CN101228646A - 制造电元件的方法 - Google Patents

制造电元件的方法 Download PDF

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Publication number
CN101228646A
CN101228646A CNA2006800271859A CN200680027185A CN101228646A CN 101228646 A CN101228646 A CN 101228646A CN A2006800271859 A CNA2006800271859 A CN A2006800271859A CN 200680027185 A CN200680027185 A CN 200680027185A CN 101228646 A CN101228646 A CN 101228646A
Authority
CN
China
Prior art keywords
self
electrode
contact layer
assembly systems
monolayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800271859A
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English (en)
Chinese (zh)
Inventor
H·B·阿克曼
B·德布尔
P·W·M·布洛姆
D·M·德里兀
T·C·T·戈恩斯
E·坎塔托雷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN101228646A publication Critical patent/CN101228646A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Thin Film Transistor (AREA)
CNA2006800271859A 2005-07-27 2006-07-21 制造电元件的方法 Pending CN101228646A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05106926 2005-07-27
EP05106926.8 2005-07-27

Publications (1)

Publication Number Publication Date
CN101228646A true CN101228646A (zh) 2008-07-23

Family

ID=37450775

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800271859A Pending CN101228646A (zh) 2005-07-27 2006-07-21 制造电元件的方法

Country Status (7)

Country Link
US (1) US20080203384A1 (enExample)
EP (1) EP1911109A1 (enExample)
JP (1) JP2009503838A (enExample)
KR (1) KR20080032119A (enExample)
CN (1) CN101228646A (enExample)
TW (1) TW200742140A (enExample)
WO (1) WO2007013015A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102802346A (zh) * 2011-05-27 2012-11-28 中国科学院理化技术研究所 一种液态金属印刷电路板及其制备方法
CN104781642A (zh) * 2012-11-02 2015-07-15 诺基亚技术有限公司 用于感测压力的装置和装配该装置的方法
CN109075187A (zh) * 2015-05-04 2018-12-21 薄膜电子有限公司 用于无线通信设备的基于moscap的电路及其制造和使用方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046720B1 (ko) * 2008-06-30 2011-07-05 주식회사 하이닉스반도체 분자 전자 소자 및 그 제조 방법
EP2144310A1 (en) * 2008-07-10 2010-01-13 Koninklijke Philips Electronics N.V. Light emitting device
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
KR20150112018A (ko) 2013-01-28 2015-10-06 메사추세츠 인스티튜트 오브 테크놀로지 전기기계 디바이스
US9412806B2 (en) * 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
KR102227004B1 (ko) * 2018-07-18 2021-03-12 고려대학교 산학협력단 터널링 전류의 디콘볼루션 특성을 갖는 혼성 자기조립 단층 및 이를 포함하는 분자전자소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0130485D0 (en) * 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
JP4974263B2 (ja) * 2002-05-20 2012-07-11 富士通株式会社 半導体装置の製造方法
GB0309355D0 (en) * 2003-04-24 2003-06-04 Univ Cambridge Tech Organic electronic devices incorporating semiconducting polymer
JP4208668B2 (ja) * 2003-08-22 2009-01-14 富士通株式会社 半導体装置およびその製造方法
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102802346A (zh) * 2011-05-27 2012-11-28 中国科学院理化技术研究所 一种液态金属印刷电路板及其制备方法
CN102802346B (zh) * 2011-05-27 2015-08-05 中国科学院理化技术研究所 一种液态金属印刷电路板及其制备方法
CN104781642A (zh) * 2012-11-02 2015-07-15 诺基亚技术有限公司 用于感测压力的装置和装配该装置的方法
US9380979B2 (en) 2012-11-02 2016-07-05 Nokia Technologies Oy Apparatus and method of assembling an apparatus for sensing pressure
CN109075187A (zh) * 2015-05-04 2018-12-21 薄膜电子有限公司 用于无线通信设备的基于moscap的电路及其制造和使用方法

Also Published As

Publication number Publication date
JP2009503838A (ja) 2009-01-29
KR20080032119A (ko) 2008-04-14
TW200742140A (en) 2007-11-01
WO2007013015A1 (en) 2007-02-01
US20080203384A1 (en) 2008-08-28
EP1911109A1 (en) 2008-04-16

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Open date: 20080723