CN100508133C - 旋转蚀刻的工序管理方法及旋转蚀刻装置 - Google Patents

旋转蚀刻的工序管理方法及旋转蚀刻装置 Download PDF

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Publication number
CN100508133C
CN100508133C CNB2004800414707A CN200480041470A CN100508133C CN 100508133 C CN100508133 C CN 100508133C CN B2004800414707 A CNB2004800414707 A CN B2004800414707A CN 200480041470 A CN200480041470 A CN 200480041470A CN 100508133 C CN100508133 C CN 100508133C
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etching
etch
rate
weight
wafer
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CN1914713A (zh
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土屋正人
小笠原俊一
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Mimasu Semiconductor Industry Co Ltd
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Mimasu Semiconductor Industry Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB2004800414707A 2004-03-22 2004-03-22 旋转蚀刻的工序管理方法及旋转蚀刻装置 Expired - Lifetime CN100508133C (zh)

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PCT/JP2004/003817 WO2005091346A1 (ja) 2004-03-22 2004-03-22 スピンエッチングにおける工程管理方法及びスピンエッチング装置

Publications (2)

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CN1914713A CN1914713A (zh) 2007-02-14
CN100508133C true CN100508133C (zh) 2009-07-01

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CNB2004800414707A Expired - Lifetime CN100508133C (zh) 2004-03-22 2004-03-22 旋转蚀刻的工序管理方法及旋转蚀刻装置

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US (2) US7659212B2 (https=)
EP (1) EP1729332B1 (https=)
JP (1) JP4364242B2 (https=)
KR (1) KR101010532B1 (https=)
CN (1) CN100508133C (https=)
TW (1) TW200539267A (https=)
WO (1) WO2005091346A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177329A (ja) * 2007-01-18 2008-07-31 Mitsubishi Electric Corp ウエットエッチング方法
JP4978548B2 (ja) * 2008-04-25 2012-07-18 三菱化学株式会社 エッチング方法及び半導体デバイス用基板の製造方法
CN101651098B (zh) * 2009-06-12 2012-10-17 上海宏力半导体制造有限公司 一种刻蚀方法
CN102569019B (zh) * 2010-12-17 2014-06-04 无锡华润上华半导体有限公司 浅槽隔离形成方法
TWI441272B (zh) * 2011-09-26 2014-06-11 Lextar Electronics Croportion 監測蝕刻製程的方法
JP6163434B2 (ja) 2014-01-16 2017-07-12 株式会社東芝 薬液処理装置及び薬液処理方法
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
CN104332430B (zh) * 2014-09-04 2017-02-15 常州捷佳创精密机械有限公司 一种硅片在线称重控制系统及其控制方法
EP3432351B1 (en) 2016-04-21 2021-07-14 Mimasu Semiconductor Industry Co., Ltd. Contactless electric power supply mechanism and method for rotary table, and wafer rotating and holding device
US10818538B2 (en) 2016-05-24 2020-10-27 Mimasu Semiconductor Industry Co., Ltd. Wafer holding mechanism for rotary table and method and wafer rotating and holding device
JP6837481B2 (ja) 2016-05-26 2021-03-03 三益半導体工業株式会社 回転テーブル用ウェーハ加熱保持機構及び方法並びにウェーハ回転保持装置
CN106298573A (zh) * 2016-09-13 2017-01-04 冠礼控制科技（上海）有限公司 通过硅片自旋转及振荡机构改善蚀刻率的测试方法
US11075218B2 (en) 2019-05-22 2021-07-27 Sandisk Technologies Llc Method of making a three-dimensional memory device using silicon nitride etching end point detection
CN113496886B (zh) * 2020-04-03 2022-10-25 重庆超硅半导体有限公司 一种集成电路用单晶硅片碱腐蚀去除量的控制方法
JP7153361B2 (ja) * 2020-04-18 2022-10-14 有限会社Nas技研 バルクエッチング方法とバルクエッチング装置
CN111339693B (zh) * 2020-05-19 2020-10-13 深圳市乾行达科技有限公司 一种工件的蚀刻方法、装置及终端设备
CN115312412A (zh) * 2022-07-07 2022-11-08 中国电子科技集团公司第十一研究所 锑化铟晶片正面减薄厚度的测量方法及测量系统
CN117430337B (zh) * 2022-07-13 2025-11-18 航天科工惯性技术有限公司 一种摆片的蚀刻方法及蚀刻控制系统
CN115938929B (zh) * 2022-12-14 2023-11-03 湖北江城芯片中试服务有限公司 蚀刻机台及其控制方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1328696A (zh) * 1998-11-24 2001-12-26 大金工业株式会社 蚀刻溶液,蚀刻制品和制造蚀刻制品的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287124A (ja) * 1985-06-13 1986-12-17 Oki Electric Ind Co Ltd 基板の薬液加工方法および薬液加工装置
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
JPH01236633A (ja) * 1988-03-16 1989-09-21 Rohm Co Ltd エッチング終点検出法
JPH01309332A (ja) * 1988-06-08 1989-12-13 Toyo Electric Mfg Co Ltd エッチングの自動制御装置
KR0166831B1 (ko) * 1995-12-18 1999-02-01 문정환 반도체 웨이퍼 세정장치 및 방법
KR100192489B1 (ko) * 1995-12-26 1999-06-15 구본준 용기를 갖는 습식에치 장치의 에치 종말점 측정방법
US6221171B1 (en) * 1996-06-04 2001-04-24 Ebara Corporation Method and apparatus for conveying a workpiece
DE19641070A1 (de) * 1996-10-04 1998-04-09 Wacker Siltronic Halbleitermat Verfahren zur Charakterisierung von Defekten
JP4486217B2 (ja) * 2000-05-01 2010-06-23 浜松ホトニクス株式会社 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法
JP4590700B2 (ja) * 2000-07-14 2010-12-01 ソニー株式会社 基板洗浄方法及び基板洗浄装置
TW511180B (en) * 2000-07-31 2002-11-21 Mitsubishi Chem Corp Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device
US20020142619A1 (en) * 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
JP2003077838A (ja) * 2001-08-30 2003-03-14 Toshiba Corp 半導体製造装置のドライクリーニング時期判定システム、半導体製造装置のドライクリーニング方法、半導体製造装置のドライクリーニングシステム及び半導体装置の製造方法
JP2003215002A (ja) * 2002-01-17 2003-07-30 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US6902647B2 (en) * 2002-08-29 2005-06-07 Asm International N.V. Method of processing substrates with integrated weighing steps

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1328696A (zh) * 1998-11-24 2001-12-26 大金工业株式会社 蚀刻溶液,蚀刻制品和制造蚀刻制品的方法

Also Published As

Publication number Publication date
KR20060126990A (ko) 2006-12-11
EP1729332A1 (en) 2006-12-06
TW200539267A (en) 2005-12-01
EP1729332B1 (en) 2016-10-12
TWI347631B (https=) 2011-08-21
US20080242101A1 (en) 2008-10-02
JP4364242B2 (ja) 2009-11-11
US20100101726A1 (en) 2010-04-29
WO2005091346A1 (ja) 2005-09-29
US7659212B2 (en) 2010-02-09
EP1729332A4 (en) 2010-09-15
CN1914713A (zh) 2007-02-14
KR101010532B1 (ko) 2011-01-24
JPWO2005091346A1 (ja) 2008-02-07

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