CN101226944A - 能够避免开口减小的薄膜晶体管基板 - Google Patents
能够避免开口减小的薄膜晶体管基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 claims description 80
- 239000010408 film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 abstract description 8
- 239000003990 capacitor Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 zone Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract
本发明提供一种薄膜晶体管基板,能够提供广视角和高对比度而不减小开口率。例如,该TFT基板可以,用于图案化的垂直排列模式LCD。TFT基板包括在不平行的方向上延伸的栅极线和数据线以及在像素区域内形成的像素电极。像素区域具有通过反射区域彼此分开的两个透射区域,并且至少一条栅极线在反射区域内形成。存储电容也可在反射区域内形成。这一结构避免了在两个透射区域之间使用桥接区域,这是造成传统结构中开口率减小的原因。
Description
技术领域
本发明涉及一种液晶显示器,更具体地涉及一种透反式(transflective)液晶显示器,其能够通过在像素区域中心处形成反射区域而减小透射区域的开口(aperture)损失。
背景技术
液晶显示器(LCD)包括其上形成有像素电极的薄膜晶体管(TFT)基板,其上形成有公共电极的滤色器基板,以及夹在这两个基板之间的液晶层。LCD通过控制液晶分子的排列显示图像,这是通过对像素电极和公共电极施加电压进行的。通过LC分子的排列调节透过液晶层的光量。
由于LCD不是自发光的,所以从外部提供光以形成图像。按照光源类型,LCD分为透射型、反射型和透反型。透射式LCD采用位于LCD面板后的背光来显示图像,反射式LCD采用周围环境光来显示图像。作为透射式和反射式LCD的组合的透反式LCD,当周围环境光的光量不足以显示具有所期望质量和亮度的图像时,以采用集成到LCD装置中的背光单元显示图像的透射模式工作。但是,透反式LCD,当有足够的周围环境光时,以反射模式工作。透反式LCD用于中小型LCD。在透反式LCD中,像素区域的一部分限定透射区域,像素区域的其它部分限定反射区域。
由于能达到高对比度和宽视角,垂直排列模式LCD受到了相当的关注,其中没有电场时液晶分子的主轴相对TFT和滤色器基板垂直排列。为了在垂直排列模式LCD中实现宽视角,存在在电极上形成切除图案或凸出的方法。按照该方法,形成了边缘电场且液晶倾斜的方向是均匀分布的,因此保证了宽视角。特别是,其中在电极上形成切除图案的PVA(图案化的垂直排列)模式,被认为是可取代IPS(平面内切换,In Plane Switching)模式的宽视角技术。
在组合了透反式和PVA模式,用于诸如移动电话的中小型产品中的透反式PVA LCD中,透射区域形成于像素区域中限定在栅极线和数据线的交叉区域的部分,反射区域形成在像素区域的其它部分,并且在透射区域内形成切除图案。在用于这些中小型产品的透反式PVA LCD中,反射区域形成于其上形成有TFT的像素区域的栅极线侧,并且像素区域的其它部分形成为透射区域。但是,如果透射区域大于反射区域,则由于中小型透反式PVA LCD的特性,透射区域不能以单一区域形成。所以,透射区域分为两个区域。为了通过将透射区域分为两个区域以便以PVA模式运行LCD,分开的区域在空间上彼此分离。由于被分开的区域之间的距离减小了开口率(apertureratio),该结构可能是有问题的。此外,两个区域是桥接的,且在桥接区域中液晶是不规则排列的,因此在桥接区域没有图像显示。这种桥接区域中的开口率减小是不期望的。
发明内容
本发明是为了解决现有技术中的前述问题而构思的。因此,本发明提供了一种能够提高开口率的薄膜晶体管(TFT)基板,制造该基板的方法以及具有该基板的液晶显示器(LCD)。
本发明目的是提供一种TFT基板,制造该基板的方法和具有该基板的LCD,该基板中在像素区域的中心部分形成反射区域,并且透射区域相对于反射区域对称地形成以去除透射区域中的桥接,由此减小透射区域的开口损失。
本发明目的是提供一种TFT基板,制造该基板的方法和具有该基板的LCD,该基板能够通过将栅极线和存储线设置在形成于像素区域的中心部分的反射区域内而提高开口率。
在一方面,本发明包括一种TFT基板,该TFT基板包括在绝缘基板上在第一方向上延伸的多条栅极线;在不平行于第一方向的第二方向上延伸的多条数据线;以及在数据线之间的像素区域内形成的像素电极。像素电极具有通过反射区域彼此分开的透射区域,并且至少一条栅极线在反射区域内形成。
另一方面,本发明是一种TFT基板的制造方法,包括通过在基板上形成半导体层以及图案化该半导体层形成有源层和第一电极图案;通过在基板上形成栅极绝缘膜和第一导电层以及图案化该第一导电层形成栅极线和第二电极图案;在基板上形成第一保护膜,形成经过第一保护膜延伸到有源层的第一接触孔;通过在基板上形成第二导电层以及图案化该第二导电层,形成通过第一接触孔连接到有源层的部分的数据线;形成经过第二保护膜延伸到有源层的第二接触孔;通过在基板上形成第三导电层以及图案化该第三导电层,形成通过第二接触孔连接到有源层的部分的像素电极;以及在像素电极上形成反射膜。
在还有另一方面,本发明是一种液晶显示器,包括上述TFT基板、滤色器基板、以及夹在TFT基板和滤色器基板之间的液晶层。滤色器基板包括第二绝缘基板,该第二绝缘基板具有当滤色器基板与TFT基板对齐时不与像素区域重叠的第一区域,以及当滤色器基板与TFT基板对齐时与像素区域重叠的第二区域,在第一区域内形成黑矩阵,在第二区域内形成滤色器,并且在第二绝缘基板上形成公共电极。
附图说明
由结合附图给出的优选实施例的下列描述,本发明的上述及其它目的、特性以及优点将变得明显,其中:
图1是根据本发明的液晶显示器的平面图;
图2是沿图1中I-I’线的截面图;
图3是沿图1中II-II’线的截面图;以及
图4A至图8C是依序示例说明了按照本发明的薄膜晶体管基板的制造方法的平面图和截面图。
具体实施方式
在下文中,将参考附图详细地描述本发明的优选实施例。然而,本发明不局限于实施例且可以表现为不同的形式。提供这些实施例仅是为了说明的目的以及为了本领域技术人员全面理解本发明的范围。
在附图中,为了清楚对层的厚度和区域进行了夸大,且整个说明书和附图中使用了同样的附图标记来指示同样的部件。而且,将诸如层、区域、基板或板的部件设置在其它部件上或上方的表达不仅包括第一部件直接设置在第二部件上或第一部件就设置在第二部件之上的情况,而且也包括在第一部件和第二部件之间夹有第三部件的情况。
图1是显示根据本发明的透反式PVA液晶显示器(LCD)的像素区域的平面图,图2是沿图1中I-I’线的截面图,图3是沿图1中II-II’线的截面图。
LCD面板300包括薄膜晶体管(TFT)基板100以及滤色器基板200,具有夹在它们之间的液晶层(未示出)。
TFT基板100包含形成在第一绝缘基板111上的有源层110,形成为与有源层110的部分连接的第一电极图案115,形成为在一个方向延伸的多条栅极线120,第二电极图案130与栅极线120平行地延伸以与第一电极图案115相重叠,形成为在与栅极线120垂直交叉的方向上延伸的多条数据线140,以及在数据线140之间的像素区域A内形成的像素电极150。如所示的,像素区域A具有三个区域:在透射区域C1和C2之间的反射区域B。也即,反射区域B限定于像素区域A的中心部分,该中心部分包括其中形成了栅极线120和第二电极图案130的区域,在像素区域A没有被反射区域B占用的部分内,透射区域C1和C2相对于反射区域B对称地形成。另外,在反射区域B中形成的像素电极150的表面上形成反射膜170,优选具有比反射区域B内的像素电极150更大的面积。优选在每个透射区域C1和C2的中心部分处的像素电极150中,进一步以圆形形成切除部分180。此处,优选的是使在反射区域B中形成的反射膜170的上表面弯曲以使反射表面延伸。通过像素电极150界定了像素区域A的反射区域B和两个透射区域C1和C2,该像素电极150以预定间隔分割为空间上彼此分开的子电极150C1、150B和150C2。
有源层110形成为从数据线140下的区域延伸至第一电极图案115的区域,这样有源层110部分地与数据线140和栅极线120重叠。而且,有源层110通过第一接触孔190与数据线140连接,并且通过第二接触孔195与像素电极150连接。此外,有源层110由低温多晶硅薄膜构成。通过第一接触孔190与数据线140连接的区域的功能为源极区域110s,通过第二接触孔195与像素电极150连接的区域的功能为漏极区域110d,除了源极与漏极区域110s和110d之外的其它区域的功能为沟道区域110c。这样,将杂质离子注入到将作为低温多晶硅薄膜的源极和漏极区域110s和110d的区域中。而且,经过沟道区域110c顶部的栅极线120的功能为栅极电极。从而,构成了TFT。
功能为存储电容的下电极的第一电极图案115,可形成为矩形形状,并且与低温多晶硅薄膜的有源层110同时形成。而且,第一电极图案115形成为与有源层110的漏极区域110d连接。
栅极线120在第一方向上延伸且彼此之间以预定间隔分开。而且,栅极线120通过栅极绝缘膜117与形成在栅极线下的有源层110绝缘。
第二电极图案130的功能为存储电容的上电极。优选地,第二电极图案130与栅极线120同时形成,且除了将形成第二接触孔195的区域之外,与第一电极图案重叠。第二电极图案130、第一电极图案115以及夹在它们之间的栅极绝缘膜117构成了存储电容。
在包括栅极线120的第一绝缘基板111整个顶部表面上形成第一保护膜135,该保护膜可以由无机材料构成,诸如氮化硅或氧化硅,或者由低介电常数的有机绝缘材料构成。第一保护膜135可形成为具有无机绝缘层和有机绝缘层的双层结构。
通过部分地除去第一保护薄膜135和栅极绝缘薄膜117,使得有源层的源极区域110s处于第一接触孔190的底部,形成第一接触孔190。
数据线140在与栅极线120垂直交叉的方向上延伸,并且数据线140通过第一接触孔190与源极区域110s连接。从而,数据线140的功能也为源极电极。
第二保护膜145在包括数据线140的第一绝缘基板111的整个顶部表面上形成。与第一保护膜135相似,第二保护膜145可由无机材料构成,诸如氮化硅或氧化硅,或者由低介电常数的有机绝缘材料构成。如同在第一保护膜135中,第二保护膜145可形成为具有无机绝缘膜和有机绝缘膜的双层结构。而且,第二保护膜145的上表面优选为在反射区域B内弯曲,并且可在透射区域C1和C2内弯曲。
通过部分地去除第二保护膜145、第一保护膜135和栅极绝缘膜117,使得有源层110的漏极区域110d处于第二接触孔195的底部,形成第二接触孔195。
像素电极150在数据线140之间的像素区域A内形成。像素电极150被分成具有圆角的矩形形状的三个子电极150C1、150B和150C2(统称子电极150)。子电极150C1、150B和150C2分别形成在反射区域B和透射区域C1和C2中。而且,像素电极150通过第二接触孔195与漏极区域110d连接。从而,像素电极150的功能也为漏极电极。同时,像素电极150由诸如ITO(氧化铟锡)或IZO(氧化铟锌)的透明导体构成。分别形成在反射区域B和透射区域C1和C2中的像素电极150的像素子电极150B、150C1和150C2,通过由透明导电材料构成且与像素电极150一起同时形成的连接部160电连接。因为透射区域C1和C2设置为使得反射区域B夹在它们之间,并且像素子电极150B、150C1和150C2形成在各区域中,所以不需要用中间的桥接区域使在透射区域C1和C2内的像素子电极150C1和150C2在空间上彼此分开。从而,有可能防止对应于间隔的距离的开口损失。
反射膜170在反射区域B内像素电极150的表面上形成,并且优选地具有比形成在反射区域B内的像素子电极150B更大的面积。而且,优选的是反射膜170的上表面沿第二保护膜145的弯曲部分弯曲。
另外,作为用于控制液晶方向的区域调节部件的切除部分180,在透射区域C1和C2内的每个像素子电极150C1和150C2上形成。优选地,切除部分180在透射区域C1和C2内的每个像素子电极150C1和150C2的中心部分形成为圆形。这样以便相同地控制像素子电极150C1和150C2内的液晶方向。如上所述,像素子电极150C1和150C2通常具有带圆角的矩形的形状。在一些实施例中,像素子电极150C1和150C2可包括凸出而不是切除部分180。
滤色器基板200包括在第二绝缘基板211上形成的黑矩阵220、滤色器230、覆盖膜240和公共电极250。
形成黑矩阵220以防止光泄漏到像素区域外部的区域并与相邻像素区域光学干扰。因此,沿像素电极150的边界形成黑矩阵220。在TFT基板100的像素区域A中不形成黑矩阵220。更具体地,黑矩阵220形成在对应于TFT基板100的数据线140的区域内,以及对应于像素电极150和相邻像素电极之间的空间的区域内。
滤色器230形成为使得红色、绿色和蓝色滤色器重复,以黑矩阵220作为重复单元之间的边界。滤色器230的功能是对从光源发射的经过液晶层(未示出)的光提供色彩。滤色器230可由光敏有机材料形成。
覆盖膜240形成在滤色器230以及没有被滤色器230覆盖的黑矩阵220的部分上。覆盖膜240用于保护和平坦化滤色器230,可由醛基环氧树脂材料形成。
在覆盖膜240上形成公共电极250。公共电极250由诸如ITO(氧化铟锡)或IZO(氧化铟锌)的透明导电材料形成。可以在公共电极250中形成切除图案(未示出)。公共电极250的切除图案(未示出)作用是与像素电极150的切除部分180一起将液晶层(未示出)分成多个区域。
在下文中,将参考图4至图8描述这样根据本发明配置的LCD的TFT基板的制造方法。
图4A至8A是显示根据本发明制造TFT基板的方法的平面图,图4B、5B、6B、7B和8B分别是沿图4A、5A、6A、7A和8A中的I-I’线的截面图,以及图4C、5C、6C、7C和8C分别是沿图4A、5A、6A、7A和8A中的II-II’线的截面图。
参考图4A至图4C,在透明的第一绝缘基板111上形成半导体层。半导体层由低温多晶硅薄膜形成,该低温多晶硅薄膜是通过形成无定形硅薄膜且在低温使其结晶而形成。此处,SPC(固相结晶化)、ELC(受激准分子激光结晶化)、MIC(金属诱导结晶化)或类似方法广泛用于使无定形硅薄膜结晶为低温多晶硅薄膜。其后,通过使用第一掩膜的光刻和蚀刻工艺将半导体层图案化。半导体层在预定区域图案化为矩形形状且作为具有预定宽度的延伸部分从预定区域延伸。也即,半导体层形成为从以矩形形状图案化的区域,经过将形成栅极线120的区域延伸到将形成数据线140的区域。此处,以矩形形状图案化的半导体层的部分是第一电极图案115,半导体层的延伸部分是其中将形成源极、漏极和沟道区域的有源层110。进一步,将杂质离子注入到有源层110的预定区域,也就是与将形成数据线140的区域重叠的区域以及连接到第一电极图案115的区域。在注入杂质离子后,使用受激准分子激光器或类似物将所注入的杂质离子激活。此处,注入杂质离子的有源层110的区域变为源极和漏极区域110s和110d,其它区域变为沟道区域110c。通过这样的工艺形成有源层110和第一电极图案115。同时,可将杂质离子注入到第一电极图案115中。
参考图5A至图5C,在第一绝缘基板111之上形成栅极绝缘膜117,第一绝缘基板111上已经形成有源层110,该有源层110具有形成的源极、漏极和沟道区域110s、110d和110c以及第一电极图案115。栅极绝缘膜117例如由诸如氧化硅和氮化硅的硅基绝缘体形成。进一步,第一导电层形成在第一绝缘基板111上。此处,优选第一导电层由Al、Nd、Ag、Cr、Ti、Ta和Mo中的任何一种金属或它们的合金形成。更进一步地,第一导电层不仅可形成为单层结构,也可以形成为具有多个金属层的多层结构。也即,第一导电层可形成为双层结构,该双层结构包括具有较好的物理和化学性质的Cr、Ti、Ta、Mo或类似物的金属层,以及另一个具有低电阻率的基于Al或Ag的金属层。进一步,通过使用第二掩膜的光刻和蚀刻工艺将第一导电层图案化,由此形成栅极线120和第二电极图案130。此处,栅极线120形成为在一个方向上延伸。而且,第二电极图案130形成为与栅极线120分开预定的间隔,并且与第一电极图案115重叠,同时露出漏极区域110d。同时,第二电极图案130和第一电极图案115与夹在第一和第二电极图案115和130之间的栅极绝缘膜117一起构成存储电容。
参考图6A至图6C,在第一绝缘基板111上形成第一保护膜135,第一绝缘基板111上已经形成有栅极线120和第二电极图案130。此处,第一保护膜135可由诸如氮化硅或氧化硅的无机材料形成,并可由具有低介电常数的有机绝缘材料形成。而且,第一保护膜135可形成为无机绝缘层和有机绝缘层的双层结构。通过使用第三掩膜的光刻和蚀刻工艺对第一保护膜135和在其下形成的栅极绝缘膜117进行蚀刻,以形成延伸至有源层110的源极区域110s的第一接触孔190。进一步,在第一绝缘基板111上形成第二导电层。第二导电层由用于形成第一导电层的材料构成。通过使用第四掩膜的光刻和蚀刻工艺将第二导电层图案化以形成数据线140。数据线140在与栅极线120基本垂直的方向上延伸。而且,第二导电层通过第一接触孔190连接到源极区域110s。因此,数据线140的功能也为源极电极。
参考图7A至图7C,在其上形成有数据线140的第一绝缘基板111上形成第二保护膜145。与第一保护膜135相似,第二保护膜145可由诸如氮化硅或氧化硅的无机材料或具有低介电常数的有机绝缘材料形成。第二保护膜145可形成为无机和有机绝缘膜的双层结构。而且,优选反射区域B内的第二保护膜145是弯曲,并且透射区域C1和C2内的第二保护膜145也可以是弯曲的。另外,通过使用第五掩膜的光刻和蚀刻工艺对第二保护膜145、第一保护膜135和栅极绝缘膜117进行蚀刻,以形成延伸至有源层110的漏极区域110d的第二接触孔195。
参考图8A至图8C,在其上形成有第二接触孔195的第一绝缘基板111上形成第三导电层。而且,通过使用第六掩膜的光刻和蚀刻工艺将第三导电层图案化以形成像素电极150。像素电极150形成于限定在数据线140之间的像素区域A内,且形成为以预定间隔与相邻的像素电极隔开。像素区域A包括位于其中心部分处的反射区域B,以及位于反射区域B两侧的透射区域C1和C2,栅极线120和第二电极图案130经过该中心部分。分别形成在反射区域B和透射区域C1和C2中的像素子电极150B、150C1和150C2中的每个都形成为具有圆角的矩形形状。在反射区域B和透射区域C1和C2中形成的像素子电极150B、150C1和150C2通过连接部160电连接。当通过将第四导电层图案化形成像素电极150时形成连接部160。而且,像素电极150通过第二接触孔195连接到漏极区域110d。因此,像素电极150的功能为漏极电极。同时,用于形成像素电极150和连接部160的第四导电层由诸如ITO(氧化铟锡)或IZO(氧化铟锌)的透明导体形成。优选地,当对像素电极150图案化时,在每个透射区域C1和C2中的像素子电极150C1和150C2的中心部分处以圆形形状形成切除部分180。进一步,通过使用第七掩模的光刻和蚀刻工艺在第一绝缘基板111上形成反射膜170,使得反射膜170仅保留在反射区域B内。优选地,反射膜170形成为大于在反射区域B内形成的像素子电极150B。而且,优选的是反射膜170的上表面沿第二保护膜145的弯曲部分弯曲。反射膜170可以是金属的单层或多层结构,所述金属包括具有较高的光反射性的Ag、Al、Au、Nd和Cu的至少任意一种。
滤色器基板200与TFT晶体管基板100分开制造。为了制造滤色器基板200,在第二基板211的预定区域,也就是当两个基板组合时不会与TFT基板100的像素电极150重叠的区域内形成黑矩阵。滤色器230形成为当两个基板组合时与像素电极150重叠。而且,形成覆盖膜240以平坦化黑矩阵220和滤色器230之间的台阶差异。其后,在滤色器基板200上形成公共电极250。
通过将基板设置为使像素电极150和公共电极250尽可能彼此接近,并且将基板压在一起,来结合如上所述制造的TFT和滤色器基板100和200。密封膜可用于结合基板。而且,可提供间隔物以维持两基板之间期望的单元间隙。其后,通过在两基板之间注入液晶并密封基板来制造LCD面板300。
在如上所述制造的LCD面板中,如果形成图像所需要的电信号通过TFT基板100的TFT施加到像素电极150,并且公共电压施加到滤色器基板200的公共电极250,则在像素电极150和公共电极和250之间形成了电场。液晶的取向根据电场改变,透光性依据取向改变以显示所期望的图像。
如上所述,按照本发明,像素区域包括位于两个透射区域之间的反射区域,并且反射区域形成在其中形成栅极线和存储电容的区域中。
因此,形成在两个透射区域中的像素子电极不必彼此分开,如同使用桥接区域连接两个透射区域的现有技术那样。通过避免使用桥接区域,本发明避免了不期望的开口率减小。
而且,反射区域形成在其中形成栅极线和存储电容的区域中,因此可以增加反射区域的面积,且也可以增加像素区域的面积。
本发明的范围不局限于上面描述和示例说明的所述实施例,而是由所附的权利要求确定。显然本领域技术人员可在由权利要求确定的本发明的范围内进行各种改进和变化。因此,本发明真正的范围应该由所附权利要求的技术精神确定。
Claims (12)
1.一种薄膜晶体管基板,包括:
多条栅极线,在绝缘基板上以第一方向延伸;
多条数据线,在不与所述第一方向平行的第二方向上延伸;以及
像素电极,在像素区域内形成,其中所述像素区域形成在所述数据线之间,且具有通过反射区域彼此分开的透射区域,并且其中至少一条所述栅极线形成在所述反射区域内。
2.如权利要求1所述的薄膜晶体管基板,还包括:
第一电极图案,形成在所述基板上;以及
有源层,连接到所述第一电极图案且通过所述栅极线连接到所述数据线。
3.如权利要求2所述的薄膜晶体管基板,其中所述有源层包括:
源极区域,与所述数据线连接;
漏极区域,与所述像素电极连接;以及
沟道区域,位于所述源极区域和漏极区域之间。
4.如权利要求1所述的薄膜晶体管基板,还包括第二电极图案,以预定间隔与所述栅极线分开。
5.如权利要求4所述的薄膜晶体管基板,其中除了所述第一电极图案形成所述有源层的部分之外,所述第二电极图案和所述第一电极图案重叠。
6.如权利要求1所述的薄膜晶体管基板,其中所述像素电极包括分别形成在所述反射区域和透射区域内的像素子电极,每个所述像素子电极具有圆角,所述像素子电极通过连接部彼此连接。
7.如权利要求1所述的薄膜晶体管基板,还包括在所述透射区域内的所述像素电极中的切除部分。
8.如权利要求1所述的薄膜晶体管基板,其中在所述反射区域内的所述像素电极的表面上形成反射膜。
9.一种制造薄膜晶体管基板的方法,包括:
通过在基板上形成半导体层并图案化所述半导体层,形成有源层和第一电极图案;
通过在所述基板上形成栅极绝缘膜和第一导电层并图案化所述第一导电层,形成栅极线和第二电极图案;
在所述基板上形成第一保护膜;
形成经过所述第一保护膜延伸到所述有源层的第一接触孔;
通过在所述基板上形成第二导电层并图案化通过所述第一接触孔连接到所述有源层的所述第二导电层,形成数据线;
在所述基板上形成第二保护膜;
形成经过所述第二保护膜延伸到所述有源层的第二接触孔;
通过在所述基板上形成第三导电层并图案化通过所述第二接触孔连接到所述有源层的部分的所述第三导电层,形成像素电极;以及
在所述像素电极上形成反射膜。
10.如权利要求9所述的方法,其中形成所述第二保护膜包括在其上形成所述反射膜的所述第二保护膜的部分中形成弯曲部分。
11.如权利要求9所述的方法,还包括在所述像素电极内形成切除部分。
12.一种液晶显示器,包括:
薄膜晶体管基板,包括在第一绝缘基板上以第一方向延伸的多条栅极线、在不与所述第一方向平行的第二方向上延伸的多条数据线、以及在所述数据线之间的像素区域中形成的像素电极,所述像素区域包括通过反射区域彼此分开的透射区域,并且其中至少一条所述栅极线形成在所述反射区域内;
滤色器基板,包括:
第二绝缘基板,具有当所述滤色器基板与所述薄膜晶体管基板对齐
时不与所述像素区域重叠的第一区域,以及当所述滤色器基板与所述薄
膜晶体管基板对齐时与所述像素区域重叠的第二区域,
黑矩阵,形成在所述第一区域内,
滤色器,形成在所述第二区域内,以及
公共电极,形成在所述第二绝缘基板上;以及
液晶层,夹置在所述薄膜晶体管基板和所述滤色器基板之间。
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CN103107095A (zh) * | 2013-01-25 | 2013-05-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
CN104269410A (zh) * | 2014-09-03 | 2015-01-07 | 合肥京东方光电科技有限公司 | 一种阵列基板及显示装置 |
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CN102981324B (zh) * | 2012-12-10 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种半透半反蓝相液晶显示面板及液晶显示装置 |
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CN101872587A (zh) * | 2009-04-22 | 2010-10-27 | 佳能株式会社 | 半导体装置 |
CN101872587B (zh) * | 2009-04-22 | 2013-03-20 | 佳能株式会社 | 半导体装置 |
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CN103107095A (zh) * | 2013-01-25 | 2013-05-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
CN104269410A (zh) * | 2014-09-03 | 2015-01-07 | 合肥京东方光电科技有限公司 | 一种阵列基板及显示装置 |
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