CN101027774B - 具有光保护层的芯片 - Google Patents

具有光保护层的芯片 Download PDF

Info

Publication number
CN101027774B
CN101027774B CN2005800319355A CN200580031935A CN101027774B CN 101027774 B CN101027774 B CN 101027774B CN 2005800319355 A CN2005800319355 A CN 2005800319355A CN 200580031935 A CN200580031935 A CN 200580031935A CN 101027774 B CN101027774 B CN 101027774B
Authority
CN
China
Prior art keywords
chip
integrated circuit
dielectric
mirror coating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800319355A
Other languages
English (en)
Chinese (zh)
Other versions
CN101027774A (zh
Inventor
克里斯蒂安·岑茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN101027774A publication Critical patent/CN101027774A/zh
Application granted granted Critical
Publication of CN101027774B publication Critical patent/CN101027774B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
CN2005800319355A 2004-07-26 2005-07-20 具有光保护层的芯片 Expired - Fee Related CN101027774B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04103562.7 2004-07-26
EP04103562 2004-07-26
PCT/IB2005/052426 WO2006013507A1 (en) 2004-07-26 2005-07-20 Chip with light protection layer

Publications (2)

Publication Number Publication Date
CN101027774A CN101027774A (zh) 2007-08-29
CN101027774B true CN101027774B (zh) 2011-10-26

Family

ID=35423325

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800319355A Expired - Fee Related CN101027774B (zh) 2004-07-26 2005-07-20 具有光保护层的芯片

Country Status (6)

Country Link
US (1) US20080093712A1 (enExample)
EP (1) EP1774592A1 (enExample)
JP (1) JP2008507851A (enExample)
KR (1) KR20070039600A (enExample)
CN (1) CN101027774B (enExample)
WO (1) WO2006013507A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230852B2 (en) 2013-02-25 2016-01-05 Texas Instruments Incorporated Integrated circuit (IC) having electrically conductive corrosion protecting cap over bond pads
DE102014100469A1 (de) 2013-11-29 2015-06-03 Epcos Ag Elektronisches Bauelement und Verwendung desselben
US9697455B2 (en) * 2014-12-26 2017-07-04 Avery Dennison Retail Information Services, Llc Using reactive coupling of a printed RFID chip on a strap to allow the printed material to be over-laminated with a barrier film against oxygen and moisture ingress
CN113130722B (zh) 2015-09-25 2025-08-12 美题隆公司 利用通过焊接附着的磷光体元件的高光功率的光转换装置
US11205625B2 (en) 2019-04-12 2021-12-21 Invensas Bonding Technologies, Inc. Wafer-level bonding of obstructive elements
US11373963B2 (en) 2019-04-12 2022-06-28 Invensas Bonding Technologies, Inc. Protective elements for bonded structures
US11610846B2 (en) 2019-04-12 2023-03-21 Adeia Semiconductor Bonding Technologies Inc. Protective elements for bonded structures including an obstructive element
US11385278B2 (en) 2019-05-23 2022-07-12 Invensas Bonding Technologies, Inc. Security circuitry for bonded structures
WO2021196039A1 (zh) * 2020-03-31 2021-10-07 深圳市汇顶科技股份有限公司 安全芯片、安全芯片的制造方法和电子设备
US12278255B2 (en) * 2021-06-11 2025-04-15 Raytheon Company Thin film obscurant for microelectronics
EP4371153A4 (en) * 2021-07-16 2025-05-21 Adeia Semiconductor Bonding Technologies Inc. OPTICALLY OBSTRUCTIVE PROTECTIVE ELEMENT FOR BONDED STRUCTURES
JP2024528964A (ja) 2021-08-02 2024-08-01 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ボンデッド構造体用の保護半導体素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2228298B1 (enExample) * 1973-05-03 1978-01-06 Ibm
US5468990A (en) * 1993-07-22 1995-11-21 National Semiconductor Corp. Structures for preventing reverse engineering of integrated circuits
JPH07301824A (ja) * 1994-05-09 1995-11-14 Seiko Instr Inc 光弁用半導体装置
FR2735437B1 (fr) * 1995-06-19 1997-08-14 Sevylor International Vehicule roulant, notamment robot de nettoyage en particulier de piscine, a changement automatique de direction de deplacement devant un obstacle
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
DE19840251B4 (de) * 1998-09-03 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltungschip, insbesondere Transponder mit Lichtschutz
US6515304B1 (en) * 2000-06-23 2003-02-04 International Business Machines Corporation Device for defeating reverse engineering of integrated circuits by optical means
US6686977B2 (en) * 2001-07-24 2004-02-03 Three-Five Systems, Inc. Liquid crystal on silicon device
GB2405531B (en) * 2002-05-14 2006-04-12 Hrl Lab Llc Integrated circuit with reverse engineering protection
US6933013B2 (en) * 2003-10-14 2005-08-23 Photon Dynamics, Inc. Vacuum deposition of dielectric coatings on volatile material

Also Published As

Publication number Publication date
WO2006013507A1 (en) 2006-02-09
EP1774592A1 (en) 2007-04-18
US20080093712A1 (en) 2008-04-24
CN101027774A (zh) 2007-08-29
JP2008507851A (ja) 2008-03-13
KR20070039600A (ko) 2007-04-12

Similar Documents

Publication Publication Date Title
CN101027774B (zh) 具有光保护层的芯片
US10012897B2 (en) Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
CN106471603B (zh) 具有多层堆叠的极紫外反射元件及其制造方法
EP2128665B1 (en) Optical filter that uses localized plasmons
CN106471604B (zh) 具有无定形层的远紫外反射元件及其制造方法
US7326502B2 (en) Multilayer coatings for EUV mask substrates
CN106663601A (zh) 极紫外线覆盖层及其的制造与光刻方法
CN102549461A (zh) 用于微光刻的照明光学单元
US6710351B2 (en) EUV mirror based absolute incident flux detector
JP4423119B2 (ja) 反射防止膜及びそれを用いた光学素子
JP2023029334A (ja) 導電性光半導体コーティングの装置及び方法
US6593037B1 (en) EUV mask or reticle having reduced reflections
US20040263981A1 (en) Diffractive optical element with anti-reflection coating
US6600602B2 (en) Diffraction grating and uses of a diffraction grating
US10139539B2 (en) Polarization system
JP7447074B2 (ja) 極紫外線マスクブランクの欠陥の低減
US20190177553A1 (en) Antireflection Film and Its Use on a Substrate
EP1960835B1 (fr) Masque de lithographie en reflexion et procede de fabrication du masque
JP3214964B2 (ja) 回折光学素子
US20070231713A1 (en) Anti-reflective coating for out-of-band illumination with lithography optical systems
US9606266B2 (en) Optical element, optical element array, and solid-state image-pickup apparatus
US11402543B2 (en) All silicon broadband ultra-violet metasurfaces
TW202303267A (zh) 多層極紫外線反射器
JP7628846B2 (ja) 半導体基板および半導体基板の製造方法
JP5950535B2 (ja) 反射型マスクブランクおよび反射型マスク

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20080404

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20080404

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111026

Termination date: 20130720