CN101908582A - Method for manufacturing transparent thin-film solar cell component - Google Patents
Method for manufacturing transparent thin-film solar cell component Download PDFInfo
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- CN101908582A CN101908582A CN2010102216286A CN201010221628A CN101908582A CN 101908582 A CN101908582 A CN 101908582A CN 2010102216286 A CN2010102216286 A CN 2010102216286A CN 201010221628 A CN201010221628 A CN 201010221628A CN 101908582 A CN101908582 A CN 101908582A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a transparent thin-film solar cell component. The method comprises a process of manufacturing a transparent substrate, a first electrode layer, a photoelectric translating cell area and a back electrode layer and is characterized in that the back electrode layer is made from a high-permeability and high-conductivity transparent conducting film, wherein the conducting film consists of a first layer of transparent conducting sull, a metal film and a second layer of transparent conducting sull, which are sequentially deposited on the photoelectric translating cell area. The thickness of the metal film is only 5 to 30nm, so the metal film has good light transmittance. Compared with the prior art, the method has the advantages of simple manufacturing process, low cost of raw materials and good light transmittance, is suitable for mass production and has very wide market prospect.
Description
Technical field
The present invention relates to a kind of manufacture method of Thinfilm solar cell assembly, the manufacture method of the Thinfilm solar cell assembly that particularly relate to a kind of light-transmission type, can use as BIPV use and agricultural greenhouse.
Background technology
At present, film class solar cell adopts thicker metal level as back-contact electrode usually, and the height reflection because of metal level can make the light that is not absorbed by the opto-electronic conversion cell area incide this layer once more, thereby improves solar battery efficiency.But the battery of this structure does not see through light, can't use as BIPV and agricultural greenhouse ceiling.At present, existing correlation technique report about the translucent thin-film solar battery, its structure generally comprises transparency carrier, transparency conducting layer, backplate and the opto-electronic conversion battery area between transparency conducting layer and backplate, backplate all is to adopt metal film, thickness of metal film is generally 100～250nm, the metal film of this thickness intercepts fully to light, want to reach the effect of printing opacity, need adopt the mode of laser cutting to remove the part back electrode again, but this kind way is all and is adopting on the thicker metal back electrode basis, increase operation in addition and remove the part metals layer, this type of manufacture method is complicated on the one hand preparation section causes raw-material waste on the other hand.
Summary of the invention
The objective of the invention is to want to overcome above-mentioned the deficiencies in the prior art, a kind of manufacture method of improved Thinfilm solar cell assembly is provided, not only translucent effect is good to adopt the Thinfilm solar cell assembly that this method makes, and it is simple to make flow process, can save raw material.
For realizing that the technical scheme that above-mentioned purpose of the present invention adopts is: a kind of manufacture method of transparent thin-film solar cell component, comprise and make transparency carrier, first electrode layer, opto-electronic conversion battery area and backplate layer operation, it is characterized in that described backplate layer employing height sees through, the electrically conducting transparent film production of high conductivity, this nesa coating is to be made by the ground floor transparent conductive oxide film, metal film and the second layer transparent conductive oxide film that are deposited in turn on the opto-electronic conversion battery area.
Nesa coating is to adopt magnetically controlled DC sputtering technology that ground floor transparent conductive oxide film, metal film and second layer transparent conductive oxide film are deposited on the opto-electronic conversion battery area in turn.
Adopt the method for magnetically controlled DC sputtering technology to be: at first to carry out the deposition of ground floor transparent conductive oxide film, sputtering chamber is evacuated to base vacuum degree 3 * 10
-3～3 * 10
-4Pa charges into O
2/ (Ar+O
2) mist of flow-rate ratio 0～0.01, gas pressure intensity is controlled at 0.1～1Pa, and base reservoir temperature is controlled in the scope of room temperature～200 ℃, adopts the sputtering power of 1～5kW to carry out depositing of thin film; Carry out the deposition of metal film then, the gas that charges into during preparation is pure argon gas, and gas pressure intensity is controlled at 0.1～1Pa, and the sputtering power of employing 0.5～5kW carries out the deposition of metallic film; Then deposit second layer transparent conductive oxide film after the metal film preparation is finished, it adopts the preparation condition identical with the ground floor transparent conductive oxide film.
Described transparent conductive oxide film can adopt at least a in the sulls such as indium sesquioxide (In2O3) base film, tin ash (SnO2) base film, zinc oxide (SnO2) base film.Described metal film can be selected at least a in the conducting metals such as silver, aluminium, copper or yellow gold.
Described ground floor transparent conductive oxide film, metal film, second layer transparent conductive oxide film are deposited on the opto-electronic conversion battery area in turn, form the layer structure of ground floor transparent conductive oxide film/metal film/second layer transparent conductive oxide film, wherein, the thickness of ground floor transparent conductive oxide film is between 20～300nm; The thickness of second layer transparent conductive oxide film is between 20～300nm; The thickness of metal film is between 5～30nm.
Also scribble one deck encapsulant on the aspect of electrode layer overleaf, carry out lamination with the sealing backside plate then.
Described encapsulant is selected at least a of polyvinyl butyral resin material (PVB) or ethylene-vinyl acetate copolymer material (EVA) for use; Described sealing backside plate can adopt glass back plate.
The present invention is owing to adopted electrically conducting transparent film production backplate layer, and nesa coating is made by two layers of transparent conductive oxide film and layer of metal film, the thickness of its metal film is between 5-30nm, be significantly less than metal film of the prior art (100～250nm) thickness, the metal film of this thickness has light transmission preferably, can reach the printing opacity requirement of translucent thin-film battery fully.Therefore the mode of having saved the available technology adopting laser cutting is removed the operation of part back electrode metal film, has saved cost of material.The present invention compared with prior art, advantage such as it is simple to have a manufacture technology, and cost of material is low, and translucent effect is good is suitable for large tracts of land production, has very vast market prospect.
Description of drawings
Fig. 1 has provided the structural representation of a kind of specific embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done further detailed description, yet described embodiment should not explain in the mode of restriction.
From the embodiment that Fig. 1 provides as can be seen, the transparent thin-film solar cell component that adopts method of the present invention to make comprises transparency carrier 1, first electrode layer 2, opto-electronic conversion battery area 13 and backplate layer 14, wherein, first electrode layer 2 is configured on the transparency carrier 1, opto-electronic conversion battery area 13 is configured in first electrode layer, 2 tops, backplate layer 14 is configured in the top of opto-electronic conversion battery area 13, and three grooves 3,7,11 and are parallel to each other all on the Y direction;
Groove 3 is separated first electrode layer 2, on the interface of first electrode layer 2 and opto-electronic conversion battery area 13, has opening, and as the bottom surface, groove 3 is added by opto-electronic conversion battery area 13 (silicon based thin film) and buries, with adjacent first electrode layer, 2 mutually insulateds with the surface of transparency carrier 1;
Groove 11 is cut apart photoelectric conversion layer 13 and backplate layer 14, has opening on the interface of electrode layer 14 overleaf, and with the surface of first electrode layer 2 as the bottom surface;
Groove 7 is located between groove 3 and the groove 11, cuts apart opto-electronic conversion battery area 13, has opening on the interface of opto-electronic conversion battery area 13 and backplate layer 14, and with the surface of first electrode layer 2 as the bottom surface, this groove 7 is added by 14 on backplate layer and buries;
Opto-electronic conversion battery area 13 is to stack the structure that forms p-i-n by p N-type semiconductor N, intrinsic semiconductor i, n N-type semiconductor N, dorsum electrode layer 14 nesa coating of high conductivity (high see through) then is made of for 10 3 layers ground floor transparent conductive oxide film 8, metal film 9, second layer transparent conductive oxide film, and the thickness of trilamellar membrane is respectively 20～300nm, 5～30nm, 20～300nm;
Scribble one deck encapsulant 12 on the aspect of electrode layer 14 overleaf, carry out laminating seal, form the good transparent thin-film solar cell component of reliability with sealing backside plate 15.
Concrete manufacture method is as follows:
At first, on transparency carrier 1, adopt itself known vapour deposition such as vapour deposition method, CVD (Chemical Vapor Deposition) method or sputtering method to form first electrode layer 2, thicknesses of layers is 500～1000nm, or direct employing had deposited the glass of transparent conductive oxide film, then, adopt the laser scribing mode to remove part first electrode layer, to form the groove 3 that first electrode layer can be separated into many articles the one Y direction openings of a plurality of band electrode materials, groove width 30～60 μ m;
Then, adopt for example plasma reinforced chemical vapour deposition technology, utilize diborane, methane, silane, phosphine, hydrogen etc. with the order of p type, i type, n type deposit at least amorphous silicon with and/or polysilicon, form as shown in Figure 1 opto-electronic conversion cell area p layer 4, i layer 5 and n layer 6, cover the groove 3 of first electrode layer and a Y direction opening.Adopt the laser scribing mode to remove part opto-electronic conversion battery area 13, to form the groove 7 of many articles the 2nd Y direction openings of opposing parallel the one Y direction open groove 3, groove width 30～60 μ m in the top of first electrode layer 2;
Afterwards, adopt for example magnetically controlled DC sputtering technology, the ground floor transparent conductive oxide film 8 that deposits backplate layer 14 nesa coating of high conductivity (high see through) in turn is doped zinc oxide gallium layer, metal film 9 silver layer, second layer transparent conductive oxide film 10 doped zinc oxide gallium layer for example for example for example.Wherein, the preparation of first, second layer transparent conductive oxide film of dorsum electrode layer 14 employing base vacuum degree is 3 * 10
-3～3 * 10
-4Pa charges into O
2/ (Ar+O
2) mist of flow-rate ratio 0～0.01, gas pressure intensity is controlled at 0.1～1Pa, and base reservoir temperature is controlled in the scope of room temperature～200 ℃, adopts the sputtering power of 1～5kW; The sputtering power of metal film is 0.5～5kW, uses pure argon, gas pressure intensity to be controlled in 0.1～1.0Pa scope in the sputter procedure; Three layers aggregate thickness is about 45～630nm after the sputter, and wherein, the thickness of ground floor transparent conductive oxide film is 20～300nm, and the thickness of second layer transparent conductive oxide film is 20～300nm, and the thickness of metallic diaphragm is 5～30nm nm.Backplate layer 14 covers the groove 7 of opto-electronic conversion battery area 13 and the 2nd Y direction opening.Adopt the laser scribing mode to remove part backplate layer 14 and part opto-electronic conversion battery area 13, expose the groove 11 of many articles the 3rd Y direction openings of first electrode surface, groove width 30～60 μ m with formation;
At last, be coated with one deck encapsulant 12 on the aspect of electrode layer 14 overleaf, carry out lamination as glass back plate, thereby form the good transparent thin-film solar cell component of reliability with sealing backside plate 15.Sealing laminated material 12 can be selected polyvinyl butyral resin material (PVB) or ethylene-vinyl acetate copolymer material (EVA) etc. for use.
The present invention also can adopt for example doped zinc oxide gallium layer, metal film 9 silver layer, second layer transparent conductive oxide film 10 doped zinc oxide gallium layer for example for example of ground floor transparent conductive oxide film 8 that vapour deposition method deposits backplate layer 14 in turn, known clearly by the those of ordinary skill in this area because of its process and to be known, no longer introduced here.
The present invention can draw terminals by disclosed any conventional method in the prior art, connects terminal box.
Described transparency carrier 1 can adopt glass or perspex substrate.
Described first electrode layer 2 is an including transparent conducting oxide layer, can adopt at least a of transparent conductive oxide film materials such as indium sesquioxide (In2O3) base film, tin ash (SnO2) base film, zinc oxide (SnO2) base film.First electrode layer 2 can be an individual layer, also can be sandwich construction.
The opto-electronic conversion battery area can adopt single layer structure or stack of layers structure, and the material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material etc.
In a word, backplate of the present invention adopts height to see through, the nesa coating of high conductivity, also promptly adopt the ground floor transparent conductive oxide film, metal film, three layers of manufacture method that is deposited in turn on the opto-electronic conversion battery area of second layer transparent conductive oxide film, be adapted at using in the processing backplate in existing disclosed any transparent thin-film solar cell component, also be, the backplate of any transparent thin-film solar cell component adopts manufacture method of the present invention, it is good to make its battery component reach light transmission on original basis, and technology is simple, the purpose of cost economizes in raw materials.
For example CVD (Chemical Vapor Deposition) method, laser scribing etc. of various process of the present invention, the those of ordinary skill that is all in this area is known, introduces no longer in detail here.
The present invention can use on the original process basis, both can reduce the use cost of raw material, can realize again the effect of battery component printing opacity.
Claims (9)
1. the manufacture method of a transparent thin-film solar cell component, comprise and make transparency carrier (1), first electrode layer (2), opto-electronic conversion battery area (13) and backplate layer (14) operation, it is characterized in that described backplate layer employing height sees through, the electrically conducting transparent film production of high conductivity, this nesa coating is to be made by the ground floor transparent conductive oxide film (8), metal film (9) and the second layer transparent conductive oxide film (10) that are deposited in turn on the opto-electronic conversion battery area.
2. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 1, it is characterized in that being coated with one deck encapsulant (12) on the aspect of electrode layer (14) overleaf, use sealing backside plate (15) to carry out lamination then.
3. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 2, it is characterized in that described encapsulant (12) selects at least a of polyvinyl butyral resin material (PVB) or ethylene-vinyl acetate copolymer material (EVA) for use; Described sealing backside plate (15) adopts glass back plate.
4. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 1, it is characterized in that described first electrode layer (2) is a transparent conductive oxide.
5. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 1, it is characterized in that described nesa coating adopts magnetically controlled DC sputtering technology respectively ground floor transparent conductive oxide film, metal film and second layer transparent conductive oxide film to be deposited on the opto-electronic conversion battery area in turn.
6. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 5, it is characterized in that: the preparation process condition of described magnetically controlled DC sputtering technology is as follows:
(1) the base vacuum degree 3 * 10
-3～3 * 10
-4Pa;
(2) operating air pressure 0.1～1Pa;
(3) sputtering power 1～5kW;
(4) base reservoir temperature is room temperature～200 ℃;
(5) O
2/ (Ar+O
2) flow-rate ratio 0～0.01.
7. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 1, it is characterized in that described transparent conductive oxide film adopts indium sesquioxide to mix tin, tin ash and mixes at least a of fluorine, doped zinc oxide aluminium (or mixing gallium, boron), zinc oxide metal oxide; Described metal film adopts at least a of silver, aluminium, copper or yellow gold conducting metal.
8. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 4, it is characterized in that described transparent conductive oxide film adopts indium sesquioxide to mix tin, tin ash and mixes at least a of fluorine, doped zinc oxide aluminium (or mixing gallium, boron), zinc oxide metal oxide.
9. according to the manufacture method of the described a kind of transparent thin-film solar cell component of claim 1, the ground floor transparent conductive oxide film (8) that it is characterized in that described nesa coating, metal film (9), second layer transparent conductive oxide film (10) is deposited on the opto-electronic conversion battery area (13) in turn, form the layer structure of transparent conductive oxide film (8)/metal film (9)/transparent conductive oxide film (10), wherein, the thickness of ground floor transparent conductive oxide film is between 20～300nm, the thickness of second layer transparent conductive oxide film is between 20～300nm, and the thickness of metal film is between 5～30nm.
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Cited By (11)
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| CN102304735A (en) * | 2011-08-25 | 2012-01-04 | 西北工业大学 | Silver-copper bimetallic thin film for light anode and laser-induced membrane-changing method |
| CN102544126A (en) * | 2010-12-14 | 2012-07-04 | 三菱综合材料株式会社 | Back electrode strap for thin film solar cell and producing method of thin film solar cell |
| CN102899628A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN102899630A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtained by the method |
| CN102899629A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN104103703A (en) * | 2014-06-23 | 2014-10-15 | 深圳先进技术研究院 | Thin-film solar cell module and preparation method thereof |
| CN104916709A (en) * | 2015-05-29 | 2015-09-16 | 中山大学 | Solar battery with structure of oxide-metal multilayer film/silicon substrate |
| CN105070770A (en) * | 2015-07-10 | 2015-11-18 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN105140311A (en) * | 2015-07-10 | 2015-12-09 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
| CN117423754A (en) * | 2023-12-19 | 2024-01-19 | 天合光能股份有限公司 | Heterojunction battery, manufacturing method thereof, photovoltaic module and photovoltaic system |
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| CN102544126A (en) * | 2010-12-14 | 2012-07-04 | 三菱综合材料株式会社 | Back electrode strap for thin film solar cell and producing method of thin film solar cell |
| CN102544126B (en) * | 2010-12-14 | 2016-03-23 | 三菱综合材料株式会社 | Thin-film solar cells back electrode strap and thin-film solar cells manufacture method |
| US9243320B2 (en) | 2011-07-29 | 2016-01-26 | Nitto Denko Corporation | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN102899628A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN102899630A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtained by the method |
| CN102899629A (en) * | 2011-07-29 | 2013-01-30 | 日东电工株式会社 | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN102899630B (en) * | 2011-07-29 | 2017-03-01 | 日东电工株式会社 | Double-face vacuum film build method and the laminate being obtained using the method |
| CN102899628B (en) * | 2011-07-29 | 2016-05-25 | 日东电工株式会社 | Double-face vacuum film build method and the laminate that utilizes the method to obtain |
| US9297066B2 (en) | 2011-07-29 | 2016-03-29 | Nitto Denko Corporation | Method for double-side vacuum film formation and laminate obtainable by the method |
| US9249503B2 (en) | 2011-07-29 | 2016-02-02 | Nitto Denko Corporation | Method for double-side vacuum film formation and laminate obtainable by the method |
| CN102304735B (en) * | 2011-08-25 | 2014-02-05 | 西北工业大学 | Silver-copper bimetallic thin film for light anode and laser-induced membrane-changing method |
| CN102304735A (en) * | 2011-08-25 | 2012-01-04 | 西北工业大学 | Silver-copper bimetallic thin film for light anode and laser-induced membrane-changing method |
| CN104103703A (en) * | 2014-06-23 | 2014-10-15 | 深圳先进技术研究院 | Thin-film solar cell module and preparation method thereof |
| CN104103703B (en) * | 2014-06-23 | 2016-06-01 | 深圳先进技术研究院 | Thin-film solar cells module and its preparation method |
| CN104916709A (en) * | 2015-05-29 | 2015-09-16 | 中山大学 | Solar battery with structure of oxide-metal multilayer film/silicon substrate |
| CN105140311A (en) * | 2015-07-10 | 2015-12-09 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN105070770A (en) * | 2015-07-10 | 2015-11-18 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
| CN117423754A (en) * | 2023-12-19 | 2024-01-19 | 天合光能股份有限公司 | Heterojunction battery, manufacturing method thereof, photovoltaic module and photovoltaic system |
| CN117423754B (en) * | 2023-12-19 | 2024-04-23 | 天合光能股份有限公司 | Heterojunction battery, manufacturing method thereof, photovoltaic module and photovoltaic system |
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Open date: 20101208 |