CN101197398A - 串叠式太阳能电池结构 - Google Patents

串叠式太阳能电池结构 Download PDF

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CN101197398A
CN101197398A CN200710088105.7A CN200710088105A CN101197398A CN 101197398 A CN101197398 A CN 101197398A CN 200710088105 A CN200710088105 A CN 200710088105A CN 101197398 A CN101197398 A CN 101197398A
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amorphous silicon
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赖利弘
黄堃芳
谢文升
赖利温
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Millennium Communication Co Ltd
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Abstract

一种串叠式太阳能电池结构，包含一非晶硅基太阳能电池设置在一非硅太阳能电池之上，非晶硅基太阳能电池作为抗反射表层并吸收短波长入射光。本发明的非晶硅太阳能电池具有较高的开路电压及低电流，相对捕捉太阳光谱中波长范围介于400至900纳米(nm)间的光波并转换为电力。本发明设在底层太阳能电池上的非晶硅层对于光能介于2.7到4电子伏特(eV)具有较佳的效果。

Description

串叠式太阳能电池结构
技术领域
本发明涉及一种串叠式太阳能电池，特别是一种具有非晶硅基的顶层太阳能电池的串叠式太阳能电池。
背景技术
为了光伏电子元件的输出达最大化，被半导体材料所吸收的不同能量及波长的光子的数量需不断提升。太阳光的光谱约略分布在300至2200纳米之间，其所对应的能量分别为介于4.2至0.59电子伏特(eV)之间。光伏电子元件中，形成元件吸收层的不同掺杂型态的半导体层，其导带与共价带的能量差异称为光能隙(optical bandgap energy)，而能被光伏电子元件所吸收的太阳光的能量范围取决于此光能隙。当太阳辐射线能量小于光能隙时，则不会被半导体材料吸收，因此无助益于光伏电子元件的电力产生。
经过数年的发展，太阳能电池已获致不同程度的成功。单接合太阳能电池虽具有效果，但无法达到多接合太阳能电池的效能及转换功率。不幸的，多接合及单接合太阳能电池由不同材料所构成，仅能捕捉部分的太阳光并将的转换为电力。以非晶硅及其合金制作的多接合太阳能电池具有宽且低的光能隙的内层(optical bandgap intrinsici-layers)，如氢化非晶硅碳及氢化非晶硅锗。非晶硅太阳能电池具有较高的开路电压及低电流，相对捕捉太阳光谱中波长范围介于400至900纳米(nm)间的光波并转换为电力。
因此，对于大范围、低成本的光伏电子元件应用，氢化非晶硅基的太阳能电池技术是目前的首选。如何应用非晶硅于光伏电子元件仍然是目前的课题之一，亦为发展高效率电子元件的解决方案。
发明内容
本发明之一目的是提供一种串叠式太阳能电池，具有一种非晶硅太阳能电池，设置于一种非硅基太阳能电池之上，非晶硅层能够吸收波长介于200至600纳米的入射光。
本发明的另一目的是提供一种串叠式太阳能电池，于非硅基太阳能电池的入射面上，设置一种非晶硅基的叠层结构，此叠层非晶硅基太阳能电池可设计为与入射角度低相关的抗反射层。
因此，本发明之一实施例是提供一种串叠式太阳能电池结构，其具有一非硅基的底层太阳能电池，及一非晶硅基的顶层太阳能电池的叠层，其设置于非硅基的底层太阳能电池之上。
通过上述技术特征，本发明设在底层太阳能电池上的非晶硅层对于光能介于2.7到4电子伏特(eV)具有较佳的效果。
附图说明
图1根据本发明一实施例的串叠式太阳能电池的结构剖视图。
图2根据本发明一实施例的非晶硅的光吸收图谱。
图中符号说明
100        太阳光
101        主动材料层
102        底层电池基板
103、10    导体层
105        导电界面结构
106        非晶硅层
具体实施方式
在描述本发明之前先定义专门用词，需要说明的是此些专门用词完全适用于本说明书(application)。
请参考图1，根据本发明的精神，一种串叠式太阳能电池结构包含一叠层的顶层太阳能电池设置于一底层太阳能电池之上，于一实施例中，一p-n单接合型包含在一底层电池基板(bottom-cell substrate)102上设置具有单光能隙(single optical bandgap)之一主动材料层101。可以选择的，p-n型及p-i-n型包含在底层电池基板102上设置具有多光能隙(multiple optical bandgaps)的多层的主动材料层101。可以理解的是，在主动材料层101与底层电池基板102间可包含其它的叠层，例如缓冲层，但本发明不限制于上述。
于一实施例中，底层电池基板102可以是一砷化镓基板。可以理解的是，此处的”砷化镓”作为基板是基于其半导体结构，故凡第III-V族二元半导体材料皆可作为此半导体材料，只要其成份与此砷化镓相对应。需要说明的是，某些延伸应用(deviation)，其能满足电子元件的需求或有不必要的掺杂，如铝等，抑即允许加入原有的砷化镓的制程。对于其它为特殊需求(anticipated need)的掺杂及较不明显的修正亦应被允许，其中砷及镓的结合至少占基板组成的95％。此外，需要特别提出说明的是，所谓”基板”应被理解为主动层下的任何材料，例如，镜射层、波导层、覆盖层及任何其它叠层，该叠层为主动层两倍以上的厚度。
接着说明，于一实施例中，主动材料层101作为一光吸收层。对于实际的结构而言，主动材料层101可规划为在底层电池基板102上的一块状材料或一薄膜材料，主动材料层101是由单元素、多元素或化合物等所制成，化合物材料可以是III-V族或II-VI族的二元半导体材料，如砷化铝(AlAs)、砷化镓铝(AlGaAs)、砷化镓(GaAs)、磷化铟(InP)、砷化镓铟(InGaAs)、硫化铜/硫化锌镉(Cu2S/(Zn，Cd)S)、硒化铟铜/硫化锌镉(CuInSe/(Zn，Cd)S)及碲化镉/n型硫化镉(CdTe/n-CdS)等等…，又，主动材料层101亦可以是单质材质所制成，如锗(Ge)。
可选择的，主动材料层101可以是铜铟镓硒酸盐(Copper IndiumGallium Selenide，CIGS)所制成的多层薄膜的复合物，此处的”CIGS”是指一薄膜复合物的组成，其包含黄铜矿半导体，如二硒化铟铜(CuInSe2)、二硒化镓铜(CuGaSe2)及二硒化铟镓铜(CuInxGa1-xSe2)的薄膜。另一实施例中，主动材料层101是以吸光染料(light-absorbing dyes)所制成，如在二氧化钛纳米微粒的半渗透叠层的敏染性的钌有机金属染料(dye-sensitized Ruthenium organometallic dye)等。又此主动材料层101亦可以是有机物/聚合物材料所制成，例如有机半导体，像是聚合物及小分子化合物，如聚苯乙烯化合物(polyphenylene vinylene)、铜苯二甲蓝(copper phthalocyanine)、含碳的富勒烯(carbon fullerenes)。因此，本发明的实施例中的底层太阳能电池可以是任何合适的非硅基太阳能电池，如锗基太阳能电池(Ge-based solar cell)、III-V族二元半导体太阳能电池、II-VI族二元半导体太阳能电池、染料太阳能电池(dye solar cell，DSC)、有机太阳能电池或CIGS太阳能电池。
根据本发明的精神，掺杂、无掺杂或其结合之一或多层非晶硅层106可设置于底层太阳能电池上，例如，一导电界面结构105被设置在非晶硅层106之间。本实施例中，一或多层非晶硅层106可以是单p-n接合型或p-i-n接合型，因此，非晶硅层106可包含其中的n型掺杂部份、p型掺杂部份及无掺杂部份。这里的”非晶硅”应被理解为非晶硅材料及非晶硅基材料，例如，此处的非晶硅层106可为氢化非晶硅(a-Si:H)、氢化非晶硅碳(a-SiC:H)、氢化非晶硅锗(a-SiGe:H)或氢化非晶硅碳锗(a-SiGeC:H)，但不限制于上述的材料。
导电界面结构105可设置在非晶硅层106与主动材料层101之间，于一实施例中，导电界面结构105可以是半导体穿隧接合，如砷化镓穿隧接合，可选择的导电界面结构105，如透明导电氧化物，可包含氧化铟锡(ITO)或是氧化锌(ZnO)等，又导电界面结构105亦可为一非常薄的金属薄膜，如金(Au)。更进一步，顶层太阳能电池及底太阳电池的叠层外侧为导体层103、104作为连接端，如透明导电层(ITO，ZnO)或金属层。
因此，当太阳光100照射在串叠式太阳能电池结构时，短波长的太阳光100，如波长介于200到600纳米的紫外光(UV)，首先被顶层太阳能电池所吸收，然后可见光波长范围的太阳光100被非硅基太阳能电池所吸收。另外，为了底层太阳能电池，吸收短波长太阳光的顶层太阳能电池可被设计为一抗反射层。
于一实施例中，电浆辅助化学气相沉积法(plasma enhancedchemical vapor deposition，PECVD)可被应用于制作掺杂或无掺杂的非晶硅层106。非晶硅层106对于吸收波长范围约介于350到450纳米的短波长入射光具有较佳的效果，如图2所示。此外，非晶硅层106的光吸收与入射光角度的相关性低且抗反射，因此，该非晶硅层106可设置在底层太阳能电池之前，以吸收底层太阳能电池所不易吸收的短波长入射光。本实施例中，设在底层太阳能电池上的非晶硅层106对于光能介于2.7到4电子伏特(eV)具有较佳的效果。
以上所述的实施例仅为说明本发明的技术思想及特点，其目的在使熟习此项技艺的人士能够了解本发明的内容并据以实施，当不能以的限定本发明的专利范围，即大凡依本发明所揭示的精神所作的均等变化或修饰，仍应涵盖在本发明的专利范围内。

Claims (25)

1.一种串叠式太阳能电池结构，包含一底层太阳能电池，一顶层太阳能电池设置于该底层太阳能电池之上，其中该顶层太阳能电池为一非晶硅基太阳能电池，且太阳光入射于该非晶硅基太阳能电池上。
2.如权利要求1所述的串叠式太阳能电池结构，更包含一导电界面，该界面设置于该底层太阳能电池与该顶层太阳能电池之间。
3.如权利要求2所述的串叠式太阳能电池结构，其中该导电界面由一透明导电氧化物所制造。
4.如权利要求2所述的串叠式太阳能电池结构，其中该导电界面为一穿隧接合结构。
5.如权利要求2所述的串叠式太阳能电池结构，其中该导电界面为一金属材料薄膜。
6.如权利要求1所述的串叠式太阳能电池结构，其中该非晶硅基太阳能电池为一p-n型接合结构。
7.如权利要求1所述的串叠式太阳能电池结构，其中该非晶硅基太阳能电池为一p-i-n型接合结构。
8.如权利要求1所述的串叠式太阳能电池结构，其中该非晶硅基太阳能电池包含n型及p型掺杂的非晶硅层。
9.如权利要求1所述的串叠式太阳能电池结构，其中该非晶硅基太阳能电池包含一无掺杂的非晶硅层。
10.如权利要求1所述的串叠式太阳能电池结构，其中该非晶硅基太阳能电池由氢化非晶硅a-Si:H、氢化非晶硅碳a-SiC:H、氢化非晶硅锗a-SiGe:H或氢化非晶硅碳锗a-SiGeC:H的材料所制成。
11.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一锗基材料所制成的一吸光材料。
12.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一III-V族二元半导体材料所制成的一吸光材料。
13.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一II-VI族二元半导体材料所制成的一吸光材料。
14.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一吸光材料，由一有机化合物材料所制成。
15.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一钌有机金属染料所制成的一吸光材料。
16.如权利要求1所述的串叠式太阳能电池结构，其中该底层太阳能电池包含一铜铟镓硒酸盐所制成的一吸光材料。
17.一种串叠式太阳能电池结构，包含一非硅基太阳能电池及设置于该非硅基太阳能电池上的一非晶硅基太阳能电池，其中该非晶硅基太阳能电池吸收光波波长介于200至600纳米间的太阳光。
18.如权利要求17所述的串叠式太阳能电池结构，更包含一透明导电氧化物设置于该非硅基太阳能电池置与该非晶硅基太阳能电池之间。
19.如权利要求17所述的串叠式太阳能电池结构，更包含一穿隧接合结构设置于该非硅基太阳能电池置与该非晶硅基太阳能电池之间。
20.如权利要求17所述的串叠式太阳能电池结构，更包含一金属材料薄膜设置于该非硅基太阳能电池置与该非晶硅基太阳能电池之间。
21.如权利要求17所述的串叠式太阳能电池结构，其中该非硅基太阳能电池包含一锗基太阳能电池。
22.如权利要求17所述的串叠式太阳能电池结构，其中该非硅基太阳能电池包含一III-V或一II-VI族二元半导体太阳能电池。
23.如权利要求17所述的串叠式太阳能电池结构，其中该非硅基太阳能电池包含一有机化合物太阳能电池。
24.如权利要求17所述的串叠式太阳能电池结构，其中该非硅基太阳能电池包含一染料太阳能电池。
25.如权利要求17所述的串叠式太阳能电池结构，其中该非硅基太阳能电池包含一铜铟镓硒酸盐太阳能电池。
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