CN101151712A - 从衬底去除氧化物的方法和系统 - Google Patents

从衬底去除氧化物的方法和系统 Download PDF

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Publication number
CN101151712A
CN101151712A CNA2006800108240A CN200680010824A CN101151712A CN 101151712 A CN101151712 A CN 101151712A CN A2006800108240 A CNA2006800108240 A CN A2006800108240A CN 200680010824 A CN200680010824 A CN 200680010824A CN 101151712 A CN101151712 A CN 101151712A
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substrate
silicon
temperature
gas
containing gas
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CNA2006800108240A
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Chinese (zh)
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安东尼·迪朴
艾伦·约翰·利思
吴昇昊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNA2006800108240A 2005-03-31 2006-03-23 从衬底去除氧化物的方法和系统 Pending CN101151712A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/094,462 US7524769B2 (en) 2005-03-31 2005-03-31 Method and system for removing an oxide from a substrate
US11/094,462 2005-03-31

Publications (1)

Publication Number Publication Date
CN101151712A true CN101151712A (zh) 2008-03-26

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CNA2006800108240A Pending CN101151712A (zh) 2005-03-31 2006-03-23 从衬底去除氧化物的方法和系统

Country Status (5)

Country Link
US (1) US7524769B2 (enExample)
JP (1) JP5015134B2 (enExample)
KR (1) KR101238152B1 (enExample)
CN (1) CN101151712A (enExample)
WO (1) WO2006104819A2 (enExample)

Cited By (3)

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CN102326229A (zh) * 2009-03-05 2012-01-18 应用材料公司 沉积具有低界面污染的层的方法
CN103597581A (zh) * 2011-06-10 2014-02-19 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN107723790A (zh) * 2016-08-12 2018-02-23 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法

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US20080153266A1 (en) * 2006-12-21 2008-06-26 Interuniversitair Microeletronica Centrum (Imec) Vzw Method to improve the selective epitaxial growth (seg) process
US20080242062A1 (en) * 2007-03-31 2008-10-02 Lucent Technologies Inc. Fabrication of diverse structures on a common substrate through the use of non-selective area growth techniques
US8852674B2 (en) * 2010-11-12 2014-10-07 Applied Materials, Inc. Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers
US20140011339A1 (en) * 2012-07-06 2014-01-09 Applied Materials, Inc. Method for removing native oxide and residue from a germanium or iii-v group containing surface
CN107574476A (zh) * 2013-08-09 2018-01-12 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
KR102323040B1 (ko) 2013-09-25 2021-11-08 에베 그룹 에. 탈너 게엠베하 기판 본딩 장치 및 방법
US9735009B2 (en) * 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US9653291B2 (en) 2014-11-13 2017-05-16 Applied Materials, Inc. Method for removing native oxide and residue from a III-V group containing surface
US20170018427A1 (en) * 2015-07-15 2017-01-19 Applied Materials, Inc. Method of selective epitaxy
US9972511B2 (en) 2015-10-01 2018-05-15 Applied Materials, Inc. Substrate processing apparatus and methods
US20220108888A1 (en) * 2020-10-04 2022-04-07 Applied Materials, Inc. Selective Deposition of Germanium

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102326229A (zh) * 2009-03-05 2012-01-18 应用材料公司 沉积具有低界面污染的层的方法
CN102326229B (zh) * 2009-03-05 2014-03-12 应用材料公司 沉积具有低界面污染的层的方法
TWI508150B (zh) * 2009-03-05 2015-11-11 Applied Materials Inc 用於沉積具有低界面汙染之層的方法
CN103597581A (zh) * 2011-06-10 2014-02-19 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN103597581B (zh) * 2011-06-10 2016-12-21 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN107723790A (zh) * 2016-08-12 2018-02-23 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法
CN107723790B (zh) * 2016-08-12 2020-07-07 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法

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US20060228900A1 (en) 2006-10-12
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