JP7447074B2 - 極紫外線マスクブランクの欠陥の低減 - Google Patents
極紫外線マスクブランクの欠陥の低減 Download PDFInfo
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- 230000007547 defect Effects 0.000 title description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 138
- 229910052750 molybdenum Inorganic materials 0.000 claims description 138
- 239000011733 molybdenum Substances 0.000 claims description 138
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 120
- 229910052710 silicon Inorganic materials 0.000 claims description 119
- 239000010703 silicon Substances 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000005240 physical vapour deposition Methods 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 119
- 230000008021 deposition Effects 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000009467 reduction Effects 0.000 description 8
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 244000241796 Christia obcordata Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WOUPYJKFGJZQMH-UHFFFAOYSA-N [Nb].[Ru] Chemical compound [Nb].[Ru] WOUPYJKFGJZQMH-UHFFFAOYSA-N 0.000 description 1
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 oxide Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- AJTVWPGZWVJMEA-UHFFFAOYSA-N ruthenium tungsten Chemical compound [Ru].[Ru].[W].[W].[W] AJTVWPGZWVJMEA-UHFFFAOYSA-N 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
Description
Claims (11)
- 極紫外線(EUV)マスクブランクを製造する方法であって、
一の開口部を有する回転シールドと、ケイ素ターゲット、前記ケイ素ターゲットの第1の側に隣接する第1のモリブデンターゲットおよび前記ケイ素ターゲットの第2の側に隣接する第2のモリブデンターゲットを含む少なくとも3つのターゲットと、を備えるマルチカソード物理気相堆積チャンバ内に、基板を配置することと、
前記回転シールドを回転させて、前記一の開口部を前記第1のモリブデンターゲットに整列させ、前記第1のモリブデンターゲットから第1のモリブデン層を前記基板上に堆積させることと、
前記回転シールドを回転させて、前記一の開口部を前記ケイ素ターゲットに整列させ、前記ケイ素ターゲットからケイ素層を前記第1のモリブデン層上に堆積させることと、
前記回転シールドを回転させて、前記一の開口部を前記第2のモリブデンターゲットに整列させ、前記第2のモリブデンターゲットから第2のモリブデン層を前記ケイ素層上に堆積させることと、
を含む、方法。 - 前記第1のモリブデン層が、1nmから10nmの範囲の厚さを有し、前記ケイ素層が、1nmから10nmの範囲の厚さを有する、請求項1に記載の方法。
- 前記回転シールドを回転させることと、前記第1のモリブデンターゲット、前記ケイ素ターゲット、および前記第2のモリブデンターゲットのうちの1つの選択されたターゲットを利用すること、を繰り返して、モリブデン層とケイ素層の交互の層を含む多層スタックを形成し、前記モリブデン層と前記ケイ素層の各々は極紫外線を反射する反射層である、請求項1に記載の方法。
- 前記多層スタック上にキャッピング層を堆積させることを、さらに含む、請求項3に記載の方法。
- 極紫外線(EUV)マスクブランクを製造する方法であって、
一の開口部を有する回転シールドを回転させて、前記一の開口部を、ケイ素ターゲットの第1の側に隣接する第1のモリブデンターゲットに整列させ、前記第1のモリブデンターゲットから、第1のモリブデン層を基板上に堆積させることと、
前記回転シールドを回転させて、前記一の開口部を前記ケイ素ターゲットに整列させ、前記第1のモリブデン層上にケイ素層を堆積させることと、
前記回転シールドを回転させて、前記一の開口部を、前記ケイ素ターゲットの第2の側に隣接する第2のモリブデンターゲットに整列させ、前記第2のモリブデンターゲットから、第2のモリブデン層を前記ケイ素層上に堆積させることと、
によって前記基板上に反射層の多層スタックを形成することを含む、方法。 - 前記第1のモリブデン層が、1nmから10nmの範囲の厚さを有する、請求項5に記載の方法。
- 前記第2のモリブデン層が、1nmから10nmの範囲の厚さを有する、請求項5に記載の方法。
- 前記ケイ素層が、1nmから10nmの範囲の厚さを有する、請求項5に記載の方法。
- 前記回転シールドを回転させることと、前記第1のモリブデンターゲット、前記ケイ素ターゲット、および前記第2のモリブデンターゲットのうちの1つの選択されたターゲットを利用すること、を繰り返して、モリブデンとケイ素の交互の層を含む前記多層スタックを形成する、請求項5に記載の方法。
- 前記多層スタック上にキャッピング層を堆積させることを、さらに含む、請求項5に記載の方法。
- 真空を生成するための基板ハンドリング真空チャンバ、
前記基板ハンドリング真空チャンバ内にロードされた基板を前記真空中で搬送するための基板ハンドリングプラットフォーム、
ターゲットを利用可能にするための一の開口部を有する回転シールド、ならびに
ケイ素ターゲット、前記ケイ素ターゲットの第1の側に隣接する第1のモリブデンターゲットおよび前記ケイ素ターゲットの第2の側に隣接する第2のモリブデンターゲットを含む少なくとも3つのターゲット、
を備える極紫外線(EUV)マスクブランク製造システムであって、前記回転シールドを回転させて、前記一の開口部を前記第1のモリブデンターゲットに整列させ、第1のモリブデン層を前記基板上に堆積させることと、前記回転シールドを回転させて、前記一の開口部を前記ケイ素ターゲットに整列させ、ケイ素層を前記第1のモリブデン層上に堆積させることと、前記回転シールドを回転させて、前記一の開口部を前記第2のモリブデンターゲットに整列させ、第2のモリブデン層を前記ケイ素層上に堆積させることが可能である、
極紫外線(EUV)マスクブランク製造システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862694744P | 2018-07-06 | 2018-07-06 | |
US62/694,744 | 2018-07-06 | ||
US16/502,749 US11275300B2 (en) | 2018-07-06 | 2019-07-03 | Extreme ultraviolet mask blank defect reduction |
US16/502,749 | 2019-07-03 | ||
PCT/US2019/040682 WO2020010303A1 (en) | 2018-07-06 | 2019-07-05 | Extreme ultraviolet mask blank defect reduction |
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JP2021529996A JP2021529996A (ja) | 2021-11-04 |
JP7447074B2 true JP7447074B2 (ja) | 2024-03-11 |
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JP2021500055A Active JP7447074B2 (ja) | 2018-07-06 | 2019-07-05 | 極紫外線マスクブランクの欠陥の低減 |
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US (1) | US11275300B2 (ja) |
JP (1) | JP7447074B2 (ja) |
KR (1) | KR102529842B1 (ja) |
WO (1) | WO2020010303A1 (ja) |
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JP2022045936A (ja) * | 2020-09-10 | 2022-03-23 | 信越化学工業株式会社 | Euvマスクブランク用多層反射膜付き基板、その製造方法及びeuvマスクブランク |
KR20220114913A (ko) | 2021-02-09 | 2022-08-17 | 주식회사 엘지에너지솔루션 | 커넥터의 효율적인 레이아웃을 위한 버스바 프레임을 구비한 배터리 모듈 및 이를 포함하는 배터리 팩. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004331998A (ja) | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
JP2007119920A (ja) | 2005-10-28 | 2007-05-17 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | ダイヤモンド状カーボンフィルム |
JP4832781B2 (ja) | 2005-03-29 | 2011-12-07 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス表示装置 |
JP2012144751A (ja) | 2011-01-06 | 2012-08-02 | Nikon Corp | 成膜装置及び成膜方法 |
JP2014130977A (ja) | 2012-12-29 | 2014-07-10 | Hoya Corp | 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832781A (ja) | 1971-09-02 | 1973-05-02 | ||
JPH02159374A (ja) | 1988-12-13 | 1990-06-19 | Ube Ind Ltd | イオンビームスパッタリング方法 |
US6132566A (en) | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6396900B1 (en) | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US6740209B2 (en) | 2001-07-27 | 2004-05-25 | Anelva Corporation | Multilayer film deposition apparatus, and method and apparatus for manufacturing perpendicular-magnetic-recording media |
US6606199B2 (en) | 2001-10-10 | 2003-08-12 | Honeywell International Inc. | Graded thickness optical element and method of manufacture therefor |
US6589398B1 (en) | 2002-03-28 | 2003-07-08 | Novellus Systems, Inc. | Pasting method for eliminating flaking during nitride sputtering |
US20050133361A1 (en) | 2003-12-12 | 2005-06-23 | Applied Materials, Inc. | Compensation of spacing between magnetron and sputter target |
JP2005234209A (ja) | 2004-02-19 | 2005-09-02 | Shin Etsu Chem Co Ltd | ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びパターン転写方法 |
WO2006030627A1 (ja) * | 2004-09-17 | 2006-03-23 | Asahi Glass Company, Limited | Euvリソグラフィ用反射型マスクブランクスおよびその製造方法 |
US20060231388A1 (en) | 2005-04-14 | 2006-10-19 | Ravi Mullapudi | Multi-station sputtering and cleaning system |
JP2008109060A (ja) * | 2005-11-10 | 2008-05-08 | Asahi Glass Co Ltd | Euvリソグラフィ用反射型マスクブランクの多層反射膜を成膜する方法、ならびにeuvリソグラフィ用反射型マスクブランクの製造方法 |
JP2008026093A (ja) | 2006-07-20 | 2008-02-07 | Canon Inc | 多層膜反射鏡およびその製造方法 |
TWI427334B (zh) | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
WO2011108470A1 (ja) | 2010-03-02 | 2011-09-09 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクおよびその製造方法 |
KR101625382B1 (ko) | 2010-04-29 | 2016-05-30 | (주)에스앤에스텍 | 극자외선용 반사형 블랭크 마스크, 포토마스크 및 그의 제조방법 |
WO2012068467A2 (en) | 2010-11-19 | 2012-05-24 | University Of Delaware | Hybrid dielectric - metallic back surface reflector for photovoltaic applications |
US8426085B2 (en) | 2010-12-02 | 2013-04-23 | Intermolecular, Inc. | Method and apparatus for EUV mask having diffusion barrier |
JP2012149339A (ja) | 2010-12-28 | 2012-08-09 | Canon Anelva Corp | スパッタリング装置、及び電子デバイスの製造方法 |
US20130062610A1 (en) | 2011-09-14 | 2013-03-14 | Andrew Clark | Lattice matched crystalline reflector |
US8658333B2 (en) | 2012-06-04 | 2014-02-25 | Nanya Technology Corporation | Reflective mask |
JP5922795B2 (ja) | 2012-11-30 | 2016-05-24 | キヤノンアネルバ株式会社 | スパッタリング装置および基板処理装置 |
US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
JP2015086438A (ja) | 2013-10-31 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置 |
US9261774B2 (en) | 2013-11-22 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity |
US9581890B2 (en) | 2014-07-11 | 2017-02-28 | Applied Materials, Inc. | Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof |
US9739913B2 (en) | 2014-07-11 | 2017-08-22 | Applied Materials, Inc. | Extreme ultraviolet capping layer and method of manufacturing and lithography thereof |
US10468238B2 (en) | 2015-08-21 | 2019-11-05 | Applied Materials, Inc. | Methods and apparatus for co-sputtering multiple targets |
US10431440B2 (en) | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
-
2019
- 2019-07-03 US US16/502,749 patent/US11275300B2/en active Active
- 2019-07-05 WO PCT/US2019/040682 patent/WO2020010303A1/en active Application Filing
- 2019-07-05 KR KR1020217003494A patent/KR102529842B1/ko active IP Right Grant
- 2019-07-05 JP JP2021500055A patent/JP7447074B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004331998A (ja) | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
JP4832781B2 (ja) | 2005-03-29 | 2011-12-07 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス表示装置 |
JP2007119920A (ja) | 2005-10-28 | 2007-05-17 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | ダイヤモンド状カーボンフィルム |
JP2012144751A (ja) | 2011-01-06 | 2012-08-02 | Nikon Corp | 成膜装置及び成膜方法 |
JP2014130977A (ja) | 2012-12-29 | 2014-07-10 | Hoya Corp | 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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