CN101064263A - 焊线用降氧化系统 - Google Patents

焊线用降氧化系统 Download PDF

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CN101064263A
CN101064263A CNA2007101012222A CN200710101222A CN101064263A CN 101064263 A CN101064263 A CN 101064263A CN A2007101012222 A CNA2007101012222 A CN A2007101012222A CN 200710101222 A CN200710101222 A CN 200710101222A CN 101064263 A CN101064263 A CN 101064263A
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gas
solder joint
joint district
wire
semiconductor device
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CN100501958C (zh
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加里·吉洛蒂
史蒂文·马克
E.·沃尔特·弗拉施
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Kulicke and Soffa Investments Inc
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Abstract

本发明提供了一种焊线机。所述焊线机包括:焊点区,其用于在焊线操作中保持半导体器件,以及气体供应管线,其被构造成从焊点区的上方向焊点区提供气体。

Description

焊线用降氧化系统
技术领域
本发明涉及半导体器件的焊线,特别涉及向焊线机焊点区提供保护气体。
背景技术
在制造各种半导体器件时,焊线(wire bonding)技术常被用于连接器件中的元件。例如,线材接合部(或线环)常被用于在晶圆与引线框上的触点之间提供互连。一种代表性传统焊线操作涉及:(1)向晶圆上的第一接合位置进行接合(例如使用球焊),(2)将线材朝向引线框上的第二接合位置延伸,(3)将延伸的线材的端部接合至第二接合位置,以及(4)切断线材。在这种球焊中,电子火焰熄灭(即EFO)棒或类似物通常被使用,以在线材端部形成“焊球”(例如无空气球)。
通常,金线(对于氧气来说基本上是非活性的)被用于焊线工艺;然而,在一些特定应用中,更为活性的金属(例如铜、银、钯、铝等等)被使用。这些更为活性的金属可能发生反应,例如,在存在氧气的情况下,并且在线材(和/或线材端部或尾部)形成氧化物/氧化作用,这对于焊线来说是不理想的。
考虑到这样的潜在氧化,一些焊线系统包括子系统,用于在利用EFO棒形成焊球的过程中向线材端部提供保护气体。例如,整体引用于此作为参考的专利No.6,234,376公开了一种这样的系统。
遗憾的是,这种保护气体子系统不能保护整个线材(或焊线工艺的整个过程)不受潜在氧化,并且,活性金属的线材成环过程中的氧化问题仍然存在。
因此,期望提供一种可降低焊线中的氧化的方法和设备。
发明内容
根据本发明的一个代表性实施例,提供了一种焊线机。所述焊线机包括:(1)焊点区,其用于在焊线操作中保持半导体器件,以及(2)气体供应管线,其被构造成从焊点区的上方向焊点区提供气体。
在本发明的一些代表性实施例中,所述焊线机还可以包括:(1)电子火焰熄灭棒,以及(2)电子火焰熄灭气体供应管线。这种电子火焰熄灭气体供应管线可以被构造成当利用电子火焰熄灭棒在线材端部形成焊球时提供气体。由所述气体供应管线和所述电子火焰熄灭气体供应管线提供的气体可以是相同类型的气体,事实上,可以从所述气体源提供。
根据本发明的另一代表性实施例,提供了一种半导体器件加工方法。所述方法包括:提供焊线机,其包括焊点区,用于在焊线操作中保持半导体器件。所述方法还包括:在所述焊线操作中从焊点区的上方向焊点区供应气体。
本发明的所述方法的一些部分还可以被构造成设备的形式(例如,作为焊线机的智能部分),或者作为计算机可读载体(例如,与焊线机结合使用的计算机可读载体)上的计算机程序指令。
附图说明
参照附图阅读下面的详细描述,本发明可被最好地理解。需要强调,根据通常实践,附图中的各种特征并未按比例绘制。相反,为了清楚,各种特征的尺寸被任意地加大或减小。附图中包括下述各图:
图1是根据本发明的一个代表性实施例的焊线系统的一部分的透视图;
图2是根据本发明的一个代表性实施例的气体管件的分解图;以及
图3A-3H是顺序示出根据本发明的一个代表性实施例的用于降低焊点区潜在氧化的工艺的框图。
具体实施方式
美国专利No.5,205,463、6,062,462、6,156,990以及美国专利申请公开文献No.2004/0152292涉及焊线技术,并且整体引用于此作为参考。
这里使用的术语“气体供应管线”指的是被构造成将气体(例如保护气体,诸如氮气、氩气等)引导至焊线机(wire bondingmachine)的焊点区(bond site area)的任何结构(例如这里公开的气体供应管件,诸如管件20)。术语“气体供应管线”并不意味着局限于任何特定的构造或设计。
根据本发明的特定代表性实施例,气体(例如保护气体,诸如包含有氮气、氩气的气体)(其中,所述气体可以包括、也可以不包括诸如氢气等还原气体)被提供于焊线机的焊点区附近。例如,在焊线操作中,恒定供应量的所述气体可以被提供在焊点区,从而使得,在所述焊线操作中,线材氧化的趋势降低。取决于所使用的气体(和温度),还可以降低已经存在于线材上的氧化物/氧化作用,类似于在形成无空气球的过程中施加还原气体的效果。
例如,在焊线操作中,在完成线环后(并且在形成下一个无空气球之前),线材尾部(例如,由毛细管末端悬挂出来的线材端部)可能会受到氧气或类似物作用,从而导致氧化物形成在线材尾部。这种氧化物对于线焊来说可能是不理想的,即使线材尾部随后被形成为无空气球。本发明提出了一种这样的状况,即在焊点区提供(在一些代表性实施例)恒定供应量的保护气体,从而使得,在形成下一个无空气球之前,保护线材尾部不被氧化。本发明还有助于在焊线周期的各种其它阶段中,例如(1)在焊点区中形成第二接合部时,(2)在将所形成的无空气球降低到焊点区时,等等,保护线材(和/或线材端部)不受氧化。
图1是焊线机的一部分的透视图。焊线机的未在本申请中示出和讨论的各种特征在本质上是传统的,并且可被本领域技术人员理解。
图1示出了焊线机的接合头(焊线头)10。接合头10支承着线材夹持器12、换能器16、毛细管14、电子火焰熄灭气体供应管件18和气体供应管件20a。所述焊线机的电子火焰熄灭棒未显示在图1中。本领域技术人员可以理解,线材通过线材夹持器12而被提供至毛细管14,以便用于焊线,所述焊线操作使用例如由换能器提供的超声能量。电子火焰熄灭气体供应管件18连接着气体源(未示出),并且在由毛细管14保持的线材的端部被形成焊球的过程中提供保护气体。特别是在使用活性金属线材(例如铜、铝等等)的应用中,这种保护气体可以有助于在形成焊球的过程中保护金属不受氧化。
如后文中参照图3A-3H所作详细描述,气体供应管件(定向在基本竖直方向,其引出开口指向下方)向焊点区提供保护气体,以在所述焊线操作中保护线材(和/或线材端部)防止潜在氧化。
图2是气体供应管件20a的分解图,所述气体供应管件包括部分20a1和部分20a2。为了正确地引导保护气体流而不干扰所述焊线机的其它部分(和/或便于支承气体供应管件的所述部分20a1),所述部分20a1设有弯折部“B”。例如,所述部分20a1可以由金属例如不锈钢形成。在一些应用中,由于存在潜在引弧等因素,可能不希望有金属管件靠近火焰熄灭过程。这样,在图中所示的实施例中,气体供应管件20a为多件式管件,并且包括可以由非导电材料例如聚酰亚胺形成的部分20a2。此外,所述部分20a2可以是可更换元件。图2还示出了气体管道/导管22(连接着未示出的气体供应源)的一部分,其被构造成连接着气体供应管件20a的所述部分20a1。
现在请参看图3A-3H,提供了一系列框图,它们示出了根据本发明的一个代表性实施例的半导体器件加工方法。图3A示出了半导体器件302(例如芯片、晶圆、基板等等),其被构造成通过线焊而接合在器件300(例如基板、引线框、晶圆/芯片载体、芯片、晶圆等等)上。例如,半导体器件302可以是晶圆,其通过晶圆接合而被预先接合在载体300(例如引线框/基板300)上。夹持器304被提供,以保持器件300(和器件302)就位。夹持器304限定出开口304a。通过开口304a与器件302相邻的区域被称作焊点区(bond site area),其为所述焊线操作发生的区域。
图3B示出了所述焊线机(其中,为了清楚,支承结构/辅助结构被去除)的其它元件,包括毛细管(焊针)14、电子火焰熄灭棒(electronic flame off wand)24、电子火焰熄灭气体供应管件18和气体供应管件20。气体供应管件20可以是多件式结构,例如图1-2所示的结构,或者也可以是单件(整体)式结构。在单件式结构的情况下,取决于应用,其材料可以是金属(例如不锈钢)材料,或者也可以是绝缘材料(例如聚酰亚胺)。在图3B所示的加工步骤中,电子火焰熄灭气体供应管件18将保护气体28朝向无空气球形成在线材上的区域引导。另外,气体供应管件20将保护气体26沿着大致向下方向引导。
图3C示出了一个加工步骤,其中各元件(毛细管14、电子火焰熄灭棒24、电子火焰熄灭气体供应管件18和气体供应管件20)被移动(例如,一起或分开地)到大致位于焊点区306上方的位置。如显示于图3C,保护气体26被从焊点306上方提供到焊点306。图3C还显示了悬挂于毛细管14的末端下方的一段长度的线材30,以及形成在线材30的端部的无空气球32(例如,由电子火焰熄灭棒24形成)。
图3D示出了球32向半导体器件的第一接合步骤(例如,球32被接合至半导体器件302上的未示出的晶圆焊垫)。随着球32被接合至半导体器件302,保护气体26降低焊点区306中的潜在氧化。图3E示出了各元件(毛细管14、电子火焰熄灭棒24、电子火焰熄灭气体供应管件18和气体供应管件20)被向上提升,从而使得一段长度的线材30被从毛细管14放出。随着线材30被从毛细管14放出,保护气体26连续供应以降低焊点区306中的氧化潜在可能性。
图3F示出了线材30的端部向器件300的第二接合步骤(例如,线材30的第二端部被接合至器件300上的未示出的晶圆焊垫)。随着线材30的第二端部被接合至器件300,保护气体26连续供应以降低焊点区306中的氧化潜在可能性。在将线材30的第二端部接合至器件300受,即在半导体器件302和器件300之间完成了线环30a。
图3G示出了各元件(毛细管14、电子火焰熄灭棒24、电子火焰熄灭气体供应管件18和气体供应管件20)被向上提升,并且新的一段线材30在毛细管14的末端下方延伸。随着各个元件被向上提升,保护气体26连续供应以降低焊点区306中的氧化潜在可能性。图3H示出了使用火焰熄灭棒24而使新的球32形成在线材30的端部。例如,在形成球32的过程中,保护气体28被提供,以在无空气球的形成过程中降低潜在氧化。随着新的球32被形成,保护气体26连续供应以降低焊点区306中的氧化潜在可能性。
根据焊线操作的需要,图3A-3H所示的过程可以反复进行。
在整个焊线操作中,保护气体(例如,保护气体26)从所述气体供应管件(例如气体供应管件20)的流动可以是连续的保护气体流。或者,气体流可以是受控的流动(例如,利用与所述焊线机组合的控制器进行控制),所述气体流可以,例如,在最需要考虑潜在氧化的阶段中提供。
这里提供的附图显示了将保护气体从焊点区上方引导至焊点区的代表性结构(例如,气体供应管件20);然而,本发明并不局限于此。本发明涵盖了从焊点区上方(或大致上方)将保护气体提供到焊点区的任何结构、系统或过程。
当本发明被用于由活性金属(例如铜、铝等等)形成的线材时,期望保护气体是对于金属非活性的,并且可以是还原性的。例如,保护气体可以是有效的惰性气体,例如氮气或氩气。还原气体(例如氢气)可以被添加,以与存在的任何氧气发生反应;然而,本发明的气体保护系统可以被用于从焊点区排除空气,而不需要在保护气体中具有氢气。这是本发明的另一项优点,因为使用大量的高易燃氢气存在种种困难。
本发明所公开的技术还可以被用于非活性接合线材,例如金线。例如,保护气体可以被用于在焊点区提供清洁气体屏障,从而提供出形成金线环所需的理想环境。
尽管主要针对保护气体例如氮气和氩气(带有或不带有组成气体例如氢气)描述了本发明,但本发明并不局限于此。只要不与用作接合线材的金属发生不理想的反应,任何气体可以被使用。
本发明的加工技术可以被实施于多种不同的介质。例如,该技术可以作为软件被安装在现有的计算机系统/服务器中(与焊线机关联使用或组合使用的计算机系统)。此外,该技术由包括与所述焊线技术有关的计算机指令(例如计算机程序指令)的计算机可读载体(例如,固态存储器、光盘、磁盘、射频载体介质、声频载体介质等等)操作。
尽管这里特定实施例显示和描述了本发明,但不能认为本发明局限于所示细节。相反,在权利要求所涵盖的范围内,并且在不脱离本发明的前提下,可以对这些细节做出各种修改。

Claims (22)

1.一种焊线机,包括:
焊点区,其用于在焊线操作中保持半导体器件;以及
气体供应管线,其被构造成从焊点区的上方向焊点区提供气体。
2.如权利要求1所述的焊线机,其特征在于,所述气体供应管线包括管件,所述管件具有指向焊点区的引出开口。
3.如权利要求2所述的焊线机,其特征在于,所述管件为单件式结构。
4.如权利要求2所述的焊线机,其特征在于,所述管件为多件式管件,其包括限定出所述引出开口的端部。
5.如权利要求4所述的焊线机,其特征在于,所述端部包括聚酰亚胺。
6.如权利要求2所述的焊线机,其特征在于,还包括用于支承所述管件的接合头。
7.如权利要求6所述的焊线机,其特征在于,还包括电子火焰熄灭棒和电子火焰熄灭气体供应管线,所述电子火焰熄灭气体供应管线被构造成当利用电子火焰熄灭棒在线材端部形成焊球时提供气体。
8.如权利要求1所述的焊线机,其特征在于,所述管件沿其长度限定出弯折部。
9.如权利要求1所述的焊线机,其特征在于,所述气体供应管线被构造成提供所述气体,用以降低线材在焊点区的氧化趋势。
10.一种焊线机,包括:
焊点区,其用于在焊线操作中保持半导体器件;
电子火焰熄灭棒;
电子火焰熄灭气体供应管线,所述电子火焰熄灭气体供应管线被构造成当利用电子火焰熄灭棒在线材端部形成焊球时提供气体;以及
气体供应管件,其被构造成向焊点区提供所述气体,用以降低线材在焊点区的氧化趋势。
11.一种半导体器件加工方法,所述方法包括以下步骤:
提供焊线机,其包括焊点区,用于在焊线操作中保持半导体器件;以及
在所述焊线操作中从焊点区的上方向焊点区供应气体。
12.如权利要求11所述的方法,其特征在于,所述供应步骤包括通过安置在焊点区上方的气体供应管件向焊点区供应所述气体。
13.如权利要求12所述的方法,其特征在于,还包括利用所述焊线机的接合头支承所述气体供应管件。
14.如权利要求11所述的方法,其特征在于,所述供应步骤包括向焊点区供应所述气体,用以降低线材在焊点区的氧化趋势。
15.如权利要求11所述的方法,其特征在于,还包括在所述气体被供应到焊点区的同时,在半导体器件和支承半导体器件的载体之间接合线环。
16.如权利要求11所述的方法,其特征在于,还包括在所述气体被供应到焊点区的同时,将线材接合到半导体器件上。
17.如权利要求16所述的方法,其特征在于,还包括在线材被接合到半导体器件上之前在线材端部形成焊球。
18.如权利要求17所述的方法,其特征在于,还包括在形成焊球之前将气体提供到线材端部。
19.如权利要求11所述的方法,其特征在于,所述供应步骤包括将包含氮气、氩气和氢气中的至少一种的气体供应到焊点区。
20.如权利要求11所述的方法,其特征在于,所述供应步骤包括在下述顺序操作中连续供应所述气体:(1)在线材端部形成无空气球,以及(2)将无空气球接合到半导体器件上。
21.如权利要求11所述的方法,其特征在于,所述供应步骤包括在下述顺序操作中连续供应所述气体:(1)在线材端部形成无空气球,(2)将无空气球接合到半导体器件上,以及(3)将线材的另一端部接合到支承半导体器件的载体上。
22.如权利要求11所述的方法,其特征在于,所述供应步骤包括在下述顺序操作中连续供应所述气体:(1)在线材端部形成无空气球,(2)将无空气球接合到半导体器件上,(3)将线材的另一端部接合到支承半导体器件的载体上,以及(4)在将线材的另一端部接合到所述载体上之后形成另一个无空气球。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101862897A (zh) * 2010-02-11 2010-10-20 深圳市贵鸿达电子有限公司 一种功率器件的铜线键合方法
CN101894770A (zh) * 2010-05-28 2010-11-24 日月光封装测试(上海)有限公司 半导体封装打线表面的预氧化处理方法及其预氧化层结构
CN102254841A (zh) * 2010-05-17 2011-11-23 南茂科技股份有限公司 导气管装置
CN102513687A (zh) * 2011-12-16 2012-06-27 先进光电器材(深圳)有限公司 焊线机及其防氧化结构
CN103311136A (zh) * 2012-03-06 2013-09-18 深圳赛意法微电子有限公司 基于bga封装的铜线焊接装置及铜线焊接实现方法
CN103975426A (zh) * 2011-08-16 2014-08-06 株式会社新川 打线装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4043495B2 (ja) * 2006-04-20 2008-02-06 株式会社カイジョー ワーククランプ及びワイヤボンディング装置
CN101971314B (zh) * 2008-06-10 2013-10-09 库力索法工业公司 用于在引线接合操作中降低氧化的输气系统
SG177212A1 (en) * 2008-06-20 2012-01-30 United Test & Assembly Ct Lt Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process
US20100078464A1 (en) * 2008-10-01 2010-04-01 Kabushiki Kaisha Shinkawa Wire bonding apparatus and ball forming method
US8186562B1 (en) * 2010-12-14 2012-05-29 Asm Technology Singapore Pte Ltd Apparatus for increasing coverage of shielding gas during wire bonding
CN102554526A (zh) * 2012-01-18 2012-07-11 福建福顺半导体制造有限公司 一种半导体器件铜线焊接铜球保护方法及其保护装置
JP5592029B2 (ja) 2012-01-26 2014-09-17 株式会社新川 酸化防止ガス吹き出しユニット
KR101620351B1 (ko) 2012-01-30 2016-05-12 삼성전자주식회사 회로소자의 와이어 본딩 방법
JP2014075519A (ja) 2012-10-05 2014-04-24 Shinkawa Ltd 酸化防止ガス吹き出しユニット
WO2014054305A1 (ja) 2012-10-05 2014-04-10 株式会社新川 酸化防止ガス吹き出しユニット
CN112427796B (zh) * 2020-11-11 2022-03-25 广西天正钢结构有限公司 一种高强度低密度钢材焊接工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281571A (en) * 1964-12-08 1966-10-25 American Chain & Cable Co Flexible conduit assembly for welding apparatus
US4572772A (en) * 1983-11-07 1986-02-25 Texas Instruments Incorporated Method for cleaning an electrode
JPS61172343A (ja) * 1985-01-28 1986-08-04 Toshiba Corp ワイヤボンデイング方法及び装置
JPS62136835A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp 半導体装置の製造方法
DE3915472C2 (de) * 1988-06-02 1995-11-30 Samsung Electronics Co Ltd Bondvorrichtung
JPH0354837A (ja) * 1989-07-24 1991-03-08 Nippon Steel Corp ワイヤーボンディング方法
JPH04186852A (ja) * 1990-11-21 1992-07-03 Shinkawa Ltd ボンデイング装置
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5205463A (en) * 1992-06-05 1993-04-27 Kulicke And Soffa Investments, Inc. Method of making constant clearance flat link fine wire interconnections
JPH07273138A (ja) * 1994-03-31 1995-10-20 Tatsuta Electric Wire & Cable Co Ltd ワイヤボンデイング法
US6062462A (en) * 1997-08-12 2000-05-16 Kulicke And Soffa Investments, Inc. Apparatus and method for making predetermined fine wire ball sizes
US6156990A (en) * 1998-06-22 2000-12-05 Kulicke & Soffa Industries, Inc. Long-wearing impervious conductive wire clamp
US6234376B1 (en) * 1999-07-13 2001-05-22 Kulicke & Soffa Investments, Inc. Supplying a cover gas for wire ball bonding
ATE333300T1 (de) * 2000-04-05 2006-08-15 Pathway Medical Technologies I Systeme und verfahren zum entfernen von intraluminaler materie
JP2003179092A (ja) 2001-12-10 2003-06-27 Nitto Denko Corp 半導体装置の製造方法及びそれに用いるワイヤボンディング装置
TWI287282B (en) * 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
US7229906B2 (en) * 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
US6866182B2 (en) * 2002-10-08 2005-03-15 Asm Technology Singapore Pte Ltd. Apparatus and method to prevent oxidation of electronic devices
US7182793B2 (en) * 2004-01-22 2007-02-27 Asm Technology Singapore Pty Ltd. System for reducing oxidation of electronic devices

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101862897A (zh) * 2010-02-11 2010-10-20 深圳市贵鸿达电子有限公司 一种功率器件的铜线键合方法
CN101862897B (zh) * 2010-02-11 2013-07-03 深圳市贵鸿达电子有限公司 一种功率器件的铜线键合方法
CN102254841A (zh) * 2010-05-17 2011-11-23 南茂科技股份有限公司 导气管装置
CN102254841B (zh) * 2010-05-17 2013-04-03 南茂科技股份有限公司 导气管装置
CN101894770A (zh) * 2010-05-28 2010-11-24 日月光封装测试(上海)有限公司 半导体封装打线表面的预氧化处理方法及其预氧化层结构
CN101894770B (zh) * 2010-05-28 2013-12-11 日月光封装测试(上海)有限公司 半导体封装打线表面的预氧化处理方法及其预氧化层结构
CN103975426A (zh) * 2011-08-16 2014-08-06 株式会社新川 打线装置
CN103975426B (zh) * 2011-08-16 2017-09-26 株式会社新川 打线装置
CN102513687A (zh) * 2011-12-16 2012-06-27 先进光电器材(深圳)有限公司 焊线机及其防氧化结构
CN102513687B (zh) * 2011-12-16 2014-03-05 先进光电器材(深圳)有限公司 焊线机及其防氧化结构
CN103311136A (zh) * 2012-03-06 2013-09-18 深圳赛意法微电子有限公司 基于bga封装的铜线焊接装置及铜线焊接实现方法

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JP2007294975A (ja) 2007-11-08
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US20100230476A1 (en) 2010-09-16
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