CN101654774B - Method for inhibiting corrosion of metal pad - Google Patents
Method for inhibiting corrosion of metal pad Download PDFInfo
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- CN101654774B CN101654774B CN2008100418816A CN200810041881A CN101654774B CN 101654774 B CN101654774 B CN 101654774B CN 2008100418816 A CN2008100418816 A CN 2008100418816A CN 200810041881 A CN200810041881 A CN 200810041881A CN 101654774 B CN101654774 B CN 101654774B
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- metal pad
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Abstract
The invention provides a method for inhibiting corrosion of a metal pad. The metal pad is made from an alloy of aluminum and copper. The method is used for inhibiting the corrosion of the metal pad manufactured on a chip caused by galvanic effect in a cleaning environment. The method comprises the following steps: 1, forming a titanium nitride layer on the metal pad; and 2, after the titanium nitride layer is reserved on the metal pad for a preset time, removing the titanium nitride layer on the metal pad. A small amount of titanium nitride is spread to the metal pad by forming the titanium nitride layer and removing the titanium nitride layer to inhibit the copper in the metal pad from precipitating from a crystal boundary of the aluminum so as to inhibit the corrosion of the metal pad caused by the galvanic effect. The method for inhibiting the corrosion of the metal pad can effectively solve the problems of wire bonding failure rate increase and packaging yield reduction caused by the corrosion of the metal pad on the chip.
Description
Technical field
The present invention relates to the making field of metal pad in the manufacture of semiconductor, relate in particular to a kind of method that suppresses corrosion of metal pad.
Background technology
In the semi-conductor chip processing procedure, make metal pad and can realize between the chip internal and inner with outside being electrically connected.In follow-up section (die saw) process, need chip to be cleaned then with the deionized water (Deionized Water) of certain temperature.At this moment the metal pad (Pad) that is produced on the chip is corroded easily.Usually metal pad is the alloy material of Al and Cu, because Cu separates out at the crystal boundary of Al easily, two kinds of different metal A l and Cu of activity are easy to generate galvanic effect (Galvanic Effect) in the deionized water environment, cause the higher Al of the activity dissolving that is corroded easily.Therefore in the metal pad of Al and Cu alloy, the composition of metal A l will account for more than 90%, is corroded when dissolving as Al, and the irregular small rut that distributes will appear in the metal pad surface.Very obvious with microscopic examination through the corrosion phenomenon of the metal pad after the washed with de-ionized water.In follow-up routing (Wire bonding) technology, in the time of will existing the corrosive metal pad to be connected with packaging pin, increase the failure rate of routing easily, be metal pad do not form with packaging pin that electroconductibility is connected or metal pad and packaging pin between loose contact, cause the yield of follow-up Chip Packaging to reduce.
Summary of the invention
The object of the present invention is to provide a kind of method that suppresses corrosion of metal pad, under liquid cleaning environment, the problem that galvanic effect causes corrosion of metal pad takes place easily to solve metal pad.
For achieving the above object, the method for inhibition corrosion of metal pad of the present invention may further comprise the steps: step 1 forms one deck titanium nitride layer on the metal pad of making; Step 2: the titanium nitride layer that forms in the step 1 after keeping Preset Time on the described metal pad, is removed titanium nitride layer.
Further, the titanium nitride layer thickness that forms in the step 1 is 700～1000 dusts.
Alternatively, form titanium nitride layer in the step 1 and adopt chemical Vapor deposition process to form, depositing temperature is 440～460 degrees centigrade, and vacuum pressure is 1.5～2 holders, and depositing time is 100～135 seconds.
Alternatively, the Preset Time that titanium nitride stops on the metal pad in the step 2 was at least 2 hours, and stopping environment is the clean room of normal temperature and pressure.
Removing titanium nitride in the step 2 adopts dry etching to remove.Described metal pad material is the alloy of copper and aluminium.
Compare with traditional metal pad making method, the method of inhibition corrosion of metal pad of the present invention is removed this TiN layer again by form the TiN layer earlier on the metal pad of making, the Cu that can effectively suppress in the metal pad separates out from the crystal boundary of Al, suppress the galvanic effect of metal pad in liquid cleaning environment, thereby can effectively suppress to cause the corrosion of metal pad, solve the problem that routing processing procedure failure rate increases and chip packaging yield descends that causes because of corrosion of metal pad because of galvanic effect.
Description of drawings
Below in conjunction with the drawings and specific embodiments the method for inhibition corrosion of metal pad of the present invention is done further concrete description in detail.
Fig. 1 is the method for inhibition corrosion of metal pad of the present invention.
Fig. 2 is the metal pad EDX test pattern that does not adopt the inventive method to handle.
Fig. 3 is the metal pad EDX test pattern of handling under the inventive method different technology conditions.
Fig. 4 is the enlarged photograph figure after the metal pad that do not adopt the inventive method to handle cleans.
Fig. 5 is the enlarged photograph figure after the metal pad of employing the inventive method processing cleans.
Embodiment
The method of the inhibition corrosion of metal pad of present embodiment sees also Fig. 1, and it may further comprise the steps: S1: form titanium nitride layer on the metal pad of making; S2: the titanium nitride layer that step 1 forms is removed the titanium nitride layer on the metal pad after keeping Preset Time on the described metal pad.
Wherein, the metal pad material is the alloy of copper and aluminium.The alloy of copper and aluminium is to make the material that metal pad generally adopts at present.Can avoid like this adopting the novel material problem, the problem includes: the problem of processing compatibility reduces cost.
The titanium nitride layer thickness that forms among the step S1 is 700～1000 dusts.For reduce the present invention shared processing procedure time and cost as far as possible, the thickness of the titanium nitride that forms in the step 1 is unsuitable blocked up.
Forming the nitrogenize carbon-coating among the step S1 adopts chemical Vapor deposition process to form.During chemical vapour deposition, the depositing temperature of titanium nitride is 440～460 degrees centigrade, and vacuum pressure is 1.5～2 holders, and depositing time is 100～135100 seconds.Under this mode of deposition, form the titanium nitride of 700～1000 dust thickness.
The time that titanium nitride layer keeps on the metal pad among the step S2 was at least 2 hours.The environment that titanium nitride stops on the metal pad among the step S2 is the clean room of normal temperature and pressure.The time that titanium nitride stops among sedimentary processing condition of titanium nitride and the step S2 among the step S1 all is for guaranteeing that a sedimentary TiN layer part diffuses into metal pad, suppressing Cu and separate out from the crystal boundary of Al.To rest on the metal pad time unsuitable long for titanium nitride among the step S2, suppresses the purpose that Cu separates out from the crystal boundary of Al though overlong time also can reach, and this method takies the inhibition efficient that the processing procedure overlong time can reduce the inventive method.
Follow-up metal pad is not carried out routing for the titanium nitride that makes formation does not influence, realize that electroconductibility is connected between metal pad and the packaging pin, being deposited on the metal pad titanium nitride layer need remove.Titanium nitride adopts dry etching to remove among the step S2.Dry etching is relatively good to the etching selectivity of TiN material and Al, can remove the TiN material on the metal pad fully.
The titanium nitride that is 700 dusts with step S1 formation thickness of the present invention is an example, stops and removes titanium nitride layer on the metal pad fully after 2 hours.The titanium nitride deposition process conditions of the titanium nitride layer correspondence of this thickness: 440 degrees centigrade of depositing temperatures, vacuum pressure are 1.5 holders, and depositing time is 100 seconds.Crystal boundary place to this metal pad adopts EDX (X-ray energy spectrometer) to test.Test result sees also Fig. 3.The crystal boundary place of the metal pad that the traditional fabrication method is produced adopts EDX to test equally, and test result sees also Fig. 2.X-coordinate is an energy in Fig. 2 and Fig. 3 spectrogram, and ordinate zou is the test signal number.Can find out that Fig. 2 shows that the test signal number of copper on the metal pad of traditional fabrication method is more, promptly the copper (Cu) that occurs of the crystal boundary of conventional metals pad is separated out more.With Fig. 2 contrast, the test signal at metal pad crystal boundary place is mainly the test signal of Al among Fig. 3, does not promptly have Cu to separate out.
The titanium nitride that is 850 dusts with step S1 formation thickness of the present invention is an example, stops and removes titanium nitride on the metal pad fully after 2 hours.The titanium nitride deposition process conditions of the titanium nitride layer correspondence of this thickness: 450 degrees centigrade of depositing temperatures, vacuum pressure are 1.8 holders, and depositing time is 120 seconds.Crystal boundary place to metal pad adopts EDX (X-ray energy spectrometer) to test.Test result still as shown in Figure 3, metal pad crystal boundary place does not have copper and separates out.
The titanium nitride that is 1000 dusts with step S1 formation thickness of the present invention is an example, stops and removes titanium nitride on the metal pad fully after 2 hours.The titanium nitride deposition process conditions of the titanium nitride layer correspondence of this thickness: 460 degrees centigrade of depositing temperatures, vacuum pressure are 2 holders, and depositing time is 135 seconds.Crystal boundary place to metal pad adopts EDX (X-ray energy spectrometer) to test.Test result still as shown in Figure 3, metal pad crystal boundary place does not have copper and separates out.
Traditional fabrication is had the chip wafer of metal pad and put into 50 degrees centigrade deionized water environment simultaneously and clean through dividing invention to suppress chip after the corrosion of metal pad method is handled, after 1 hour, adopt optical loupes to observe to the metal pad of traditional method with through the metal pad after the method processing of the present invention.The observations of conventional metals pad sees also Fig. 4, and the little concave point of the irregular corrosion of many distributions is arranged on the metal pad.The observations that suppresses the metal pad after caustic solution is handled through the present invention sees also Fig. 5.The metal pad smooth surface that Fig. 5 shows is not found the corrosive small rut.
In sum, the packed particle of Cu is bigger on the crystal boundary of the Al of the chip metal pad of traditional fabrication, pile up comparatively seriously, and after the processing procedure through the method for inhibition corrosion of metal pad of the present invention, the accumulation situation of the Cu on the chip on the Al crystal boundary of metal pad is less.Therefore, the method for inhibition corrosion of metal pad of the present invention can suppress effectively that Cu separates out from the crystal boundary of Al in the metal pad, thereby is suppressed at incident galvanic effect in the follow-up cleaning environment, and then suppresses the corrosion of metal pad.
Claims (6)
1. suppress the method for corrosion of metal pad, it is characterized in that, may further comprise the steps:
Step 1: on the metal pad of making, form titanium nitride layer;
Step 2: described titanium nitride layer after keeping Preset Time on the metal pad, is removed titanium nitride layer; Wherein said metal pad material is the alloy of copper and aluminium.
2. the method for inhibition corrosion of metal pad as claimed in claim 1 is characterized in that, the thickness of the titanium nitride layer that forms in the described step 1 is 700～1000 dusts.
3. the method for inhibition corrosion of metal pad as claimed in claim 1 is characterized in that, forms titanium nitride in the described step 1 and adopts chemical Vapor deposition process, and depositing temperature is 440～460 degrees centigrade, and vacuum pressure is 1.5～2 holders, and depositing time is 100～135 seconds.
4. the method for inhibition corrosion of metal pad as claimed in claim 1 is characterized in that, the Preset Time that titanium nitride stops on the metal pad in the described step 2 was at least 2 hours.
5. the method for inhibition corrosion of metal pad as claimed in claim 1 is characterized in that, the environment that titanium nitride stops on the metal pad in the described step 2 is the clean room of normal temperature and pressure.
6. the method for inhibition corrosion of metal pad as claimed in claim 1 is characterized in that, adopts dry method etch technology to remove titanium nitride layer in the described step 2.
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| CN2008100418816A CN101654774B (en) | 2008-08-19 | 2008-08-19 | Method for inhibiting corrosion of metal pad |
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| CN2008100418816A CN101654774B (en) | 2008-08-19 | 2008-08-19 | Method for inhibiting corrosion of metal pad |
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| CN101654774A CN101654774A (en) | 2010-02-24 |
| CN101654774B true CN101654774B (en) | 2011-09-07 |
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| NL2014497B1 (en) * | 2015-03-20 | 2017-01-19 | Asm Int Nv | Method for cleaning deposition apparatus. |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281249A (en) * | 1999-06-30 | 2001-01-24 | 株式会社东芝 | Semiconductor device and its manufacturing method |
| CN1414603A (en) * | 2002-09-27 | 2003-04-30 | 上海华虹（集团）有限公司 | Method of forming TiN barrier by chemical rapour phase deposition |
| CN101154646A (en) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | Metal line in semiconductor device and method for forming the same |
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- 2008-08-19 CN CN2008100418816A patent/CN101654774B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281249A (en) * | 1999-06-30 | 2001-01-24 | 株式会社东芝 | Semiconductor device and its manufacturing method |
| CN1414603A (en) * | 2002-09-27 | 2003-04-30 | 上海华虹（集团）有限公司 | Method of forming TiN barrier by chemical rapour phase deposition |
| CN101154646A (en) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | Metal line in semiconductor device and method for forming the same |
Non-Patent Citations (1)
| Title |
|---|
| 李幼真等.集成电路Cu金属化中的扩散阻挡层.《材料导报》.2007,第21卷(第5期),第17-20页. * |
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