CN100526997C - 曝光装置的检查方法 - Google Patents

曝光装置的检查方法 Download PDF

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Publication number
CN100526997C
CN100526997C CNB2007100964172A CN200710096417A CN100526997C CN 100526997 C CN100526997 C CN 100526997C CN B2007100964172 A CNB2007100964172 A CN B2007100964172A CN 200710096417 A CN200710096417 A CN 200710096417A CN 100526997 C CN100526997 C CN 100526997C
Authority
CN
China
Prior art keywords
optical system
exposure
photosensitive substrate
pattern
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2007100964172A
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English (en)
Chinese (zh)
Other versions
CN101063827A (zh
Inventor
福原和也
井上壮一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN101063827A publication Critical patent/CN101063827A/zh
Application granted granted Critical
Publication of CN100526997C publication Critical patent/CN100526997C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2007100964172A 2002-08-30 2003-08-28 曝光装置的检查方法 Expired - Fee Related CN100526997C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP255210/2002 2002-08-30
JP2002255210A JP4005881B2 (ja) 2002-08-30 2002-08-30 露光装置の検査方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB031560024A Division CN100414438C (zh) 2002-08-30 2003-08-28 曝光装置

Publications (2)

Publication Number Publication Date
CN101063827A CN101063827A (zh) 2007-10-31
CN100526997C true CN100526997C (zh) 2009-08-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2007100964172A Expired - Fee Related CN100526997C (zh) 2002-08-30 2003-08-28 曝光装置的检查方法
CNB031560024A Expired - Fee Related CN100414438C (zh) 2002-08-30 2003-08-28 曝光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB031560024A Expired - Fee Related CN100414438C (zh) 2002-08-30 2003-08-28 曝光装置

Country Status (5)

Country Link
US (2) US7286216B2 (https=)
JP (1) JP4005881B2 (https=)
CN (2) CN100526997C (https=)
NL (1) NL1024195C2 (https=)
TW (1) TW200407966A (https=)

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JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
JP2007534166A (ja) * 2004-04-14 2007-11-22 ライテル・インストルメンツ 射出瞳透過率を計測する方法および装置
JP2005337957A (ja) * 2004-05-28 2005-12-08 Dainippon Screen Mfg Co Ltd 基板検査装置
WO2006090807A1 (ja) * 2005-02-25 2006-08-31 Nikon Corporation 露光方法および装置、ならびに電子デバイス製造方法
JP2006303196A (ja) 2005-04-20 2006-11-02 Canon Inc 測定装置及びそれを有する露光装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
JP5446648B2 (ja) * 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
KR20100042924A (ko) * 2008-10-17 2010-04-27 삼성전자주식회사 포토 마스크의 헤이즈 모니터링 시스템 및 모니터링 방법
KR101511158B1 (ko) * 2008-12-16 2015-04-13 삼성전자주식회사 레티클 에러 검출 방법
JP6345125B2 (ja) * 2012-03-07 2018-06-20 ケーエルエー−テンカー コーポレイション ウェハおよびレチクル検査システムならびに照明瞳配置を選択するための方法
TWI489200B (zh) * 2012-05-29 2015-06-21 Sino American Silicon Prod Inc 半圓對接式光罩圖案的設計方法
CN111443576B (zh) * 2015-04-07 2023-04-07 联华电子股份有限公司 照明系统以及使用其形成鳍状结构的方法
JP7596106B2 (ja) 2020-09-28 2024-12-09 キヤノン株式会社 情報処理装置、検査方法、プログラム、露光装置、決定方法、及び物品の製造方法
EP4095573A1 (en) * 2021-05-27 2022-11-30 ASML Netherlands B.V. Diffraction grating for measurements in euv-exposure apparatuses

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DE3635689A1 (de) * 1986-10-21 1988-05-05 Messerschmitt Boelkow Blohm Verfahren zur vermessung der optischen achse eines leitstrahlprojektors und einrichtung zur durchfuehrung des verfahrens
JP2928277B2 (ja) 1989-08-03 1999-08-03 株式会社日立製作所 投影露光方法及びその装置
JPH03221848A (ja) * 1990-01-26 1991-09-30 Canon Inc 異物検査装置
JP3048168B2 (ja) * 1990-07-19 2000-06-05 キヤノン株式会社 表面状態検査装置及びこれを備える露光装置
JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
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JP3302926B2 (ja) * 1998-07-02 2002-07-15 株式会社東芝 露光装置の検査方法
JP3513031B2 (ja) * 1998-10-09 2004-03-31 株式会社東芝 アライメント装置の調整方法、収差測定方法及び収差測定マーク
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JP2001330964A (ja) 2000-05-22 2001-11-30 Nikon Corp 露光装置および該露光装置を用いたマイクロデバイス製造方法
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
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Also Published As

Publication number Publication date
US20070236691A1 (en) 2007-10-11
US20040119973A1 (en) 2004-06-24
NL1024195C2 (nl) 2007-10-03
CN101063827A (zh) 2007-10-31
CN100414438C (zh) 2008-08-27
JP2004095871A (ja) 2004-03-25
CN1488999A (zh) 2004-04-14
JP4005881B2 (ja) 2007-11-14
TWI300954B (https=) 2008-09-11
NL1024195A1 (nl) 2004-03-02
TW200407966A (en) 2004-05-16
US7286216B2 (en) 2007-10-23
US7327449B2 (en) 2008-02-05

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Granted publication date: 20090812

Termination date: 20130828