CN100557957C - 用于分布式功率放大器的混合结构 - Google Patents

用于分布式功率放大器的混合结构 Download PDF

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Publication number
CN100557957C
CN100557957C CNB038185873A CN03818587A CN100557957C CN 100557957 C CN100557957 C CN 100557957C CN B038185873 A CNB038185873 A CN B038185873A CN 03818587 A CN03818587 A CN 03818587A CN 100557957 C CN100557957 C CN 100557957C
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CN
China
Prior art keywords
power amplifier
drain
distributed power
transistors
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038185873A
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English (en)
Chinese (zh)
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CN1675831A (zh
Inventor
赵雷
安托尼·M·帕维奥
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1675831A publication Critical patent/CN1675831A/zh
Application granted granted Critical
Publication of CN100557957C publication Critical patent/CN100557957C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
CNB038185873A 2002-08-02 2003-07-18 用于分布式功率放大器的混合结构 Expired - Fee Related CN100557957C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/211,825 2002-08-02
US10/211,825 US6614307B1 (en) 2002-08-02 2002-08-02 Hybrid structure for distributed power amplifiers

Publications (2)

Publication Number Publication Date
CN1675831A CN1675831A (zh) 2005-09-28
CN100557957C true CN100557957C (zh) 2009-11-04

Family

ID=27765839

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038185873A Expired - Fee Related CN100557957C (zh) 2002-08-02 2003-07-18 用于分布式功率放大器的混合结构

Country Status (6)

Country Link
US (1) US6614307B1 (OSRAM)
JP (1) JP4313759B2 (OSRAM)
KR (1) KR101031986B1 (OSRAM)
CN (1) CN100557957C (OSRAM)
AU (1) AU2003265286A1 (OSRAM)
WO (1) WO2004013960A1 (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7885409B2 (en) 2002-08-28 2011-02-08 Rockwell Collins, Inc. Software radio system and method
US7233207B2 (en) 2005-05-06 2007-06-19 Motorola, Inc. System and method for providing an input to a distributed power amplifying system
KR100806298B1 (ko) * 2006-04-12 2008-02-22 한국과학기술원 전송선 변압기를 이용한 전력 증폭기
KR100757371B1 (ko) * 2006-07-07 2007-09-11 삼성전자주식회사 고주파 신호의 엔벨롭 변조를 위한 전력 증폭기 회로 및방법
US7720506B1 (en) 2006-07-28 2010-05-18 Rockwell Collins, Inc. System and method of providing antenna specific front ends for aviation software defined radios
US7831255B1 (en) 2006-07-31 2010-11-09 Rockwell Collins, Inc. System and method of providing automated availability and integrity verification for aviation software defined radios
US7724484B2 (en) * 2006-12-29 2010-05-25 Cobham Defense Electronic Systems Corporation Ultra broadband 10-W CW integrated limiter
JP2009088770A (ja) * 2007-09-28 2009-04-23 Renesas Technology Corp Ｒｆ増幅装置
US7880558B2 (en) * 2008-08-29 2011-02-01 Motorola, Inc. Method and apparatus for adjusting load impedance of a distributed amplifier
KR102051846B1 (ko) 2012-07-31 2019-12-05 삼성디스플레이 주식회사 디스플레이 구동 회로 및 그것을 포함하는 표시 장치
CN103368601B (zh) * 2013-06-03 2015-09-23 深圳清华大学研究院 无线通信收发机前端
KR101661151B1 (ko) * 2015-09-10 2016-09-29 국방과학연구소 테이퍼링된 캐패시터를 갖는 비균일 분산 전력 증폭기
CN106533366A (zh) * 2016-11-16 2017-03-22 中国电子科技集团公司第四十研究所 一种新型高频宽带功率放大器
US9929707B1 (en) * 2016-12-20 2018-03-27 Nxp Usa, Inc. Distributed amplifiers with impedance compensation circuits
CN107528555B (zh) * 2017-08-09 2020-10-27 四川九洲电器集团有限责任公司 一种分布式放大器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446445A (en) * 1982-11-24 1984-05-01 Rockwell International Corporation Singly terminated push-pull distributed amplifier
CN1346538A (zh) * 2000-02-08 2002-04-24 三菱电机株式会社 多级放大器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495183A (en) * 1965-10-28 1970-02-10 Jfd Electronics Corp Distributional amplifier means
US4540954A (en) * 1982-11-24 1985-09-10 Rockwell International Corporation Singly terminated distributed amplifier
US5117207A (en) * 1990-07-30 1992-05-26 Lockheed Sanders, Inc. Monolithic microwave airbridge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446445A (en) * 1982-11-24 1984-05-01 Rockwell International Corporation Singly terminated push-pull distributed amplifier
CN1346538A (zh) * 2000-02-08 2002-04-24 三菱电机株式会社 多级放大器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
2-22 Ghz Low Noise Distributed Amplifier Design. Biran,Y.Electrical and Electronics Engineers in Israel,1989.The Sixteenth Conference of. 1989 *
A 0.5-12 GHz hybrid matrix distributed amplifierusingcommercially available FETs. D'AGOSTINO S.ET AL.MICROWAVE SYMPOSIUM DIGEST,1991.,IEEE MTT-S INTERNATIONAL,Vol.1. 1991 *

Also Published As

Publication number Publication date
JP4313759B2 (ja) 2009-08-12
JP2005535227A (ja) 2005-11-17
KR20050035254A (ko) 2005-04-15
CN1675831A (zh) 2005-09-28
US6614307B1 (en) 2003-09-02
WO2004013960A1 (en) 2004-02-12
AU2003265286A1 (en) 2004-02-23
KR101031986B1 (ko) 2011-05-02

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GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091104

Termination date: 20210718

CF01 Termination of patent right due to non-payment of annual fee