CN101147242B - 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法 - Google Patents

半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法 Download PDF

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Publication number
CN101147242B
CN101147242B CN2006800094337A CN200680009433A CN101147242B CN 101147242 B CN101147242 B CN 101147242B CN 2006800094337 A CN2006800094337 A CN 2006800094337A CN 200680009433 A CN200680009433 A CN 200680009433A CN 101147242 B CN101147242 B CN 101147242B
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CN
China
Prior art keywords
abrasive
polishing
water
grinding
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN2006800094337A
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English (en)
Chinese (zh)
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CN101147242A (zh
Inventor
吉田伊織
金喜則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Seimi Chemical Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
AGC Seimi Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, AGC Seimi Chemical Ltd filed Critical Asahi Glass Co Ltd
Publication of CN101147242A publication Critical patent/CN101147242A/zh
Application granted granted Critical
Publication of CN101147242B publication Critical patent/CN101147242B/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2006800094337A 2005-03-28 2006-02-27 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法 Expired - Lifetime CN101147242B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP092608/2005 2005-03-28
JP2005092608A JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
PCT/JP2006/303648 WO2006103858A1 (ja) 2005-03-28 2006-02-27 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
CN101147242A CN101147242A (zh) 2008-03-19
CN101147242B true CN101147242B (zh) 2010-11-17

Family

ID=37053126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800094337A Expired - Lifetime CN101147242B (zh) 2005-03-28 2006-02-27 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法

Country Status (7)

Country Link
US (1) US7695345B2 (enExample)
EP (1) EP1865546A4 (enExample)
JP (1) JP2006278522A (enExample)
KR (1) KR20070112778A (enExample)
CN (1) CN101147242B (enExample)
TW (1) TW200716728A (enExample)
WO (1) WO2006103858A1 (enExample)

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DE60330971D1 (de) * 2002-07-22 2010-03-04 Asahi Glass Co Ltd Halbleiterschleif prozess zu seiner herstellung und polierverfahren
WO2006098141A1 (ja) * 2005-03-16 2006-09-21 Asahi Glass Company, Limited 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
WO2008032680A1 (en) * 2006-09-11 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
EP2063461A4 (en) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd POLISHING AGENT FOR AN INTEGRATED SEMICONDUCTOR ELEMENTS, POLISHING METHOD AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR EQUIPMENT
TW201023259A (en) * 2008-11-07 2010-06-16 Asahi Glass Co Ltd Abrasive, polishing method, method for manufacturing semiconductor integrated circuit device
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
KR102892429B1 (ko) * 2014-12-16 2025-11-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
JP6708951B2 (ja) * 2016-03-28 2020-06-10 日立化成株式会社 研磨液及び研磨方法
WO2019131885A1 (ja) * 2017-12-27 2019-07-04 ニッタ・ハース株式会社 研磨用スラリー
CN113004799A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

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JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
JP3649279B2 (ja) * 1998-12-25 2005-05-18 日立化成工業株式会社 基板の研磨方法
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2001185514A (ja) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
JP2003100752A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体装置の製造方法
US6682575B2 (en) * 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
KR20050006246A (ko) 2002-05-14 2005-01-15 이 아이 듀폰 디 네모아 앤드 캄파니 수용성 폴리아미드로 제조된 포장재 및 용기 및 이들의제조 방법
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
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JP2004277474A (ja) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
JP2005005501A (ja) * 2003-06-12 2005-01-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
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JP2005038924A (ja) * 2003-07-16 2005-02-10 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨液
JP2005048125A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
JP2005048122A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
WO2006086265A2 (en) * 2005-02-07 2006-08-17 Applied Materials, Inc. Method and composition for polishing a substrate
WO2006098141A1 (ja) * 2005-03-16 2006-09-21 Asahi Glass Company, Limited 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
EP1865546A4 (en) 2009-11-25
JP2006278522A (ja) 2006-10-12
CN101147242A (zh) 2008-03-19
TW200716728A (en) 2007-05-01
KR20070112778A (ko) 2007-11-27
WO2006103858A1 (ja) 2006-10-05
US20080085663A1 (en) 2008-04-10
EP1865546A1 (en) 2007-12-12
US7695345B2 (en) 2010-04-13

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Address after: Tokyo, Japan

Co-patentee after: AGC SEIMI CHEMICAL Co.,Ltd.

Patentee after: ASAHI GLASS Co.,Ltd.

Address before: Tokyo, Japan

Co-patentee before: AGC SEIMI CHEMICAL Co.,Ltd.

Patentee before: ASAHI GLASS Co.,Ltd.

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CX01 Expiry of patent term

Granted publication date: 20101117

CX01 Expiry of patent term