CN101030613A - 覆晶式发光二极管封装结构及其封装方法 - Google Patents

覆晶式发光二极管封装结构及其封装方法 Download PDF

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CN101030613A
CN101030613A CNA2006100583956A CN200610058395A CN101030613A CN 101030613 A CN101030613 A CN 101030613A CN A2006100583956 A CNA2006100583956 A CN A2006100583956A CN 200610058395 A CN200610058395 A CN 200610058395A CN 101030613 A CN101030613 A CN 101030613A
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董经文
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Abstract

本发明公开了一种具有高散热效率的覆晶式LED封装结构及其封装方法。本发明的覆晶式发光二极管封装结构，将一LED以覆晶技术配合共晶接合方式封装在一导热基板上，该结构包括：一导热基板，该导热基板表面在一预定区域内形成有一绝缘层，该绝缘层表面形成有一焊垫；以及一LED，该LED以覆晶方式接合在该导热基板上，该LED包括有一第一电极与一第二电极，该第一电极与该导热基板间共晶结合有一共晶层从而电性连接，而该第二电极则与该焊垫电性连接。

Description

覆晶式发光二极管封装结构及其封装方法
技术领域
本发明是关于一种发光二极管(Light Emitting Diode，LED)的封装结构，尤其是关于一种具有高散热效率的覆晶式LED封装结构及其封装方法。
背景技术
LED光源由于具有体积小、耗电量低、使用寿命长等特性，在可预见的未来，将可取代目前灯泡或日光灯源等照明设备或其他显示装置的发光源，而成为最重要的发光元件。然而，为提高发光源的整体亮度，势必要提高发光功率或增加LED装设的数目或密度，但如此设置将大幅增加LED光源的产热量，若该些热量无法尽快导出，将严重影响LED的发光亮度，同时加速LED的劣化状况而缩短使用寿命。
为改善LED的散热效率，现有的如图1所示的LED封装结构。该现有技术中，LED 10是通过共晶(eutectic)结合方式形成一共晶层30而和铝基板20相接合。铝基板20表面预定区域内分别形成一绝缘层21，该绝缘层21表面再形成一焊垫22，各焊垫22分别与第一电极11以及第二电极12以导接线23电性连接。前述方式虽然可通过共晶层30将LED 10所产生的热量通过传导方式，透过铝基板20传出来从而增加散热效率，但因蓝宝石层13的阻碍，致使散热效果不理想，且在该种封装方式中，第一电极11与第二电极12皆位于LED 10发光层的上方，将遮蔽部分的出射光，对于LED 10的发光面积有相当程度的缩减，而影响其发光效率。
因此，为避免前述缺失，即产生如图2所示以覆晶(flip chip)接合方式进行封装的技术。其中，LED 10在倒置后与印刷电路板40相接合。印刷电路板40在表面预定位置分别设有一焊垫41，焊垫41和印刷电路板40中的导接线42电性连接。LED 10接合时，通过金属凸块43分别将第一电极11与第二电极12与焊垫41相连接。以此封装方式虽然可改善前述光遮蔽所产生发光效率减少的缺点，但LED 10所产生的热量却仅可透过金属凸块43传导至印刷电路板40，一方面传导的接触面积小，另一方面印刷电路板40的导热率有限，而且无法使LED 10整体散热效率能够有效地改善，因而仍存有前述LED劣化与因受高温而使光度缩减的缺点。
发明内容
为了改善现有LED封装时发光效率的不足，同时提升LED的散热效率，本发明将提供一种以覆晶技术将LED以共晶方式与导热基板相结合的封装结构与封装方法，使LED发光部分不受局限，而能维持最佳的发光效率，并且同时能将所产生的热量以较大的接触面积和热传导效率，传导至高导热系数的导热基板上，不仅能大幅提高LED的散热效能，使LED避免处于高温之下，从而增加LED的使用寿命，而且能进一步提高LED的发光亮度。
本发明覆晶式发光二极管封装结构，包括：一导热基板，该导热基板表面在一预定区域内形成一绝缘层，该绝缘层表面形成一焊垫；以及一LED，该LED以覆晶方式接合在该导热基板上，该LED包括有一第一电极与一第二电极，该第一电极与该导热基板间共晶结合有一共晶层从而电性连接，而该第二电极与该焊垫电性连接。共晶层可以先在该导热基板上该第一电极相对应处镀上一镀金层后，再与该第一电极加热共晶而形成；其亦可在该导热基板上该第一电极相对应处与该第一电极间夹设一金片，再加热共晶而形成。其中，该导热基板可以是一铝(Al)板、铜(Cu)板、氮化铝(AlN)或其他高导热系数的金属或介质层，但并不仅限于此。
本发明的封装结构，LED发光层所发散的光线不会受到电极的遮蔽，所以有较佳的发光效率。且其所产生的热能可以通过较大接触面积的共晶层直接导出，而不需要和现有技术那样透过导热系数较差的蓝宝石层传递，所以能迅速将热能传导至高导热系数的导热基板上，使LED温度能够尽快降低，因而使得LED不但能够维持较佳的发光效率，而且有最佳的导热散热效率。
以下将配合图式进一步说明本发明的实施方式，下述所列举的实施例是用来阐明本发明，而不是用来限定本发明的范围，任何熟悉本技术领域的技术人员，在不脱离本发明的精神和范围内，都可以做出一些变化或者润饰，因此本发明的保护范围应当以权利要求的保护范围为准。
附图说明
图1是现有LED封装结构的示意图。
图2是现有覆晶式LED封装结构的示意图。
图3是本发明实施例的示意图。
图4是本发明封装方法实施例的示意图。
图5是本发明另一封装方法实施例的示意图。
具体实施方式
参见图3，该图是本发明实施例的示意图。本发明覆晶式发光二极管封装结构，包括一LED 50与一导热基板60，该LED 50是以覆晶方式封装于导热基板60上。
LED 50，其包括一第一电极51与一第二电极52，第一电极51与第二电极52位于LED 50表面的同侧。电极可利用物理蒸镀(Physical VaporDeposition，PVD)方式镀上钛(Ti)、铝或金(Au)等金属层，再经金属融合而制成。在一般氮化镓(GaN)LED晶粒上，第一电极51可与P型氮化镓(P-GaN)层电性连接而成为P型电极，而第二电极52则可与N型氮化镓(n+GaN)层电性连接而成为N型电极，电极设置的方式在此仅为示范说明用，并不限于该上述方式。此外，为配合本发明覆晶接合方式，第一电极51在蒸镀形成时可扩大其面积并配合厚度的调整，使在将来共晶接合时，第一电极51与第二电极52能够紧密接合在导热基板60上，并同时有较大的接触面积。通过第一电极51以及第二电极52与电流导通后，就可以在LED 50内产生亮光。
导热基板60，是一高导热系数的铝板(231W/m×K)、铜板(385W/m×K)或氮化铝(320W/m×K)板，但并不仅限于此，其导热系数在室温下可达100W/m×K以上者为较佳。在本发明覆晶结合方式中，导热基板60除具导热散热功能外，还必须能够导电，故该导热基板60也需要导电性好的材料，前述数种材料中以铝板、铜板为较佳。导热基板60与LED 50接合前，先在导热基板60表面上与第二电极52相对应的预定定义区域内形成一绝缘层61。绝缘层61可利用二氧化硅(SiO2)或氮化硅(Si3N4)以化学气相沉积(Chemical Vapor Deposition，CVD)沉积在导热基板60表面，而沉积所利用的材料和方式并不仅限于前面所属的材料和方式。随后，再在绝缘层61表面形成一金属材料的焊垫62，作为与第二电极52电性连接的介质层。由于第一电极51已与具有导电性的导热基板60电性连接，所以不需要进行打线，而第二电极52则可通过与焊垫62的电性连接，打线于焊垫62上，而形成电流导通的状态。
LED50以覆晶方式接合在导热基板60时，第二电极52可与焊垫62电性连接，而第一电极51则与导热基板60相对应表面间同时共晶接合一共晶层63。因此，LED 50所产生的高热可通过第一电极51并透过共晶层63直接传导到具有高导热系数的导热基板60上，迅速将热量加以散逸，而能够使LED50维持适当的温度。和现有技术相比，利用覆晶方式封装除了可以使LED 50有较大发光面积外，最重要的是可将LED 50发光层所产生的热量直接由更为接近的共晶层63导出，而无需和现有技术那样透过导热系数较差的蓝宝石层53，所以能明显提升其导热性。另一方面，透过大面积共晶层的接触传导，也能增加导热速率，而大幅改善现有技术中利用金属凸块导热速率不足的缺点。
共晶层30形成的方式请参阅图4和图5。共晶接合前可先在导热基板60上该第一电极51相对应处镀上有一镀金层631，再与该第一电极51在适当温度处理下进行共晶接合。此外，其也可以在导热基板60上该第一电极51相对应处与该第一电极51之间夹设一金片632(请参阅图5)，再在适当温度处理下进行共晶接合。当第一电极51具铜金属层时，则可形成一铜/金或铜/金/铝的共晶层63。共晶接合所使用的金属与方法，并不限于前述的金属和方法，但以导热系数较高的金属为佳。

Claims (10)

1.一种覆晶式发光二极管封装结构，其特征在于包括：
一导热基板，该导热基板表面在一预定区域内形成一绝缘层，该绝缘层表面形成一焊垫；以及
一LED，该LED以覆晶方式接合在该导热基板上，该LED包括有一第一电极与一第二电极，该第一电极与该导热基板间共晶结合有一共晶层从而电性连接，而该第二电极则与该焊垫电性连接。
2.如权利要求1所述的覆晶式发光二极管封装结构，其特征在于，所述导热基板是一铝板。
3.如权利要求1所述的覆晶式发光二极管封装结构，其特征在于，所述导热基板是一铜板。
4.如权利要求1、2或3所述的覆晶式发光二极管封装结构，其特征在于，所述绝缘层是一二氧化硅层。
5.如权利要求1所述的覆晶式发光二极管封装结构，其特征在于，所述共晶层是铜/金共晶。
6.如权利要求1所述的覆晶式发光二极管封装结构，其特征在于，所述共晶层是铜/金/铝共晶。
7.一种覆晶式发光二极管封装方法，其特征在于包括下列步骤：
(1)提供一导热基板；
(2)在该导热基板表面一预定区域内形成一绝缘层，并在该绝缘层表面形成一焊垫；
(3)提供一LED，该LED包括一第一电极与一第二电极；以及
(4)将该LED以覆晶方式进行接合，结合时在该第一电极与该导热基板间共晶接合一共晶层从而电性连接，并同时使该第二电极与该焊垫电性连接。
8.如权利要求7所述的覆晶式发光二极管封装方法，其特征在于，所述该导热基板是一铝板。
9.如权利要求7或8所述的覆晶式发光二极管封装方法，其特征在于，所述共晶层是先在该导热基板上该第一电极相对应处镀上一镀金层，再与该第一电极加热共晶而形成。
10.如权利要求7或8所述的覆晶式发光二极管封装方法，其特征在于，所述共晶层是在该导热基板上该第一电极相对应处与该第一电极间夹设一金片，再加热共晶而形成。
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CN101950782B (zh) * 2009-07-10 2013-01-09 财团法人工业技术研究院 低温形成反射性发光二极管固晶接合结构的方法
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
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CN102097420A (zh) * 2009-12-10 2011-06-15 鸿富锦精密工业（深圳）有限公司 发光二极管及其制造方法
CN102097420B (zh) * 2009-12-10 2014-08-20 鸿富锦精密工业（深圳）有限公司 发光二极管及其制造方法
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