CN100576467C - 利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 - Google Patents
利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 Download PDFInfo
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- CN100576467C CN100576467C CN200710139296A CN200710139296A CN100576467C CN 100576467 C CN100576467 C CN 100576467C CN 200710139296 A CN200710139296 A CN 200710139296A CN 200710139296 A CN200710139296 A CN 200710139296A CN 100576467 C CN100576467 C CN 100576467C
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- indium
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 37
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000012792 core layer Substances 0.000 claims abstract description 13
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 abstract 2
- 229940044658 gallium nitrate Drugs 0.000 abstract 1
- 229910017083 AlN Inorganic materials 0.000 description 19
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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CN200710139296A CN100576467C (zh) | 2007-08-28 | 2007-08-28 | 利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 |
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CN200710139296A CN100576467C (zh) | 2007-08-28 | 2007-08-28 | 利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 |
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CN101114594A CN101114594A (zh) | 2008-01-30 |
CN100576467C true CN100576467C (zh) | 2009-12-30 |
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101345192B (zh) * | 2008-07-07 | 2011-06-29 | 中国电子科技集团公司第十三研究所 | InAlN缓冲层生长AlN的方法 |
US9834860B2 (en) * | 2009-10-14 | 2017-12-05 | Alta Devices, Inc. | Method of high growth rate deposition for group III/V materials |
US8242510B2 (en) * | 2010-01-28 | 2012-08-14 | Intersil Americas Inc. | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
CN101901756B (zh) * | 2010-06-24 | 2012-06-27 | 西安电子科技大学 | 基于c面Al2O3衬底上极性c面GaN薄膜的MOCVD生长方法 |
CN102468166B (zh) * | 2010-10-29 | 2015-01-28 | 中国科学院微电子研究所 | 晶体管及其制造方法 |
CN102569390A (zh) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | 高击穿氮化镓基场效应晶体管器件及其制作方法 |
CN102205951B (zh) * | 2011-04-13 | 2013-03-06 | 新疆大学 | 一种制备氮化铝和氮化镓纳米棒异质结的方法 |
CN102290439B (zh) * | 2011-08-29 | 2013-02-20 | 中国电子科技集团公司第十三研究所 | 一种有刻蚀终止层的InAlN/GaN HEMT器件 |
CN103681830B (zh) * | 2012-09-11 | 2019-01-29 | 中国科学院微电子研究所 | 双沟道晶体管及其制备方法 |
CN105140110B (zh) * | 2015-07-07 | 2017-10-24 | 中国电子科技集团公司第五十五研究所 | 一种高可靠AlGaN/GaN异质结构设计方法 |
CN105006427B (zh) * | 2015-08-04 | 2018-01-30 | 中国电子科技集团公司第十三研究所 | 一种利用低温过渡层生长高质量氮化镓外延结构的方法 |
CN106206297A (zh) * | 2016-09-05 | 2016-12-07 | 中山大学 | 一种选区外延高质量的AlGaN/GaN生长方法 |
CN108417627B (zh) * | 2018-02-11 | 2024-06-18 | 江西省纳米技术研究院 | 一种用于制备GaN基高频微波器件的方法 |
CN112233972B (zh) * | 2020-12-17 | 2021-03-02 | 中电化合物半导体有限公司 | 一种氮化镓基外延结构及其制备方法 |
CN113628953A (zh) * | 2021-06-17 | 2021-11-09 | 中国电子科技集团公司第十三研究所 | 氮化物材料的制备方法及氮化物半导体器件 |
CN113628955A (zh) * | 2021-06-18 | 2021-11-09 | 中国电子科技集团公司第十三研究所 | 用于氮化物外延材料的衬底预处理方法及外延材料 |
CN114242851A (zh) * | 2021-12-09 | 2022-03-25 | 广东省科学院半导体研究所 | 一种半导体器件及其制作方法 |
CN117423787B (zh) * | 2023-12-18 | 2024-02-23 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
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Assignee: TONGHUI ELECTRONICS Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2010130000062 Denomination of invention: Method for improving gallium nitride based transistor material and device performance using indium doping Granted publication date: 20091230 License type: Exclusive License Open date: 20080130 Record date: 20100825 |
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