CN101231973A - 显示装置及其制造方法 - Google Patents
显示装置及其制造方法 Download PDFInfo
- Publication number
- CN101231973A CN101231973A CNA2008100039754A CN200810003975A CN101231973A CN 101231973 A CN101231973 A CN 101231973A CN A2008100039754 A CNA2008100039754 A CN A2008100039754A CN 200810003975 A CN200810003975 A CN 200810003975A CN 101231973 A CN101231973 A CN 101231973A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- electrode
- joint portion
- semiconductor layer
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 85
- 239000004020 conductor Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 57
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 54
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007012114 | 2007-01-23 | ||
JP2007012114A JP2008181907A (ja) | 2007-01-23 | 2007-01-23 | 表示装置およびその製造方法 |
JP2007-012114 | 2007-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101231973A true CN101231973A (zh) | 2008-07-30 |
CN101231973B CN101231973B (zh) | 2010-06-23 |
Family
ID=39640357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100039754A Active CN101231973B (zh) | 2007-01-23 | 2008-01-23 | 显示装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7829395B2 (zh) |
JP (1) | JP2008181907A (zh) |
CN (1) | CN101231973B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103824863A (zh) * | 2012-11-19 | 2014-05-28 | 乐金显示有限公司 | 薄膜晶体管基板 |
CN105051908A (zh) * | 2013-03-22 | 2015-11-11 | 凸版印刷株式会社 | 薄膜晶体管阵列 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012093901A2 (en) | 2011-01-07 | 2012-07-12 | Samsung Electronics Co., Ltd. | Method and apparatus for communicating ism prone frequency information to a base station |
CN205789971U (zh) * | 2016-05-16 | 2016-12-07 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及应用其的显示装置 |
CN111081718B (zh) * | 2019-12-11 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | 一种tft阵列基板和显示面板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03233431A (ja) | 1990-02-09 | 1991-10-17 | Hitachi Ltd | 液晶ディスプレイパネル |
JP3415602B2 (ja) | 2000-06-26 | 2003-06-09 | 鹿児島日本電気株式会社 | パターン形成方法 |
KR100918180B1 (ko) * | 2003-03-04 | 2009-09-22 | 삼성전자주식회사 | 쉬프트 레지스터 |
-
2007
- 2007-01-23 JP JP2007012114A patent/JP2008181907A/ja active Pending
-
2008
- 2008-01-22 US US12/017,384 patent/US7829395B2/en active Active
- 2008-01-23 CN CN2008100039754A patent/CN101231973B/zh active Active
-
2010
- 2010-09-14 US US12/881,560 patent/US8089575B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103824863A (zh) * | 2012-11-19 | 2014-05-28 | 乐金显示有限公司 | 薄膜晶体管基板 |
CN103824863B (zh) * | 2012-11-19 | 2016-09-07 | 乐金显示有限公司 | 薄膜晶体管基板 |
CN105051908A (zh) * | 2013-03-22 | 2015-11-11 | 凸版印刷株式会社 | 薄膜晶体管阵列 |
Also Published As
Publication number | Publication date |
---|---|
US20100327287A1 (en) | 2010-12-30 |
US7829395B2 (en) | 2010-11-09 |
US8089575B2 (en) | 2012-01-03 |
CN101231973B (zh) | 2010-06-23 |
US20080173873A1 (en) | 2008-07-24 |
JP2008181907A (ja) | 2008-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Co-patentee before: IPS Alpha Technology, Ltd. Patentee before: Hitachi Displays, Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: JAPAN DISPLAY, INC. Free format text: FORMER NAME: APAN DISPLAY EAST, INC. Owner name: APAN DISPLAY EAST, INC. Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: Japan Display East Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
|
CP03 | Change of name, title or address |
Address after: Tokyo port xixinqiao Japan three chome 7 No. 1 Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Japan Display East Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080730 Assignee: BOE TECHNOLOGY GROUP Co.,Ltd. Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd. Contract record no.: 2013990000688 Denomination of invention: Ion illuminating display device and mfg. method Granted publication date: 20100623 License type: Common License Record date: 20131016 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231204 Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA Address before: Tokyo port xixinqiao Japan three chome 7 No. 1 Patentee before: JAPAN DISPLAY Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |