CN101046725A - Flash controller - Google Patents
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- CN101046725A CN101046725A CN 200710073655 CN200710073655A CN101046725A CN 101046725 A CN101046725 A CN 101046725A CN 200710073655 CN200710073655 CN 200710073655 CN 200710073655 A CN200710073655 A CN 200710073655A CN 101046725 A CN101046725 A CN 101046725A
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Abstract
The present invention discloses a flash storage controller. Said flash storage controller includes the following several portions: instruction resolver, transmission controller and several on-chip flash storage control units. Said invention also provides the concrete function and action of above-mentioned every portion, and also provides the working principle of said flash storage controller and its concrete operation method. The flash memory made up by adopting the invented flash storage controller can greatly raise read/write speed.
Description
Technical field
The present invention relates to a kind of flash controller, concrete, the present invention relates to a kind of multi-channel parallel flash controller of hanging many flash chips down, simultaneously, the invention still further relates to a kind of control chip of flash array.
Background technology
At present, along with being extensive use of of semiconductor medium memory storage, various memory devices and multiple storage medium have appearred.Wherein, range of application the most widely portable storage device no more than USB flash disk, its employed storage medium mainly is the Nand Flash (with NOT-AND flash) among the Flash (flash chip), and this and NOT-AND flash are in read-write and wipe etc. in the operating process, all needs to take the regular hour.Continuous development along with various softwares, the user requires increasing to the needs data quantity stored, the capacity of flash memory device also increases thereupon, and the time that flash memory needs to wait in operating process also becomes more and more of a specified duration along with amount of operational data must increase, and causes the user more and more can not stand.
This is that the flash memory device of purpose generally uses USB interface (USB (universal serial bus)) with portable, and the read or write speed that general USB2.0 agreement can be supported is 480Mbps, removes the bus protocol expense, and actual available read or write speed can reach 48MBps.And the single channel USB flash disk general 10MBps of speed in the read operation process that generally uses at present, write operation speed generally has only 8MBps, even improved binary channels transmitting high speed USB flash disk, read operation speed can not surpass 20MBps, write operation speed can not surpass 15MBps.Obviously, the operation rate that the read-write operation speed of USB flash disk is allowed with the USB2.0 agreement has very big difference, and therefore speed still can further improve in theory.The main cause that causes this phenomenon is flash memory in read-write and operation such as wipes, all needs to take the regular hour.When the user is carrying out in the reading and writing data process, these times that take need the size of service data piece to be directly proportional with the user, and data block is big more, and the flash disk operation time is of a specified duration more, and the flash chip operation has just become the bottleneck of restriction overall rate.
In addition, proposed multichannel control thought in the Chinese patent " multi-channel flash memory transmission controller, chip and memory device " (publication number CN 1790308A), but it does not realize the concurrent working that hyperchannel is real.The control signal wire that is each passage is multiplexing, so in a single day has a flash chip not have the complete operation task, and every other group just cannot begin new operation.Also lack the flash controller that a kind of hyperchannel works alone in the prior art.
Summary of the invention
In order to solve the bottleneck problem that existing flash chip occurs in operating process such as read-write, the present invention proposes a kind of flash controller, improved the read or write speed of storer effectively.
The flash controller that the present invention proposes comprises: instruction parser, transmission control unit (TCU), a plurality of interior flash memory control modules; Instruction parser instructs resolves and command assignment, and instruction parser is by sheet inner control bus and transmission control unit (TCU), a plurality of independent respectively control informations alternately of interior flash memory control module; In each sheet the flash memory control module respectively by separately independently the control signal transmission channel link to each other with each group flash chip, finish control signal alternately; Transmission control unit (TCU) carries out data interaction by data bus in the sheet and each group flash chip.
Preferably, the detailed process of described instruction parser and the mutual control information of transmission control unit (TCU) is: the data bus control signal sent to transmission control unit (TCU) in instruction parser was resolved the Data Control instruction in flakes, and transmission control unit (TCU) carries out signal feedback to instruction parser.
Preferably, the detailed process of described instruction parser and the mutual control information of flash memory control module is: instruction parser resolves to many group instruction queues with steering order, and each is organized instruction queue distribute to each flash memory control module, each flash memory control module carries out signal feedback to instruction parser.
Preferably, the control signal reciprocal process of described interior flash memory control module and each group flash chip is specially: the flash memory control module produces the flash chip operation signal according to the instruction queue that receives, the target flash chip that control is corresponding.
Preferably, the flash memory control module is hung a plurality of flash chips down in described each sheet, and described control signal transmission channel is the instruction address multiplex bus, decides the operation that the flash memory control module carries out the target flash chip and the address of operation by address and instruction multiplexing.
Preferably, the data message reciprocal process of described transmission control unit (TCU) and each group flash chip is specially: the state of FIFO and flash chip in control signal that transmission control unit (TCU) is sent according to instruction parser and the interface controller, and by string also/and go here and there the mutual of data bus data in outer data bus of conversion and control sheet and the sheet.
Preferably, the number of described interior flash memory control module is no more than down train value: storage device interface speed value of rounding after divided by 10MBps.
Preferably, for the memory device of USB2.0 interface, the number of described interior flash memory control module is no more than 4.
Preferably, described flash controller is realized by ASIC, CPLD or FPGA.
Flash controller of the present invention is because the implementation that has adopted hyperchannel to work alone, for the high speed flash memories that utilizes flash controller of the present invention to realize, its interface bandwidth is generally determined by bandwidth and two aspects of interface protocol of flash chip, when the bandwidth of interface protocol was enough big, the memory interface bandwidth was generally the flash chip columns and multiply by 10MBps; Along with the increase of flash array number, the bottleneck of bandwidth of memory can concentrate on the interface protocol of storer gradually, is subjected to the restriction of interface protocol bandwidth.In USB2.0 interface memory commonly used at present, its interface protocol bandwidth is 60MBps, and in read-write operation, consider the protocol overhead of operation, the effective bandwidth that can reach is 48MBps, therefore, the size of selecting flash array is 4 row, 4 row, read operation speed through test storage equipment reaches more than the 35MBps, write operation reaches more than the 25MBps, increase exponentially the read-write speed of existing flash memories, effectively solved the bottleneck problem in the read-write operation process that above-mentioned existing flash memory device exists.
Description of drawings
Fig. 1 is existing flash memory storage apparatus basic structure synoptic diagram;
The principle of contrast figure that Fig. 2 controls flash memory for the flash controller of flash controller of the present invention and general device;
Fig. 3 is the flash controller structured flowchart of the preferred embodiment of the present invention.
Embodiment
The basic block diagram of the flash memory device that is illustrated in figure 1 as, the interface between flash memories and the main frame for example can adopt USB interface 2.0 agreements.Interface controller connects flash controller and interface, carries out the mutual and data transmission of signal between host interface and the local chip flash controller simultaneously.The flash array controller generally can be solidificated in the chip, and the main effect of this chip is according to flash chip array feedback signal, and Host Command is resolved, and produces the command signal formation, and control needs the purpose flash chip of operation.Also comprise the destination flash chip array of storaging user data and controller function, different designs comprises different flash memory numbers.
The flash controller that the present invention proposes, this controller can be controlled the flash array that a plurality of flash chips are formed, by organizing independently signal wire and data line more, realize the transmission of every group of independent operation and data parallel, reach the purpose of the two-forty read-write of high-capacity flash memory device.Controller mainly comprises: instruction parser, transmission control unit (TCU) and several flash memory control modules.Instruction parser is to instruct to resolve and the maincenter of command assignment, is the main control module of flash array controller; Instruction parser resolves to many group instruction queues according to the flash chip status signal of flash memory control module group feedback in the sheet with instruction, wherein, the main contents that instruction queue comprises have that the capable sheet that will operate the purpose flash memory selects information, content of operation, address and operation amount in the sheet that will operate, by control bus instruction queue are distributed to flash memory control module group; Simultaneously, resolver also can produce the control signal to transmission control unit (TCU), comes the transmission of control data bus, and the control signal of transmission control unit (TCU) is also transmitted by sheet inner control bus; In addition, resolver also can be according to the error message of transmission control unit (TCU) and flash memory control module group feedback, and signals such as interrupting information and operation failure produce interrupt request and are transferred to interface controller.When flash memory control module group is received the instruction queue that instruction parser sends, produce the flash chip operation signal according to instruction respectively, the target flash chip that control is corresponding is read into the information of flash memory record, pass to data bus in the sheet, pass to the outer data bus of sheet by transmission control unit (TCU) again; The flash chip data line writes target flash to data more by organizing independently perhaps to read in the sheet data on the data bus.The main effect of transmission control unit (TCU) is exactly the state of FIFO and flash chip in the instruction of sending according to instruction parser and the interface controller, the data transmission of control data bus, many group flash chip data lines are passed the data work and the string conversion of coming, many group signals are changed into bus signals, and then give interface controller the data transmission on the bus; Perhaps the data that interface controller is transmitted pass to the data bus in the sheet, do string and conversion then, bus data are divided into the flash chip data of many group independent parallels.
Figure 2 shows that flash controller of the present invention and the generally contrast of the flash controller of flash memory device, the flash memory number of general flash memory device is 1 or 2, flash controller passes through one group of signal wire to their control, and the transmission of data is by one group of data line; The flash memory number of the present invention's control does not have the upper limit in theory, can comprise 2,4,8,16 ..., Fig. 2 example is the flash array of one 4 row 4 row, carries out the mutual of information by 4 groups of separate control signal wires and 4 groups of data lines between their to-controllers.Here, each is organized between the signal wire is separate, it or not the parallel relation that is re-used, the multiplexing one group of signal wire of each row flash chip, in the single job process, every row can only have a flash chip Attended Operation at most, in every group of signal wire two capable chip selection signal are arranged all, determine the flash chip that the current operation of these row participates in.Data line is 4 group of 8 bit line independently separately, therefore, the speed of the data bus that in controller chip, obtains will be four groups of flash chip data line speed and, like this, the USB flash disk that Bus Speed is general relatively approximately is their 4 times.Here, the group number of data line depends on the row number of array, says on the principle that the row number is many more, and the data bus speed in the control chip is high more, and interface transmission effective speed is also high more thereupon; But, in fact be not such, when the row number more than 4 the time, the bottleneck of this array flash memory in data transmission will be transferred on the interface, limited by interface sequence, has the upper limit of a speed, i.e. USB2.0 interface protocol effective data rate.Generally speaking the flash chip columns of hanging down is no more than: storage device interface speed value of rounding after divided by 10MBps.
Better understand the present invention for convenience, also 3 describe in detail in conjunction with the accompanying drawings by the embodiment that hangs 4 * 4 array flash chips down.
Array flash controller structural representation as shown in Figure 3,5 is exactly the chip that has comprised controller among the figure, chip can be that embedded type C PLD or on-site programmable gate array FPGA also can be special ASIC.6 catch up with the signal flow (being that sheet is controlled bus outward) that carries out instruction interaction between the layer interface controller for the flash array controller chip, after interface controller has read host command, can be transferred to the instruction parser shown in 7 among the figure to instruction.Interactive signal 6 mainly comprises the length of action type, operation and the address of operation, simultaneously, comprises that also instruction parser feeds back to the interrupt request of interface controller.Instruction parser is received after the host command, can resolve to instruction queue group 17 to it, here Zu number depends on the columns and the transmission control unit (TCU) of flash memory, again through the 8 sheet inner control signal buss that indicated among the figure, data bus control signal 9 is passed to transmission control unit (TCU) 12, simultaneously flash memory control module group control signal formation 18 is passed to corresponding flash memory control module group 19 (i.e. C1 among the figure, C2, C3, C4), wherein, the control signal bus has comprised that also transmission control unit (TCU) and flash memory control module feed back to the error message of instruction parser, signal such as interrupting information and operation failure, instruction parser produces interrupt request according to these signal feedback and issues interface controller then.Here, the main effect of transmission control unit (TCU) is the transmission of control bus data stream, the flash chip data line is passed 4 groups of data-signals 15 of coming change into bus data 13 by data bus in the sheet 14, and then bus data is transferred to the outer data bus 11 of sheet; The perhaps sheet external bus data 11 that interface controller is transmitted data bus 14 in the sheet is divided into bus data according to the flash chip control signal flash chip data 15 of many group independent parallels then; Simultaneously, it is mutual that transmission control unit (TCU) need carry out signal by status signal lines 10 and interface controller, judge by the state of signal wire whether the fifo status in the interface controller meets the demands, determine whether carrying out the interactive operation of data and produce operation signal FIFO.The main effect of flash memory control module group 19 is flash arrays 16 of the outer bottom of control strip, and the mistake that flash chip is produced in operating process interrupts feeding back to instruction parser simultaneously.Flash memory control module group 19 is sent instruction according to the signal queue of receiving to the target flash of needs control separately, if read operation, be operated flash chip will by separately independently data line data parallel is transferred to data bus in the sheet, then, according to the control signal that transmission control unit (TCU) sends, the data of data bus are passed to interface controller; If write operation, transmission control unit (TCU) can pass to data bus in the sheet with data from interface controller according to the instruction of receiving, then, being operated flash chip will be according to instruction reading of data on the data bus in the slave controller sheet respectively, by separately independently data line the data that read are write flash chip.20 are depicted as the flash array controller with the control signal group between the flash array among the figure, and the control signal of each group comprises the sheet choosing to flash chip, action type, the mistake interruption of working length and chip feedback etc.15 are depicted as flash array with the data signal group between the data bus in the array control unit sheet, be 4 group of 8 position datawire of parallel independent, the data rate that obtains on the data bus be these 4 groups of data line speed and, therefore can effectively improve the message transmission rate of bus.
Flash array with 4 row, 4 row in the last example is an example, the description of property that the invention has been described.In addition, flash array of the present invention can be expanded to n row m is capable, and wherein n can be 2,4,8 ..., m can be 1,2,4 ... and so on the combination of multiple flash array, these similar variations all are under dominant ideas of the present invention, these all are obvious for the technician.In addition, the flash controller of the present invention's proposition can wait by ASIC, CPLD or FPGA and realize.Therefore, the present invention who describes in the literary composition can have multiple variation, and these change all can not think to break away from theme of the present invention and usable range, for above these be obvious change for the skilled person, be included in the scope of the present invention.
Claims (9)
1. a flash controller is characterized in that, described flash controller comprises: instruction parser, transmission control unit (TCU), a plurality of interior flash memory control modules; Instruction parser instructs resolves and command assignment, and instruction parser is by sheet inner control bus and transmission control unit (TCU), a plurality of independent respectively control informations alternately of interior flash memory control module; In each sheet the flash memory control module respectively by separately independently the control signal transmission channel link to each other with each group flash chip, finish control signal alternately; Transmission control unit (TCU) carries out data interaction by data bus in the sheet and each group flash chip.
2. flash controller according to claim 1, it is characterized in that, the detailed process of described instruction parser and the mutual control information of transmission control unit (TCU) is: the data bus control signal sent to transmission control unit (TCU) in instruction parser was resolved the Data Control instruction in flakes, and transmission control unit (TCU) carries out signal feedback to instruction parser.
3. flash controller according to claim 1, it is characterized in that, the detailed process of described instruction parser and the mutual control information of flash memory control module is: instruction parser resolves to many group instruction queues with steering order, and each is organized instruction queue distribute to each flash memory control module, each flash memory control module carries out signal feedback to instruction parser.
4. according to the arbitrary described flash controller of claim 1-3, it is characterized in that, the control signal reciprocal process of described interior flash memory control module and each group flash chip is specially: the flash memory control module produces the flash chip operation signal according to the instruction queue that receives, the target flash chip that control is corresponding.
5. according to the arbitrary described flash controller of claim 1-3, it is characterized in that, the flash memory control module is hung a plurality of flash chips down in described each sheet, and described control signal transmission channel is the instruction address multiplex bus, decides the operation that the flash memory control module carries out the target flash chip and the address of operation by address and instruction multiplexing.
6. according to the arbitrary described flash controller of claim 1-3, it is characterized in that, the data message reciprocal process of described transmission control unit (TCU) and each group flash chip is specially: the state of FIFO and flash chip in control signal that transmission control unit (TCU) is sent according to instruction parser and the interface controller, and by string also/and go here and there the mutual of data bus data in outer data bus of conversion and control sheet and the sheet.
7. according to the arbitrary described flash controller of claim 1-3, it is characterized in that the number of described interior flash memory control module is no more than down train value: storage device interface speed value of rounding after divided by 10MBps.
8. flash controller according to claim 7 is characterized in that, for the memory device of USB2.0 interface, the number of described interior flash memory control module is no more than 4.
9. according to the arbitrary described flash controller of claim 1-8, it is characterized in that described flash controller is realized by ASIC, CPLD or FPGA.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100736551A CN100504750C (en) | 2007-03-23 | 2007-03-23 | Flash controller |
| TW96136199A TW200915082A (en) | 2007-03-23 | 2007-09-28 | Flash memory controller |
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| CNB2007100736551A CN100504750C (en) | 2007-03-23 | 2007-03-23 | Flash controller |
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| CN101046725A true CN101046725A (en) | 2007-10-03 |
| CN100504750C CN100504750C (en) | 2009-06-24 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740102A (en) * | 2008-11-11 | 2010-06-16 | 西安奇维测控科技有限公司 | Multi-channel flash memory chip array structure and write-in and read-out methods thereof |
| CN101901116A (en) * | 2010-07-26 | 2010-12-01 | 邓昕岳 | Method for expanding low-capacity NAND flash chips into high-capacity module |
| CN102117243A (en) * | 2010-12-29 | 2011-07-06 | 杭州晟元芯片技术有限公司 | Method for high efficiently debugging by using software breakpoint in Flash memory |
| CN102483685A (en) * | 2009-06-16 | 2012-05-30 | 桑迪士克科技股份有限公司 | Multi-bank non-volatile memory system with satellite file system |
| CN102591823A (en) * | 2011-01-17 | 2012-07-18 | 上海华虹集成电路有限责任公司 | NAND flash controller with instruction queue function |
| CN102768647A (en) * | 2012-06-14 | 2012-11-07 | 记忆科技(深圳)有限公司 | Flash memory controller and control method thereof as well as flash memory storage equipment |
| CN102799391A (en) * | 2012-06-14 | 2012-11-28 | 记忆科技(深圳)有限公司 | Flash memory controller and control method for same, and flash memory storage device |
| CN105320472A (en) * | 2015-12-04 | 2016-02-10 | 上海斐讯数据通信技术有限公司 | Large-capacity NOR Flash storage chip and extension method thereof |
| CN105912307A (en) * | 2016-04-27 | 2016-08-31 | 浪潮(北京)电子信息产业有限公司 | Data processing method and device of Flash controller |
| CN109977070A (en) * | 2017-12-27 | 2019-07-05 | 北京兆易创新科技股份有限公司 | A kind of chip controls method and apparatus |
| CN114090480A (en) * | 2022-01-17 | 2022-02-25 | 英韧科技(南京)有限公司 | Master control embedded instruction and data recording device |
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| TWI454911B (en) * | 2011-10-12 | 2014-10-01 | Phison Electronics Corp | Data writing method, memory controller and memory storage apparatus |
-
2007
- 2007-03-23 CN CNB2007100736551A patent/CN100504750C/en active Active
- 2007-09-28 TW TW96136199A patent/TW200915082A/en not_active IP Right Cessation
Cited By (17)
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| CN101740102B (en) * | 2008-11-11 | 2014-03-26 | 西安奇维测控科技有限公司 | Multi-channel flash memory chip array structure and write-in and read-out methods thereof |
| CN101740102A (en) * | 2008-11-11 | 2010-06-16 | 西安奇维测控科技有限公司 | Multi-channel flash memory chip array structure and write-in and read-out methods thereof |
| CN102483685A (en) * | 2009-06-16 | 2012-05-30 | 桑迪士克科技股份有限公司 | Multi-bank non-volatile memory system with satellite file system |
| CN102483685B (en) * | 2009-06-16 | 2015-08-19 | 桑迪士克科技股份有限公司 | There is many heaps Nonvolatile memory system of ancillary documents system |
| CN101901116A (en) * | 2010-07-26 | 2010-12-01 | 邓昕岳 | Method for expanding low-capacity NAND flash chips into high-capacity module |
| CN102117243A (en) * | 2010-12-29 | 2011-07-06 | 杭州晟元芯片技术有限公司 | Method for high efficiently debugging by using software breakpoint in Flash memory |
| CN102591823A (en) * | 2011-01-17 | 2012-07-18 | 上海华虹集成电路有限责任公司 | NAND flash controller with instruction queue function |
| CN102799391B (en) * | 2012-06-14 | 2015-05-27 | 记忆科技(深圳)有限公司 | Flash memory controller and control method for same, and flash memory storage device |
| CN102799391A (en) * | 2012-06-14 | 2012-11-28 | 记忆科技(深圳)有限公司 | Flash memory controller and control method for same, and flash memory storage device |
| CN102768647A (en) * | 2012-06-14 | 2012-11-07 | 记忆科技(深圳)有限公司 | Flash memory controller and control method thereof as well as flash memory storage equipment |
| CN102768647B (en) * | 2012-06-14 | 2015-11-25 | 记忆科技(深圳)有限公司 | A kind of flash controller and control method, flash memory device |
| CN105320472A (en) * | 2015-12-04 | 2016-02-10 | 上海斐讯数据通信技术有限公司 | Large-capacity NOR Flash storage chip and extension method thereof |
| CN105912307A (en) * | 2016-04-27 | 2016-08-31 | 浪潮(北京)电子信息产业有限公司 | Data processing method and device of Flash controller |
| CN105912307B (en) * | 2016-04-27 | 2018-09-07 | 浪潮(北京)电子信息产业有限公司 | A kind of Flash controller datas processing method and processing device |
| CN109977070A (en) * | 2017-12-27 | 2019-07-05 | 北京兆易创新科技股份有限公司 | A kind of chip controls method and apparatus |
| CN114090480A (en) * | 2022-01-17 | 2022-02-25 | 英韧科技(南京)有限公司 | Master control embedded instruction and data recording device |
| CN114090480B (en) * | 2022-01-17 | 2022-04-22 | 英韧科技(南京)有限公司 | Master control embedded instruction and data recording device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200915082A (en) | 2009-04-01 |
| CN100504750C (en) | 2009-06-24 |
| TWI349857B (en) | 2011-10-01 |
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Effective date of registration: 20101110 Address after: 430074 Hubei city of Wuhan province Kuanshan Road, Optics Valley software park three building C3 room 301-303 building Patentee after: MEMORIGHT (WUHAN)CO.,LTD. Address before: 518057, W2A building, South District, Nanshan District hi tech Industrial Park, Guangdong, Shenzhen Patentee before: Memoright Memoritech (Wuhan) Co.,Ltd. |
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Address after: 430074 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park Building No. two West 3 floor Patentee after: MEMORIGHT (WUHAN) Co.,Ltd. Address before: 430074 Hubei city of Wuhan province Kuanshan Road, Optics Valley software park three building C3 room 301-303 building Patentee before: MEMORIGHT (WUHAN)CO.,LTD. |
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Address after: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Address before: 430074 west 3 floor, two Guan Nan Industrial Park, two new road, Wuhan, Hubei, East Lake. Patentee before: MEMORIGHT (WUHAN) Co.,Ltd. |
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Denomination of invention: flash memory controller Effective date of registration: 20220120 Granted publication date: 20090624 Pledgee: Wuhan area branch of Hubei pilot free trade zone of Bank of China Ltd. Pledgor: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Registration number: Y2022420000020 |
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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Zhiyu Technology Co.,Ltd. Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee before: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. |