CN103424078B - Film thickness gauge - Google Patents
Film thickness gauge Download PDFInfo
- Publication number
- CN103424078B CN103424078B CN201210152283.2A CN201210152283A CN103424078B CN 103424078 B CN103424078 B CN 103424078B CN 201210152283 A CN201210152283 A CN 201210152283A CN 103424078 B CN103424078 B CN 103424078B
- Authority
- CN
- China
- Prior art keywords
- wafer
- gas
- film thickness
- carrying platform
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
A kind of film thickness gauge for measuring film thickness on wafer, light beam adjusting tank and the wafer carrying platform side of this film thickness gauge are provided with gas flow generator, this gas flow generator can produce air-flow between light beam adjusting tank and wafer carrying platform, thus the gas that wafer volatilizees is blown away, avoid or reduce the gas that wafer volatilizees to enter light beam adjusting tank, eyeglass in light beam adjusting tank is not vulnerable to pollute, and therefore the measurement result of this film thickness gauge is not easily affected, and measuring accuracy is higher.
Description
Technical field
The present invention relates to a kind of measurement mechanism, particularly relate to a kind of film thickness gauge measuring wafer film thickness.
Background technology
Please refer to Fig. 1, in field of semiconductor manufacture, need in wafer manufacturing process to measure the film thickness on wafer, at this moment just use film thickness gauge.Conventional film thickness gauge comprises measures photogenerator, optical system and treating apparatus.Measure photogenerator and can produce light beam, the light beam produced can transfer to optical system.This optical system mainly comprises optical cable 112, polariscope 114, slit 116, light beam adjusting tank 122, the gathering catoptron 124 be arranged in light beam adjusting tank 122, the collecting lens 126 be arranged in light beam adjusting tank 122, the refrative mirror 128 be arranged in light beam adjusting tank 122, analyser 132 and photo-detector 134.Can first import through optical cable 112 after beam Propagation to optical system; Then, after the optical elements such as polariscope 114, slit 116, reach light beam adjusting tank 122 successively, the light beam entering this light beam adjusting tank 122 is called incident beam; Incident beam reaches on the wafer to be measured 110 below light beam adjusting tank 122 after the convergence and reflex of overbunching catoptron 124, through condenser 126 with refrative mirror 128 after from light beam adjusting tank 122 penetrates successively after being reflected by wafer 110 to be measured; Finally reach analyser 132, then receive by photo-detector 134, penetrate from light beam adjusting tank 122 and be called outgoing beam by the light beam that photo-detector 134 receives.Outgoing beam and incident beam further across the analysis for the treatment of apparatus, and can contrast their light intensity, thus calculate the thickness of film on wafer 110 to be measured.
But, this film thickness gauge in use can make the gathering catoptron 124 in light beam adjusting tank 122, collecting lens 126 and refrative mirror 128 surface contaminated because wafer 110 to be measured produces corrosive gas through super-corrosion process rear surface, thus the light intensity making light path conduct reduces, affect measurement result, measuring accuracy step-down.
Summary of the invention
Based on this, be necessary to provide a kind of film thickness gauge, its measurement result is not easily influenced, and measuring accuracy is higher.
A kind of film thickness gauge for measuring film thickness on wafer, described film thickness gauge comprises the measuring beam generator producing measuring beam, optical system, treating apparatus and carry described measuring beam generator, optical system, the framework for support for the treatment of apparatus, the measuring beam that measuring beam generator produces is conducted to the film on wafer by described optical system, and the measuring beam of the film reflector on wafer is conducted to treating apparatus, the thickness of film on wafer is calculated after the beam treatment that described treating apparatus transmits optical system, described framework for support is provided with wafer carrying platform, described optical system comprises light beam adjusting tank, the top that described light beam adjusting tank is arranged at described wafer carrying platform also and between described wafer carrying platform forms space, it is characterized in that, the side of described wafer carrying platform is provided with gas flow generator, described gas flow generator pilot gas is by the space between described light beam adjusting tank and described wafer carrying platform.
Wherein in an embodiment, described gas flow generator comprises the admission gear being arranged at described wafer carrying platform side.
Wherein in an embodiment, the side that described wafer carrying platform is relative with described admission gear is provided with the gas outlet of being guided away by the gas in described space produced by described admission gear.
Wherein in an embodiment, described gas outlet is wafer load mouth.
Wherein in an embodiment, described admission gear comprises the gas vent relative with the space between described light beam adjusting tank and described wafer carrying platform and the gas access for passing into gas.
Wherein in an embodiment, between described gas access and gas vent, be provided with multiple dividing plate gas uniform being transferred out gas vent.
Wherein in an embodiment, described gas vent is rectangular.
Wherein in an embodiment, the height of described gas vent is consistent with the distance between described light beam adjusting tank and described wafer carrying platform.
Wherein in an embodiment, the gas passed through in described gas flow generator is nitrogen or inert gas.
Light beam adjusting tank and the wafer carrying platform both sides of above-mentioned film thickness gauge are provided with gas flow generator, this gas flow generator can produce air-flow between light beam adjusting tank and wafer carrying platform, thus the gas that wafer volatilizees is blown away, avoid or reduce the gas that wafer volatilizees to enter light beam adjusting tank, eyeglass in light beam adjusting tank is not vulnerable to pollute, therefore the measurement result of this film thickness gauge is not easily affected, and measuring accuracy is higher.
Accompanying drawing explanation
Fig. 1 is the fundamental diagram of conventional film thickness gauge;
The schematic diagram that the corrosive gas that the wafer that Fig. 2 is an embodiment produces is taken away by air-flow;
The admission gear that Fig. 3 is an embodiment coordinates the corrosive gas produced by wafer to take away schematic diagram with gas outlet;
Fig. 4 is the admission gear schematic diagram of an embodiment.
Embodiment
Please refer to Fig. 2, in an embodiment, provide a kind of film thickness gauge for measuring film thickness on wafer 210, this film thickness gauge comprises the measuring beam generator producing measuring beam, optical system, treating apparatus and carrying measuring beam generator, optical system, the framework for support for the treatment of apparatus, the measuring beam that measuring beam generator produces is conducted to the film on wafer 210 by described optical system, and the measuring beam of the film reflector on wafer 210 is conducted to treating apparatus, the thickness of film on wafer 210 is calculated after the beam treatment that treating apparatus transmits optical system.This framework for support is provided with wafer carrying platform 220, optical system comprises light beam adjusting tank 240, the top that light beam adjusting tank 240 is arranged at wafer carrying platform 220 also and between wafer carrying platform 220 forms space, the side of wafer carrying platform 220 is provided with gas flow generator, and this gas flow generator pilot gas is by the space between light beam adjusting tank 240 and wafer carrying platform 220.
Wherein, light beam adjusting tank 240 and wafer carrying platform 220 at intervals, therefore can have a space between them.When wafer 210 is positioned on wafer carrying platform 220, also there is between wafer 210 and light beam adjusting tank 240 space.This space can allow gas to pass through.Wafer carrying platform 220 can adjust the size in space between wafer 210 and light beam adjusting tank 240.
Wherein, the effect of gas flow generator is opposite side gas being transported to light beam adjusting tank 240 from the side of light beam adjusting tank 240 through the space between light beam adjusting tank 240 and wafer carrying platform 220.Gas flow generator can be a blowing device (gas being blown over the space between light beam adjusting tank 240 and wafer carrying platform 220), also can be an air outlet (gas is discharged from this air outlet and flowed through the space between light beam adjusting tank 240 and wafer carrying platform 220), can also be an air outlet match with exhaust outlet structure (gas from air outlet go out flow through between light beam adjusting tank 240 and wafer carrying platform 220 space after enter exhaust outlet).Gas flow generator is herein the device of opposite side gas being transported to the space between wafer carrying platform 220 and light beam adjusting tank 240 from the side in the space between wafer carrying platform 220 and light beam adjusting tank 240, and its Main Function is the gas that space between wafer carrying platform 220 and light beam adjusting tank 240 forms air-flow and volatilizees to take away wafer.
When utilizing this film thickness gauge to measure the thickness of film on wafer 210, wafer 210 can be placed on wafer carrying platform 220, and is adjusted to position suitable below light beam adjusting tank 240 by wafer carrying platform 220.Gas flow generator can adjust at wafer 210 and produce air-flow between light beam adjusting tank 240, thus is blown away by the gas that wafer volatilizees, thus prevents or reduce the gas that wafer volatilizees to enter in light beam adjusting tank 240.Optical element in such light beam adjusting tank 240, such as, assemble catoptron, collecting lens, refrative mirror, and just not easily contaminated, the measuring accuracy of such film thickness gauge will be higher.
Please refer to Fig. 3, the gas flow generator of this film thickness gauge comprises the admission gear 260 being relatively arranged on light beam adjusting tank 240 and wafer carrying platform 220 both sides.In addition, the side relative with admission gear 260 of wafer carrying platform 220 is provided with the gas outlet 280 of being guided away by the gas in the space between wafer carrying platform 220 and light beam adjusting tank 240 produced by admission gear 260.The effect of gas outlet 280 is herein derived by gas to be beneficial to gas by the space between wafer carrying platform 220 and light beam adjusting tank 240.Gas outlet 280 herein can directly utilize wafer load mouth, namely adopt this film thickness gauge self to configure for loading the entrance wafer load mouth of wafer as the gas outlet 280 of this film thickness gauge gas flow generator, can element be reduced like this, cost-saving.Like this, gas out afterwards can space between wafer carrying platform 220 and light beam adjusting tank 240 from admission gear 260, then enters wafer load mouth and discharges this film thickness gauge.
Please refer to Fig. 4, this admission gear 260 comprises the gas vent 264 relative with the space between light beam adjusting tank 240 and wafer carrying platform 220 and the gas access 262 for passing into gas.
Multiple dividing plate 266 gas uniform being transferred out gas vent 264 is provided with between gas access 262 and gas vent 264.The area of gas access 262 is herein less than the area of gas vent 264, gas vent 264 place may be caused just larger to the position air-flow of gas access 262 if do not arrange dividing plate 266, other local air-flow is less, and namely air-flow is uneven, affects the effect taken away by the gas that wafer 210 volatilizees.
The gas vent 264 of this admission gear 260 is rectangular, gas vent 264 adopts the design of rectangle to be in order to corresponding with the cross sectional shape in the space between light beam adjusting tank 240 and wafer carrying platform 220, better to play the effect taken away by the gas that wafer 210 volatilizees.The height of this rectangular gas outlet 264 is consistent with the distance between light beam adjusting tank 240 and wafer carrying platform 220, and length is consistent with the diameter of wafer 210 or the length of light beam adjusting tank 240.
In addition, the gas passed through in gas flow generator is nitrogen or inert gas.Nitrogen herein or inert gas pass into in admission gear 260.Gas that wafer 210 volatilizees can avoid wafer 210 to react with the gas flowing through wafer 210 surface to adopt nitrogen or inert gas to take away herein, affects wafer 210 character or causes wafer 210 to pollute or occur bad etc.
This film thickness gauge arranges gas flow generator in light beam adjusting tank 240 and wafer carrying platform 220 both sides, this gas flow generator can produce air-flow between light beam adjusting tank 240 and wafer carrying platform 220, thus the gas that wafer 210 volatilizees is blown away, avoid or reduce the gas that wafer 210 volatilizees to enter light beam adjusting tank 240, therefore eyeglass in light beam adjusting tank 240 is not vulnerable to pollute, the measurement result of this film thickness gauge is also just not easily affected, and measuring accuracy will be higher.Meanwhile, due to the not vulnerable to pollution of the eyeglass in light beam adjusting tank 240, also just not fragile, therefore the serviceable life of light beam adjusting tank 240 is also just longer.Thus saved cost.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (7)
1. one kind for measuring the film thickness gauge of film thickness on wafer, described film thickness gauge comprises the framework for support producing the measuring beam generator of measuring beam, optical system, treating apparatus and carry described measuring beam generator, optical system, treating apparatus, the measuring beam that measuring beam generator produces is conducted to the film on wafer by described optical system, and the measuring beam of the film reflector on wafer is conducted to treating apparatus, the thickness of film on wafer is calculated after the beam treatment that described treating apparatus transmits optical system
Described framework for support is provided with wafer carrying platform, and described optical system comprises light beam adjusting tank, and the top that described light beam adjusting tank is arranged at described wafer carrying platform also and between described wafer carrying platform forms space,
It is characterized in that, the side of described wafer carrying platform is provided with gas flow generator, and described gas flow generator pilot gas is by the space between described light beam adjusting tank and described wafer carrying platform; Described gas flow generator comprises the admission gear being arranged at described wafer carrying platform side; The side that described wafer carrying platform is relative with described admission gear is provided with the gas outlet of being guided away by the gas in described space produced by described admission gear.
2. the film thickness gauge for measuring film thickness on wafer according to claim 1, is characterized in that, described gas outlet is wafer load mouth.
3. the film thickness gauge for measuring film thickness on wafer according to claim 1, it is characterized in that, described admission gear comprises the gas vent relative with the space between described light beam adjusting tank and described wafer carrying platform and the gas access for passing into gas.
4. the film thickness gauge for measuring film thickness on wafer according to claim 3, is characterized in that, is provided with multiple dividing plate gas uniform being transferred out gas vent between described gas access and gas vent.
5. the film thickness gauge for measuring film thickness on wafer according to claim 3, is characterized in that, described gas vent is rectangular.
6. the film thickness gauge for measuring film thickness on wafer according to claim 5, is characterized in that, the height of described gas vent is consistent with the distance between described light beam adjusting tank and described wafer carrying platform.
7. the film thickness gauge for measuring film thickness on wafer any one of claim 1 ~ 6 described in claim, is characterized in that, the gas passed through in described gas flow generator is nitrogen or inert gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210152283.2A CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
| PCT/CN2013/075466 WO2013170726A1 (en) | 2012-05-15 | 2013-05-10 | Film thickness measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210152283.2A CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103424078A CN103424078A (en) | 2013-12-04 |
| CN103424078B true CN103424078B (en) | 2016-03-23 |
Family
ID=49583126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210152283.2A Active CN103424078B (en) | 2012-05-15 | 2012-05-15 | Film thickness gauge |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103424078B (en) |
| WO (1) | WO2013170726A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818596A (en) * | 1996-09-06 | 1998-10-06 | Tokyo Electron, Ltd. | Film thickness measuring apparatus |
| US6331890B1 (en) * | 1998-05-01 | 2001-12-18 | Tokyo Electron Limited | Thickness measuring apparatus, substrate processing method, and substrate processing apparatus |
| CN101241870A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | Device for measuring the wafer film thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100203748B1 (en) * | 1995-12-29 | 1999-06-15 | 윤종용 | Film thickness measuring apparatus using semiconductor manufacturing process |
| JP2002267419A (en) * | 2001-03-14 | 2002-09-18 | Horiba Ltd | Film thickness measuring instrument |
| US7369233B2 (en) * | 2002-11-26 | 2008-05-06 | Kla-Tencor Technologies Corporation | Optical system for measuring samples using short wavelength radiation |
-
2012
- 2012-05-15 CN CN201210152283.2A patent/CN103424078B/en active Active
-
2013
- 2013-05-10 WO PCT/CN2013/075466 patent/WO2013170726A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818596A (en) * | 1996-09-06 | 1998-10-06 | Tokyo Electron, Ltd. | Film thickness measuring apparatus |
| US6331890B1 (en) * | 1998-05-01 | 2001-12-18 | Tokyo Electron Limited | Thickness measuring apparatus, substrate processing method, and substrate processing apparatus |
| CN101241870A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | Device for measuring the wafer film thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103424078A (en) | 2013-12-04 |
| WO2013170726A1 (en) | 2013-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6134063B2 (en) | Multi-channel aerosol scattering absorption measuring instrument | |
| WO2010148293A3 (en) | Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers | |
| SE0801550L (en) | An arrangement adapted for spectral analysis | |
| KR20130084863A (en) | Apparatus for measuring the degree of transmission | |
| CN105612611B (en) | Multiple spot for improving detection sensitivity illuminates | |
| CN211718046U (en) | Dull and stereotyped granularity check out test set | |
| KR20150143436A (en) | Device for homogenizing laser radiation | |
| CN101814952A (en) | Method for testing lightwave transmission characteristics in atmospheric channel | |
| CN104483284A (en) | Optical system and detection device for flue gas monitor | |
| CN107817094B (en) | High-precision homodromous double-optical-axis and multi-optical-axis parallelism adjusting method | |
| CN107817095B (en) | High-precision homodromous double-optical-axis and multi-optical-axis parallelism adjusting method | |
| CN106483071A (en) | A kind of gas detector and its absorption cell | |
| US20140268079A1 (en) | Particle counter and immersion exposure system including the same | |
| CN103424078B (en) | Film thickness gauge | |
| CN204439539U (en) | A kind of optical system of flue gas monitoring instrument and pick-up unit | |
| CN103364360B (en) | Moisture teller | |
| CN105466821A (en) | Optical fiber dust particle sensor | |
| CN202676592U (en) | Optical system for smoke pattern measuring device | |
| CN103017691B (en) | A kind of device and method detecting silicon chip flatness | |
| CN104423174A (en) | Illumination system | |
| CN105928881B (en) | A kind of the window mirror delustring detection method and detection device of transmission-type visual range visibility meter | |
| CN102230882A (en) | Air testing platform adopting Herroitt multiple-reflection specimen chamber | |
| CN204314210U (en) | sample measuring cell | |
| CN106461736A (en) | Device for testing concentrated photovoltaic module | |
| CN103822892B (en) | Infrared gas sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |