CN101124665A - 制造氮化栅极电介质的方法 - Google Patents

制造氮化栅极电介质的方法 Download PDF

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CN101124665A
CN101124665A CNA2006800015284A CN200680001528A CN101124665A CN 101124665 A CN101124665 A CN 101124665A CN A2006800015284 A CNA2006800015284 A CN A2006800015284A CN 200680001528 A CN200680001528 A CN 200680001528A CN 101124665 A CN101124665 A CN 101124665A
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dielectric layer
annealing
dielectric
grid
nitrogenize
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CN100539042C (zh
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林尚羽
保罗·A·格鲁德斯基
骆典应
奥路班密·O·艾蒂图图
星·H·曾
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NXP USA Inc
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Abstract

用氮化步骤(16)和退火处理栅极电介质(14)。此后，执行另外的氮化步骤(20)和退火。第二氮化(20)和退火导致最终形成的晶体管(60)的栅极漏电流密度和电流驱动之间关系的改善。

Description

制造氮化栅极电介质的方法
技术领域
本发明涉及制造半导体器件，并且更特别地涉及制造具有氮化栅极电介质的半导体器件结构。
背景技术
随着半导体器件结构继续变得越来越小，栅极电介质也变得越来越薄。在图1的半对数图中说明了关于这点的困难，其中图1显示当有效栅极度Tox(作为从栅极到沟道的电测量值的有效栅极氧化物厚度)降低时，通过栅极电介质的漏电流密度Jg显著地增加。在较低的栅极厚度下，2埃的轻微变化引起漏电流密度增加10倍。降低栅极电介质厚度的主要动机在于提高晶体管的电流驱动Ion。电流驱动和栅极厚度一般地具有以下的对应性：厚度降低10％，电流驱动增加10％。这样，对于厚度降低2埃是大约10％的情况，驱动电流只有10％的增加，但漏电流密度有10倍的增加。因此，当栅极电介质厚度已进入20-30埃的范围时，已变得越来越难以找到一种方法，以通过栅极电介质厚度的降低来实现电流驱动的增加，同时将漏电流维持在合理水平上。
因此，需要找到一种方法，以实现电流驱动的增加，同时将栅极漏电流维持在合理水平上。
附图说明
作为例子通过附图说明本发明，但是本发明不被附图所限制，其中相似参考符号指示类似元素，并且其中：
图1是有效栅极厚度对栅极漏电流密度的曲线；
图2是在根据发明第一实施方案的过程的某个阶段中的器件结构的横截面；
图3是在图2中所示之后的过程的某个阶段中的图2的器件结构的横截面；
图4是在图3中所示之后的过程的某个阶段中的图3的器件结构的横截面；
图5是在图4中所示之后的过程的某个阶段中的图4的器件结构的横截面；
图6是在图5中所示之后的处理的某个阶段中的图5的器件结构的横截面；
图7是在图6中所示之后的过程的某个阶段中的图6的器件结构的横截面；
图8是显示对应一个氮化和退火以及对应额外的氮化和退火的电流驱动对栅极漏电流密度的曲线；
图9是根据发明的第一实施方案的方法的流程图；
图10是在根据发明的第二实施方案的过程的某个阶段中的器件结构的横截面；
图11是在图10中所示之后的过程的某个阶段中的图10的器件结构的横截面；
图12是在图11中所示之后的过程的某个阶段中的图11的器件结构的横截面；
图13是在图12中所示之后的过程的某个阶段中的图12的器件结构的横截面；
技术人员应当认识到，图中的元素是为了简单和清楚而示例，因此不一定按比例画出。例如，可以相对于其他元素放大图中的某些元素的尺寸，以帮助改善本发明的实施方案的理解。
具体实施方式
在一个方面中，用氮化步骤和退火来处理栅极电介质。在此之后，执行额外的氮化步骤和退火。第二氮化和退火导致最终形成的晶体管的栅极漏电流密度和电流驱动之间关系的改善。参考附图和下面描述可以更好地理解这点。
图2中所示的是包括半导体衬底12和在衬底12上的栅极电介质14的器件结构10。衬底12优选地是硅，但可以是另外的半导体材料例如硅锗。半导体衬底12显示为体硅衬底，但也可以是SOI衬底。该例子中的栅极电介质14是在高温下生长的二氧化硅，并且厚度大约为12埃。这里的厚度是物理厚度，除非另外说明。
图3中所示的是在等离子体氮化步骤16之后的器件结构10，步骤16促使栅极电介质14改变成掺杂氮的栅极电介质18。优选地，通过等离子体来实现掺杂栅极电介质14以变成栅极电介质18，但是可以使用其他方法例如高炉或注入。通过高炉和注入掺杂氮的缺点在于在栅极电介质18和衬底12之间的界面处可能有比通过等离子体更多的氮。这种等离子体氮化的例子用于获得3～10个原子百分比的氮浓度。
图4中所示的是在氧气气氛中执行退火之后的器件结构10。这具有生长无氮的大约1埃的氧化物层19的效果。优选地在大约1000摄氏度下执行退火。示例的过程是在大约10托(Torr)下以大约250SCCM的流速施加氧气作为分子氧。作为选择，可以执行进一步的氧化物生长步骤，以制造更厚的氧化物层19。作为另一种可选方案，可以在惰性气氛例如N2或氩气中执行退火步骤，后面是氧化物生长步骤。在使用惰性气氛的情况下，不形成氧化物层19。在氧气气氛中退火与氧化物生长有些类似，因为它们都处于相对高的温度下，并且氧化物的形成是通过在栅极电介质层18和衬底12之间的界面处的氧化物生长。如果两者都执行，那么差异主要在于氧化物生长处于比退火相对低的温度下并且执行更长时间。与通过氮化和退火的图4的器件结构10类似的器件结构的形成已知具有降低栅极漏电流的优点但是以降低电流驱动为代价。这被认为是因为通过退火栅极氮化电介质，从界面中置换一部分氮，而在衬底和等离子体氮化物电介质层之间的界面处形成氧化物层，从而形成原子上更平滑的界面。
图4的器件结构10的形成不同于先前技术在于为了随后的氮化和退火做准备而制造图4的器件结构10。
图5中所示的是在执行等离子体氮化步骤20之后的器件结构10。这具有将氮的百分比增加额外的1～3个原子百分比的效果。例如，如果在图3的器件结构10中氮浓度是3个原子百分比，那么在图5的器件结构10中的浓度是大约4～6个百分比。该过程可以与在图3中所示的氮化步骤中使用的过程相同。
图6中所示的是在氧气气氛中退火之后的器件结构10，该退火形成基本上无氮的氧化物层23。优选地，在大约1100摄氏度下执行退火。示例的过程是在大约10托下以大约250SCCM的流速施加氧气作为分子氧。
图7中所示的是当晶体管使用栅极电介质22作为晶体管的栅极电介质时的器件结构10。晶体管包括在栅极电介质22上面的栅电极24、在栅极24周围的侧壁隔离器26、在衬底12中且在一侧与栅极24相邻的源极/漏极28，以及在衬底12中且在另一侧与栅极24相邻的源极/漏极30。
图8中所示的是电流驱动(Ion)对栅极漏电流密度(Jg)的曲线32和曲线34的图示。曲线32对应于单个氮化和退火以及无氮化和退火的情况。曲线34对应于图2-7中所示的额外氮化和退火的情况。从无氮化和退火的曲线到单个氮化和退火基本上无变化，只是沿着曲线32在降低漏电和降低电流驱动的方向上移动位置。第二氮化和退火促成从曲线32到曲线34的位移。这被认为是因为氮化的远离衬底12的进一步定域，以及在氧化物层23和衬底12之间的界面25处的基本上无氮界面。曲线34上的位置36具有与曲线32上的位置38相同的电流驱动但是具有比位置38更低的漏电流密度。类似地，曲线34上的位置39具有比位置40更低的漏电流密度，同时维持相同的电流驱动。
通过在与第一氮化和退火相同的条件下进行第二氮化和退火已发现图8中所描绘的这种改善。例如，在10毫托下以250SCCM氮气流速在350瓦特、20％占空系数、10千赫下执行15秒的两个氮化，以及在1000摄氏度、0.5托下以250SCCM氧气流速执行15秒的两个退火导致栅极漏电流密度大约70％的改善，同时保持驱动电流基本上相同。
图9中所示的是显示形成图7的器件结构10的处理步骤的流程图并提供图8中所描绘的好处。步骤42形成栅极电介质层。然后步骤44执行等离子体氮化。步骤46是优选地在氧气气氛中执行的退火。步骤48是形成更多栅极电介质的任选步骤。如果在氧气气氛中发生退火步骤，那么通常不需要执行步骤48。步骤50是优选地以与步骤44相同的方式执行的另一个氮化步骤。步骤52是优选地以与步骤46相同的方式执行的另一个退火步骤。在该流程中，在两个氮化/退火步骤之后，在步骤54中形成晶体管。在形成晶体管之前，氮化/退火步骤可以超过两个。
图10-13显示关于图2-7的可选实施方案。
图10中所示的是包括半导体衬底62和栅极电介质的器件结构60，其中该栅极电介质包括在衬底62上的界面氧化物层64以及可以是例如金属氧化物、金属硅酸盐、金属铝酸盐、金属氮氧化硅或金属镧酸盐的高K电介质层。衬底12优选地是硅，但可以是另外的半导体材料例如硅锗。半导体衬底62显示为体硅衬底，但也可以是SOI衬底。该例子中的高K电介质层66是通过原子层沉积(ALD)沉积的氧化铪。界面氧化物层64是当形成栅极电介质尤其是在硅上形成栅极电介质时作为实际问题总是存在的氧化物层。
图11中所示的是在等离子体氮化步骤68之后的器件结构60，步骤68促使高K电介质层66改变成掺杂氮的金属氧化物层70，以及促使界面氧化物层64改变成具有痕量氮存在的界面氧化物层72。优选地，通过等离子体来实现掺杂高K电介质66以变成高K电介质层70，但可以使用其他方法例如高炉和注入，只是具有先前所描述的缺点。这种等离子体氮化的例子用于获得3～10个原子百分比的氮浓度。然后是在氧气气氛中退火。优选地，大约在1000～1200摄氏度下执行退火。示例的过程是在大约10托下以大约250SCCM的流速施加氧气作为分子氧。作为选择，可以执行进一步的高K电介质沉积步骤以制造更厚的高K层70。与通过氮化和退火的图11的器件结构60类似的器件结构的形成是众所周知的，并且已知具有降低栅极漏电流的优点但是以降低电流驱动为代价。这被认为是因为通过退火栅极氮化电介质，从界面中置换一部分氮，而在衬底和等离子体氮化电介质层之间的界面处形成氧化物层，从而形成原子上更平滑的界面。
图11的器件结构60的形成不同于先前技术在于为了随后的氮化和退火做准备而制造图11的器件结构60。
图12中所示的是在执行等离子体氮化步骤20和氧气气氛中的退火之后的器件结构60。该过程可以与在图11中所示的氮化和退火步骤中使用的过程相同。这具有改变高K电介质层70和界面层72以分别形成高K电介质层76和界面氧化物层78的效果。层76和78构成栅极电介质80。
图13中所示的是当晶体管使用栅极电介质80作为晶体管的栅极电介质时的器件结构60。晶体管包括在栅极电介质80上面的栅电极82、在栅极82周围的侧壁隔离器84、在衬底62中且在一侧与栅极82相邻的源极/漏极86，以及在衬底62中且在另一侧与栅极82相邻的源极/漏极88。
这描述两次氮化/退火过程。所描述的氮化/退火步骤的次数可以超过两次。在金属氧化物例子中，多次氮化/退火步骤好于单次氮化退火的优点是氮分布的调节以及高K电介质质量的改善。
在前面说明书中，已关于具体实施方案描述了发明。但是，本领域技术人员应当认识到可以进行各种修改和改变而不背离下面的权利要求中所陈述的本发明的范围。描述了某些材料，但是这些可以改变。作为进一步的可选方案，描述了氧化铪作为示例的金属氧化物，但是可以使用其他高K电介质例如氧化锆或其他金属氧化物，例如氧氮镧铝也可以受益于该过程。因此，说明书和附图应当认为是说明性的而不是限制性的，并且所有这种修改打算包含在本发明的范围内。
已在上面关于具体实施方案描述了好处、其他优点以及问题的解决方案。但是，不应当将发生的或变得更显著的好处、优点、问题的解决方案以及可以促成任意好处、优点或解决方案的任意元素解释为任意或全部权利要求的关键的、必须的、或基本的特征或元素。如这里所使用的，术语“包括”，“包含”或其任意其他变化形式打算用来覆盖非排他的包含，使得包括一列元素的过程、方法、产品或装置不仅仅包括那些元素，而是可以包括没有明确列举的或这种过程、方法、产品或装置所固有的其他元素。

Claims (20)

1.一种形成栅极氮化电介质的方法，包括：
在衬底上面形成电介质层；
将电介质层暴露于等离子体氮化，以形成等离子体氮化电介质层；
通过退火栅极氮化电介质，以从衬底和等离子体氮化电介质层之间的界面中置换一部分氮，而在界面处形成氧化物层，从而形成原子上更平滑的界面；
再次将电介质层暴露于等离子体氮化，以添加更多的氮到等离子体氮化电介质层；以及
退火栅极氮化电介质，以通过进一步平滑界面来处理衬底和等离子体氮化电介质层之间的界面。
2.根据权利要求1的方法，还包括：
将电介质层形成为二氧化硅、金属氧化物、金属硅酸盐、金属铝酸盐之一，或预先确定金属的组合，或多种金属和氧化物、硅酸盐、镧酸盐或铝酸盐之一的组合。
3.根据权利要求2的方法，还包括：
将金属氧化物形成为氧化铪。
4.根据权利要求1的方法，其中形成氧化物层还包括：
通过在基本上500～1200度的温度下退火栅极氮化电介质而在衬底和等离子体氮化电介质层之间的界面处形成氧化物层。
5.根据权利要求1的方法，其中形成氧化物层还包括：
在退火栅极氮化电介质之后在从室温升高的温度下形成额外的电介质层，以在衬底和等离子体氮化电介质层之间的界面处形成氧化物层。
6.根据权利要求1的方法，其中形成氧化物层还包括：
在基本上500～1200度的温度下在惰性气氛中退火栅极氮化电介质；以及
将栅极氮化电介质放置在氧气气氛中，以在衬底和等离子体氮化电介质层之间的界面处形成氧化物层。
7.根据权利要求1的方法，还包括：
通过在衬底上面生长电介质层而形成电介质层。
8.根据权利要求1的方法，还包括：
将以下步骤重复1～100的预先确定次数：
(1)形成另一个氧化物层；
(2)重复将电介质层暴露于等离子体氮化，以添加更多的氮到等离子体氮化电介质层；以及
(3)退火栅极氮化电介质，以通过进一步平滑界面而进一步处理在衬底和等离子体氮化电介质层之间的界面。
9.根据权利要求8的方法，其中在达到预先确定次数之后，省略最后一次的栅极氮化电介质的退火。
10.根据权利要求1的方法，还包括：
将以下步骤重复1～100的预先确定次数：
(1)形成另一个氧化物层；以及
(2)重复将电介质层暴露于等离子体氮化，以添加更多的氮到等离子体氮化电介质层。
11.根据权利要求10的方法，还包括：
一旦完成预先确定次数，退火栅极氮化电介质，以通过进一步平滑界面而进一步处理在衬底和等离子体氮化电介质层之间的界面。
12.根据权利要求10的方法，还包括：
在预先确定次数的一个或多个之间选择性地退火栅极氮化电介质，以进一步处理在衬底和等离子体氮化电介质层之间的界面。
13.一种形成栅极氮化电介质的方法，包括：
(a)在衬底上面形成电介质层并且在衬底和电介质层之间的界面处形成氧化物层；
(b)将电介质层暴露于等离子体氮化，以形成等离子体氮化电介质层；
(c)在预先确定温度下退火栅极氮化电介质；
(d)将步骤(a)、(b)和(c)重复1～100的预先确定次数；以及
(e)退火栅极氮化电介质，以在界面添加额外的氧化物层。
14.根据权利要求13的方法，其中退火栅极氮化物电介质还包括：
步骤(c)的退火处于惰性气氛中。
15.一种在半导体中形成栅极氮化电介质的方法，包括：
(a)在衬底上面形成栅极电介质层；
(b)将栅极电介质层暴露于氮气气氛，以在金属氧化物电介质层中形成氮以及形成氮化物电介质层；以及
(c)退火栅极电介质层；以及
将步骤(b)和(c)重复预先确定次数；
在栅极氮化电介质上面形成栅电极；以及
形成与栅电极相邻的第一和第二电流电极，以在半导体中提供晶体管。
16.根据权利要求15的方法，还包括：
将电介质层形成为二氧化硅、金属氧化物、金属硅酸盐、金属铝酸盐之一，或预先确定金属的组合，或多种金属和氧化物、硅酸盐、镧酸盐或铝酸盐之一的组合。
17.根据权利要求15的方法，其中步骤(c)还包括：
在惰性气氛中退火栅极电介质层；以及
在栅极电介质层上面形成额外的栅极电介质材料，从而在栅极电介质层和衬底之间形成具有较少氮含量的界面层。
18.根据权利要求15的方法，还包括：
一旦完成预先确定次数，退火栅极氮化电介质，以通过进一步平滑界面而进一步处理在衬底和栅极电介质层之间的界面。
19.根据权利要求15的方法，还包括：
通过用ALD、MOCVD和PVD的一种进行沉积形成氧化铪而形成栅极电介质层。
20.根据权利要求15的方法，其中步骤(c)还包括：
在氧气气氛中退火栅极电介质层。
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US7402472B2 (en) 2008-07-22
CN100539042C (zh) 2009-09-09
EP1856724A4 (en) 2009-03-11
JP2008532282A (ja) 2008-08-14
KR101206144B1 (ko) 2012-11-28
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TWI420601B (zh) 2013-12-21
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