度斜め上方からスポット照射するもので、上記のステー
ジ７は、水平のＸ方向ならびにＹ方向と鉛直のＺ方向の
三次元方向に駆動可能に構成されており、試料８は、バ
キュームによってステージ３上に吸着保持されるように
なっている。The irradiation optical system 1 reduces the multi-wavelength light from the light source 1 and converts the light into linearly polarized light 6 having a predetermined polarization direction, and the linearly polarized light 6 is placed on a surface 8a of a sample 8 on a stage 7 at a predetermined angle. The stage 7 irradiates a spot from obliquely above. The stage 7 is configured to be driven in a three-dimensional direction of a horizontal X direction and a vertical Z direction, and the sample 8 is placed on the stage 3 by vacuum. It is designed to be held by suction.
【００１６】９は検出光学系で、ステージ７上の試料表
面８ａで反射した楕円偏光１０の偏光変化量の情報を例
えば分光器１１に出力するもので、位相変調素子１２
と、検光子１３と、分光器１１への信号取り出し用のフ
ァイバー１４とから成る。Reference numeral 9 denotes a detection optical system which outputs information on the amount of polarization change of the elliptically polarized light 10 reflected by the sample surface 8a on the stage 7 to, for example, a spectroscope 11, and a phase modulation element 12
, An analyzer 13, and a fiber 14 for extracting a signal to the spectroscope 11.
【００１７】上記の分光器１１からの測定データ、即
ち、試料表面８ａで反射した光の偏光変化量の測定デー
タは、例えば画像処理機能を有するコンピュータ１５に
出力されて、適宜演算処理されたり画像処理されたり
し、試料表面８ａの光学定数（屈折率や消衰係数）と試
料表面８ａの薄膜の膜厚が測定される。The measurement data from the spectroscope 11, that is, the measurement data of the amount of polarization change of the light reflected on the sample surface 8a, is output to, for example, a computer 15 having an image processing function, and is subjected to appropriate arithmetic processing or image processing. After processing, the optical constants (refractive index and extinction coefficient) of the sample surface 8a and the thickness of the thin film on the sample surface 8a are measured.
【００１８】１６はステージ７の上方に配備の光学顕微
鏡、１７は光学顕微鏡１６の後段に備えられたカメラ
（例えばＣＣＤカメラ）で、このカメラ１７からの出力
もコンピュータ１５に入力されて、適宜演算処理された
り画像処理されたりする。Reference numeral 16 denotes an optical microscope provided above the stage 7. Reference numeral 17 denotes a camera (for example, a CCD camera) provided at a stage subsequent to the optical microscope 16. The output from the camera 17 is also input to the computer 15, and is appropriately operated. Processed or image processed.
【００１９】１８は密封タイプの試料収容ケース、１９
は試料８の搬送用ロボット、２０はケース１８からの取
り出し試料８の位置決め装置で、ケース１８内の試料８
をロボット１９によって位置決め装置２０に搬送し、次
いで位置決め後の試料８をロボット１９によって上記の
ステージ７に搬送し、ここでの膜厚測定後に、この試料
８を上記のケース１８に戻すようにシーケンスが組まれ
る。Reference numeral 18 denotes a sealed type sample storage case;
Is a robot for transporting the sample 8, 20 is a positioning device for the sample 8 taken out of the case 18,
Is transported to the positioning device 20 by the robot 19, and then the sample 8 after positioning is transported to the stage 7 by the robot 19, and after measuring the film thickness, the sequence is returned to the case 18. Is assembled.
【００２０】上記のシーケンスは一例であって、例えば
膜厚測定後の試料８を、それが不良品の場合は、上記の
ケース１８に戻し、良品の場合は、別途用意の例えば良
品収容ケース１８ａに収容するようなシーケンスなどが
適宜に選択される。The above sequence is an example. For example, the sample 8 after measuring the film thickness is returned to the above-mentioned case 18 when it is defective, and when it is non-defective, for example, a separately prepared non-defective case 18 a A sequence or the like to be accommodated in the device is appropriately selected.
【００２１】上記の構成にかゝる膜厚測定装置におい
て、本発明では、試料乗載用のステージ７の四隅の任意
の箇所に、必要な各種の校正用サンプル２１を配置し、
具体的には、図３に示すように、ステージ７上に支持ブ
ロック２２を設けて、このブロック２２上に校正用サン
プル２１を配置すると共に、サンプル２１の表面を暴露
する状態で、これらサンプル２１とブロック２２とを囲
うようにケース２３を設け、かつ、ケース２３の下部側
に、サンプル表面の雰囲気を不活性ガス（例えばＮ2 ガ
ス）でパージするためのガス供給手段２４を備えてい
る。In the film thickness measuring apparatus having the above-described configuration, in the present invention, various necessary calibration samples 21 are arranged at arbitrary positions at four corners of the sample mounting stage 7.
Specifically, as shown in FIG. 3, a support block 22 is provided on the stage 7, the calibration sample 21 is disposed on the block 22, and the sample 21 is exposed while exposing the surface of the sample 21. A case 23 is provided so as to surround the sample and the block 22, and a gas supply means 24 for purging the atmosphere on the sample surface with an inert gas (for example, N 2 gas) is provided below the case 23.
【００２２】更に、試料収容ケース（上記の良品収容ケ
ースを別途用意するときは、このケースを含む）１８
と、試料８の位置決め装置１９と、試料８の乗載ステー
ジ７と、試料８の搬送用ロボット１９のそれぞれに、試
料表面の雰囲気を不活性ガス（例えばＮ2 ガス）でパー
ジするためのガス供給手段２５を備えている。Further, a sample storage case (including the non-defective product storage case described above, this case is included) 18
A gas for purging the atmosphere on the sample surface with an inert gas (for example, N 2 gas) to each of the positioning device 19 for the sample 8, the mounting stage 7 for the sample 8, and the transfer robot 19 for the sample 8. Supply means 25 is provided.
【００２３】即ち、校正用のサンプル２１をステージ７
に常設して、このサンプル表面を例えばクリーンルーム
環境の雰囲気から遮断するように、サンプル表面を不活
性ガスでパージし、サンプル表面の経時変化を抑制した
のであって、これによってサンプル表面の初期状態が長
く保存されることから、校正用サンプル２１を長期間に
わたって適正に使用することが可能となる。That is, the calibration sample 21 is placed on the stage 7
The sample surface was purged with an inert gas so as to isolate the sample surface from, for example, the atmosphere of a clean room environment, thereby suppressing the aging of the sample surface. Since the calibration sample 21 is stored for a long time, the calibration sample 21 can be appropriately used for a long period of time.
【００２４】しかも、校正用のサンプルを常設すること
は、頻繁に行う校正の高効率化に繋がるのであり、更
に、サンプル上の測定位置が常時一定になることから、
校正精度の向上も達成されるのである。In addition, the permanent provision of a calibration sample leads to higher efficiency of frequent calibration, and the measurement position on the sample is always constant.
Improvements in calibration accuracy are also achieved.
【００２５】この校正に際しては、ステージ７をＸ方向
ならびにＹ方向に駆動させて、ステージ７上の試料表面
８ａへの直線偏光６のスポット照射位置に、校正用サン
プル２１を移動させるのであり、この際、スポット照射
の位置とサンプル２１位置の座標を、前もってステージ
７の駆動制御手段（図示を省略）に入力しておくことに
よって、校正用サンプル２１をスポット照射位置に再現
よく、位置合わせすることができる。At the time of this calibration, the stage 7 is driven in the X and Y directions to move the calibration sample 21 to the spot irradiation position of the linearly polarized light 6 on the sample surface 8a on the stage 7. In this case, the coordinates of the spot irradiation position and the coordinates of the sample 21 position are input in advance to the drive control means (not shown) of the stage 7 so that the calibration sample 21 can be reproducibly aligned with the spot irradiation position. Can be.
【００２６】一方、ケース（別途用意の良品収容ケース
を含む）１８に収容の試料８と、位置決め工程や膜厚測
定の工程、更には、ロボット１９による搬送工程下にあ
る試料８についても、この試料表面を不活性ガスでパー
ジして、試料表面を周囲の雰囲気から遮断しているの
で、測定シーケンス中での例えば自然酸化膜による試料
８の薄膜汚染が確実に防止されるのである。On the other hand, the sample 8 housed in a case (including a separately prepared non-defective product housing case) 18, the positioning step, the film thickness measuring step, and the sample 8 under the transporting step by the robot 19 are also subjected to this process. Since the sample surface is purged with an inert gas and the sample surface is shielded from the surrounding atmosphere, thin film contamination of the sample 8 due to, for example, a natural oxide film during the measurement sequence is reliably prevented.
【００２７】ここで、校正用サンプル２１をステージ７
の四隅の任意の箇所に配置しているが、これは一例であ
って、ステージ７近傍の装置構成部材に校正用サンプル
２１を配置する形態をとってもよいのである。Here, the calibration sample 21 is placed on the stage 7
Are arranged at arbitrary positions in the four corners, but this is only an example, and a configuration in which the calibration sample 21 is arranged on an apparatus component near the stage 7 may be adopted.
【００２８】尚、図中の２６は不活性ガスの供給ボン
ベ、２７はガス制御弁、２８は不活性ガスの供給ライン
である。In the figure, reference numeral 26 denotes an inert gas supply cylinder, 27 denotes a gas control valve, and 28 denotes an inert gas supply line.
【００２９】[0029]
【発明の効果】以上説明したように、請求項１記載の発
明では、校正用サンプルの表面を不活性ガスでパージ
し、請求項２記載の発明では、試料表面を不活性ガスで
パージして、校正用サンプルの表面ならびに試料の表面
を周囲の雰囲気から遮断したことで、校正用のサンプル
については、サンプル表面の初期状態を長く保存できる
ことから、校正用サンプルを長期間にわたって適正に使
用できるようになった。As described above, in the first aspect of the present invention, the surface of the calibration sample is purged with an inert gas, and in the second aspect of the invention, the sample surface is purged with an inert gas. By isolating the surface of the calibration sample and the surface of the sample from the surrounding atmosphere, the initial state of the sample surface can be preserved for the calibration sample for a long time, so that the calibration sample can be used properly over a long period of time. Became.
【００３０】一方、膜厚測定の試料についても、測定シ
ーケンス中での例えば自然酸化膜による試料の薄膜汚染
が確実に防止されるようになり、特に、校正用のサンプ
ルを常設する請求項１記載の発明では、頻繁に行う校正
の高効率化と校正精度の向上とが達成される利点があ
る。On the other hand, with respect to the sample for measuring the film thickness, the thin film contamination of the sample due to, for example, a natural oxide film during the measurement sequence can be reliably prevented, and in particular, the calibration sample is permanently provided. According to the invention, there is an advantage that the efficiency of the frequent calibration is improved and the calibration accuracy is improved.
【図１】膜厚測定の光学系を示す構成図である。FIG. 1 is a configuration diagram showing an optical system for measuring a film thickness.
【図２】膜厚測定シーケンスを説明するための膜厚測定
装置の斜視図である。FIG. 2 is a perspective view of a film thickness measuring device for explaining a film thickness measuring sequence.
【図３】校正用サンプルの表面に対する不活性ガスの供
給手段を示す断面図である。FIG. 3 is a cross-sectional view showing a means for supplying an inert gas to the surface of a calibration sample.
７…試料の乗載用ステージ、８…試料、８ａ…試料表
面、１８…試料収容ケース、１９…試料搬送用ロボッ
ト、２０…試料の位置決め装置、２１…校正用サンプ
ル、２４，２５…不活性ガスの供給手段。7: Sample mounting stage, 8: Sample, 8a: Sample surface, 18: Sample storage case, 19: Sample transfer robot, 20: Sample positioning device, 21: Calibration sample, 24, 25: Inactive Gas supply means.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 片西 章浩 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内 Ｆターム(参考） 2F065 AA30 CC02 CC21 DD13 FF49 GG03 GG23 HH12 LL02 LL28 LL33 LL34 LL67 PP12 QQ31 RR07 TT01 TT02 UU04 4M106 AA01 BA06 CA48 CA70 DH03 DH12 DH31 DH40 DH50 DH60 DJ01 DJ20 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Akihiro Katanishi 2nd Higashicho, Kichijoin-gu, Minami-ku, Kyoto, Kyoto Prefecture F-term (reference) 2F065 AA30 CC02 CC21 DD13 FF49 GG03 GG23 HH12 LL02 LL28 LL33 LL34 LL67 PP12 QQ31 RR07 TT01 TT02 UU04 4M106 AA01 BA06 CA48 CA70 DH03 DH12 DH31 DH40 DH50 DH60 DJ01 DJ20
Claims (2)
光変化量の測定情報に基づいて試料表面の薄膜の厚みを
測定するように構成された膜厚測定装置であって、試料
の乗載ステージまたはステージの近傍に、校正用のサン
プルを配置すると共に、このサンプル表面の雰囲気を不
活性ガスでパージするためのガス供給手段を備えて成る
ことを特徴とする膜厚測定装置。1. A film thickness measuring device configured to measure a thickness of a thin film on a sample surface based on measurement information of a polarization change amount of light reflected on a sample surface on a stage, wherein the sample is mounted on the stage. A film thickness measuring apparatus comprising: a stage or a sample near a stage; and a gas supply means for purging an atmosphere on the surface of the sample with an inert gas.
光変化量の測定情報に基づいて試料表面の薄膜の厚みを
測定するように構成された膜厚測定装置であって、試料
の収容ケースと、試料の位置決め装置と、試料の乗載ス
テージと、試料の搬送用ロボットのそれぞれに、試料表
面の雰囲気を不活性ガスでパージするためのガス供給手
段を備えて成ることを特徴とする膜厚測定装置2. A film thickness measuring device configured to measure a thickness of a thin film on a sample surface based on measurement information of a polarization change amount of light reflected on a sample surface on a stage, wherein the sample accommodating case is provided. And a sample positioning device, a sample mounting stage, and a sample transport robot, each comprising a gas supply means for purging an atmosphere on the sample surface with an inert gas. Thickness measuring device
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001071801A JP2002267419A (en) | 2001-03-14 | 2001-03-14 | Film thickness measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001071801A JP2002267419A (en) | 2001-03-14 | 2001-03-14 | Film thickness measuring instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002267419A true JP2002267419A (en) | 2002-09-18 |
Family
ID=18929478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001071801A Pending JP2002267419A (en) | 2001-03-14 | 2001-03-14 | Film thickness measuring instrument |
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| Country | Link |
|---|---|
| JP (1) | JP2002267419A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261473A (en) * | 2005-03-18 | 2006-09-28 | National Institute Of Advanced Industrial & Technology | Method for storing silicon substrate with formed silicon oxide film |
| CN102141698A (en) * | 2011-03-04 | 2011-08-03 | 深圳市华星光电技术有限公司 | Film thickness measuring device and correction method thereof |
| WO2013170726A1 (en) * | 2012-05-15 | 2013-11-21 | 无锡华润上华科技有限公司 | Film thickness measuring instrument |
| CN110896037A (en) * | 2018-09-12 | 2020-03-20 | 东泰高科装备科技（北京）有限公司 | Membrane thickness detection device, online detection system and method |
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| JPH047852A (en) * | 1990-04-25 | 1992-01-13 | Fujitsu Ltd | Film thickness measuring method |
| JPH0712524A (en) * | 1993-06-24 | 1995-01-17 | Sony Corp | Film thickness measuring device |
| JPH1082631A (en) * | 1996-09-06 | 1998-03-31 | Tokyo Electron Ltd | Apparatus for measuring film thickness |
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2001
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02122306U (en) * | 1989-03-17 | 1990-10-05 | ||
| JPH047852A (en) * | 1990-04-25 | 1992-01-13 | Fujitsu Ltd | Film thickness measuring method |
| JPH0712524A (en) * | 1993-06-24 | 1995-01-17 | Sony Corp | Film thickness measuring device |
| JPH1082631A (en) * | 1996-09-06 | 1998-03-31 | Tokyo Electron Ltd | Apparatus for measuring film thickness |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261473A (en) * | 2005-03-18 | 2006-09-28 | National Institute Of Advanced Industrial & Technology | Method for storing silicon substrate with formed silicon oxide film |
| CN102141698A (en) * | 2011-03-04 | 2011-08-03 | 深圳市华星光电技术有限公司 | Film thickness measuring device and correction method thereof |
| CN102141698B (en) * | 2011-03-04 | 2012-07-11 | 深圳市华星光电技术有限公司 | Film thickness measuring device and correction method thereof |
| WO2012119328A1 (en) * | 2011-03-04 | 2012-09-13 | 深圳市华星光电技术有限公司 | Film thickness measurement device and correction method thereof |
| WO2013170726A1 (en) * | 2012-05-15 | 2013-11-21 | 无锡华润上华科技有限公司 | Film thickness measuring instrument |
| CN103424078A (en) * | 2012-05-15 | 2013-12-04 | 无锡华润上华科技有限公司 | Film thickness gauge |
| CN110896037A (en) * | 2018-09-12 | 2020-03-20 | 东泰高科装备科技（北京）有限公司 | Membrane thickness detection device, online detection system and method |
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