CN100580552C - 具有无机粒子的多光子活性组合物及制造结构的方法 - Google Patents
具有无机粒子的多光子活性组合物及制造结构的方法 Download PDFInfo
- Publication number
- CN100580552C CN100580552C CN03823673A CN03823673A CN100580552C CN 100580552 C CN100580552 C CN 100580552C CN 03823673 A CN03823673 A CN 03823673A CN 03823673 A CN03823673 A CN 03823673A CN 100580552 C CN100580552 C CN 100580552C
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- CN
- China
- Prior art keywords
- multiphoton
- active
- composition
- particles
- active composition
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- Expired - Fee Related
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
- G03F7/0295—Photolytic halogen compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Polymerisation Methods In General (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/262,927 US7265161B2 (en) | 2002-10-02 | 2002-10-02 | Multi-photon reactive compositions with inorganic particles and method for fabricating structures |
| US10/262,927 | 2002-10-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1688937A CN1688937A (zh) | 2005-10-26 |
| CN100580552C true CN100580552C (zh) | 2010-01-13 |
Family
ID=32041903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN03823673A Expired - Fee Related CN100580552C (zh) | 2002-10-02 | 2003-09-26 | 具有无机粒子的多光子活性组合物及制造结构的方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7265161B2 (enExample) |
| EP (1) | EP1546805A1 (enExample) |
| JP (1) | JP4723248B2 (enExample) |
| KR (1) | KR20050071538A (enExample) |
| CN (1) | CN100580552C (enExample) |
| AU (1) | AU2003279024A1 (enExample) |
| BR (1) | BR0314958A (enExample) |
| CA (1) | CA2499868A1 (enExample) |
| WO (1) | WO2004031862A1 (enExample) |
Families Citing this family (66)
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| US7265161B2 (en) * | 2002-10-02 | 2007-09-04 | 3M Innovative Properties Company | Multi-photon reactive compositions with inorganic particles and method for fabricating structures |
| US7381516B2 (en) * | 2002-10-02 | 2008-06-03 | 3M Innovative Properties Company | Multiphoton photosensitization system |
| US7237893B2 (en) * | 2001-12-28 | 2007-07-03 | Chang Shiao H | Light adjustable lenses capable of post-fabrication power modification via multi-photon processes |
| US7232650B2 (en) * | 2002-10-02 | 2007-06-19 | 3M Innovative Properties Company | Planar inorganic device |
| WO2005015268A2 (en) * | 2003-08-08 | 2005-02-17 | Calhoun Vision | Light adjustable lenses capable of post-fabrication power modification via multi-photon processes |
| US20050036179A1 (en) * | 2003-08-13 | 2005-02-17 | General Electric Company | Holographic storage medium comprising metal-containing high refractive index region, and storage article containing same |
| AU2003304694A1 (en) * | 2003-12-05 | 2005-08-12 | 3M Innovative Properties Company | Process for producing photonic crystals and controlled defects therein |
| US20050124712A1 (en) * | 2003-12-05 | 2005-06-09 | 3M Innovative Properties Company | Process for producing photonic crystals |
| US7771803B2 (en) * | 2004-10-27 | 2010-08-10 | Palo Alto Research Center Incorporated | Oblique parts or surfaces |
| US7710371B2 (en) * | 2004-12-16 | 2010-05-04 | Xerox Corporation | Variable volume between flexible structure and support surface |
| ATE403708T1 (de) * | 2004-12-29 | 2008-08-15 | 3M Innovative Properties Co | Multiphoton-polymerisierbare vorkeramische polymerzusammensetzungen |
| US7297374B1 (en) * | 2004-12-29 | 2007-11-20 | 3M Innovative Properties Company | Single- and multi-photon polymerizable pre-ceramic polymeric compositions |
| WO2006077995A1 (en) * | 2005-01-18 | 2006-07-27 | Fujifilm Corporation | Transparent film and method for manufacturing the same, polarized plate and image display device |
| EP1720072B1 (en) * | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US7583444B1 (en) * | 2005-12-21 | 2009-09-01 | 3M Innovative Properties Company | Process for making microlens arrays and masterforms |
| CN101448632B (zh) * | 2006-05-18 | 2012-12-12 | 3M创新有限公司 | 用于制备具有提取结构的光导的方法以及由此方法生产的光导 |
| US7491287B2 (en) * | 2006-06-09 | 2009-02-17 | 3M Innovative Properties Company | Bonding method with flowable adhesive composition |
| JP5105808B2 (ja) * | 2006-09-19 | 2012-12-26 | 保土谷化学工業株式会社 | ジスチリルベンゼン誘導体及びこれを用いた三次元メモリ材料、光制限材料、光造形用光硬化樹脂の硬化材料、並びに二光子蛍光顕微鏡用蛍光色素材料。 |
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| IN2009CN03580A (enExample) * | 2006-12-21 | 2015-09-11 | Agfa Graphics Nv | |
| US8376013B2 (en) | 2008-03-11 | 2013-02-19 | Duke University | Plasmonic assisted systems and methods for interior energy-activation from an exterior source |
| US20080296711A1 (en) * | 2007-05-30 | 2008-12-04 | Freescale Semiconductor, Inc. | Magnetoelectronic device having enhanced permeability dielectric and method of manufacture |
| JP5037243B2 (ja) * | 2007-07-06 | 2012-09-26 | 富士フイルム株式会社 | 界面結合剤、該界面結合剤を含有するレジスト組成物、及び該界面結合剤からなる層を有する磁気記録媒体形成用積層体、並びに該界面結合剤を用いた磁気記録媒体の製造方法、及び該製造方法により製造された磁気記録媒体 |
| US7851138B2 (en) * | 2007-07-19 | 2010-12-14 | Hitachi Global Storage Technologies, Netherlands, B.V. | Patterning a surface comprising silicon and carbon |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20090035528A1 (en) | 2009-02-05 |
| CA2499868A1 (en) | 2004-04-15 |
| JP4723248B2 (ja) | 2011-07-13 |
| JP2006501521A (ja) | 2006-01-12 |
| US7790347B2 (en) | 2010-09-07 |
| US20070264501A1 (en) | 2007-11-15 |
| US20040068023A1 (en) | 2004-04-08 |
| WO2004031862A1 (en) | 2004-04-15 |
| BR0314958A (pt) | 2005-08-02 |
| US7265161B2 (en) | 2007-09-04 |
| KR20050071538A (ko) | 2005-07-07 |
| AU2003279024A1 (en) | 2004-04-23 |
| CN1688937A (zh) | 2005-10-26 |
| EP1546805A1 (en) | 2005-06-29 |
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