CN104064488B - The method that detection semiconductor chip metal layer on back separates - Google Patents
The method that detection semiconductor chip metal layer on back separates Download PDFInfo
- Publication number
- CN104064488B CN104064488B CN201410260298.XA CN201410260298A CN104064488B CN 104064488 B CN104064488 B CN 104064488B CN 201410260298 A CN201410260298 A CN 201410260298A CN 104064488 B CN104064488 B CN 104064488B
- Authority
- CN
- China
- Prior art keywords
- chip
- thin film
- metal layer
- baking oven
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The present invention relates to a kind of method detecting the separation of semiconductor chip metal layer on back, it is characterized in that said method comprising the steps of: step one, stickup thin film on chip back metal layer to be detected: be placed on by chip on platform clean, agranular, be pasted onto equably on chip back metal layer by thin film；Step 2, the chip posting thin film is toasted: the chip pasted is put into baking oven; protect toward being passed through nitrogen in baking oven simultaneously; requiring the temperature of baking oven between 80 DEG C ~ 100 DEG C, baking time is 25 minutes to 30 minutes, and nitrogen requires that flow is in the range of 9L/min ~ 11L/min；Step 3: remove the thin film on chip back metal layer: taken out from baking box by the chip of step 2, throws off the thin film being bonded on chip back metal layer after cooling down 5 minutes.
Description
Technical field
The present invention relates to a kind of method detecting the separation of semiconductor chip metal layer on back.Belong to integrated circuit or discrete device chip detection technical field.
Background technology
Either satelite rocket guided-missile submarine, or colour TV Refrigerator with acoustic equipment air-conditioning used in everyday, all it be unable to do without diode, audion, these semiconductor device of integrated circuit, the semiconductor device loss brought of once losing efficacy is huge, in some the most catastrophic consequence, and the quality of metal system and metallization process can directly affect electrical characteristics and the reliability of semiconductor device.NASA carries out dissection and analysis discovery to the product lost efficacy, the inefficacy relevant with metallization accounts for device and always lost efficacy the 56% of ratio, visible metallization is big on the impact of device reliability, and the separation of the back face metalization of chip is the important factor of catastrophic failure in metallization.So, in industrial processes, it is judged that whether chip back metal layer separates is particularly important.
Metal layer on back separates and includes separating between chip back metal layer and metal level and separating between chip back with metal level.
Before the present invention makes, the method that conventional detection chip metal layer on back separates has a following two kinds:
Current methods one:
Step one, by semiconductor chip scribing to be tested；
Step 2, the chip pulled is carried out bonding die；
Step 3, test thrust with special equipment, judge whether chip back metal layer separates by the result of test thrust and the situation of chip cracks；
It is disadvantageous in that:
1, relatively costly；
2, test period is long, inefficiency；
3, this detection method is destructive testing.
Current methods two:
Stannum or the material such as lead and stannum that step one, employing melt are coated with on semiconductor chip back face metalization surface；
After step 2, melted stannum or the cooling of the material such as lead and stannum, use the mode of machinery to make chip cracks, judge whether chip back metal layer separates by the situation observing chip cracks.
It is disadvantageous in that:
1, waste of material is big, relatively costly；
2, this detection method is destructive testing；
3, testing reliability is general.
To sum up: the requirement that two kinds of existing detection methods can't reach efficiently, high reliability, without loss detection chip metal layer on back separate, industrialized production is not suitable for.
Summary of the invention
It is an object of the invention to overcome above-mentioned deficiency, it is provided that a kind of energy method efficient, lossless, that detection semiconductor chip metal layer on back separates with high reliability, reduce waste of material, reduce production cost, improve detection efficiency.
The object of the present invention is achieved like this: a kind of method detecting the separation of semiconductor chip metal layer on back, said method comprising the steps of:
Step one, on chip back metal layer to be detected paste thin film
Chip is placed on platform clean, agranular, thin film is pasted onto on chip back metal layer equably；
Step 2, the chip posting thin film is toasted
The chip pasted is put into baking oven, protects toward being passed through nitrogen in baking oven, it is desirable to the temperature of baking oven is between 80 DEG C ~ 100 DEG C, and baking time is 25 minutes to 30 minutes, and nitrogen requirement flow is in the range of 9L/min ~ 11L/min simultaneously；
Step 3: remove the thin film on chip back metal layer
The chip of step 2 is taken out from baking box, after cooling down 5 minutes, the thin film being bonded on chip back metal layer is thrown off.
Thin film cohesive force in step one is greater than 3.0N/20mm, and the ductility of thin film is less than 150%, and thin film itself is relatively soft, it is impossible in rigidity, and thin film color even is consistent, without metallic luster, and whole clearing or translucent.
Being left in by chip during step 3 dyestripping on the platform offering vacuum hole or vacuum tank, platform vacuum degree is more than 7KPa, and dyestripping speed controlling is at below 10mm/S.
Compared with prior art, the invention has the beneficial effects as follows:
Whether the present invention uses thin film to paste, the mode of dyestripping, reached directly perceived, high efficiency, without loss detection chip metal layer on back and separated, significantly reduced testing cost；Simultaneously as Examination region is whole chip backs, it is possible to check that the metal level unfavorable condition of regional area, relatively current methods one and current methods two reliability significantly improves, it is suitable for industrialized production and uses.
Detailed description of the invention
The present invention relates to a kind of method detecting the separation of semiconductor chip metal layer on back, said method comprising the steps of:
Step one, on chip back metal layer to be detected paste thin film
During stickup, chip is placed on platform clean, agranular, with roller, thin film is pasted onto on chip back metal layer equably, it is well combined, thin film requires all to cover overleaf on metal layer, bubble, granule etc. is not had, it is desirable to the cohesive force of thin film is greater than 3.0N/20mm, it is ensured that the cohesive force between chip back metal layer and chip between thin film and back face metalization layer, the ductility of thin film is less than 150%, it is ensured that noresidue after dyestripping；Thin film itself is relatively soft, it is impossible in rigidity, and thin film color even is consistent, without metallic luster, whole clearing or translucent, due to paste require higher, the roller used can not use normal plastic material, and needs to use more soft silica gel material to replace.
Step 2, the chip posting thin film is toasted
The silicon chip pasted is placed on high temperature resistant fixture; put into baking oven; protect by being passed through nitrogen in baking oven; require that the temperature of baking oven is between 80 DEG C ~ 100 DEG C; baking time is 25 minutes to 30 minutes, and nitrogen requires that flow, in the range of 9L/min ~ 11L/min, makes thin film soften with the contact surface of chip by baking; there is certain fluidity, thus improve the associativity between thin film and chip.
Step 3: remove the thin film on chip back metal layer
The chip of step 2 is taken out from baking box, after cooling down 5 minutes, the thin film being bonded on chip back metal layer is thrown off, during dyestripping, chip is left in and there is certain vacuum degree, on the platform of surfacing, vacuum hole or vacuum tank can be offered on platform, it is evenly distributed, platform vacuum degree needs more than more than 7KPa, during dyestripping, speed should uniformity, should keep continuous during dyestripping, can not stop, speed needs to control at below 10mm/S, by observing whether be stained with back face metalization layer on the thin film thrown off, judge whether chip back metal layer separates.
Claims (2)
1. one kind is detected the method that semiconductor chip metal layer on back separates, it is characterised in that said method comprising the steps of:
Step one, on chip back metal layer to be detected paste thin film
Chip is placed on platform clean, agranular, thin film is pasted onto equably on chip back metal layer, thin film cohesive force is greater than 3.0N/20mm, the ductility of thin film is less than 150%, thin film itself is relatively soft, it is impossible in rigidity, and thin film color even is consistent, without metallic luster, whole clearing or translucent；
Step 2, the chip posting thin film is toasted
The chip pasted is put into baking oven, protects toward being passed through nitrogen in baking oven, it is desirable to the temperature of baking oven is between 80 DEG C ~ 100 DEG C, and baking time is 25 minutes to 30 minutes, and nitrogen requirement flow is in the range of 9L/min ~ 11L/min simultaneously；
Step 3: remove the thin film on chip back metal layer
The chip of step 2 is taken out from baking oven, after cooling down 5 minutes, the thin film being bonded on chip back metal layer is thrown off.
A kind of method detecting the separation of semiconductor chip metal layer on back the most according to claim 1, when it is characterized in that step 3 dyestripping, chip is left on the platform offering vacuum hole or vacuum tank, platform vacuum degree is more than 7KPa, and dyestripping speed controlling is at below 10mm/S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410260298.XA CN104064488B (en) | 2014-06-12 | 2014-06-12 | The method that detection semiconductor chip metal layer on back separates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410260298.XA CN104064488B (en) | 2014-06-12 | 2014-06-12 | The method that detection semiconductor chip metal layer on back separates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104064488A CN104064488A (en) | 2014-09-24 |
| CN104064488B true CN104064488B (en) | 2016-08-17 |
Family
ID=51552146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410260298.XA Active CN104064488B (en) | 2014-06-12 | 2014-06-12 | The method that detection semiconductor chip metal layer on back separates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104064488B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211773A (en) * | 2006-12-30 | 2008-07-02 | 上海先进半导体制造股份有限公司 | Method for preventing chip back metal peeling |
| CN103249562A (en) * | 2010-12-09 | 2013-08-14 | 旭化成株式会社 | Fine-structure laminate, method for preparing fine-tructure laminate, and production method for fine-structure laminate |
-
2014
- 2014-06-12 CN CN201410260298.XA patent/CN104064488B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211773A (en) * | 2006-12-30 | 2008-07-02 | 上海先进半导体制造股份有限公司 | Method for preventing chip back metal peeling |
| CN103249562A (en) * | 2010-12-09 | 2013-08-14 | 旭化成株式会社 | Fine-structure laminate, method for preparing fine-tructure laminate, and production method for fine-structure laminate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104064488A (en) | 2014-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200723382A (en) | Method for processing wafer | |
| WO2012057893A3 (en) | Multiple bonding layers for thin-wafer handling | |
| WO2006038030A3 (en) | Equipment for wafer bonding | |
| WO2005123388A3 (en) | Magneto-active adhesive systems | |
| WO2012092614A3 (en) | Abrasive article and method of forming | |
| WO2009153422A8 (en) | Nitrogen-plasma surface treatment in a direct bonding method | |
| WO2009060686A1 (en) | Adhesive sheet for inspection | |
| WO2013066455A3 (en) | Flattened substrate surface for substrate bonding | |
| CN107851602A (en) | Semiconductor device manufacture film | |
| JP2017503341A (en) | Reduction of warpage in a structure having an electric circuit mechanism | |
| FR2963982B1 (en) | LOW TEMPERATURE BONDING PROCESS | |
| TW200707695A (en) | Electrostatic chuck | |
| MY155481A (en) | Bonding method and bonding apparatus | |
| CN110214369A (en) | Method and apparatus for bonding chip | |
| JP2012062405A (en) | Pressure-sensitive adhesive tape | |
| MY196760A (en) | Resin composition, resin layer, permanent adhesive, adhesive for temporary bonding, laminated film, processed wafer and method for manufacturing electronic component or semiconductor device | |
| IN2012DN02685A (en) | ||
| WO2011057850A3 (en) | Micromechanical method and corresponding assembly for bonding semiconductor substrates and correspondingly bonded semiconductor chip | |
| WO2007024730A3 (en) | Wafer level hermetic bond using metal alloy | |
| WO2015107290A3 (en) | Process for placing and bonding chips on a receiving substrate using a pad, by means of a magnetic, electrostatic or electromagnetic force | |
| CN104064488B (en) | The method that detection semiconductor chip metal layer on back separates | |
| WO2010127320A3 (en) | Methods for wafer bonding, and for nucleating bonding nanophases | |
| WO2009128786A3 (en) | A system and process for dicing integrated circuits | |
| MX2014002608A (en) | Semiconductor device and method for manufacturing same. | |
| WO2006058076A3 (en) | Method and structure for implanting bonded substrates for electrical conductivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214434 Chengjiang East Road, Binjiang Development Zone, Jiangyin City, Wuxi City, Jiangsu Province Patentee after: Jiangsu Xinshun Microelectronics Co.,Ltd. Address before: 214434 Chengjiang East Road, Binjiang Development Zone, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: XINSUN Co.,Ltd. |