CN106683995B - A kind of processing method for carrying on the back golden product - Google Patents
A kind of processing method for carrying on the back golden product Download PDFInfo
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- CN106683995B CN106683995B CN201510762733.3A CN201510762733A CN106683995B CN 106683995 B CN106683995 B CN 106683995B CN 201510762733 A CN201510762733 A CN 201510762733A CN 106683995 B CN106683995 B CN 106683995B
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- 238000003672 processing method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 23
- 230000008020 evaporation Effects 0.000 claims abstract description 23
- 238000005554 pickling Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000012544 monitoring process Methods 0.000 claims abstract description 7
- 238000003325 tomography Methods 0.000 claims abstract description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 238000009461 vacuum packaging Methods 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000008439 repair process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 33
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000005611 electricity Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010019233 Headaches Diseases 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 231100000869 headache Toxicity 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of processing methods for carrying on the back golden product, comprising: cleans back side silicon substrate using pickling solution, removes the oxide layer of the back side surface of silicon；In the first waiting time after the back side silicon substrate cleaning, silver and underlying metal to the back side surface of silicon are evaporated according to default evaporation rate and forms the golden product of back, and check whether the slice tomography of monitoring piece finds cavity during evaporation silver and underlying metal；If it was found that cavity, the default evaporation rate is improved；Electric leakage reparation is carried out to the golden product of the undesirable back.The processing method of the golden product of back of the invention, improves the processing flow for carrying on the back golden product, and the expulsion rate for reducing the back silver of the golden product of back reduces production cost to substantially increase the yield rate for carrying on the back golden product.
Description
Technical field
The present invention relates to semiconductor field more particularly to a kind of processing methods for carrying on the back golden product.
Background technique
Carry on the back golden product, such as semiconductor field (DMOS), insulated gate bipolar transistor (IGBT) and Schottky two
Pole pipe etc., no more than back silver falls off (Ag Peeling) the problem of most headache in production process.The reason of back silver falls off solution
It releases and is not difficult, be exactly that back silver is stain and is oxidized and falls off.How to guarantee that the back silver for carrying on the back golden product does not take off in process of production
It falls, is a problem urgently to be resolved.
Summary of the invention
In order to overcome the technical issues of back silver falls off in the production process for carrying on the back golden product in the prior art, the present invention is provided
A kind of processing method for carrying on the back golden product.
In order to solve the above-mentioned technical problem, the present invention adopts the following technical scheme:
The present invention provides a kind of processing methods for carrying on the back golden product, comprising:
Back side silicon substrate is cleaned using pickling solution, removes the oxide layer of the back side surface of silicon；
In the first waiting time after the back side silicon substrate cleaning, silver and underlying metal are evaporated according to default evaporation rate
It is formed to the back side surface of silicon and carries on the back golden product, and check the slice of monitoring piece during evaporation silver and underlying metal
Whether tomography finds cavity；If it was found that cavity, the default evaporation rate is improved；
Electric leakage reparation is carried out to the golden product of the undesirable back.
Furthermore, it is understood that in the processing method of the golden product of the back, it is described that the golden product of the undesirable back is leaked
Electricity is repaired after step further include:
The golden product of the back is vacuum-packed with nonhygroscopic barrier paper, and in vacuum packaging outer packing twice packaging
Bag.
Furthermore, it is understood that in the processing method of the golden product of the back, it is described to be carried out back side silicon substrate using pickling solution
Cleaning, the oxide layer step for removing the back side surface of silicon include: before
The back side silicon substrate to be cleaned is picked up by clean protection tool.
Furthermore, it is understood that the pickling solution includes that ethylene glycol EG and buffering are carved in the processing method of the golden product of the back
The mass ratio for losing liquid BOE, the EG and the BOE is 16:1.
Furthermore, it is understood that in the processing method of the golden product of the back, it is described that the golden product of the undesirable back is leaked
Electricity repairs step
The golden product of the undesirable back is toasted using vacuum drying oven, baking time is 0.5 to 1 hour, baking temperature
Degree is 150 DEG C.
Furthermore, it is understood that in the processing method of the golden product of the back, if first etc. after back side silicon substrate cleaning
To not be evaporated silver and underlying metal to the back side silicon substrate in the time, then the back side silicon substrate is carried out again clear
It washes.
Furthermore, it is understood that first waiting time is half an hour in the processing method of the golden product of the back.
Furthermore, it is understood that in the processing method of the golden product of the back, it is described that the golden product of the undesirable back is leaked
Before electricity is repaired further include:
The golden product of the undesirable back to be repaired stops in air was no more than for the second waiting time, if more than second etc.
To the time, then the golden product of the back is put into nitrogen cabinet.
Furthermore, it is understood that the underlying metal includes nickel and titanium in the processing method of the golden product of the back.
Furthermore, it is understood that second waiting time is half an hour in the processing method of the golden product of the back.
The beneficial effects of the present invention are: the processing method of the golden product of back of the invention, to carry on the back the processing flow of golden product into
It has gone improvement, has reduced and carry on the back the expulsion rate of the back silver of golden product and reduced to substantially increase the yield rate for carrying on the back golden product
Production cost.
Detailed description of the invention
Fig. 1 shows the flow charts for the processing method that golden product is carried on the back in the embodiment of the present invention；
Fig. 2, which indicates to carry on the back in the embodiment of the present invention, there is the schematic diagram in cavity in golden product processing.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, right below in conjunction with the accompanying drawings and the specific embodiments
The present invention is described in detail.
Shown in referring to Fig.1, the present invention provides a kind of processing methods for carrying on the back golden product, comprising:
Step 1, back side silicon substrate is cleaned using pickling solution, removes the oxide layer of back side surface of silicon.The back side
If the surface of silicon substrate is oxidized to form oxide layer, the attached of silver and underlying metal overleaf surface of silicon can be seriously affected
Put forth effort, to increase the risk of back silver to fall off.Using the oxide layer of pickling solution removal back side surface of silicon, be conducive to
The attachment of silver and underlying metal overleaf surface of silicon.
Step 2, in the first waiting time after the cleaning of back side silicon substrate, silver and bottom gold are evaporated according to default evaporation rate
Belong to back side surface of silicon being formed and carry on the back golden product, and checks that the slice of monitoring piece is disconnected during evaporation silver and underlying metal
Whether layer finds cavity；If it was found that cavity, default evaporation rate is increased.It after the cleaning of back side silicon substrate, cannot be long placed in, half
Cleaned back side silicon substrate is evaporated silver and underlying metal within hour, is formed newly to prevent air oxidation back side silicon substrate
Oxide layer.Evaporation rate can not be too slow, and evaporation rate is too slow, and nickel layer is easy to appear cavity and then leads to the bottoms such as silver and nickel
It falls off between metal in conjunction with bad.It is put into a monitoring piece and is evaporated silver and bottom gold together with back side silicon substrate to be processed
Belong to, the cost of monitoring piece is low, can be needed to carry out cut sections for microscopic examination according to detection.Referring to shown in Fig. 2, if the slice tomography of monitoring piece
It was found that cavity A, then need to optimize the menu of evaporation equipment, default evaporation rate increased.
Step 3, electric leakage reparation, the yield rate of Lai Tigao product, to reduce production cost are carried out to the golden product of undesirable back.
The processing method of the golden product of back of the invention, improves the processing flow for carrying on the back golden product, reduces back gold
The expulsion rate of the back silver of product reduces production cost to substantially increase the yield rate for carrying on the back golden product.
Furthermore, it is understood that including: to pick up back side silicon substrate to be cleaned by clean protection tool before step 1
It takes.Before back side silicon substrate evaporates back metal, it should it is contaminated to prevent the back side, once the back side is contaminated, silver and the bottoms such as nickel and titanium
Layer metal is bad in conjunction with the silicon substrate of the back side, and the back silver, nickel and titanium that will lead to bulk fall off together.It is to be cleaned when picking up
When the silicon substrate of the back side, have to be picked up using clean protection tool.In general, operator wears finger-stall and carries out
It is cleaned again after the pickup of back side silicon substrate.Finger-stall pollution back side silicon substrate is easy to be ignored, so finger-stall is disposable
It uses, finger-stall is lost once dirty, otherwise can become pollution sources.
Furthermore, it is understood that the natural oxidizing layer of pickling back side silicon substrate is completely thorough, otherwise silver and bottom in step 1
Metal is bad in conjunction with the silicon substrate of the back side, is easy to fall off.Pickling solution include ethylene glycol (EG) and buffering etching liquid (BOE), EG and
The mass ratio of BOE is 16:1.Pickling solution uses at room temperature, and natural oxidizing layer can be washed away by impregnating 120sec.
After completion step 1, before progress step 2, it should be noted that: the first waiting time after the cleaning of back side silicon substrate
Silver and underlying metal inside are not evaporated to back side silicon substrate, then back side silicon substrate is cleaned again.Back side silicon substrate is clear
Exposure is in air after half an hour after washing, and the surface of back side silicon substrate can be oxidized to form oxide layer again, back metal with
There cannot be natural oxidizing layer between the silicon substrate of the back side, otherwise the binding force of back metal and back side silicon substrate is bad, slight shadow
Ring electrical parameter, it is serious that back metal is caused to fall off, thus evaporation before pickling and evaporation between the waiting time should half an hour,
If needing pickling again beyond half an hour.
It specifically, is not that the evaporation rate of setting is better in step 2.By taking the evaporator of model EI-5Z as an example,
The evaporation rate of titanium is 15A/Sec, the evaporation rate of nickel is 12A/Sec, the evaporation rate of silver is that 18A/Sec is advisable.Evaporation speed
Rate is too fast, is easy to splash source, the two needs to balance.
Specifically, the specific operating process of step 3 are as follows: the golden product of the undesirable back is dried using vacuum drying oven
Roasting, baking time is 0.5 to 1 hour, and baking temperature is 150 DEG C.It is easy to that back silver oxidation occurs after antivacuum baking oven baking
And fall off, because oxygen when antivacuum baking in air can aoxidize back side silver surface.
It should be noted that undesirable back gold product to be repaired stops in air is no more than second etc. before step 3
To the time, in general the second waiting time was half an hour, if being more than half an hour, will carry on the back golden product and is put into nitrogen cabinet.This
It is to guarantee that the golden product of undesirable back will not be oxidized falling off so as to cause back silver during waiting to be repaired.
Furthermore, it is understood that after step 3 further include: golden product will be carried on the back and be vacuum-packed with nonhygroscopic barrier paper, and
In vacuum packaging outer packing twice packaging bag.After carrying on the back golden product testing qualification, packed using barrier paper, this link is often
It is ignored, pay attention to inadequate misoperation will lead to it is a large amount of carry on the back golden products back silvers occur fall off.The finished product packing for carrying on the back golden product is wanted
Ask very high, barrier paper must use nonhygroscopic barrier paper or dustless barrier paper etc..Twice packaging bag must be used after vacuum packaging, this
It is not oxidized that sample just can effectively prevent silver surface under adverse circumstances.If the packaging material moisture absorption or sealing are bad, it will lead to back gold and produce
Back golden hair yellow (back silver oxidation) even back silver that product occur large area when waiting to be packaged falls off.
The back side for carrying on the back golden product is the metals such as titanium, nickel and silver, and outmost silver is very active, is easy stain, be oxidized.Institute
After being evaporated with back metal, no matter yield test or the links such as shipment inspection, packaging, back gold product can not stop in air
It crosses for a long time, otherwise the steam in air, oxygen, soda acid gas may stain silver and cause to fall off, such as waiting time (Q-Time)
It must be placed into nitrogen cabinet more than half an hour to wait.
It encapsulates after factory seals off the vacuum packaging bag for carrying on the back golden product, carrying on the back golden product must encapsulate immediately, such as encapsulate endless, need weight
It is newly vacuum-packed, deposits nitrogen cabinet preservation, be otherwise also easy to happen silver surface oxidation and fall off.
Above-described is the preferred embodiment of the present invention, it should be pointed out that the ordinary person of the art is come
It says, can also make several improvements and retouch under the premise of not departing from principle of the present invention, these improvements and modifications also exist
In protection scope of the present invention.
Claims (10)
1. a kind of processing method for carrying on the back golden product characterized by comprising
Back side silicon substrate is cleaned using pickling solution, removes the oxide layer of the back side surface of silicon；
In the first waiting time after the back side silicon substrate cleaning, silver and underlying metal are evaporated to institute according to default evaporation rate
It states back side surface of silicon and forms the golden product of back, and check the slice tomography of monitoring piece during evaporation silver and underlying metal
Whether cavity is found；If it was found that cavity, the default evaporation rate is improved；
Electric leakage reparation is carried out to the golden product of the undesirable back.
2. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that described to the golden product of the undesirable back
Carry out electric leakage repair step after further include:
The golden product of the back is vacuum-packed with nonhygroscopic barrier paper, and in vacuum packaging outer packing twice packaging bag.
3. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that described to be served as a contrast back side silicon using pickling solution
Bottom is cleaned, and includes: before removing the oxide layer step of the back side surface of silicon
The back side silicon substrate to be cleaned is picked up by clean protection tool.
4. the as described in claim 1 processing method for carrying on the back golden product, which is characterized in that the pickling solution include ethylene glycol EG and
The mass ratio for buffering etching liquid BOE, the EG and the BOE is 16:1.
5. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that described to the golden product of the undesirable back
Carrying out electric leakage reparation step includes:
The golden product of the undesirable back is toasted using vacuum drying oven, baking time is 0.5 to 1 hour, and baking temperature is
150℃。
6. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that if after back side silicon substrate cleaning
In first waiting time not to the back side silicon substrate be evaporated silver and underlying metal, then again to the back side silicon substrate into
Row cleaning.
7. the processing method as described in claim 1 or 6 for carrying on the back golden product, which is characterized in that first waiting time is half
Hour.
8. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that described to the golden product of the undesirable back
Before carrying out electric leakage reparation further include:
The golden product of the undesirable back to be repaired stops in air was no more than for the second waiting time, if wait more than second
Between, then the golden product of the back is put into nitrogen cabinet.
9. the processing method as described in claim 1 for carrying on the back golden product, which is characterized in that the underlying metal includes nickel and titanium.
10. the processing method as claimed in claim 8 for carrying on the back golden product, which is characterized in that second waiting time is half small
When.
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| CN201510762733.3A CN106683995B (en) | 2015-11-10 | 2015-11-10 | A kind of processing method for carrying on the back golden product |
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| CN201510762733.3A CN106683995B (en) | 2015-11-10 | 2015-11-10 | A kind of processing method for carrying on the back golden product |
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| CN106683995A CN106683995A (en) | 2017-05-17 |
| CN106683995B true CN106683995B (en) | 2019-08-06 |
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| US5504017A (en) * | 1994-12-20 | 1996-04-02 | Advanced Micro Devices, Inc. | Void detection in metallization patterns |
| CN1866498A (en) * | 2005-05-18 | 2006-11-22 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing clearance generation between different materials in semiconductor device |
| CN101211773A (en) * | 2006-12-30 | 2008-07-02 | 上海先进半导体制造股份有限公司 | Method for preventing chip back metal peeling |
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| CN103219416A (en) * | 2013-03-22 | 2013-07-24 | 中山大学 | Preparation method for local back surface field of crystalline silicon solar cell |
| CN104576347B (en) * | 2014-08-18 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | The ameliorative way of IGBT back face metalizations |
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