CN101162732B - 金属氧化物半导体场效应晶体管及其制作方法 - Google Patents
金属氧化物半导体场效应晶体管及其制作方法 Download PDFInfo
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CN101162732B true CN101162732B (zh) | 2010-11-03 |
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CN102110611B (zh) * | 2009-12-29 | 2013-04-10 | 中国科学院微电子研究所 | 具有改善的载流子迁移率的nmos的制造方法 |
US20130020632A1 (en) * | 2011-07-18 | 2013-01-24 | Disney Donald R | Lateral transistor with capacitively depleted drift region |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |