CN101189706A - 半导体用研磨剂 - Google Patents

半导体用研磨剂 Download PDF

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Publication number
CN101189706A
CN101189706A CNA2006800195183A CN200680019518A CN101189706A CN 101189706 A CN101189706 A CN 101189706A CN A2006800195183 A CNA2006800195183 A CN A2006800195183A CN 200680019518 A CN200680019518 A CN 200680019518A CN 101189706 A CN101189706 A CN 101189706A
Authority
CN
China
Prior art keywords
abrasive
polishing
concentration
semiconductor
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800195183A
Other languages
English (en)
Chinese (zh)
Inventor
金喜则
吉田伊织
中沢伯人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Seimi Chemical Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
AGC Seimi Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, AGC Seimi Chemical Ltd filed Critical Asahi Glass Co Ltd
Publication of CN101189706A publication Critical patent/CN101189706A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2006800195183A 2005-06-06 2006-05-12 半导体用研磨剂 Pending CN101189706A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005165768A JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤
JP165768/2005 2005-06-06

Publications (1)

Publication Number Publication Date
CN101189706A true CN101189706A (zh) 2008-05-28

Family

ID=37498261

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800195183A Pending CN101189706A (zh) 2005-06-06 2006-05-12 半导体用研磨剂

Country Status (7)

Country Link
US (1) US20080086950A1 (https=)
EP (1) EP1890321A1 (https=)
JP (1) JP2006339594A (https=)
KR (1) KR20080012864A (https=)
CN (1) CN101189706A (https=)
TW (1) TW200712185A (https=)
WO (1) WO2006132055A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102888208A (zh) * 2011-07-20 2013-01-23 日立化成工业株式会社 研磨剂及基板的研磨方法
CN102906213A (zh) * 2010-05-27 2013-01-30 横滨橡胶株式会社 液态凝固剂及补胎材料套件
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
WO2016101332A1 (zh) * 2014-12-23 2016-06-30 尹先升 一种化学机械抛光液
US9564337B2 (en) 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
CN107369618A (zh) * 2017-07-07 2017-11-21 上海华虹宏力半导体制造有限公司 晶圆的平坦化方法
CN108885986A (zh) * 2016-04-04 2018-11-23 环球晶圆日本股份有限公司 半导体基板的保护膜形成方法
CN111316399A (zh) * 2017-08-31 2020-06-19 胜高股份有限公司 半导体晶片的制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR20090049067A (ko) * 2006-09-11 2009-05-15 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
KR101075491B1 (ko) 2009-01-16 2011-10-21 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
WO2012032469A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
KR102514041B1 (ko) * 2015-12-09 2023-03-24 삼성전자주식회사 반도체 소자 제조 방법
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002198331A (ja) * 2000-12-26 2002-07-12 Jsr Corp 研磨方法
DE60322695D1 (de) * 2002-04-30 2008-09-18 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
JP2004123931A (ja) * 2002-10-03 2004-04-22 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906213A (zh) * 2010-05-27 2013-01-30 横滨橡胶株式会社 液态凝固剂及补胎材料套件
CN102906213B (zh) * 2010-05-27 2015-10-14 横滨橡胶株式会社 液态凝固剂及补胎材料套件
US9564337B2 (en) 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
CN102888208A (zh) * 2011-07-20 2013-01-23 日立化成工业株式会社 研磨剂及基板的研磨方法
CN102888208B (zh) * 2011-07-20 2015-02-25 日立化成工业株式会社 研磨剂及基板的研磨方法
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
WO2016101332A1 (zh) * 2014-12-23 2016-06-30 尹先升 一种化学机械抛光液
CN108885986A (zh) * 2016-04-04 2018-11-23 环球晶圆日本股份有限公司 半导体基板的保护膜形成方法
CN108885986B (zh) * 2016-04-04 2023-07-14 环球晶圆日本股份有限公司 半导体基板的保护膜形成方法
CN107369618A (zh) * 2017-07-07 2017-11-21 上海华虹宏力半导体制造有限公司 晶圆的平坦化方法
CN111316399A (zh) * 2017-08-31 2020-06-19 胜高股份有限公司 半导体晶片的制造方法
CN111316399B (zh) * 2017-08-31 2023-12-26 胜高股份有限公司 半导体晶片的制造方法

Also Published As

Publication number Publication date
JP2006339594A (ja) 2006-12-14
KR20080012864A (ko) 2008-02-12
WO2006132055A1 (ja) 2006-12-14
US20080086950A1 (en) 2008-04-17
EP1890321A1 (en) 2008-02-20
TW200712185A (en) 2007-04-01

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