KR101031986B1 - 분산된 전력 증폭기들을 위한 하이브리드 구조 - Google Patents

분산된 전력 증폭기들을 위한 하이브리드 구조 Download PDF

Info

Publication number
KR101031986B1
KR101031986B1 KR1020057001928A KR20057001928A KR101031986B1 KR 101031986 B1 KR101031986 B1 KR 101031986B1 KR 1020057001928 A KR1020057001928 A KR 1020057001928A KR 20057001928 A KR20057001928 A KR 20057001928A KR 101031986 B1 KR101031986 B1 KR 101031986B1
Authority
KR
South Korea
Prior art keywords
inductors
drain line
drain
power amplifier
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020057001928A
Other languages
English (en)
Korean (ko)
Other versions
KR20050035254A (ko
Inventor
레이 즈하오
안소니 엠. 파비오
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20050035254A publication Critical patent/KR20050035254A/ko
Application granted granted Critical
Publication of KR101031986B1 publication Critical patent/KR101031986B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
KR1020057001928A 2002-08-02 2003-07-18 분산된 전력 증폭기들을 위한 하이브리드 구조 Expired - Lifetime KR101031986B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/211,825 2002-08-02
US10/211,825 US6614307B1 (en) 2002-08-02 2002-08-02 Hybrid structure for distributed power amplifiers

Publications (2)

Publication Number Publication Date
KR20050035254A KR20050035254A (ko) 2005-04-15
KR101031986B1 true KR101031986B1 (ko) 2011-05-02

Family

ID=27765839

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057001928A Expired - Lifetime KR101031986B1 (ko) 2002-08-02 2003-07-18 분산된 전력 증폭기들을 위한 하이브리드 구조

Country Status (6)

Country Link
US (1) US6614307B1 (OSRAM)
JP (1) JP4313759B2 (OSRAM)
KR (1) KR101031986B1 (OSRAM)
CN (1) CN100557957C (OSRAM)
AU (1) AU2003265286A1 (OSRAM)
WO (1) WO2004013960A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101661151B1 (ko) * 2015-09-10 2016-09-29 국방과학연구소 테이퍼링된 캐패시터를 갖는 비균일 분산 전력 증폭기

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7885409B2 (en) 2002-08-28 2011-02-08 Rockwell Collins, Inc. Software radio system and method
US7233207B2 (en) 2005-05-06 2007-06-19 Motorola, Inc. System and method for providing an input to a distributed power amplifying system
KR100806298B1 (ko) * 2006-04-12 2008-02-22 한국과학기술원 전송선 변압기를 이용한 전력 증폭기
KR100757371B1 (ko) * 2006-07-07 2007-09-11 삼성전자주식회사 고주파 신호의 엔벨롭 변조를 위한 전력 증폭기 회로 및방법
US7720506B1 (en) 2006-07-28 2010-05-18 Rockwell Collins, Inc. System and method of providing antenna specific front ends for aviation software defined radios
US7831255B1 (en) 2006-07-31 2010-11-09 Rockwell Collins, Inc. System and method of providing automated availability and integrity verification for aviation software defined radios
US7724484B2 (en) * 2006-12-29 2010-05-25 Cobham Defense Electronic Systems Corporation Ultra broadband 10-W CW integrated limiter
JP2009088770A (ja) * 2007-09-28 2009-04-23 Renesas Technology Corp Ｒｆ増幅装置
US7880558B2 (en) * 2008-08-29 2011-02-01 Motorola, Inc. Method and apparatus for adjusting load impedance of a distributed amplifier
KR102051846B1 (ko) 2012-07-31 2019-12-05 삼성디스플레이 주식회사 디스플레이 구동 회로 및 그것을 포함하는 표시 장치
CN103368601B (zh) * 2013-06-03 2015-09-23 深圳清华大学研究院 无线通信收发机前端
CN106533366A (zh) * 2016-11-16 2017-03-22 中国电子科技集团公司第四十研究所 一种新型高频宽带功率放大器
US9929707B1 (en) * 2016-12-20 2018-03-27 Nxp Usa, Inc. Distributed amplifiers with impedance compensation circuits
CN107528555B (zh) * 2017-08-09 2020-10-27 四川九洲电器集团有限责任公司 一种分布式放大器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495183A (en) * 1965-10-28 1970-02-10 Jfd Electronics Corp Distributional amplifier means
US4540954A (en) * 1982-11-24 1985-09-10 Rockwell International Corporation Singly terminated distributed amplifier
US4446445A (en) * 1982-11-24 1984-05-01 Rockwell International Corporation Singly terminated push-pull distributed amplifier
US5117207A (en) * 1990-07-30 1992-05-26 Lockheed Sanders, Inc. Monolithic microwave airbridge
US6812794B1 (en) * 2000-02-08 2004-11-02 Mitsubishi Denki Kabushiki Kaisha Multistage amplifier

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
논문 : IEEE, BROUZES H ET AL : A 1 to 40GHz MESFET hybrid distributed amplifier
논문 : IEEE, D'AGOSTINOS ET AL : A 0.5-12GHz hybrid matrix distributed amplifier
보고서 : 정보통신산업기술개발사업 Wireless Multi Access Point 개발, 정보통신부,2002.05.31.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101661151B1 (ko) * 2015-09-10 2016-09-29 국방과학연구소 테이퍼링된 캐패시터를 갖는 비균일 분산 전력 증폭기

Also Published As

Publication number Publication date
JP4313759B2 (ja) 2009-08-12
CN100557957C (zh) 2009-11-04
JP2005535227A (ja) 2005-11-17
KR20050035254A (ko) 2005-04-15
CN1675831A (zh) 2005-09-28
US6614307B1 (en) 2003-09-02
WO2004013960A1 (en) 2004-02-12
AU2003265286A1 (en) 2004-02-23

Similar Documents

Publication Publication Date Title
Yao et al. 60-ghz pa and lna in 90-nm rf-cmos
US6850117B2 (en) CMOS transceiver having an integrated power amplifier
US9685915B2 (en) Amplification stage and wideband power amplifier
CN112910418B (zh) 一种超宽带芯片偏置电路结构
Jeong et al. A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs
US6614307B1 (en) Hybrid structure for distributed power amplifiers
CN1675826A (zh) 大功率多赫蒂放大器
EP3694102B1 (en) Amplifiers and amplifier modules having stub circuits
CN111934663A (zh) 用于射频应用的转移印刷
CN112928995A (zh) 具有表面安装封装的载波和峰化放大器的多赫蒂放大器
Milićević et al. Power and conjugately matched high band UWB power amplifier
Fallesen et al. A 1 W 0.35/spl mu/m CMOS power amplifier for GSM-1800 with 45% PAE
Babenko et al. 0.01–22-GHz feedback-stabilized single-supply GaAs cascode distributed amplifiers
Khannur A CMOS power amplifier with power control and T/R switch for 2.45-GHz Bluetooth/ISM band applications
Wu et al. A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP power amplifier
Lee et al. A K-Band High-Voltage Four-Way Series-Bias Cascode Power Amplifier in 0.13$\mu $ m CMOS
Zhang et al. Design of a CMOS distributed power amplifier with gradual changed gain cells
Abey et al. A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT
Bahl Low loss matching (LLM) design technique for power amplifiers
Tu et al. 5.25 GHz CMOS cascode power amplifier for 802.11 a wireless local area network
Conlon et al. GaN wide band power integrated circuits
Hella et al. A digitally controlled CMOS RF power amplifier
US12155356B2 (en) Monolithic microwave integrated circuit device with internal decoupling capacitor
Kitlinski et al. Si-Ge power amplifier for WCDMA handheld applications
Qi et al. A 1.5 V Low Power CMOS LNA Design

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20050202

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20080718

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100223

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100816

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20110221

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20110422

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20110425

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20140408

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20140408

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20160411

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20160411

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20190401

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20190401

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20200401

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20210329

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20220324

Start annual number: 12

End annual number: 12

PC1801 Expiration of term

Termination date: 20240118

Termination category: Expiration of duration