CN101051667A - 发光装置 - Google Patents
发光装置 Download PDFInfo
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- CN101051667A CN101051667A CNA2007101039028A CN200710103902A CN101051667A CN 101051667 A CN101051667 A CN 101051667A CN A2007101039028 A CNA2007101039028 A CN A2007101039028A CN 200710103902 A CN200710103902 A CN 200710103902A CN 101051667 A CN101051667 A CN 101051667A
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- light
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Abstract
本发明公开了一种发光装置,包括:载体基片;半导体发光元件,其安装在所述载体基片上;透明薄膜,其固定在所述载体基片上,以覆盖所述半导体发光元件;以及图形电极,其形成在所述透明薄膜的上表面上,其中所述图形电极电连接着所述半导体发光元件的终端电极,所述透明薄膜中含有可被所述半导体发光元件发出的光激发的荧光粉,荧光膜形成在所述透明薄膜的至少一个表面上,所述荧光膜中含有可被所述半导体发光元件发出的光激发的荧光粉。
Description
本申请是申请日为2003年9月1日、申请号为03155757.0、发明名称为“发光装置”的发明专利申请的分案申请。
技术领域
本发明涉及一种半导体发光元件如发光二极管、平面发射型激光器的安装技术,该半导体发光元件可以用在例如半导体装置、照明装置、显示装置及类似装置中。
背景技术
近些年来,由于半导体技术的不断进步,发光范围在蓝光至紫外线短波内的发光二极管和平面发光型二极管已经能够实现。通过使用它们,利用荧光粉激发的白光光源正被广泛地开发。例如,白光能够通过使用发黄光的荧光粉涂覆蓝光发光二极管而获得。因此,白光光源正被实际应用于各种显示装置和照明装置中。而且,人们还进行了下面的尝试:波长在300-400nm内的紫外线发光二极管被用作光源,然后再用该二极管激发红、绿、蓝三原色的荧光粉,从而能够获得更自然的白色光。
为了安装由发光二极管和荧光粉构成的上述类型的发光装置,已经有人提出了多种方法(例如,JP11(1999)-298048A、JP 2002-76444A等)。下面参考图8对包含发光二极管和荧光粉上述组合的传统白光发光装置的结构进行描述。
图8是剖视图,示出了传统的白光发光装置的示例性结构。蓝光发光二极管2利用银焊膏3安装在载体基片1上,图形电极22借助于绝缘薄膜21形成在载体基片1上。终端电极4形成在发光二极管2的一个表面上,并且终端电极4通过金线23电连接着位于载体基片1上的图形电极22。而且,含有荧光粉的密封层24被形成以覆盖在发光二极管2上。
当电源通过图形电极22而被施加给发光二极管2时,发光二极管2发出蓝光。一部分蓝光在密封层24中被荧光粉吸收,从而荧光粉发出黄光。从荧光粉发出的黄光与穿过密封层24的一部分蓝光混合,以获得白光光源。
然而,上述结构具有下面的问题。使用这种结构,需要通过引线焊接而形成金线23。而且,在引线焊接过程中,可能会有过量的应力作用在发光二极管2上,从而会使发光二极管2的退化。而且,使用这种传统结构,需要在引线焊接之后形成密封层24,从而会增加生产成本。
此外,由于在密封层24固化时会有应力产生,因此金线23可能会从终端电极4或图形电极22上断开。这些问题是导致发光装置产量下降的主要因素,特别是在布置有大量发光二极管阵列的发光装置中。而且,使用这种传统结构,由于金线23的存在而很难降低发光装置的厚度。
发明内容
因此,鉴于上面的问题,本发明的目的是提供一种薄发光装置,其能够以低成本、高产量地生产,并且不需要引线焊接工序和形成含有荧光粉的密封层。
为了解决上述问题,本发明提供了一种发光装置,其包括:载体基片、安装在载体基片上的半导体发光元件、固定在载体基片上以覆盖半导体发光元件的透明薄膜、形成在透明薄膜的上表面上的图形电极,其中图形电极电连接着半导体发光元件的终端电极。
对于本领域普通技术人员来说,通过参考附图阅读和理解下面所作的详细描述,可使本发明的这些和其他优点变得显而易见。
附图说明
图1A是根据本发明实施例1的发光装置的剖视图;
图1B是该发光装置的俯视图;
图2是根据本发明实施例2的发光装置的剖视图;
图3是根据本发明实施例3的发光装置的剖视图;
图4是根据本发明实施例4的发光装置的剖视图;
图5是根据本发明实施例5的发光装置的剖视图;
图6A是根据本发明实施例6的发光装置的剖视图;
图6B是该发光装置的俯视图;
图7是根据本发明实施例7的发光装置的剖视图;
图8是一种传统发光装置的剖视图。
具体实施方式
本发明的发光装置的特征在于:透明薄膜被设置得覆盖在安装在载体基片上的半导体发光元件,并且形成在透明薄膜的上表面上的图形电极电连接着半导体发光元件的终端电极。从而,在生产和使用密封层密封的过程中,不再需要用于将半导体发光元件连接在图形电极上的引线焊接,因此能够以低成本、高产量地生产薄的发光装置。
在使用了上述结构的发光装置中,优选使透明薄膜含有荧光粉,荧光粉可被半导体发光元件发出的光激发。因此,形成含有荧光粉的密封层的工序可以省掉,从而发光装置能够以低成本生产。
而且,优选使荧光膜形成在透明薄膜的至少一个表面上,荧光膜含有可被半导体发光元件发出的光激发的荧光粉。因此,形成含有荧光粉的密封层的工序可以省掉,从而发光装置能够以低成本生产。此外,能够防止因允许透明薄膜含有大量荧光粉而引起的强度下降,并且能够使用任意量的荧光粉。另外,优选使荧光膜形成在透明薄膜位于半导体发光元件侧的表面上。因此,特别地讲,在发光二极管的发光波长在紫外线范围内时,由发光二极管发出的光能够在穿过透明薄膜之前被荧光粉转变成可见光。因此,能够降低由于透明薄膜的吸收而造成的光的损失,从而提高了发光效率。
另外,优选使载体基片具有凹槽部分,并将半导体发光元件安装在凹槽部分中。因此,透明薄膜的弯曲较小,并且发光装置能够高产量地生产。优选使凹槽部分的侧壁表面由底部开始向着透明薄膜逐渐向外扩展。因此,由发光元件的侧面发出的光会从凹槽部分的侧壁斜面发生反射,从而可被引导至透明薄膜。因此,能够提高光提取效率和发光效率。凹槽部分的侧壁表面与载体基片的上表面之间所形成的夹角优选在30°-60°的范围内。
在使用了上述结构的发光装置中,半导体发光元件的至少一个终端电极能够电连接着载体基片或形成在载体基片上的电极。因此,发光二极管仅在一点上连接着透明薄膜上的电极,从而能使透明薄膜上的电极对光的遮挡最小化,以提高发光效率。
而且,在使用了上述结构的发光装置中,多个半导体发光元件能够以阵列方式安装在载体基片上。因此,能够很容易地构造出大输出功率的发光装置。
另外,在使用了上述结构的发光装置中,透明薄膜可以通过粘合剂固定在载体基片上。因此,透明薄膜能被牢固地固定,并且能将发光二极管与外面的空气屏蔽开,从而使其在湿气和类似物中的暴露量最小化。因此,能够提高发光二极管的可靠性。优选使粘合剂含有荧光粉,且荧光粉可被半导体发光元件发出的光激发。因此,从发光二极管侧面发出和泄漏的光能被荧光粉转变为可见光,从而可以提高发光效率。
在使用了上述结构的发光装置中,载体基片可由金属制成。因此,发光二极管的热辐射特性能够得到显著地提高,并且能够提高最高工作温度和可靠性。
而且,在使用了上述结构的发光装置中,由载体基片和透明薄膜包围着的空间内优选密封着树脂。因此,当树脂收缩时,树脂会将透明薄膜向载体基片侧吸引。从而,安装状态会得到增强,并且能够实现具有高可靠性的发光装置。此外,密封在上述空间内的树脂优选含有荧光粉,且荧光粉可被半导体发光元件发出的光激发。因此,从发光二极管的侧面发出的光也能被荧光粉转变为可见光,以提高发光效率。另外,密封在上述空间内的树脂的折射率优选小于半导体发光元件的发光部分的折射率,而大于透明薄膜的折射率。因此,可以提高发光二极管的光提取效率,从而能够提高发光效率。
在使用了上述结构的发光装置中,由载体基片和透明薄膜包围着的空间内优选密封着压力低于大气压的气体。因此,透明薄膜会被向着载体基片侧吸引。从而,安装状态得到了增强,而且能够实现具有高可靠性的发光装置。
而且,在使用了上述结构的发光装置中,由载体基片和透明薄膜包围着的空间内优选密封着惰性气体,该惰性气体选自下面一组气体:氮气、氩气、氦气或它们的混合气体。因此,特别是在发光二极管发出的光位于紫外线范围内的情况下,能够防止因空气中存在氧气和湿气而导致的发光二极管的电极性能的下降,并且能够实现具有高可靠性的发光装置。
下面,通过参看附图,对本发明每个实施例中的发光装置进行具体地描述。
实施例1
图1A是剖视图,示出了根据本发明实施例1的发光装置,图1B是该发光装置的俯视图。发蓝光的InGaN(氮化铟镓)基发光二极管2通过银焊膏3固定在载体基片1上。由可透射蓝光的树脂制成的透明薄膜5被设置得覆盖在发光二极管2的上部,并且通过粘合剂6固定在载体基片1上。图形电极7形成在透明薄膜5的一个表面上。图形电极7穿过位于发光二极管2正上方的通孔8延伸至透明薄膜5的反面上,并且通过金制凸块9电连接着发光二极管2的终端电极4。荧光粉颜料根据所需要获得的白光等级按比例地混合在透明薄膜5中。
根据上述结构,不需要引线焊接,并且可以非常高效地进行安装。而且,可以避免由于引线脱落或由于变形所致发光二极管退化所引起的产量降低。另外,由于不需要使用引线,从而整个厚度可以降低。此外,由于不需要荧光粉涂覆工序,从而可以减少加工工序数,因此发光装置能够以低成本、高产量地生产。
透明薄膜5固定在载体基片1上,并且发光二极管2被置于它们二者之间,从而透明薄膜5与发光二极管2相对应的部分会出现某种程度的变形。然而,由于发光二极管2的厚度非常小,所以这种变形在结构方面不会引起任何实质性的问题。
发光二极管2并不限定于上述实例,而是可以根据目的进行不同的选择。透明薄膜5的实例包括:甲基聚丙烯酸甲酯、聚偏二氯乙烯、聚酯、聚乙烯醇、单向拉伸聚酯、非定向聚酯、多芳基化合物、聚醚砜、聚碳酸酯、环状无定形聚烯烃、聚酰亚胺以及其它精细塑料。将被混合在透明薄膜5中的荧光粉颜料可以与发光二极管2一起适当地选择。红色荧光粉的实例包括:(Y,Gd)BO3:Eu、Y2O3:Eu等等。绿色荧光粉的实例包括:Zn2SiO4:Mn、BaAl12O19:Mn等等。蓝色荧光粉的实例包括:BaMgAl14O23:Eu等等。
实施例2
图2是剖视图,示出了根据本发明实施例2的发光装置。实施例2与实施例1的不同之处在于:透明薄膜5a不含荧光颜料,并且荧光膜10以薄膜形状形成在透明薄膜5a的一个表面上。
根据上述结构,可以防止当透明薄膜5a中含有大量荧光粉时所造成的透明薄膜5a的强度下降。而且,可以使用任意量的荧光粉。
荧光膜10可以设在透明薄膜5a的上表面上。然而,在荧光膜10设在透明薄膜5a的下表面上(即设在透明薄膜5a的位于发光二极管2一侧的表面上)的情况下,可以获得如下优点。从发光二极管2发出的光能被荧光膜10转变为波长大于发光二极管2的发射光峰值波长的可见光。因此,能够降低由于透明薄膜5a的吸收而造成的光的损失,从而提高了发光效率。而且,在发光二极管2的发光光谱在紫外线范围之外时,能够抑制随着时间的推移因紫外线造成的透明薄膜5a退化,从而可以实现具有高可靠性的发光装置。
荧光膜10可以通过任何成膜方法例如薄膜成型方法、涂覆等形成。
实施例3
图3是根据本发明实施例3的发光装置的剖视图。实施例3与实施例1的不同之处在于:凹槽部分11形成在载体基片1中,发光二极管2安装在凹槽部分11的底面上。例如,可用铝作为载体基片1,并且每个边的边长为1mm、深度约为100μm的凹槽部分11可通过压制成型形成,该深度与发光二极管2的厚度大致相等。严格地讲,凹槽部分11的深度要大于发光二极管2的厚度,但银焊膏3、终端电极4和金制凸块9的总厚度基本上可以忽略。
使用上述结构,从发光二极管2侧向发出的光可被凹槽部分11的侧壁反射,从而会被有效地引导至透明薄膜5。因此,可以实现具有高发光效率的发光装置。在光提取效率方面,希望凹槽部分11的侧壁由凹槽部分11的底面开始向透明薄膜5逐渐扩展,如图3所示。凹槽部分11的侧壁表面相对于载体基片1的上表面所形成的夹角θ优选为30°-60°。此外,如果在凹槽部分11的侧壁上设置反射膜,还可以进一步提高光提取效率。
而且,使用上述结构,透明薄膜5能够以大致平坦的状态固定,而其弯曲最小化。因此,能够避免由于透明薄膜5中存在弯曲引起的局部过度应力而造成退化,并且还可以避免图形电极7脱落。
实施例4
图4是根据本发明实施例4的发光装置的剖视图。在本实施例中,实施例2的设计思想被应用到实施例3的结构中。更具体地讲,实施例4与实施例3的不同之处在于:透明薄膜5a不含荧光颜料,并且荧光膜10以薄膜形状形成在透明薄膜5a的一个表面上。
根据上述结构,如实施例2所述,可以避免在透明薄膜5a中含有大量荧光粉的情况下造成的透明薄膜5a的强度下降,并且能够使用任意量的荧光粉。通过在透明薄膜5a的下表面上设置荧光膜10所获得的优点与实例2所获得的优点相同。
实施例15
图5是根据本发明实施例5的发光装置的剖视图。载体基片1由铝制成,并且凹槽部分11以与实施例3和4相同的方式通过压制成型而形成。
实施例5与实施例3的不同之处在于:发光二极管2的两个终端电极4a和4b分别形成在发光二极管2的下表面和上表面上,终端电极4a与载体基片1连接,终端电极4b与透明薄膜5上的图形电极7连接。
根据上述结构,发光二极管2仅在一点上电连接着图形电极7。因此,安装效率可以得到提高,并且发光二极管2被图形电极7遮挡的面积减至原来的一半,从而能够实现具有更高效率的发光装置。
在上述发光装置中,载体基片1由铝制成,而铝是导电金属,从而载体基片1能电连接在终端电极4a上。然而,本发明并不限定于此。例如,上面形成有图形电极的绝缘基片也可以电连接在终端电极40a上。
为了将终端电极4a与载体基片1或设在载体基片1上的电极连接,不是必须将终端电极4a放置在发光二极管2的下表面上。甚至在终端电极4a设在发光二极管2的上表面上的情况下,终端电极4a也可以穿过发光二极管的通孔或类似物而与载体基片1和类似物连接。
上述连接结构可以应用在与上述将凹槽部分11设在载体基片1中的发光装置类型不同的发光装置中。即使是在以与实施例1相同的方式使用平坦载体基片的情况下,也可以通过采用本实施例的结构而获得相同的效果。
而且,即使是在以与实施例2相同的方式利用形成有荧光膜10的透明薄膜5a代替含有荧光颜料的透明薄膜5的情况下,也可以通过采用本实施例的结构而获得相同的效果。
实施例6
图6A是根据本发明实施例6的发光装置的剖视图。图6B是该发光装置的俯视图。载体基片1通过由例如铝制成而具有导电性,并且凹槽部分11通过压制成型而形成阵列。构成该阵列的每个发光部分的结构与实施例5中的结构相同。
在每个发光二极管2的两个终端电极中,形成在发光二极管2的下表面上的终端电极4a与载体基片1连接,形成在发光二极管2的上表面上的终端电极4b与透明薄膜5上的图形电极7连接。
根据上述结构,能够实现具有大功率电源的发光装置,该发光装置相当于一般的照明装置例如日光灯和电灯。而且,能够将发光二极管2的终端电极4a和终端电极4b同时分别与载体基片1和透明薄膜5上的图形电极7连接。这样,就不必进行引线焊接和为每个发光二极管2涂覆荧光粉。因此,可以显著地降低生产成本。
在实施例1至6描述的结构中,由载体基片1和透明薄膜5包围着的发光二极管2周围的空间能够根据实际应用情况设置各种气氛。例如,可以在上述空间内密封着压力为大气压的空气。而且,气体可以以低于大气压的压力(例如,在1×103至5×104Pa的范围内)密封在上述空间中。因此,透明薄膜5会在发光二极管2的上部向载体基片1侧挤压。因此,透明薄膜5能够稳定地固定,从而提高了长期可靠性。此外,密封气体希望是惰性气体例如氮气、氩气、氦气及类似气体。这样,就能够防止发光二极管2发出的紫外线成分使得气体中的氧气和湿气与发光二极管的电极和透明薄膜的表面反应,进而可以防止可靠性的降低。惰性气体例如氮气、氩气、氦气和类似气体可以以大气压或更高的压力密封在上述空间中。
实施例7
图7是根据本发明实施例7的发光装置的剖视图。实施例7与实施例6的不同之处在于:在发光二极管2周围的空间中密封着树脂12。在树脂12被密封在该空间中后,发光二极管2会牢固地固定在载体基片1上。
树脂12的折射率希望介于发光二极管2的发光层的折射率和透明薄膜5的折射率之间。这样,就可以提高发光二极管2的光提取效率。这些折射率之间的关系可以是例如发光二极管为2.6、树脂为2.0、透明薄膜为1.6。而且,树脂12可以以与透明薄膜5相同的方式含有荧光粉。因此,能够进一步提高其他光到白光的转变效率,从而可以实现具有高效率的发光装置。
在本实施例中,已经对发光二极管2以阵列形式设置在具有凹槽部分11的载体基片1上的情况进行了描述。然而,本发明并不限定于此。例如,在实施例1至5描述的结构中,也可以在发光二极管2周围的空间中密封树脂,从而能够获得相同的效果。
在上述实施例中,对载体基片1的材料没有特殊的限制。然而,特别地讲,希望使用金属例如铝、铜和类似物。这样能够确保良好的热辐射性能,并且可以提高工作温度和可靠性。
而且,对于透明薄膜的厚度没有特殊的限制。然而,为了在安装过程中满足机械稳定性和挠性,透明薄膜的厚度希望为大约25μm至小于500μm。
此外,透明薄膜上的电极图形可以根据发光装置与外驱动电路之间的连接类型自由地设计。应当指出,应该将电极线宽设定得小些,以使在发光二极管的正上方位置及周围位置,即发光二极管和荧光粉发出的光通过的位置,对光的遮挡能够最小化。线宽希望小于100μm。
另外,在上述实施例中,能够使用例如波长大约为470nm的蓝光发光二极管。然而,本发明并不限定于此。例如,也可以使用波长为420nm或更小的位于紫外线区域的发光二极管,由于透明薄膜中包含的荧光粉可以选择发红、黄、蓝、绿及类似颜色的光的荧光粉,且能被以合适比率混合在透明薄膜中,所以能够获得较接近于自然光的白光。
还有,用于将透明薄膜固定在载体基片上的方法并不限定于粘合剂。透明薄膜也可以通过机械夹持结构固定,例如,可在基片上形成槽,而透明薄膜可以嵌接固定在槽中。发光二极管的安装方法并不限定于银焊膏。发光二极管也可以使用易熔焊料例如PbSn、AuSn和类似物安装。作为半导体发光元件,可以利用例如平面发射型激光器替代发光二极管。
在没有脱离本发明精神或实质特征的前提下,本发明可以采用其他形式。在本专利申请中公开的实施例完全是说明性的,而非限定性的。本发明的范围通过权利要求而不是前面的描述限定,并且覆盖了落在权利要求的等同意义和范围内的所有更改。
Claims (5)
1.一种发光装置,包括:载体基片;半导体发光元件,其安装在所述载体基片上;透明薄膜,其固定在所述载体基片上,以覆盖所述半导体发光元件;以及图形电极,其形成在所述透明薄膜的上表面上,其中所述图形电极电连接着所述半导体发光元件的终端电极,所述透明薄膜中含有可被所述半导体发光元件发出的光激发的荧光粉,荧光膜形成在所述透明薄膜的至少一个表面上,所述荧光膜中含有可被所述半导体发光元件发出的光激发的荧光粉。
2.如权利要求1所述的发光装置,其特征在于:所述透明薄膜通过粘合剂固定在所述载体基片上。
3.如权利要求1所述的发光装置,其特征在于:由所述载体基片和所述透明薄膜包围着的空间中密封着树脂,该树脂的折射率小于所述半导体发光元件的发光部分的折射率,而大于所述透明薄膜的折射率。
4.如权利要求1所述的发光装置,其特征在于:由所述载体基片和所述透明薄膜包围着的空间中密封着压力低于大气压的气体。
5.如权利要求1所述的发光装置,其特征在于:由所述载体基片和所述透明薄膜包围着的空间中密封着惰性气体。
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