CN101211773A - Method for preventing chip back metal peeling - Google Patents
Method for preventing chip back metal peeling Download PDFInfo
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- CN101211773A CN101211773A CNA200610148734XA CN200610148734A CN101211773A CN 101211773 A CN101211773 A CN 101211773A CN A200610148734X A CNA200610148734X A CN A200610148734XA CN 200610148734 A CN200610148734 A CN 200610148734A CN 101211773 A CN101211773 A CN 101211773A
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- corrosive liquid
- chip
- chip back
- corrosion
- back metal
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- 239000002184 metal Substances 0.000 title claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 69
- 230000007797 corrosion Effects 0.000 claims abstract description 58
- 238000005260 corrosion Methods 0.000 claims abstract description 58
- 239000000126 substance Substances 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 25
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 150000002739 metals Chemical class 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 32
- 238000005202 decontamination Methods 0.000 claims description 14
- 230000003588 decontaminative effect Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000010186 staining Methods 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 230000011218 segmentation Effects 0.000 claims description 6
- 239000003518 caustics Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000011946 reduction process Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 10
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
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- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention discloses a method for preventing the metal on the back of a chip from being stripped, which comprises the steps that: the thinning process is applied to the back of the chip adopting a predetermined number of microsections and the damaged silicon layer on the back of the chip is removed using the chemical corrosion solution; the chip is washed using the water so as to remove the residual sully. The method disclosed by the invention can prevent the metal on the back of the chip from being stripped, and can be used for accurately deciding whether the phenomenon of metal stripping exists. The use of the corrosion method effectively removes the damaged silicon layer so as to reduce the mechanical stress. The adoption of the method of controlling the process temperature in the process of evaporization reduces the stress mismatch of the Ti, Ni and Ag three different metals so as to realize solving the problem of the metal stripping on the back of the chip without causing the organic sully.
Description
Technical field
The present invention relates to the method for semiconductor fabrication process chips back face metalization, more particularly, relate to a kind of method that in semiconductor fabrication process, prevents chip back metal peeling.
Background technology
Method at chip back metalization has a lot, and magnetron sputtering and electron beam evaporation are the approach of the most frequently used now back face metalization, and its technology has all obtained extensive use.With magnetically controlled sputter method deposit automaticity height, but throughput is relatively low, is the following desirable process of 0.6 μ m.By comparison, adopt the mode of electron beam evaporation to have following advantage:
1) deposited film purity height, sodium ion pollutes few;
2) because near only gasifying centre of surface of evaporation source do not have the pollution of crucible;
3) integrated operation is simple, and cost is low.Compare with sputtering target material, the mode of deposited by electron beam evaporation can be reduced cost greatly;
4) because electron beam energy can be regulated, and the evaporation rate may command adopts thermally insulating liner can increase evaporation rate greatly simultaneously, improve the silicon chip output capacity. be particularly suitable for thickness greater than the silicon chip back metal depositing technics more than the 1 μ m.
Existing electron beam evaporation equipment (such as CHA Mark50) the manually loading and unloading sheets that adopt more, simultaneously the process cavity of evaporation technology is very big, and every the wheel after technology finishes, and need open process cavity, be vulnerable to various stain and the clean room in steam absorption, the quality of evaporating film is exerted an influence.In addition, because introducing such as equipment fault or maintenance organic stains especially the fatal influence of quality (the particularly adhesiveness of metal film) generation to metal film.
Except staining, stress is also most important for the adhesiveness between metal and substrate silicon and metal and the metal.Usually, in order to improve the contact area between metal level and the substrate silicon, often adopt the roughness (roughness) that increases the silicon chip back side, roughness is big more, the contact area of metal and substrate silicon is also big more, but mechanical damage and stress also can roll up simultaneously, thereby cause fragment rate to rise and the silicon chip distortion.Meanwhile, because silicon chip surface exists a large amount of silicon bits and affected layer behind the abrasive disc, making that the adhesion between the metal film and substrate descends after the deposit produces peeling phenomenon, owing to the existence of stress, As time goes on produce between (normally Ti/Si or Ni/Ag) between the metal film and peel off simultaneously.Metal layer on back peel off be electron beam evaporation deposit back of the body gold thin film the most common also be the most serious failure mode.
So, just need a kind ofly solve the method for chip back metal peeling and can prevent organic staining.
Summary of the invention
The objective of the invention is to be to provide a kind of that solve chip back metal peeling and can prevent organic method that stains.
According to the present invention, a kind of method that prevents chip back metal peeling is provided, comprising: adopt the abrasive disc of a predetermined mill number to carry out the chip back reduction process; Use chemical corrosion liquid to remove the silicon affected layer of chip back; Chip is washed, removed residual staining.
According to one embodiment of the invention, the silicon affected layer of described use chemical corrosion liquid removal chip back comprises the caustic solution of the collocation of using multiple corrosive liquid and multiple etching time.
According to one embodiment of the invention, described number of chemical corrosive liquid comprises: stress is eliminated corrosive liquid KK-8, and contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1; The decontamination corrosive liquid, contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5; Buffer oxide layer corrosive liquid KK-2, contained material and component thereof are: HF: NH
4F is 1: 10.Described multiple etching time comprises: 1 second, 2 seconds and 5 seconds.And the collocation of multiple corrosive liquid of described use and multiple etching time comprises: 1 second stress is eliminated corrosive liquid KK-8 corrosion; 2 seconds stress is eliminated corrosive liquid KK-8 corrosion; 5 seconds decontamination corrosive liquid corrosion; 1 second buffer oxide layer corrosive liquid KK-2 corrosion; 2 seconds buffer oxide layer corrosive liquid KK-2 corrosion; Wherein use each corrosive liquid once to corrode.
Preferable, use 5 washings of the laggard row of chemical corrosion corrosion each time.
According to one embodiment of the invention, in evaporation process, adopt the method for segmentation control technological temperature to reduce Ti, Ni, the stress mismatch of three kinds of different metals of Ag.
According to one embodiment of the invention, the abrasive disc of described predetermined mill number is: the corase grind abrasive disc of the correct grinding abrasive disc or 360 (BG0401) of 2000 (BG1010).
According to one embodiment of the invention, this method also comprises: measure the step of chip back metal bonding force, comprise pad pasting, pad pasting on the metal level overleaf; Chip is severed in scribing; Chip pickup takes off chip from pad pasting, detects iron and is fascinated by whether the metal remained existence is arranged, if metal residual is arranged, illustrates there is back metal peeling that if there is not metal remained to exist, then explanation does not have back metal peeling.
The disclosed method that prevents chip back metal peeling can accurately judge whether to exist the metal peeling phenomenon; Thereby remove the silicon affected layer effectively with corroding method and reduced mechanical stress; Evaporation process adopts the method for segmentation control technological temperature to reduce Ti, Ni, and the stress mismatch of three kinds of different metals of Ag, thus realize effectively solving the problem of chip back metal peeling and can not making organic staining.
Description of drawings
Feature of the present invention, character and advantage will become more obvious by the explanation below in conjunction with drawings and Examples, identical in the accompanying drawings Reference numeral is represented identical feature all the time, wherein,
Fig. 1-Fig. 8 is the method that prevents chip back metal peeling according to of the present invention, adopts different parameters to handle the schematic diagram of the silicon face situation of back chip back;
Fig. 9 is the flow chart according to the method that prevents chip back metal peeling of one embodiment of the invention.
Embodiment
The objective of the invention is in order to improve the bonding force between back metal and the deposit substrate silicon, reduce gold-half contact resistance simultaneously, seek suitable silicon chip surface roughness, reduce mechanical stress and the damage that causes by abrasive disc as far as possible, seek suitable silicon etching process, optimize back of the body gold evaporation technological parameter.
The contact area that at all is to increase metallic film and substrate that bonding force improves is so should adopt the technique for thinning back side of roughly grinding number as much as possible in theory.But in fact, the mill number is thick more, and mechanical damage and gravitation will rise by straight line, cause embedded (inline) to lose the rising of sheet rate, also can cause chip to break and other negative issues when the encapsulation of road, back simultaneously.So need choose suitable mill number
After abrasive disc, need carry out destressing to silicon chip handles, because the accessory substance that traditional silicon chip etching solution produces in course of reaction can be attached to silicon chip surface, be difficult to clean with simple, for example the mode of washing (water rinse) removes, and these attachments can make the bonding force of metal descend greatly.Therefore, also need to seek a kind of suitable silicon caustic solution, can remove the defectives such as stress, damage and silicon bits that abrasive disc causes effectively and simultaneously can not cause new staining.
In practical operation, find, when back metal peeling usually occurs in Chip Packaging, when fixedly pad pasting (tape) picked up (pickup), chip back metals deposited film came off from chip back through the chip after the scribing, remained in fixedly on the pad pasting (tape).
In order to improve whole back of the body gold process effectively, at first must effectively measure carrying on the back golden bonding force.Usually produce and go up the adhesiveness that more employing adhesive tape is measured metal, but this method sensitiveness is very poor, can only detect the very serious problem of peeling off, and can't detect for more common critical conditions such as localized delamination.Method of the present invention provides the detection method of pad pasting-scribing-chip pickup, whether metal residual is arranged on pad pasting (tape) with detection, thereby judges whether the phenomenon of metal peeling, and result of the test shows that this is the method for an effective production monitoring.
For mechanical damage and the mechanical stress that abrasive disc causes, the present invention adopts the method that erodes the certain thickness silicon of silicon chip surface to reduce mechanical stress and removes mechanical damage layer.
In addition, in evaporation process, different metal film Ti, Ni, the young modulus of Ag differs bigger, and the stress between film does not match, and easily causes silicon warp and bonding force to descend.Therefore, the present invention adopts the method for segmentation control technological temperature to reduce stress mismatch as much as possible.
The invention provides a kind of method that prevents chip back metal peeling,, comprise following step with reference to shown in Figure 9:
S100. adopt the abrasive disc of a predetermined mill number to carry out the chip back reduction process.The abrasive disc of wherein predetermined mill number is: the corase grind abrasive disc of the correct grinding abrasive disc or 360 (BG0401) of 2000 (BG1010).
S102. use chemical corrosion liquid to remove the silicon affected layer of chip back.The silicon affected layer that uses chemical corrosion liquid to remove chip back comprises the caustic solution of the collocation of using multiple corrosive liquid and multiple etching time.The number of chemical corrosive liquid that uses comprises: stress is eliminated corrosive liquid KK-8, and contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1; The decontamination corrosive liquid, contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5; Buffer oxide layer corrosive liquid KK-2, contained material and component thereof are: HF: NH4F is 1: 10.The multiple etching time that uses comprises: 1 second, 2 seconds and 5 seconds.Usually, the multiple corrosive liquid of formation and the collocation of multiple etching time comprise: 1 second stress is eliminated corrosive liquid KK-8 corrosion; 2 seconds stress is eliminated corrosive liquid KK-8 corrosion; 5 seconds decontamination corrosive liquid corrosion; 1 second buffer oxide layer corrosive liquid KK-2 corrosion; 2 seconds buffer oxide layer corrosive liquid KK-2 corrosion; Wherein use each corrosive liquid once to corrode.
S104. chip is washed, removed residual staining.Reasonable mode is to use 5 washings of the laggard row of chemical corrosion corrosion each time.
Afterwards, in evaporation process, adopt the method for segmentation control technological temperature to reduce Ti, Ni, the stress mismatch of three kinds of different metals of Ag.
Method of the present invention also provides the step of measuring the chip back metal bonding force, comprises,
Pad pasting, pad pasting on the metal level overleaf;
Chip is severed in scribing;
Chip pickup takes off chip from pad pasting, detects iron and is fascinated by whether the metal remained existence is arranged, if metal residual is arranged, illustrates there is back metal peeling that if there is not metal remained to exist, then explanation does not have back metal peeling.
The step of this mensuration can be used as the detection step after the whole flow process, also can use separately as method for measuring and use.
The following describes one group of example.
Table 1
Table 1 has been listed one group of wafer (Wafer), it is respectively No. 1 to No. 8 wafer (Wafer No.1-8), they will be through the processing of different parameters, observe the situation of chip back surface silicon layer afterwards, because chip is from wafer cutting gained, so the silicon layer situation at the back side of wafer is equal to the silicon layer situation of chip back.
In the above-mentioned form:
On behalf of applied stress, Stress relief (1m) eliminate corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion.
On behalf of applied stress, Stress relief (2m) eliminate corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion.
The decontamination corrosive liquid is used in Stain Removal (5m) representative, and (contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion.
Buffered oxide etch (1m) representative uses buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) to carry out 1 second chemical corrosion.
Buffered oxide etch (2m) representative uses buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) to carry out 2 seconds chemical corrosion.
As previously mentioned, according to the present invention, each chemical corrosion liquid all can be used, and the etching time that just each chemical corrosion liquid experienced is different.As shown in table 1, each wafer all experiences the corrosion of 3 kinds of chemical corrosion liquids, wherein the selected forms of corrosion of " zero " expression.
In addition, selecting the mill number for wafer 1-4 number for use is that the abrasive disc of 2000 (BG1010) carries out the grinding of thinning back side, is that the abrasive disc of 360 (BG0401) carries out the grinding of thinning back side and select the mill number for wafer 5-8 number for use.
The processing of No. 1 wafer process comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 1 chip back surface is with reference to shown in Figure 1.
The processing of No. 2 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 2 seconds chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 2 chip back surfaces is with reference to shown in Figure 2.
The processing of No. 3 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 3 chip back surfaces is with reference to shown in Figure 3.
The processing of No. 4 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Carry out 5 times washing.
Through after the above-mentioned processing, the situation of the silicon layer of No. 4 chip back surfaces is with reference to shown in Figure 4.
The processing of No. 5 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 5 chip back surfaces is with reference to shown in Figure 5.
The processing of No. 6 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 2 seconds chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 6 chip back surfaces is with reference to shown in Figure 6.
The processing of No. 7 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 7 chip back surfaces is with reference to shown in Figure 7.
The processing of No. 8 wafer processes comprises:
The abrasive disc of 360 (BG1010) grinds;
Carry out 5 times washing.
Through after the above-mentioned processing, the situation of the silicon layer of No. 8 chip back surfaces is with reference to shown in Figure 8.
By above-mentioned example as seen: technique for thinning back side has produced a large amount of damages, and micro-crack and stress may cause the decline of bonding force.High mill number can reduce back side damage, but the difficulty of the sticking joint of metal that too smooth surface increases and silicon.And cause the rising of contact resistance.Chemical corrosion liquid (stress is eliminated corrosive liquid KK-8, decontamination corrosive liquid and buffering oxide layer corrosive liquid KK-2) can be removed the silicon affected layer of 2000A nearly effectively, thereby has reduced mechanical stress.
Thus, the method that the present invention discloses can prevent chip back metal peeling, can accurately judge whether to exist the metal peeling phenomenon; Thereby remove the silicon affected layer effectively with corroding method and reduced mechanical stress; Evaporation process adopts the method for segmentation control technological temperature to reduce Ti, Ni, and the stress mismatch of three kinds of different metals of Ag, thus realize effectively solving the problem of chip back metal peeling and can not making organic staining.
Though technical scheme of the present invention is illustrated in conjunction with preferred embodiment; but it should be appreciated by those skilled in the art; various modifications or change for the above embodiments are predictable; this should not be regarded as having exceeded protection scope of the present invention; therefore; protection scope of the present invention is not limited to above-mentioned specifically described embodiment, and should be the most wide in range scope that meets the inventive features that discloses in this place.
Claims (9)
1. a method that prevents chip back metal peeling is characterized in that, comprising:
Adopt the abrasive disc of a predetermined mill number to carry out the chip back reduction process;
Use chemical corrosion liquid to remove the silicon affected layer of chip back;
Chip is washed, removed residual staining.
2. the method that prevents chip back metal peeling as claimed in claim 1 is characterized in that,
The silicon affected layer of described use chemical corrosion liquid removal chip back comprises the caustic solution of the collocation of using multiple corrosive liquid and multiple etching time.
3. the method that prevents chip back metal peeling as claimed in claim 2 is characterized in that, described number of chemical corrosive liquid comprises:
Stress is eliminated corrosive liquid KK-8, and contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1;
The decontamination corrosive liquid, contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5;
Buffer oxide layer corrosive liquid KK-2, contained material and component thereof are: HF: NH
4F is 1: 10.
4. the method that prevents chip back metal peeling as claimed in claim 3 is characterized in that, described multiple etching time comprises:
1 second, 2 seconds and 5 seconds.
5. the method that prevents chip back metal peeling as claimed in claim 3 is characterized in that, the collocation of multiple corrosive liquid of described use and multiple etching time comprises:
1 second stress is eliminated corrosive liquid KK-8 corrosion;
2 seconds stress is eliminated corrosive liquid KK-8 corrosion;
5 seconds decontamination corrosive liquid corrosion;
1 second buffer oxide layer corrosive liquid KK-2 corrosion;
2 seconds buffer oxide layer corrosive liquid KK-2 corrosion; Wherein
Use each corrosive liquid once to corrode.
6. the method that prevents chip back metal peeling as claimed in claim 5 is characterized in that, uses 5 washings of the laggard row of chemical corrosion corrosion each time.
7. the method that prevents chip back metal peeling as claimed in claim 6 is characterized in that,
In evaporation process, adopt the method for segmentation control technological temperature to reduce Ti, Ni, the stress mismatch of three kinds of different metals of Ag.
8. the method that prevents chip back metal peeling as claimed in claim 7 is characterized in that, the abrasive disc of described predetermined mill number is: the corase grind abrasive disc of the correct grinding abrasive disc or 360 (BG0401) of 2000 (BG1010).
9. as each described method that prevents chip back metal peeling in the claim 1 to 8, it is characterized in that, also comprise: measure the step of chip back metal bonding force, comprise,
Pad pasting, pad pasting on the metal level overleaf;
Chip is severed in scribing;
Chip pickup takes off chip from pad pasting, detects iron and is fascinated by whether the metal remained existence is arranged, if metal residual is arranged, illustrates there is back metal peeling that if there is not metal remained to exist, then explanation does not have back metal peeling.
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| CN200610148734A CN101211773B (en) | 2006-12-30 | 2006-12-30 | Method for preventing chip back metal peeling |
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|---|---|---|---|
| CN200610148734A CN101211773B (en) | 2006-12-30 | 2006-12-30 | Method for preventing chip back metal peeling |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814450A (en) * | 2010-04-29 | 2010-08-25 | 上海宏力半导体制造有限公司 | Method for detecting adhesive force of metal layer on back of wafer |
| CN102522326A (en) * | 2011-12-14 | 2012-06-27 | 杭州立昂微电子股份有限公司 | Production method of semiconductor discrete device back side metal suitable for screen printing |
| CN102569035A (en) * | 2012-02-27 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Method for reworking wafer after interruption of back metallization process |
| CN103303858A (en) * | 2012-03-10 | 2013-09-18 | 中国科学院微电子研究所 | Wet release method of silicon-based MEMS device by using KOH solution |
| CN104051254A (en) * | 2014-06-12 | 2014-09-17 | 江阴新顺微电子有限公司 | Semiconductor chip back side silicon corrosion technique |
| CN104599991A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润上华半导体有限公司 | Wafer detecting method |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1017950B (en) * | 1989-12-18 | 1992-08-19 | 北京大学 | Silicon ic back silver sputtering metallization |
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