CN101015058A - 使用隔离阱的mos变容二极管 - Google Patents

使用隔离阱的mos变容二极管 Download PDF

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Publication number
CN101015058A
CN101015058A CNA2005800288291A CN200580028829A CN101015058A CN 101015058 A CN101015058 A CN 101015058A CN A2005800288291 A CNA2005800288291 A CN A2005800288291A CN 200580028829 A CN200580028829 A CN 200580028829A CN 101015058 A CN101015058 A CN 101015058A
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China
Prior art keywords
well region
conduction type
substrate
type
region
Prior art date
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Pending
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CNA2005800288291A
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English (en)
Chinese (zh)
Inventor
道格拉斯·D.·库尔伯格
道格拉斯·B.·赫施伯格
罗伯特·M.·拉塞尔
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101015058A publication Critical patent/CN101015058A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA2005800288291A 2004-08-27 2005-08-05 使用隔离阱的mos变容二极管 Pending CN101015058A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,144 US7714412B2 (en) 2004-08-27 2004-08-27 MOS varactor using isolation well
US10/711,144 2004-08-27

Publications (1)

Publication Number Publication Date
CN101015058A true CN101015058A (zh) 2007-08-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800288291A Pending CN101015058A (zh) 2004-08-27 2005-08-05 使用隔离阱的mos变容二极管

Country Status (7)

Country Link
US (1) US7714412B2 (enExample)
EP (1) EP1800343A4 (enExample)
JP (1) JP2008511989A (enExample)
KR (1) KR101013251B1 (enExample)
CN (1) CN101015058A (enExample)
TW (1) TWI353654B (enExample)
WO (1) WO2006026055A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924142B (zh) * 2009-06-17 2011-09-14 中国科学院微电子研究所 一种GaAs肖特基变容二极管及其制作方法
CN106531780A (zh) * 2015-09-09 2017-03-22 爱思开海力士有限公司 Mos变容管以及包括mos变容管的半导体集成设备

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US20070013026A1 (en) * 2005-07-12 2007-01-18 Ching-Hung Kao Varactor structure and method for fabricating the same
US7936041B2 (en) * 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US20080149983A1 (en) * 2006-12-20 2008-06-26 International Business Machines Corporation Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
US7598560B2 (en) * 2007-03-30 2009-10-06 Kavalieros Jack T Hetero-bimos injection process for non-volatile flash memory
CN102057383B (zh) * 2008-04-07 2013-11-20 阿利安科技有限公司 利用光对rfid标签进行子集选择
US7804119B2 (en) * 2008-04-08 2010-09-28 International Business Machines Corporation Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit
TWI513011B (zh) * 2011-07-06 2015-12-11 United Microelectronics Corp 差動可變電容元件
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
JP2013143446A (ja) * 2012-01-10 2013-07-22 Sony Corp 容量素子、半導体装置及び電子機器
US8586439B1 (en) 2012-07-11 2013-11-19 International Business Machines Corporation Inversion mode varactor
CN106485290B (zh) 2015-08-24 2019-08-13 瑞章科技有限公司 增强标签反向散射能量的装置及方法
US9960284B2 (en) * 2015-10-30 2018-05-01 Globalfoundries Inc. Semiconductor structure including a varactor
US9882066B1 (en) 2017-02-10 2018-01-30 Qualcomm Incorporated Transcap manufacturing techniques without a silicide-blocking mask
US10840387B2 (en) * 2018-04-05 2020-11-17 Qualcomm Incorporated Buried oxide transcap devices
US10622491B2 (en) 2018-06-21 2020-04-14 Qualcomm Incorporated Well doping for metal oxide semiconductor (MOS) varactor
US10958216B2 (en) * 2019-08-22 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and operation method thereof

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US5742090A (en) * 1996-04-04 1998-04-21 Advanced Micro Devices, Inc. Narrow width trenches for field isolation in integrated circuits
EP0902483B1 (en) 1997-09-11 2008-11-12 Telefonaktiebolaget LM Ericsson (publ) Electrical device comprising a voltage dependant capacitance and method of manufacturing the same
US6172378B1 (en) * 1999-05-03 2001-01-09 Silicon Wave, Inc. Integrated circuit varactor having a wide capacitance range
US6351020B1 (en) * 1999-11-12 2002-02-26 Motorola, Inc. Linear capacitor structure in a CMOS process
US6566971B1 (en) 2000-02-24 2003-05-20 Broadcom Corporation Method and circuitry for implementing a differentially tuned varactor-inductor oscillator
US6407412B1 (en) 2000-03-10 2002-06-18 Pmc-Sierra Inc. MOS varactor structure with engineered voltage control range
US6917095B1 (en) * 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
US6521939B1 (en) 2000-09-29 2003-02-18 Chartered Semiconductor Manufacturing Ltd. High performance integrated varactor on silicon
US7053465B2 (en) 2000-11-28 2006-05-30 Texas Instruments Incorporated Semiconductor varactor with reduced parasitic resistance
JP5073136B2 (ja) * 2001-08-24 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
KR100425578B1 (ko) 2001-09-17 2004-04-03 한국전자통신연구원 ＳｉＧｅ 이종접합 바이폴라 트랜지스터를 이용하여개선된 Ｑ-인자 특성을 갖는 버렉터 및 그 제조 방법
US6542043B1 (en) 2001-10-16 2003-04-01 Broadcom Corporation All PMOS fully differential voltage controlled oscillator
SE520590C2 (sv) 2001-11-15 2003-07-29 Ericsson Telefon Ab L M Halvledarprocess och PMOS-varaktor
US6521506B1 (en) 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US6670654B2 (en) 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP3877597B2 (ja) 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
US6608362B1 (en) * 2002-08-20 2003-08-19 Chartered Semiconductor Manufacturing Ltd. Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components
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US6847095B2 (en) * 2003-04-01 2005-01-25 Texas Instruments Incorporated Variable reactor (varactor) with engineered capacitance-voltage characteristics
JP4636785B2 (ja) * 2003-08-28 2011-02-23 パナソニック株式会社 半導体装置及びその製造方法
US6949440B2 (en) * 2003-11-11 2005-09-27 United Microelectronics Corp. Method of forming a varactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924142B (zh) * 2009-06-17 2011-09-14 中国科学院微电子研究所 一种GaAs肖特基变容二极管及其制作方法
CN106531780A (zh) * 2015-09-09 2017-03-22 爱思开海力士有限公司 Mos变容管以及包括mos变容管的半导体集成设备
CN106531780B (zh) * 2015-09-09 2020-08-14 爱思开海力士有限公司 Mos变容管以及包括mos变容管的半导体集成设备

Also Published As

Publication number Publication date
US20060043454A1 (en) 2006-03-02
TW200610103A (en) 2006-03-16
US7714412B2 (en) 2010-05-11
JP2008511989A (ja) 2008-04-17
WO2006026055A2 (en) 2006-03-09
EP1800343A2 (en) 2007-06-27
KR20070053219A (ko) 2007-05-23
TWI353654B (en) 2011-12-01
KR101013251B1 (ko) 2011-02-09
WO2006026055A3 (en) 2006-12-14
EP1800343A4 (en) 2008-11-19

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