CN101176161A - 使用相变材料存储器元件的非易失性内容可寻址存储器 - Google Patents
使用相变材料存储器元件的非易失性内容可寻址存储器 Download PDFInfo
- Publication number
- CN101176161A CN101176161A CNA2006800166509A CN200680016650A CN101176161A CN 101176161 A CN101176161 A CN 101176161A CN A2006800166509 A CNA2006800166509 A CN A2006800166509A CN 200680016650 A CN200680016650 A CN 200680016650A CN 101176161 A CN101176161 A CN 101176161A
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- line
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- phase change
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
WL | ML | BSL | 数据(32) | bBSL | b数据(32b) | |
写1 | 高 | VA | I复位 | 1(高R) | I置位 | 0(低R) |
写0 | 高 | VA | I置位 | 0(低R) | I复位 | 1(高R) |
读 | 高 | VA | I读 | I/0 | I读 | 0/1 |
WL | BSL | 数据(32) | bBSL | b数据(32b) | ML | |
预充电 | 高 | 高 | 1/0 | 高 | 0/1 | 高 |
搜索“0”&匹配 | 高 | 浮动,弱高 | 0(低R) | 低 | 1(高R) | 高 |
搜索“0”&失配 | 高 | 浮动,弱高 | 1(高R) | 低 | 0(低R) | 低 |
搜索“1”&匹配 | 高 | 低 | 0(低R) | 浮动,弱高 | 1(高R) | 高 |
搜索“1”&失配 | 高 | 低 | 1(高R) | 浮动,弱高 | 0(低R) | 低 |
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/172,473 US7319608B2 (en) | 2005-06-30 | 2005-06-30 | Non-volatile content addressable memory using phase-change-material memory elements |
US11/172,473 | 2005-06-30 | ||
PCT/US2006/008550 WO2007005067A1 (en) | 2005-06-30 | 2006-03-09 | Non-volatile content addressable memory using phase-change-material memory elements |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101176161A true CN101176161A (zh) | 2008-05-07 |
CN101176161B CN101176161B (zh) | 2012-08-08 |
Family
ID=37589273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800166509A Active CN101176161B (zh) | 2005-06-30 | 2006-03-09 | 使用相变材料存储器元件的非易失性内容可寻址存储器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7319608B2 (zh) |
EP (1) | EP1908076A4 (zh) |
JP (1) | JP4378425B2 (zh) |
CN (1) | CN101176161B (zh) |
TW (1) | TWI396198B (zh) |
WO (1) | WO2007005067A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101620884A (zh) * | 2008-06-30 | 2010-01-06 | 国际商业机器公司 | 使用相变器件的高密度内容寻址存储器 |
CN102341863A (zh) * | 2009-03-06 | 2012-02-01 | 国际商业机器公司 | 使用相变器件的三元内容可寻址存储器 |
CN104463187A (zh) * | 2014-10-22 | 2015-03-25 | 宁波力芯科信息科技有限公司 | 隶属函数发生器单元、阵列及模糊识别器 |
CN111373477A (zh) * | 2018-06-29 | 2020-07-03 | 桑迪士克科技有限责任公司 | 使用阈值可调整竖直晶体管的内容可寻址存储器及其形成方法 |
CN113012731A (zh) * | 2021-02-26 | 2021-06-22 | 西安微电子技术研究所 | 一种适用于大位宽cam的数据锁存电路结构 |
CN113593623A (zh) * | 2020-04-30 | 2021-11-02 | 慧与发展有限责任合伙企业 | 利用三端存储器件的模拟内容可寻址存储器 |
CN114743578A (zh) * | 2022-04-06 | 2022-07-12 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现三态内容可寻址存储器TCAM的方法 |
CN114758695A (zh) * | 2022-04-06 | 2022-07-15 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现多值内容可寻址存储器MCAM的方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7675765B2 (en) * | 2005-11-03 | 2010-03-09 | Agate Logic, Inc. | Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM |
DE102006010531A1 (de) * | 2006-03-07 | 2007-09-13 | Infineon Technologies Ag | Speichervorrichtung und Verfahren zum Betreiben einer solchen Speichervorrichtung |
KR100900199B1 (ko) * | 2006-09-19 | 2009-06-02 | 삼성전자주식회사 | 상변화 메모리를 이용하는 캠(ContentAddressable Memory ; CAM) 셀 및 캠 |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
US7881089B2 (en) | 2009-02-24 | 2011-02-01 | International Business Machines Corporation | Coding techniques for improving the sense margin in content addressable memories |
US8521952B2 (en) * | 2009-03-31 | 2013-08-27 | Micron Technology, Inc. | Hierarchical memory architecture with a phase-change memory (PCM) content addressable memory (CAM) |
US20100250798A1 (en) * | 2009-03-31 | 2010-09-30 | Sean Eilert | Hierarchical memory architecture with an interface to differing memory formats |
US7872889B2 (en) * | 2009-04-21 | 2011-01-18 | International Business Machines Corporation | High density ternary content addressable memory |
US7948782B2 (en) * | 2009-08-28 | 2011-05-24 | International Business Machines Corporation | Content addressable memory reference clock |
US20110051485A1 (en) * | 2009-08-28 | 2011-03-03 | International Business Machines Corporation | Content addressable memory array writing |
US8059438B2 (en) * | 2009-08-28 | 2011-11-15 | International Business Machines Corporation | Content addressable memory array programmed to perform logic operations |
US8054662B2 (en) * | 2009-08-28 | 2011-11-08 | International Business Machines Corporation | Content addressable memory array |
US9269042B2 (en) | 2010-09-30 | 2016-02-23 | International Business Machines Corporation | Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices |
US8497705B2 (en) | 2010-11-09 | 2013-07-30 | Macronix International Co., Ltd. | Phase change device for interconnection of programmable logic device |
JP5907524B2 (ja) * | 2011-02-25 | 2016-04-26 | 国立大学法人東北大学 | 不揮発機能メモリ装置 |
US8729545B2 (en) | 2011-04-28 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US8908407B1 (en) * | 2011-07-30 | 2014-12-09 | Rambus Inc. | Content addressable memory (“CAM”) |
US8446748B2 (en) | 2011-08-04 | 2013-05-21 | International Business Machines Corporation | Content addressable memories with wireline compensation |
US9754668B1 (en) * | 2016-03-03 | 2017-09-05 | Flashsilicon Incorporation | Digital perceptron |
US10229738B2 (en) | 2017-04-25 | 2019-03-12 | International Business Machines Corporation | SRAM bitline equalization using phase change material |
CN111128278B (zh) | 2018-10-30 | 2021-08-27 | 华为技术有限公司 | 内容寻址存储器、数据处理方法及网络设备 |
US11031079B1 (en) | 2019-11-27 | 2021-06-08 | Flashsilicon Incorporation | Dynamic digital perceptron |
US11600320B2 (en) | 2019-12-17 | 2023-03-07 | Flashsilicon Incorporation | Perpectual digital perceptron |
TWI766706B (zh) * | 2020-08-26 | 2022-06-01 | 旺宏電子股份有限公司 | 三態內容可定址記憶體以及用於其之決策產生方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01307095A (ja) * | 1988-06-01 | 1989-12-12 | Mitsubishi Electric Corp | 不揮発性cam |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
KR960013022B1 (ko) * | 1991-09-11 | 1996-09-25 | 가와사끼 세이데쯔 가부시끼가이샤 | 반도체 집적회로 |
US6317349B1 (en) * | 1999-04-16 | 2001-11-13 | Sandisk Corporation | Non-volatile content addressable memory |
US6191973B1 (en) * | 1999-09-27 | 2001-02-20 | Motorola Inc. | Mram cam |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6639818B1 (en) * | 2000-03-16 | 2003-10-28 | Silicon Storage Technology, Inc. | Differential non-volatile content addressable memory cell and array |
US6269016B1 (en) * | 2000-06-19 | 2001-07-31 | Motorola Inc. | MRAM cam |
US6759267B2 (en) * | 2002-07-19 | 2004-07-06 | Macronix International Co., Ltd. | Method for forming a phase change memory |
KR100455392B1 (ko) * | 2002-08-10 | 2004-11-06 | 삼성전자주식회사 | 동작속도를 향상시키고 칩 면적을 감소시킬 수 있는워드라인 드라이버 회로를 구비하는 캐쉬 메모리장치 및이의 워드라인 구동방법 |
DE60227534D1 (de) * | 2002-11-18 | 2008-08-21 | St Microelectronics Srl | Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen |
US6912146B2 (en) * | 2002-12-13 | 2005-06-28 | Ovonyx, Inc. | Using an MOS select gate for a phase change memory |
KR100479810B1 (ko) * | 2002-12-30 | 2005-03-31 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 |
JP2004288282A (ja) * | 2003-03-20 | 2004-10-14 | Fujitsu Ltd | 半導体装置 |
JP3752589B2 (ja) * | 2003-06-25 | 2006-03-08 | 松下電器産業株式会社 | 不揮発性メモリを駆動する方法 |
KR100532462B1 (ko) * | 2003-08-22 | 2005-12-01 | 삼성전자주식회사 | 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로 |
EP1526548A1 (en) * | 2003-10-22 | 2005-04-27 | STMicroelectronics S.r.l. | Improved bit line discharge method and circuit for a semiconductor memory |
EP1526547B1 (en) * | 2003-10-22 | 2010-12-22 | STMicroelectronics Srl | A content addressable memory cell |
KR100569549B1 (ko) * | 2003-12-13 | 2006-04-10 | 주식회사 하이닉스반도체 | 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치 |
US7499303B2 (en) * | 2004-09-24 | 2009-03-03 | Integrated Device Technology, Inc. | Binary and ternary non-volatile CAM |
-
2005
- 2005-06-30 US US11/172,473 patent/US7319608B2/en active Active
-
2006
- 2006-03-09 EP EP06737703A patent/EP1908076A4/en not_active Withdrawn
- 2006-03-09 CN CN2006800166509A patent/CN101176161B/zh active Active
- 2006-03-09 JP JP2008519262A patent/JP4378425B2/ja not_active Expired - Fee Related
- 2006-03-09 WO PCT/US2006/008550 patent/WO2007005067A1/en active Application Filing
- 2006-06-26 TW TW095122923A patent/TWI396198B/zh not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101620884A (zh) * | 2008-06-30 | 2010-01-06 | 国际商业机器公司 | 使用相变器件的高密度内容寻址存储器 |
CN102341863A (zh) * | 2009-03-06 | 2012-02-01 | 国际商业机器公司 | 使用相变器件的三元内容可寻址存储器 |
CN104463187A (zh) * | 2014-10-22 | 2015-03-25 | 宁波力芯科信息科技有限公司 | 隶属函数发生器单元、阵列及模糊识别器 |
CN104463187B (zh) * | 2014-10-22 | 2018-11-16 | 宁波力芯科信息科技有限公司 | 综合隶属函数发生器阵列及模糊识别器 |
CN111373477A (zh) * | 2018-06-29 | 2020-07-03 | 桑迪士克科技有限责任公司 | 使用阈值可调整竖直晶体管的内容可寻址存储器及其形成方法 |
CN111373477B (zh) * | 2018-06-29 | 2024-03-01 | 桑迪士克科技有限责任公司 | 使用阈值可调整竖直晶体管的内容可寻址存储器及其形成方法 |
CN113593623A (zh) * | 2020-04-30 | 2021-11-02 | 慧与发展有限责任合伙企业 | 利用三端存储器件的模拟内容可寻址存储器 |
CN113593623B (zh) * | 2020-04-30 | 2023-03-31 | 慧与发展有限责任合伙企业 | 利用三端存储器件的模拟内容可寻址存储器 |
CN113012731B (zh) * | 2021-02-26 | 2023-05-09 | 西安微电子技术研究所 | 一种适用于大位宽cam的数据锁存电路结构 |
CN113012731A (zh) * | 2021-02-26 | 2021-06-22 | 西安微电子技术研究所 | 一种适用于大位宽cam的数据锁存电路结构 |
CN114743578A (zh) * | 2022-04-06 | 2022-07-12 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现三态内容可寻址存储器TCAM的方法 |
CN114758695A (zh) * | 2022-04-06 | 2022-07-15 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现多值内容可寻址存储器MCAM的方法 |
CN114758695B (zh) * | 2022-04-06 | 2024-05-17 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现多值内容可寻址存储器MCAM的方法 |
CN114743578B (zh) * | 2022-04-06 | 2024-05-17 | 北京大学 | 基于铁电隧穿场效应晶体管FeTFET实现三态内容可寻址存储器TCAM的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7319608B2 (en) | 2008-01-15 |
EP1908076A1 (en) | 2008-04-09 |
JP4378425B2 (ja) | 2009-12-09 |
CN101176161B (zh) | 2012-08-08 |
TW200741707A (en) | 2007-11-01 |
US20070002608A1 (en) | 2007-01-04 |
TWI396198B (zh) | 2013-05-11 |
WO2007005067A1 (en) | 2007-01-11 |
JP2008545221A (ja) | 2008-12-11 |
EP1908076A4 (en) | 2009-06-17 |
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