CN101161748A - 用于形成钨图案的浆料组合物以及使用其制造半导体器件的方法 - Google Patents

用于形成钨图案的浆料组合物以及使用其制造半导体器件的方法 Download PDF

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Publication number
CN101161748A
CN101161748A CNA2007101525469A CN200710152546A CN101161748A CN 101161748 A CN101161748 A CN 101161748A CN A2007101525469 A CNA2007101525469 A CN A2007101525469A CN 200710152546 A CN200710152546 A CN 200710152546A CN 101161748 A CN101161748 A CN 101161748A
Authority
CN
China
Prior art keywords
tungsten
slurry
insulating film
polishing
paste compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101525469A
Other languages
English (en)
Chinese (zh)
Inventor
金锡主
朴烋范
梁基洪
晋圭安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technology Semi Chemical Co Ltd
SK Hynix Inc
Original Assignee
Technology Semi Chemical Co Ltd
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technology Semi Chemical Co Ltd, Hynix Semiconductor Inc filed Critical Technology Semi Chemical Co Ltd
Publication of CN101161748A publication Critical patent/CN101161748A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNA2007101525469A 2006-09-27 2007-09-27 用于形成钨图案的浆料组合物以及使用其制造半导体器件的方法 Pending CN101161748A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20060094347 2006-09-27
KR1020060094347 2006-09-27
KR1020070096133 2007-09-20

Publications (1)

Publication Number Publication Date
CN101161748A true CN101161748A (zh) 2008-04-16

Family

ID=39296738

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101525469A Pending CN101161748A (zh) 2006-09-27 2007-09-27 用于形成钨图案的浆料组合物以及使用其制造半导体器件的方法

Country Status (2)

Country Link
KR (1) KR100948814B1 (ko)
CN (1) CN101161748A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102477258A (zh) * 2010-11-26 2012-05-30 安集微电子（上海）有限公司 一种化学机械抛光液
CN103194148A (zh) * 2013-04-23 2013-07-10 清华大学 化学机械抛光水性组合物及其用途
CN104979277A (zh) * 2014-04-11 2015-10-14 中国科学院微电子研究所 一种化学机械平坦化的工艺方法
CN106883766A (zh) * 2015-10-02 2017-06-23 优备材料有限公司 钨抛光浆料和抛光衬底的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101335946B1 (ko) 2011-08-16 2013-12-04 유비머트리얼즈주식회사 텅스텐 연마용 ｃｍｐ 슬러리 조성물
WO2013024971A2 (ko) * 2011-08-16 2013-02-21 (주)유비프리시젼 텅스텐 연마용 ｃｍｐ 슬러리 조성물
KR101409889B1 (ko) 2013-12-27 2014-06-19 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
KR101741707B1 (ko) 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
KR102544643B1 (ko) 2015-12-23 2023-06-19 솔브레인 주식회사 연마 슬러리 조성물 및 이를 이용한 연마방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200533735A (en) * 2004-03-24 2005-10-16 Fujimi Inc Polishing composition and polishing method
CN1737885A (zh) * 2004-08-18 2006-02-22 三星电子株式会社 浆料组合物、制备浆料组合物的方法以及使用浆料组合物抛光物体的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
JP2006049479A (ja) * 2004-08-03 2006-02-16 Nitta Haas Inc 化学的機械研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200533735A (en) * 2004-03-24 2005-10-16 Fujimi Inc Polishing composition and polishing method
CN1737885A (zh) * 2004-08-18 2006-02-22 三星电子株式会社 浆料组合物、制备浆料组合物的方法以及使用浆料组合物抛光物体的方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102477258A (zh) * 2010-11-26 2012-05-30 安集微电子（上海）有限公司 一种化学机械抛光液
CN103194148A (zh) * 2013-04-23 2013-07-10 清华大学 化学机械抛光水性组合物及其用途
CN103194148B (zh) * 2013-04-23 2014-10-22 清华大学 化学机械抛光水性组合物及其用途
CN104979277A (zh) * 2014-04-11 2015-10-14 中国科学院微电子研究所 一种化学机械平坦化的工艺方法
CN104979277B (zh) * 2014-04-11 2019-06-14 中国科学院微电子研究所 一种40nm以下尺寸的器件的化学机械平坦化的工艺方法
CN106883766A (zh) * 2015-10-02 2017-06-23 优备材料有限公司 钨抛光浆料和抛光衬底的方法
CN106883766B (zh) * 2015-10-02 2021-08-27 优备材料有限公司 钨抛光浆料和抛光衬底的方法

Also Published As

Publication number Publication date
KR100948814B1 (ko) 2010-03-24
KR20080028790A (ko) 2008-04-01

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