CN101236998A - Perspective non-crystal silicon light voltage glass window - Google Patents
Perspective non-crystal silicon light voltage glass window Download PDFInfo
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- CN101236998A CN101236998A CNA2007100025672A CN200710002567A CN101236998A CN 101236998 A CN101236998 A CN 101236998A CN A2007100025672 A CNA2007100025672 A CN A2007100025672A CN 200710002567 A CN200710002567 A CN 200710002567A CN 101236998 A CN101236998 A CN 101236998A
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- photovoltaic module
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- amorphous silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The present invention discloses a special film photovoltaic module suitable for application of building integrated photovoltaic. A perspective type amorphous silicon (a-Si) photovoltaic module is formed by a transparent electrode and a partial transparent amorphous silicon semiconductor film layer, and is very suitable for photovoltaic glass windows. The perspective type amorphous silicon photovoltaic module has the characteristic of double-sided light sense.
Description
Technical field
The present invention relates to the construction of membrane photovoltaic component, especially relate to the specialty films photovoltaic module that is suitable as BIPV (BIPV) photovoltaic glass window material.
Background technology
Traditional photovoltaic product, particularly most popular Crystalline Silicon PV Module does not have light transmission, or does not have nature to be fit to the transparency that BIPV is used uniformly, and reason is that visible light can not penetrate semiconductor and/or electrode material.Fig. 1 has shown the film layer structure of the unijunction p-i-n type silicon film solar batteries of a standard.This device comprises a flat glass substrate 20, a preceding electrode 30 of making by transparent conductive oxide (TCO), a p layer 40 that constitutes by boron doped amorphous silicon alloy, i layer 50 based on intrinsic (non-doping) silicon thin film, a n layer 60 based on amorphous silicon by phosphorus doping, 90, one opaque metal conductive films 99 of transparent rear electrode of making by the TCO film, adhesive layer and glued membrane agent 100 (encapsulation medium) and a glass cover-plate 110.In this Design of device, the transparent rear electrode of being made by the TCO film 90 constitutes the rear electrode (back electrode) of nontransparent solar cell with metal conductive film 99.
By contrast, comprise the hydrogenation thin film silicon of amorphous silicon (a-Si) and nanocrystalline silicon (a-Si), can be used to make photovoltaic module with comparalive ease the visible light partially transparent.The conventional method of making part clear films silicon photovoltaic module is, with laser technology silicon thin film and electrode film removed (laser scoring, laser scribe) selectively from opaque light volt plate, and light can be through the zone of being crossed by laser treatment like this.Therefore, the transparency of photovoltaic panel is just decided by no longer energy-producing " open area ".Make light transmittance with the mode of this " ruin and remove " following several shortcoming is arranged: it is slow that laser removes process, and this has influenced the output of product; The general layout of laser treatment often seems disunity; Need senior expensive laser processing system in the process; The loss of transparency and photovoltaic active regions that is the loss of power output are directly proportional.Seem more neat if generate, the position of laser " point " is pattern relatively uniformly, will produce very large damage to photovoltaic module, causes the loss of excessive photovoltaic power output.So the photovoltaic module of making the based thin film silicon of printing opacity needs a kind of better method.
Summary of the invention
Based on above-mentioned consideration, the applicant has worked out purpose of the present invention: a kind of method of construction amorphous silicon photovoltaic module is provided, makes module just can see through some visible light naturally without removing semiconductor and electrode material.
Further purpose is, for the perspective non-crystal silicon light assembly of producing the BIPV that is fit to Application in Building provides an effectively simple method.
In order to reach the foregoing invention purpose, the present invention comes construction amorphous silicon photovoltaic module with transparency electrode with based on the p-i-n layer of amorphous silicon.Wherein thickness can see through ruddiness less than the i layer of 350 nanometers in the p-i-n layer.Sheet glass is as substrate (substrate or substrate) and cover plate, in order to protection and support photovoltaic rete.Film in all these photovoltaic devices can be produced by the equipment and the program of the opaque amorphous silicon photovoltaic assembly of traditional making.
Description of drawings
The present invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is that the rete of a traditional opaque amorphous silicon p-i-n type photovoltaic module constitutes schematic diagram.
Fig. 2 is that the rete of a perspective non-crystal silicon light assembly constitutes schematic diagram.
Embodiment
Amorphous silicon hydride (a-Si) film is a kind of semi-conducting material of partially transparent of uniqueness, and when film thickness was enough low, the photovoltaic module that can be used to make real perspective was used for the product as the windowpane.Compare with this combining glass window, traditional translucent photovoltaic window just relies on " open area " printing opacity, and the relevant film of opaque photovoltaic device has been removed to small part in the open area.
The present invention adopts the photovoltaic module of a kind of diverse ways production based on the partially transparent of silicon thin film, and main dependence makes films all in the photovoltaic device have partially transparent at least.The rete that Fig. 2 has described the perspective photovoltaic module of based thin film silicon constitutes.This device comprises an open and flat glass substrate 20, a preceding contact layer (preceding electrode) 30 that constitutes by transparent conductive oxide (TCO), band gap as boron doped non-crystal silicon carbon alloy is greater than the amorphous silicon alloy p layer 40 of the broad-band gap of 2.1eV, the i layer 50 (intrinsic silicon) based on amorphous silicon membrane of a non-doping, the n layer 60 based on amorphous silicon of a phosphorus doping, a selectable shunting suppresses layer 70, a n type boundary layer 80, a transparent rear electrode 90 (back contact is a back electrode) of making by transparent conductive oxide (TCO) film, adhesive layer and rete adhesive 100 (encapsulation medium) and a cover glass 110.In this designs, back contact is to be made by the transparent rear electrode 90 that the TCO film is made fully, does not have metal film in the conventional photovoltaic device (among Fig. 1 99 layers).Here, the i layer 50 that the requirement of a key is based on amorphous silicon membrane must enough approach, and is less than 300 nanometers, so that allow some light by the i layer.This point is possible, because amorphous silicon and nanocrystal silicon (nano-silicon) all have the suitably more weak absorption coefficient of light, so can see through silicon thin film to small part ruddiness.In addition, n layer 60 is preferably made by non-crystal silicon carbon and amorphous silicon oxygen alloy material that band gap is not less than 1.85 electronvolt (eV).Shunting suppresses layer 70 and n type boundary layer 80 is random, and these " dead layers " play a part the restriction shunting for the defect area based on the i layer 50 of amorphous silicon membrane.In order to reduce optical loss, shunting suppresses layer 70 and n type boundary layer 80 should enough approach, and/or have greater than such as the luminous energy band gap of 1.9eV.
When the transparent conductive oxide as zinc oxide is used to transparent rear electrode 90, and all are based on the p layer 40 of the film of silicon, i layer 50, n layer 60, when shunting suppresses layer 70 and n type boundary layer 80 all some is transparent at least, just can obtain the perspective solar cell of partially transparent.By regulating all these thickness and band gaps among Fig. 2, just can change the light transmittance of perspective photovoltaic module based on the film of silicon.When the thickness of active photovoltaic i layer 50 remains on below 150 nanometers, there is the light of considerable part can see through photovoltaic module, light transmittance just can be greater than 10%.P layer 40 and n layer 60 (all being to be made by the amorphous silicon alloy of broad-band gap) all should approach (will enough make solar cell power generation) as far as possible.Such photovoltaic module seems very unified nature, deposition forms on the glass substrate because all retes all are unified in, and its light transmission neither produce owing to the film that has optionally removed deposition.
The preceding electric contacting layer of non-texture (minute surface), for example level and smooth SnO
2, be (texture, the textured) SnO of bellows-shaped with regard to specific surface
2Good.Because have the SnO of coarse matte feature
2Can allow light disperse, some is fuzzy thereby make the image of Clairvoyant type.Use level and smooth TCO to be, reduce the luminous energy power of catching of light absorber, lower efficiency as the shortcoming of preceding contact layer.The light transmittance of photovoltaic module (color of light) can pass through to change the thickness of silicon thin film i layer, or the performance of the transparent conductive oxide film of preceding electrode of change photovoltaic module and rear electrode material is regulated.
, silicon thin film i layer high performance in order to produce approaches the Clairvoyant type photovoltaic module of (such as less than 250 nanometers), also needs to solve some technical problems.Primary difficulty is shunting (shunt) problem of silicon thin film i layer, especially needs shunting that is " short circuit " problem of the more transparent photovoltaic module of thinner silicon thin film.Suppress layer 70 and n type boundary layer 80 by inserting film shunting broad-band gap, relative insulation based on amorphous silicon shown in Figure 2, just can limit the electric current of seepage when passing through shunting defect area (or pin hole) in the thin film silicon i layer well.
Different with traditional photovoltaic device that can only positive sensitization, the photovoltaic module of Clairvoyant type has the performance of " two-sided light sensation " (rayed can both be generated electricity in any one side of photovoltaic module).Light because transparent back side contact layer can allow module " back side " arrives i layer 50 and produces photovoltaic effect.The performance of this two-sided light sensation makes Clairvoyant type amorphous silicon module be more suitable for independent outdoor application and low light level indoor application, the at this moment two-sided light that all touches of photovoltaic module.Yet because the structure of this class device and the basic asymmetry of p-i-n type thin film silicon solar cell, illumination is in the module front when (glass substrate 20), and the generated output during according to (cover glass 110) overleaf is much higher.We find that if amorphous silicon n layer film is normal thickness (being used for opaque template), the light time is touched at the two-sided light sensation photovoltaic module back side of partially transparent, and always the power than (rayed is on top layer glass substrate 20) under the normal condition is low.
We are all thin layers of face ground deposition greatly, thereby directly obtain translucent photovoltaic module.This Clairvoyant type photovoltaic glass window production cost is low, more unified, seems more natural (attractive in appearance), and power output is also than the power height of the partially transparent module of traditional " laser treatment ".And avoided carrying out loaded down with trivial details back deposit film fully and eliminated processing procedure at selection area.This photovoltaic module can be produced by suitable large area film depositing device and program, does not need extra equipment or material.Therefore, our modular design really provides a kind of low cost, simple actual solution for a large amount of photovoltaic that are fit to BIPV of producing.
Claims (6)
1. Clairvoyant type photovoltaic module, this photovoltaic module is made by thin film silicon, and thin film silicon comprises amorphous silicon and nanocrystal silicon, and the i layer thickness of its p-i-n type structure is not more than 350 nanometers, and the most of regional visible light see-through of module is greater than 1%.It is characterized in that: described Clairvoyant type photovoltaic module comprises following few component parts:
A) glass substrate;
B) preceding electric contacting layer, this contact layer is made by transparent conductive oxide, places on the described glass substrate;
C) p layer, this p layer is made by the amorphous silicon alloy that boron doping, broad-band gap, luminous energy band gap are not less than 2.0 electronvolt, and this alloy comprises non-crystal silicon carbon and amorphous silicon oxygen alloy.The p layer thickness is not more than 12 nanometers, places on the described preceding electric contacting layer;
D) intrinsic i layer, this intrinsic i layer is made of hydrogenation thin film silicon or its alloy that contains amorphous silicon and nanocrystal silicon of non-doping, and its thickness is not more than 300 nanometers, is deposited on the described p layer;
E) n layer, this n layer is made by thin film silicon or its alloy of phosphorus doping, comprises amorphous silicon, amorphous silicon oxygen alloy, non-crystal silicon carbon alloy and nanocrystal silicon and alloy thereof.This n layer thickness is not more than 25 nanometers, is deposited on the described intrinsic i layer;
F) transparent back electrode, this back electrode comprise the transparent conductive oxide film that a zinc oxide that is mixed by aluminium is made, and this film thickness is not less than 200 nanometers.This back electrode places on the described n layer.
G) adhesive layer, its light transmittance is not less than 80%, and sealability is arranged, and this adhesive layer is bonded on the described transparent back electrode securely;
H) protective layer, this protective layer is made by glass plate or other transparent material, is bonded in safely on the described adhesive layer.
2. according to claim 1 described Clairvoyant type photovoltaic module, it is characterized in that: this Clairvoyant type photovoltaic module comprises that also contains the dead layer that non-doping or little doped amorphous silicon alloy are made, this alloy luminous energy band gap is greater than 1.9 electronvolt, resistance coefficient is not less than described p layer resistance coefficient, and thickness is between the 5-300 nanometer.Damned being placed between described n layer and the described transparent back electrode.
3. according to claim 1 described Clairvoyant type photovoltaic module, it is characterized in that: this Clairvoyant type photovoltaic module also comprises a plurality of dead layers non-doping and/or that the doped amorphous silicon alloy is made that contain.This amorphous silicon alloy band gap is not less than the amorphous silicon alloy band gap of described n layer, and at least one described dead layer resistance coefficient is greater than the resistance coefficient of described p layer.Described a plurality of dead layer places between described n layer and the described transparent back electrode.
4. according to claim 1 described Clairvoyant type photovoltaic module, it is characterized in that: in this Clairvoyant type photovoltaic module, described intrinsic i layer comprises an amorphous silicon membrane, and this film thickness is less than 160 nanometers.
5. according to claim 3 described Clairvoyant type photovoltaic modules, it is characterized in that: in this Clairvoyant type photovoltaic module, the luminous energy band gap of the non-crystal silicon carbon alloy that described intrinsic i layer comprises is greater than 1.8 electronvolt, and its thickness is less than 120 nanometers.
6. windowpane that comprises the Clairvoyant type photovoltaic module described in the claim 1,2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100025672A CN101236998A (en) | 2007-01-29 | 2007-01-29 | Perspective non-crystal silicon light voltage glass window |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100025672A CN101236998A (en) | 2007-01-29 | 2007-01-29 | Perspective non-crystal silicon light voltage glass window |
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| CN101236998A true CN101236998A (en) | 2008-08-06 |
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| CNA2007100025672A Pending CN101236998A (en) | 2007-01-29 | 2007-01-29 | Perspective non-crystal silicon light voltage glass window |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101908582A (en) * | 2010-06-29 | 2010-12-08 | 通用光伏能源(烟台)有限公司 | Method for manufacturing transparent thin-film solar cell component |
| CN101924153A (en) * | 2010-03-02 | 2010-12-22 | 新奥光伏能源有限公司 | Thin film solar cell and manufacture method thereof |
| CN102479861A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Film solar battery composition structure |
| CN104205619A (en) * | 2012-03-05 | 2014-12-10 | Lg伊诺特有限公司 | Solar cell apparatus |
-
2007
- 2007-01-29 CN CNA2007100025672A patent/CN101236998A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924153A (en) * | 2010-03-02 | 2010-12-22 | 新奥光伏能源有限公司 | Thin film solar cell and manufacture method thereof |
| CN101908582A (en) * | 2010-06-29 | 2010-12-08 | 通用光伏能源(烟台)有限公司 | Method for manufacturing transparent thin-film solar cell component |
| CN102479861A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Film solar battery composition structure |
| CN104205619A (en) * | 2012-03-05 | 2014-12-10 | Lg伊诺特有限公司 | Solar cell apparatus |
| US9716199B2 (en) | 2012-03-05 | 2017-07-25 | Lg Innotek Co., Ltd. | Solar cell apparatus |
| CN104205619B (en) * | 2012-03-05 | 2017-10-20 | Lg伊诺特有限公司 | Solar battery apparatus |
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Open date: 20080806 |