Embodiment
The objective of the invention is in order to improve the bonding force between back metal and the deposit substrate silicon, reduce gold-half contact resistance simultaneously, seek suitable silicon chip surface roughness, reduce mechanical stress and the damage that causes by abrasive disc as far as possible, seek suitable silicon etching process, optimize back of the body gold evaporation technological parameter.
The contact area that at all is to increase metallic film and substrate that bonding force improves is so should adopt the technique for thinning back side of roughly grinding number as much as possible in theory.But in fact, the mill number is thick more, and mechanical damage and gravitation will rise by straight line, cause embedded (inline) to lose the rising of sheet rate, also can cause chip to break and other negative issues when the encapsulation of road, back simultaneously.So need choose suitable mill number
After abrasive disc, need carry out destressing to silicon chip handles, because the accessory substance that traditional silicon chip etching solution produces in course of reaction can be attached to silicon chip surface, be difficult to clean with simple, for example the mode of washing (water rinse) removes, and these attachments can make the bonding force of metal descend greatly.Therefore, also need to seek a kind of suitable silicon caustic solution, can remove the defectives such as stress, damage and silicon bits that abrasive disc causes effectively and simultaneously can not cause new staining.
In practical operation, find, when back metal peeling usually occurs in Chip Packaging, when fixedly pad pasting (tape) picked up (pickup), chip back metals deposited film came off from chip back through the chip after the scribing, remained in fixedly on the pad pasting (tape).
In order to improve whole back of the body gold process effectively, at first must effectively measure carrying on the back golden bonding force.Usually produce and go up the adhesiveness that more employing adhesive tape is measured metal, but this method sensitiveness is very poor, can only detect the very serious problem of peeling off, and can't detect for more common critical conditions such as localized delamination.Method of the present invention provides the detection method of pad pasting-scribing-chip pickup, whether metal residual is arranged on pad pasting (tape) with detection, thereby judges whether the phenomenon of metal peeling, and result of the test shows that this is the method for an effective production monitoring.
For mechanical damage and the mechanical stress that abrasive disc causes, the present invention adopts the method that erodes the certain thickness silicon of silicon chip surface to reduce mechanical stress and removes mechanical damage layer.
In addition, in evaporation process, different metal film Ti, Ni, the young modulus of Ag differs bigger, and the stress between film does not match, and easily causes silicon warp and bonding force to descend.Therefore, the present invention adopts the method for segmentation control technological temperature to reduce stress mismatch as much as possible.
The invention provides a kind of method that prevents chip back metal peeling,, comprise following step with reference to shown in Figure 9:
S100. adopt the abrasive disc of a predetermined mill number to carry out the chip back reduction process.The abrasive disc of wherein predetermined mill number is: the corase grind abrasive disc of the correct grinding abrasive disc or 360 (BG0401) of 2000 (BG1010).
S102. use chemical corrosion liquid to remove the silicon affected layer of chip back.The silicon affected layer that uses chemical corrosion liquid to remove chip back comprises the caustic solution of the collocation of using multiple corrosive liquid and multiple etching time.The number of chemical corrosive liquid that uses comprises: stress is eliminated corrosive liquid KK-8, and contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1; The decontamination corrosive liquid, contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5; Buffer oxide layer corrosive liquid KK-2, contained material and component thereof are: HF: NH4F is 1: 10.The multiple etching time that uses comprises: 1 second, 2 seconds and 5 seconds.Usually, the multiple corrosive liquid of formation and the collocation of multiple etching time comprise: 1 second stress is eliminated corrosive liquid KK-8 corrosion; 2 seconds stress is eliminated corrosive liquid KK-8 corrosion; 5 seconds decontamination corrosive liquid corrosion; 1 second buffer oxide layer corrosive liquid KK-2 corrosion; 2 seconds buffer oxide layer corrosive liquid KK-2 corrosion; Wherein use each corrosive liquid once to corrode.
S104. chip is washed, removed residual staining.Reasonable mode is to use 5 washings of the laggard row of chemical corrosion corrosion each time.
Afterwards, in evaporation process, adopt the method for segmentation control technological temperature to reduce Ti, Ni, the stress mismatch of three kinds of different metals of Ag.
Method of the present invention also provides the step of measuring the chip back metal bonding force, comprises,
Pad pasting, pad pasting on the metal level overleaf;
Chip is severed in scribing;
Chip pickup takes off chip from pad pasting, detects iron and is fascinated by whether the metal remained existence is arranged, if metal residual is arranged, illustrates there is back metal peeling that if there is not metal remained to exist, then explanation does not have back metal peeling.
The step of this mensuration can be used as the detection step after the whole flow process, also can use separately as method for measuring and use.
The following describes one group of example.
Table 1
Table 1 has been listed one group of wafer (Wafer), it is respectively No. 1 to No. 8 wafer (Wafer No.1-8), they will be through the processing of different parameters, observe the situation of chip back surface silicon layer afterwards, because chip is from wafer cutting gained, so the silicon layer situation at the back side of wafer is equal to the silicon layer situation of chip back.
In the above-mentioned form:
On behalf of applied stress, Stress relief (1m) eliminate corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion.
On behalf of applied stress, Stress relief (2m) eliminate corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion.
The decontamination corrosive liquid is used in Stain Removal (5m) representative, and (contained material and component thereof are: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion.
Buffered oxide etch (1m) representative uses buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) to carry out 1 second chemical corrosion.
Buffered oxide etch (2m) representative uses buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) to carry out 2 seconds chemical corrosion.
As previously mentioned, according to the present invention, each chemical corrosion liquid all can be used, and the etching time that just each chemical corrosion liquid experienced is different.As shown in table 1, each wafer all experiences the corrosion of 3 kinds of chemical corrosion liquids, wherein the selected forms of corrosion of " zero " expression.
In addition, selecting the mill number for wafer 1-4 number for use is that the abrasive disc of 2000 (BG1010) carries out the grinding of thinning back side, is that the abrasive disc of 360 (BG0401) carries out the grinding of thinning back side and select the mill number for wafer 5-8 number for use.
The processing of No. 1 wafer process comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 1 chip back surface is with reference to shown in Figure 1.
The processing of No. 2 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 2 seconds chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 2 chip back surfaces is with reference to shown in Figure 2.
The processing of No. 3 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 3 chip back surfaces is with reference to shown in Figure 3.
The processing of No. 4 wafer processes comprises:
The abrasive disc of 2000 (BG1010) grinds;
Carry out 5 times washing.
Through after the above-mentioned processing, the situation of the silicon layer of No. 4 chip back surfaces is with reference to shown in Figure 4.
The processing of No. 5 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 5 chip back surfaces is with reference to shown in Figure 5.
The processing of No. 6 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 1 second chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 2 seconds chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 6 chip back surfaces is with reference to shown in Figure 6.
The processing of No. 7 wafer processes comprises:
The abrasive disc of 360 (BG0401) grinds;
Stress is eliminated corrosive liquid KK-8, and (contained material and component thereof are: HNO
3: CH
3COOH: HF is 95: 4: 1) carry out 2 seconds chemical corrosion;
(contained material and component thereof are the decontamination corrosive liquid: NH
4F: H
2O
2: H
2O is 2: 1: 5) carry out 5 seconds chemical corrosion;
Buffer oxide layer corrosive liquid KK-2 (contained material and component thereof are: HF: NH4F is 1: 10) carries out 1 second chemical corrosion;
Carry out 5 times washing after wherein each steps of chemical attack.
Through after the above-mentioned processing, the situation of the silicon layer of No. 7 chip back surfaces is with reference to shown in Figure 7.
The processing of No. 8 wafer processes comprises:
The abrasive disc of 360 (BG1010) grinds;
Carry out 5 times washing.
Through after the above-mentioned processing, the situation of the silicon layer of No. 8 chip back surfaces is with reference to shown in Figure 8.
By above-mentioned example as seen: technique for thinning back side has produced a large amount of damages, and micro-crack and stress may cause the decline of bonding force.High mill number can reduce back side damage, but the difficulty of the sticking joint of metal that too smooth surface increases and silicon.And cause the rising of contact resistance.Chemical corrosion liquid (stress is eliminated corrosive liquid KK-8, decontamination corrosive liquid and buffering oxide layer corrosive liquid KK-2) can be removed the silicon affected layer of 2000A nearly effectively, thereby has reduced mechanical stress.
Thus, the method that the present invention discloses can prevent chip back metal peeling, can accurately judge whether to exist the metal peeling phenomenon; Thereby remove the silicon affected layer effectively with corroding method and reduced mechanical stress; Evaporation process adopts the method for segmentation control technological temperature to reduce Ti, Ni, and the stress mismatch of three kinds of different metals of Ag, thus realize effectively solving the problem of chip back metal peeling and can not making organic staining.
Though technical scheme of the present invention is illustrated in conjunction with preferred embodiment; but it should be appreciated by those skilled in the art; various modifications or change for the above embodiments are predictable; this should not be regarded as having exceeded protection scope of the present invention; therefore; protection scope of the present invention is not limited to above-mentioned specifically described embodiment, and should be the most wide in range scope that meets the inventive features that discloses in this place.