KR20080012864A - 반도체용 연마제 - Google Patents

반도체용 연마제 Download PDF

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Publication number
KR20080012864A
KR20080012864A KR1020077025527A KR20077025527A KR20080012864A KR 20080012864 A KR20080012864 A KR 20080012864A KR 1020077025527 A KR1020077025527 A KR 1020077025527A KR 20077025527 A KR20077025527 A KR 20077025527A KR 20080012864 A KR20080012864 A KR 20080012864A
Authority
KR
South Korea
Prior art keywords
abrasive
polishing
semiconductors
additive
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077025527A
Other languages
English (en)
Korean (ko)
Inventor
요시노리 곤
이오리 요시다
노리히토 나카자와
Original Assignee
아사히 가라스 가부시키가이샤
에이지씨 세이미 케미칼 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아사히 가라스 가부시키가이샤, 에이지씨 세이미 케미칼 가부시키가이샤 filed Critical 아사히 가라스 가부시키가이샤
Publication of KR20080012864A publication Critical patent/KR20080012864A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020077025527A 2005-06-06 2006-05-12 반도체용 연마제 Withdrawn KR20080012864A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005165768A JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤
JPJP-P-2005-00165768 2005-06-06

Publications (1)

Publication Number Publication Date
KR20080012864A true KR20080012864A (ko) 2008-02-12

Family

ID=37498261

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077025527A Withdrawn KR20080012864A (ko) 2005-06-06 2006-05-12 반도체용 연마제

Country Status (7)

Country Link
US (1) US20080086950A1 (https=)
EP (1) EP1890321A1 (https=)
JP (1) JP2006339594A (https=)
KR (1) KR20080012864A (https=)
CN (1) CN101189706A (https=)
TW (1) TW200712185A (https=)
WO (1) WO2006132055A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR20090049067A (ko) * 2006-09-11 2009-05-15 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
KR101075491B1 (ko) 2009-01-16 2011-10-21 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP4784694B1 (ja) * 2010-05-27 2011-10-05 横浜ゴム株式会社 液状凝固剤およびタイヤパンクシール材セット
WO2012032469A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP6051632B2 (ja) * 2011-07-20 2016-12-27 日立化成株式会社 研磨剤及び基板の研磨方法
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN105778774A (zh) * 2014-12-23 2016-07-20 安集微电子（上海）有限公司 一种化学机械抛光液
KR102514041B1 (ko) * 2015-12-09 2023-03-24 삼성전자주식회사 반도체 소자 제조 방법
JP6602720B2 (ja) * 2016-04-04 2019-11-06 グローバルウェーハズ・ジャパン株式会社 半導体基板の保護膜形成方法
CN107369618B (zh) * 2017-07-07 2020-02-21 上海华虹宏力半导体制造有限公司 晶圆的平坦化方法
CN111316399B (zh) * 2017-08-31 2023-12-26 胜高股份有限公司 半导体晶片的制造方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002198331A (ja) * 2000-12-26 2002-07-12 Jsr Corp 研磨方法
DE60322695D1 (de) * 2002-04-30 2008-09-18 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
JP2004123931A (ja) * 2002-10-03 2004-04-22 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

Also Published As

Publication number Publication date
CN101189706A (zh) 2008-05-28
JP2006339594A (ja) 2006-12-14
WO2006132055A1 (ja) 2006-12-14
US20080086950A1 (en) 2008-04-17
EP1890321A1 (en) 2008-02-20
TW200712185A (en) 2007-04-01

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20071102

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid