CN100506487C - Solidified abrasive lapping polishing pad having self-modifying function and preparation method - Google Patents
Solidified abrasive lapping polishing pad having self-modifying function and preparation method Download PDFInfo
- Publication number
- CN100506487C CN100506487C CNB2007100248219A CN200710024821A CN100506487C CN 100506487 C CN100506487 C CN 100506487C CN B2007100248219 A CNB2007100248219 A CN B2007100248219A CN 200710024821 A CN200710024821 A CN 200710024821A CN 100506487 C CN100506487 C CN 100506487C
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- polishing
- abrasive
- solidified
- abrasive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 121
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000000227 grinding Methods 0.000 claims abstract description 57
- 239000011159 matrix material Substances 0.000 claims abstract description 32
- 229920000642 polymer Polymers 0.000 claims abstract description 21
- 239000003085 diluting agent Substances 0.000 claims abstract description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920000058 polyacrylate Polymers 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 239000003082 abrasive agent Substances 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 150000003254 radicals Chemical class 0.000 claims description 15
- 230000033228 biological regulation Effects 0.000 claims description 13
- 230000004048 modification Effects 0.000 claims description 13
- 238000012986 modification Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 230000032050 esterification Effects 0.000 claims description 8
- 238000005886 esterification reaction Methods 0.000 claims description 8
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- 230000009466 transformation Effects 0.000 claims description 3
- 230000010148 water-pollination Effects 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000003754 machining Methods 0.000 abstract description 6
- 229920001730 Moisture cure polyurethane Polymers 0.000 abstract 1
- 238000007596 consolidation process Methods 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
- 239000012949 free radical photoinitiator Substances 0.000 abstract 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 238000005303 weighing Methods 0.000 description 27
- 230000003746 surface roughness Effects 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000012530 fluid Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000003607 modifier Substances 0.000 description 10
- 239000002202 Polyethylene glycol Substances 0.000 description 9
- 229920001223 polyethylene glycol Polymers 0.000 description 9
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 8
- 238000003756 stirring Methods 0.000 description 7
- 239000004721 Polyphenylene oxide Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920000570 polyether Polymers 0.000 description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 5
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- -1 phenyl phosphorous Chemical compound 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002113 nanodiamond Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 239000012965 benzophenone Substances 0.000 description 3
- 229940106691 bisphenol a Drugs 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- SOIAEOTUSNFHMI-UHFFFAOYSA-N 2-(2-aminoethylamino)ethane-1,1-diol Chemical compound NCCNCC(O)O SOIAEOTUSNFHMI-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 238000000713 high-energy ball milling Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000555 poly(dimethylsilanediyl) polymer Polymers 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-Me3C6H3 Natural products CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- HAHPGQIYPXCFBI-UHFFFAOYSA-N CC(=O)C.N1CCOCC1 Chemical compound CC(=O)C.N1CCOCC1 HAHPGQIYPXCFBI-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000675108 Citrus tangerina Species 0.000 description 1
- 239000004258 Ethoxyquin Substances 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- DECIPOUIJURFOJ-UHFFFAOYSA-N ethoxyquin Chemical compound N1C(C)(C)C=C(C)C2=CC(OCC)=CC=C21 DECIPOUIJURFOJ-UHFFFAOYSA-N 0.000 description 1
- 229940093500 ethoxyquin Drugs 0.000 description 1
- 235000019285 ethoxyquin Nutrition 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229920001427 mPEG Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XOALFFJGWSCQEO-UHFFFAOYSA-N tridecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C=C XOALFFJGWSCQEO-UHFFFAOYSA-N 0.000 description 1
- 229940113165 trimethylolpropane Drugs 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a grinding and polishing pad of consolidation abrasive with self-adjusting function and the preparation method, belonging to ultra-precision grinding and polishing machining technical field, which is characterized in that components of the abrasive layer (3)comprises 1-20% by wt of abrasive with granularity of 1-40 nanometer, 20-80% by wt of acrylic pre-polymer, 1-3% by wt of free radical photo initiator, 0-2% by wt of poly (dimethylsiloxane)/acrylic polymer, 0-20% by wt of adjustment additive with system cross-linking density performance, and 5-40% by wt of acrylic active diluent. The preparation process comprises (1)mixing stock fully and uniformly, (2)preparing rigid polymer matrix, (3)daubing uniformly by screen-printing, and (4)solidifying by ultraviolet cured machine. The invention is provided with stable grinding and polishing performance and self-adjustment performance. It is suitable for precision machining.
Description
Technical field:
Solidified abrasive grinding polishing pad and the preparation method who has from debugging functions of the present invention relates to ultraprecision grinding and polishing processing technique field.
Background technology:
Because the demand of popularization, digital household appliances and the network market of standards such as TD-SCDMA promotes, the semi-conductor market of China will reach 68,600,000,000 dollars scale in 2008.LED is efficient, be easy to drive, small and exquisite, frivolous, sturdy and durable, reason such as noise is low and cost is low, the colorful display screen and the ornament lamp illumination that become portable electric appts (mobile phone etc.) provide the ideal of illumination to select, thereby, to its backing material sapphire (Al
2O
3) demand surge.Rapid development of high and new such as internet and mobile communication, to laser crystal (as ruby, titanium jewel, YVO
4Crystal etc.), the demand of nonlinear optical crystal (as KDP, KTP, BBO, LBO), piezo-electric crystal (crystal, lithium niobate, lithium tantalate), computer hard disc substrate etc. constantly increases.Because improving constantly of hard-disc storage density and running speed, more and more higher requirement has been proposed for the machining accuracy and the surface quality of the magnetic head of its substrate.Above-mentioned material and element mostly adopt grinding and polishing as its only resource of processing eventually.Traditional grinding and polishing liquid is made of components such as abrasive particle, pH conditioning agent, oxidants.Yet there is the intrinsic shortcoming of some systems in traditional free abrasive grinding and polishing: when speed of grinding plate was fast, abrasive material produced and to splash, and caused the low of the waste of abrasive material and working (machining) efficiency; The treatment cost of waste liquor height; Abrasive material is random distribution on polishing disk, and its distribution density inequality causes the inequality of grinding cutting amount, workpiece surface figure accuracy to be difficult to control.The polishing of employing solidified abrasive grinding has higher working (machining) efficiency and workpiece surface quality, reduces the treating capacity of grinding and polishing waste liquid, has alleviated environmental pollution.In addition, for grinding and polishing pad, research is also less both at home and abroad.United States Patent (USP) 7217179 qualifying 7198544 disclose 2 kinds of chemical mechanical polishing pads, and the former contains water soluble particle in the polishing pad, and the latter has measurement window in polishing, but all not mentioned from debugging functions.People such as Korea S jae young choi are at a study on polishing of molds using hydrophilic fixed abracie pad (Iitl.J.Mach.Tool Manufac.2004, (44): 1143) proposed a kind of polishing pad that has from debugging functions in the article, wherein used abrasive material is the large scale abrasive material about 1000 orders, though grinding and polishing pad is difficult for stopping up, but the surface roughness of processing back workpiece is higher, contain the polymer that too much has neither part nor lot in the photocuring process in the polishing pad, contain and cause the photocuring process not thorough, influence the polishing pad matrix and support the ability of abrasive material.
Summary of the invention
The object of the present invention is to provide a kind of grinding and polishing stable performance, have, be applicable to precision machined solidified abrasive grinding polishing pad and the preparation method who has from debugging functions from debugging functions.
A kind of solidified abrasive grinding polishing pad that has from debugging functions is made up of abrasive material, rigid layer, it is characterized in that described abrasive material component and mass percent are as follows:
The abrasive material 1～20% of granularity in 1 nanometer～40 micron
The prepolymer 20～80% of polyacrylate
Free radical photo-initiation 1～3%
Dimethyl silicone polymer or acrylate copolymer 0～2%
System crosslink density property regulation additive 0～20%
The reactive diluent 5～40% of acroleic acid esterification
The abrasive material of granularity between 1 nanometer～40 micron is the important component that constitutes grinding and polishing pad, plays the effect of removing the surface of the work material in the grinding and polishing process.And the kind of the clearance of surface of the work material and abrasive material and granular relevant are selected the purpose of the abrasive material of granularity between 1 nanometer～40 micron among the present invention, control it exactly and remove speed in reasonable range.Abrasive material among the present invention is a diamond, a kind of in silica, ceria, alundum (Al, the carborundum etc. or two or more combination wherein.Wherein diamond can be the synthetic Nano diamond of negative oxygen detonation, the synthetic Nano diamond of blast, or static pressure method diamond synthesis, obtain after pulverizing shaping, its granularity is between 1 nanometer～40 micron, and the abrasive grain of other kind is all between 10 nanometers～40 micron.Above-mentioned abrasive material, as passing through the mechanochemistry surface modification in advance, the realization abrasive surface to oil loving transformation, makes abrasive material and polymeric system that better compatibility be arranged from hydrophily, and effect is better.Join in the above-mentioned matrix through surperficial post processing and to go, can improve compatibility and interface bond strength between abrasive particle and the matrix, thereby improve the performance of grinding and polishing pad.
The prepolymer of polyacrylate is the special prepolymer of a class, is the main body component of polishing pad among the present invention, and its performance plays a crucial role to the performance of polishing pad matrix and polishing pad.On the molecule of this type of prepolymer, contain acrylic acid groups, under action of ultraviolet light, radical initiator can cause its polymerizing curable, regulates the kind and the ratio of prepolymer, can realize the regulation and control to the grinding and polishing pad substrate performance.Polyacrylate prepolymer among the present invention is: the epoxy acrylic of bisphenol A epoxy acrylate, phenolic aldehyde epoxy acrylate and amine modification, utilize oleic acid, linoleic acid to carry out one or more combination in the fatty epoxy acrylate of chain modified length, urethane acrylate, polyester acrylate, polyether acrylate, the acroleic acid esterification polyacrylate.
Free radical photo-initiation is the special light trigger of a class, though the content in grinding and polishing pad is few, is one of its key component.Under suitable UV-irradiation, the molecule generation cracking of free radical photo-initiation generates the living radical fragment, the polymerizing curable of the prepolymer of the polyacrylate among initiation the present invention and the reactive diluent monomer of acroleic acid esterification.Free radical photo-initiation among the present invention, be benzoin and derivative thereof, α, alpha, alpha-dimethyl oxygen base-α phenyl acetophenone, dialkoxy acetophenone, benzophenone, Alpha-hydroxy alkyl phenones, 2-methyl isophthalic acid-2 morpholine acetone, 2-phenyl-2-dimethylamino-1-butanone-1, two (2,4,6-trimethylbenzene formyl) combination of one or more in the phenyl phosphorous oxide.
Poly dimethyl silane or acrylate copolymer are two kinds of flowables, itself have lower surface can, be used for regulation system the surface can, improve the flow behavior of system, eliminate the not good and defectives such as tangerine peel, brush mark and pin hole that cause of system flowability why.Dimethyl silicone polymer or acrylate copolymer are dimethyl silicone polymers among the present invention, based on the combination of a kind of in the homopolymers of acrylic acid and/or methacrylic acid or the copolymer or two kinds.
System crosslink density property regulation additive is the polymer that a class does not participate in the photocuring process, adds crosslink density, hardness and other performance of adjustable body system in right amount, adds too much, can cause solidification process not thorough.System crosslink density properties modifier is polymethacrylates, butyronitrile resin among the present invention, the combination of one or more in polyethylene glycol, polyvinyl alcohol, the polypropylene glycol.
The reactive diluent of polyacrylic acid esterification and aforesaid polyacrylate prepolymer are similar, can under the initiation of free radical photo-initiation, polymerizing curable take place under UV-irradiation.But compare with prepolymer, the reactive diluent of polyacrylic acid esterification has lower viscosity, can be used to the viscosity of regulation system, system can be mixed better, possesses suitable flowability, in addition, the quantity of functional group in the control reactive diluent molecule, but crosslink density and its combination property after also the hierarchy of control is solidified.The reactive diluent of acroleic acid esterification is acrylic acid one β-hydroxyl ethyl ester, hydroxyethyl methacrylate, the 2-phenoxyethyl acrylate, phenoxy group triethyl group acrylate, β-hydroxy ethyl methacrylate, lauryl acrylate, lauryl methacrylate, tridecyl acrylate, two contract/triethylene Glycol (methyl) acrylate, two (methyl) acrylate of ethoxyquin bisphenol-A, two (methyl) acrylate of polyethylene glycol, neopentyl glycol diethoxy/propoxyl group double methacrylate, trimethylolpropane tris (methyl) acrylate, ethoxylated trimethylolpropane three (methyl) acrylate, the combination of one or more in the methoxy poly (ethylene glycol) monomethacrylates.
The above-mentioned solidified abrasive grinding polishing pad that has from debugging functions can also be three-decker, i.e. abrasive material, rigid layer and three layers of composition of elastic layer.
A kind of preparation method who has from the solidified abrasive grinding polishing pad of debugging functions may further comprise the steps:
(1) according to the mass percent of each component, take by weighing the reactive diluent and the components such as free radical photo-initiation, property regulation additive, dimethyl silicone polymer or acrylate copolymer of abrasive material, polyacrylate prepolymer, propernoic acid esterization, and fully mix with mixer, obtain mixture;
(2) prepare one and handle clean rigid polymer matrix;
(3) thickness is suitable, above be distributed with the rule hole thin plate be fixed on rigid polymer matrix top, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably;
(4), said mixture is solidified by uv cure machine..
In some application scenarios, also need paste one deck elastic layer, be polishing pad of the presently claimed invention.Among the above-mentioned preparation technology, abrasive surface is as the process surface, and the realization abrasive surface to oil loving transformation, makes abrasive material and polymeric system that compatibility preferably be arranged from hydrophily, and effect is better.The means of mechanochemical modification are high-energy ball milling, stirring mill, high speed shear or high frequency ultrasound etc. normally.We know, overwhelming majority abrasive material is a surface hydrophilicity, with high polymer system be inconsistent, can cause skewness and the adhesion of abrasive material and matrix of abrasive material in matrix low, high-energy ball milling, stir in mill, high speed shear or the high frequency ultrasound process, abrasive material exposes unsalted surface, owing to contain a large amount of dangling bonds on the unsalted surface, add the localized hyperthermia in the modifying process, abrasive material and surface modifier can produce chemical reaction, thereby the surface characteristic that realizes abrasive material changes.
Adopt the abrasive material of granularity among the present invention at 1nm-10um, can effectively reduce the surface roughness after the workpiece grinding and polishing is processed, significantly reduce the system glue connection density adjuster that does not participate in curing reaction, suitably increase the reactive diluent content of acrylic acid esterification, both can improve the mechanical performance of polishing pad and, also can control the crosslink density of polishing pad system the tenability of abrasive material.Dimethyl silicone polymer in the prescription or acrylate copolymer levelling agent can be eliminated because of defectives such as the not good orange peel that causes of system flowability, pin holes.The ultraprecision grinding polishing that solidified abrasive grinding polishing pad of the present invention is used for semiconductor, LED, computer hard disc substrate and magnetic head thereof, optics and precision die adds man-hour, and the I of processed workpiece surface roughness reaches 0.2 nanometer even following.Grinding and polishing pad of the present invention is used for grinding and polishing and adds man-hour, compare with traditional grinding and polishing processing, have only in the protrusion of surface and just can play shear action with the contacted abrasive particle of workpiece, the low-lying place of surface of the work, be not removed because of not contacting with abrasive material, and the processing of traditional free abrasive grinding and polishing, can arrive any position of working surface because of abrasive material, therefore, the all surface of workpiece all has certain removal speed, so, adopt solidified abrasive grinding polishing pad of the present invention to carry out grinding and polishing and add man-hour, can reach better workpiece planarization degree and high working (machining) efficiency.Abrasive grain among the application is between 1 nanometer～40 micron, matrix is the polymer with water-soluble bloated characteristic, in the grinding and polishing process, water permeates to polymeric matrix, and the hydrophilic radical in the polymer causes the expansion of polymeric matrix and the decline of intermolecular adhesion by effect adsorbed water such as hydrogen bonds, when acquiring a certain degree, this part matrix comes off from pad interface together with the abrasive material in the matrix, the abrasive particle exposure of subsurface stratum, and the grinding and polishing process is stablized carries out.Therefore, solidified abrasive grinding polishing pad of the present invention possesses in the course of the work from debugging functions, and owing to reasons such as preparation difficulty, this work also is at the early-stage in the world, and domestic then rarely have the people to set foot in.
Description of drawings
Fig. 1 is the composition diagram of grinding and polishing pad.
Number in the figure title: 1. abrasive material, 2. rigid layer, 3. elastic layer.
Concrete case study on implementation
With average grain diameter is that the nano oxidized cerium abradant of 20 nanometers carries out surface modification with silane coupler, take by weighing the above-mentioned nano-cerium oxide of 2.5 grams through surface modification, take by weighing the prepolymer that 10 gram urethane acrylates and 35 gram polyether acrylates are formed, take by weighing properties modifier polyethylene glycol 15 grams as properties modifier, take by weighing free radical photo-initiation Alpha-hydroxy alkyl phenones 1 gram, take by weighing in advance with the polyethylene glycol double methyl methacrylate: trimethylolpropane triacrylate is reactive diluent mixture 36.5 grams of 1:1, earlier other material except that light trigger is mixed, add light trigger again, and stir once more, make it even, prepare a carbonate polymer matrix of handling 1 clean millimeters thick, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably; Speed with 2m/min is passed through uv cure machine, and said mixture is solidified, and obtains the solidified abrasive grinding polishing pad.
The solidified abrasive grinding polishing pad of poly-preparation is bonded on the elastic matrix with the above-mentioned step, silica dioxide medium layer on 3 inches silicon chips of polishing on the NANOPOL-100 polishing machine, before the polishing, the silicon chip average surface roughness is 2 nanometers, polish pressure is 16KPa, the polishing disk rotating speed is 100rpm, do not contain any abrasive material in the polishing fluid, adopting the pH value of ammoniacal liquor regulation system is 11, the flow-control of polishing fluid is at 10ml/min, and polishing time is 10min, after the polishing, on inspection, the average surface roughness of silicon chip is 0.23 nanometer.
Abrasive material ceria in the above-mentioned polishing pad is changed into the silica of 20 nanometers, other process and parameter constant, preparation solidified abrasive grinding polishing pad, when being used for the polishing of above-mentioned sample, the average surface roughness of the silica dioxide medium layer of polishing back silicon chip surface has reached 0.21 nanometer.
15 of above-mentioned technology continuous polishing, removing speed and workpiece surface roughness does not have significant change.
The diamond that static pressure method is synthetic is made the Nano diamond that average grain diameter is 100 nanometers through fragmentation, take by weighing above-mentioned Nano diamond 2 grams, take by weighing the prepolymer that 28 gram polyester acrylates and 50 gram polyether acrylates are formed, take by weighing properties modifier polyethylene glycol 10 grams as properties modifier, take by weighing light trigger α, alpha, alpha-dimethyl oxygen base-α phenyl acetophenone 2, gram, two (2,4,6-trimethylbenzene formyl) phenyl phosphorous oxide 1 gram, take by weighing in advance with the triethylene Glycol double methyl methacrylate: trimethylol-propane trimethacrylate is reactive diluent mixture 5 grams of 1:1, in addition, take by weighing dimethyl silicone polymer 2 grams, earlier other material except that light trigger is mixed, add light trigger again, and stir once more, make it even, prepare one and handle clean carbonate polymer matrix, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably; Speed with 1.5m/min is passed through uv cure machine, and said mixture is solidified, and obtains the solidified abrasive grinding polishing pad.
The concretion abrasive polishing pad of poly-preparation is bonded on the elastic matrix with the above-mentioned step, the mould made from mould steel of about 3 inches sizes of polishing on the high speed polisher lapper that Changchun University of Science and Technology makes, before the polishing, the average surface roughness of surface of the work is 20.6 nanometers, upper cylinder pressure is 0.3MPa during polishing, the polishing disk rotating speed is 200rpm, polishing fluid is a deionized water, the pH value of regulation system not, the flow-control of polishing fluid is at 50ml/min, and polishing time is 5min, after the polishing, on inspection, the average surface roughness of mould is 0.87 nanometer.
Abrasive material in the above-mentioned polishing pad changes alchlor or the carborundum of particle mean size in 100～300 nanometers into, and other parameter and process are constant, preparation solidified abrasive grinding polishing pad.When using this polishing pad to polish above-mentioned mould steel, keep other parameter constant, only polishing time is extended to 10 minutes, the average surface roughness of polishing back workpiece just can reach 13 nanometers.
Adopt same process, polished 11 dies, surface roughness is all about 1nm.
The cerium oxide abrasives that with average grain diameter is 1.5 microns carries out surface modification with silane coupler, take by weighing the above-mentioned cerium oxide of 20 grams through surface modification, take by weighing the prepolymer that 15 gram bisphenol A epoxy acrylates and 20 gram polyether acrylates are formed, take by weighing free radical photo-initiation Alpha-hydroxy alkyl phenones 1.5 grams, benzophenone 0.5 gram, take by weighing in advance with neopentyl glycol diethoxy double methyl methacrylate: trimethylolpropane triacrylate is reactive diluent mixture 39.5 grams of 1:1, earlier other material except that light trigger is mixed, add light trigger again, and stir once more, make it even, prepare a carbonate polymer matrix of handling 1 clean millimeters thick, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably; Speed with 1m/min is passed through uv cure machine, and said mixture is solidified, and obtains the solidified abrasive grinding polishing pad.
The solidified abrasive grinding polishing pad of poly-preparation is bonded on the elastic matrix with the above-mentioned step, the K7 plate glass of 3 inches sizes of polishing on the NANOPOL-100 polishing machine, before the polishing, the average surface roughness of glass is 4.3 nanometers, polish pressure is 16KPa, the polishing disk rotating speed is 100rpm, do not contain any abrasive material in the polishing fluid, adopting the pH value of ammoniacal liquor regulation system is 10, the flow-control of polishing fluid is at 10ml/min, and polishing time is 10min, after the polishing, on inspection, the average surface roughness of glass is 0.31 nanometer.
Change the abrasive material ceria in the above-mentioned polishing pad silica of 60 nanometers into, other process and parameter constant, preparation solidified abrasive grinding polishing pad, when being used for the polishing of K7 glass, the average surface roughness of polishing back glass surface has reached 0.48 nanometer.
On this basis, polished 20 blocks of K7 glass again, removal speed is similar, and polishing back workpiece surface roughness all is lower than 0.6nm.
Embodiment 4
The Nano silicon dioxide grinding material that with average grain diameter is 50 nanometers carries out surface modification with silane coupler, take by weighing the above-mentioned nano-cerium oxide of 4 grams through surface modification, take by weighing the prepolymer that 20 gram polyester acrylates and 45 gram polyether acrylates are formed, take by weighing properties modifier polyethylene glycol 5 grams as properties modifier, take by weighing free radical photo-initiation Alpha-hydroxy alkyl phenones 2 grams, two (2,4,6-trimethylbenzene formyl) phenyl phosphorous oxide 0.5 gram, take by weighing in advance with the polyethylene glycol double methyl methacrylate: trimethylolpropane triacrylate is reactive diluent mixture 23.5 grams of 1:1, earlier other material except that light trigger is mixed, add light trigger again, and stir once more, make it even, prepare a carbonate polymer matrix of handling 1 clean millimeters thick, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably; Speed with 2m/min is passed through uv cure machine, and said mixture is solidified, and obtains the solidified abrasive grinding polishing pad.
The solidified abrasive grinding polishing pad of poly-preparation is bonded on the elastic matrix with the above-mentioned step, nickel-phosphorus the coating on polishing 3 aluminium base hand disk wafer surfaces on the NANOPOL-100 polishing machine, before the polishing, the mean roughness on hand disk wafer surface is 1.8 nanometers, polish pressure is 20KPa, the polishing disk rotating speed is 100rpm, do not contain any abrasive material in the polishing fluid, adopting the pH value of dihydroxy ethyl ethylenediamine regulation system is 11, and the flow-control of polishing fluid is at 10ml/min, and polishing time is 12min, after the polishing, carried out the polishing of 8 aluminium base hand disk wafers altogether, on inspection, the average surface roughness of substrate is at 0.13nm-0.23nm.
Embodiment 5
The cerium oxide abrasives that with average grain diameter is 1.2 microns carries out surface modification with silane coupler, take by weighing the above-mentioned cerium oxide of 15 grams through surface modification, take by weighing the prepolymer that 20 gram polyether acrylates are formed, take by weighing properties modifier polyethylene glycol 20 grams as properties modifier, take by weighing free radical photo-initiation Alpha-hydroxy alkyl phenones 2 grams, benzophenone 0.5 gram and two (2,4,6-trimethylbenzene formyl) phenyl phosphorous oxide 0.5 gram, take by weighing in advance with the polyethylene glycol double methyl methacrylate: trimethylolpropane triacrylate is reactive diluent mixture 40 grams of 1:1, take by weighing poly dimethyl silane 2 grams as levelling agent, earlier other material except that light trigger is mixed, add light trigger again, and stir once more, make it even, prepare a carbonate polymer matrix of handling 0.8 clean millimeters thick, adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably; Speed with 1.3m/min is passed through uv cure machine, and said mixture is solidified, and obtains the solidified abrasive grinding polishing pad.
The solidified abrasive grinding polishing pad of poly-preparation is bonded on the elastic matrix with the above-mentioned step, the monocrystalline silicon of 3 inches sizes of polishing on the NANOPOL-100 polishing machine, before the polishing, the average surface roughness of monocrystalline silicon is 2.5 nanometers, polish pressure is 16KPa, the polishing disk rotating speed is 150rpm, do not contain any abrasive material in the polishing fluid, adopting the pH value of dihydroxy ethyl ethylenediamine regulation system is 11, the flow-control of polishing fluid is at 15ml/min, and polishing time is 12min, after the polishing, on inspection, the average surface roughness of monocrystalline silicon is 0.18 nanometer.Subsequently, polished 18 initial surfaces and the similar silicon chip of above-mentioned situation again, after the polishing, the surface roughness of silicon chip is all below 0.2 nanometer.
Claims (6)
1, a kind of solidified abrasive grinding polishing pad that has from debugging functions is made up of abrasive material (1), rigid layer (2), it is characterized in that described abrasive material (1) component and mass percent are as follows:
The abrasive material 1～20% of granularity in 1 nanometer～40 micron
The prepolymer 20～80% of polyacrylate
Free radical photo-initiation 1～3%
Dimethyl silicone polymer or acrylate copolymer 0～2%
System crosslink density property regulation additive 0～20%
The reactive diluent 5～40% of acroleic acid esterification.
2, the solidified abrasive grinding polishing pad that has from debugging functions according to claim 1 is characterized in that: described abrasive material is realized the abrasive material that surface hydrophilicity changes to lipophile for through the mechanochemistry surface modification.
3, the solidified abrasive grinding polishing pad that has from debugging functions according to claim 1, it is characterized in that: described rigid layer (2) also is pasted with elastic layer (3).
4, the described preparation method who has from the solidified abrasive grinding polishing pad of debugging functions of a kind of claim 1 is characterized in that may further comprise the steps:
(1), reactive diluent and free radical photo-initiation, property regulation additive, dimethyl silicone polymer or the acrylate copolymer component of abrasive material, polyacrylate prepolymer, propernoic acid esterization fully mixed, obtain mixture;
(2), prepare one and handle clean rigid polymer matrix;
(3), adopt the method for serigraphy that said mixture is spread upon on the rigid polymer matrix equably;
(4), by uv cure machine, said mixture is solidified.
5, the preparation method who has from the solidified abrasive grinding polishing pad of debugging functions according to claim 4, it is characterized in that: described step also was included in before described (1) step, in advance described abrasive material is passed through the mechanochemistry surface modification, the realization abrasive surface to oil loving transformation, makes abrasive material and polymeric system that this process of compatibility preferably be arranged from hydrophily.
6, the preparation method who has from the solidified abrasive grinding polishing pad of debugging functions according to claim 4, its feature: described step also was included in after described (4) step, pasted this step of one deck elastic layer on rigid layer again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100248219A CN100506487C (en) | 2007-06-29 | 2007-06-29 | Solidified abrasive lapping polishing pad having self-modifying function and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100248219A CN100506487C (en) | 2007-06-29 | 2007-06-29 | Solidified abrasive lapping polishing pad having self-modifying function and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101096080A CN101096080A (en) | 2008-01-02 |
| CN100506487C true CN100506487C (en) | 2009-07-01 |
Family
ID=39010273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100248219A Expired - Fee Related CN100506487C (en) | 2007-06-29 | 2007-06-29 | Solidified abrasive lapping polishing pad having self-modifying function and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100506487C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101817172A (en) * | 2010-04-12 | 2010-09-01 | 南京航空航天大学 | Grinding and polishing pad for cured grinding material based on thermal initiation curing and preparation method thereof |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101850541B (en) * | 2009-04-02 | 2013-05-08 | 贝达先进材料股份有限公司 | Polishing pad with barrier layer and manufacturing method thereof |
| CN101704224B (en) * | 2009-11-06 | 2011-05-04 | 南京航空航天大学 | Solidified abrasive grinding and polishing pad with transition layer and bonding layer |
| CN102120315B (en) * | 2010-12-01 | 2012-12-19 | 浙江浦江敏锐精密机械科技有限公司 | Polishing disk for polishing crystal glass |
| CN102601747B (en) * | 2011-01-20 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of grinding pad and preparation method thereof, using method |
| CN102172879B (en) * | 2011-02-23 | 2012-12-26 | 南京航空航天大学 | Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad |
| CN102267105A (en) * | 2011-08-05 | 2011-12-07 | 南京航空航天大学 | Grinding polishing pad of iron-containing consolidation grinding material |
| CN102862128B (en) * | 2012-09-20 | 2015-10-21 | 北京国瑞升科技股份有限公司 | A kind of product with concave-convex structure and preparation method thereof |
| CN103005794B (en) * | 2012-11-06 | 2015-07-08 | 蓝思科技股份有限公司 | Silk screen printing wax patch machining process |
| CN103522214A (en) * | 2012-12-05 | 2014-01-22 | 郑州新安华砂轮有限公司 | UV grinding wheel and production method of UV grinding wheel |
| CN103522215A (en) * | 2012-12-08 | 2014-01-22 | 郑州新安华砂轮有限公司 | UV grinding tool grease and personalized grinding tool production method |
| CN104139346B (en) * | 2014-07-23 | 2017-05-03 | 上虞市自远磨具有限公司 | Anti-blocking grinding tool and manufacturing method thereof |
| CN105171627B (en) * | 2015-09-01 | 2018-12-04 | 河南科技学院 | A kind of elastic layer and preparation method thereof of Roll-to-Roll chemical-mechanical polishing mathing concretion abrasive polishing roll |
| CN105150120B (en) * | 2015-09-01 | 2018-03-30 | 河南科技学院 | A kind of Roll to Roll chemical-mechanical polishing mathings rigid layer of concretion abrasive polishing roll and preparation method thereof |
| CN108070357A (en) * | 2016-11-12 | 2018-05-25 | 黄志萍 | A kind of abrasive material formula finely polished for glass and semiconductor |
| CN107099253A (en) * | 2017-04-19 | 2017-08-29 | 台山市远鹏研磨科技有限公司 | A kind of Nano diamond polished leather and preparation method thereof |
| KR101945874B1 (en) * | 2017-08-07 | 2019-02-11 | 에스케이씨 주식회사 | Surface treated window for polishing pad and polishing pad comprising the same |
| CN109333390B (en) * | 2018-09-26 | 2023-08-01 | 东莞市鼎泰鑫电子有限公司 | Rubber substrate organic ceramic grinding block and preparation method thereof |
| CN112876950A (en) * | 2021-03-02 | 2021-06-01 | 河北思瑞恩新材料科技有限公司 | Dry-wet abrasive belt for metal polishing and preparation method thereof |
| CN113579993B (en) * | 2021-07-30 | 2023-02-24 | 河南科技学院 | Chemical mechanical polishing pad and preparation method and application thereof |
| CN113547449B (en) * | 2021-07-30 | 2022-06-10 | 河南科技学院 | Fixed abrasive particle chemical mechanical polishing pad with self-deformability and preparation method and application thereof |
| CN116038551B (en) * | 2023-01-10 | 2023-12-29 | 燕山大学 | Photochemical mechanical grinding method and photosensitive active grinding liquid |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337281B1 (en) * | 1992-08-19 | 2002-01-08 | Rodel Holdings Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
| US6953489B2 (en) * | 2001-12-31 | 2005-10-11 | Hynix Semiconductor Inc. | Capsulated abrasive composition and polishing pad using the same |
| CN1792554A (en) * | 2005-12-23 | 2006-06-28 | 浙江工业大学 | Method for preparing grinding dish of photosensitive resin binding agent |
| CN1830627A (en) * | 2005-03-08 | 2006-09-13 | 罗门哈斯电子材料Cmp控股股份有限公司 | Water-based polishing pads and methods of manufacture |
| US7198544B2 (en) * | 2001-12-28 | 2007-04-03 | Applied Materials, Inc. | Polishing pad with window |
| US7217179B2 (en) * | 2004-10-14 | 2007-05-15 | Jsr Corporation | Polishing pad |
-
2007
- 2007-06-29 CN CNB2007100248219A patent/CN100506487C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337281B1 (en) * | 1992-08-19 | 2002-01-08 | Rodel Holdings Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
| US7198544B2 (en) * | 2001-12-28 | 2007-04-03 | Applied Materials, Inc. | Polishing pad with window |
| US6953489B2 (en) * | 2001-12-31 | 2005-10-11 | Hynix Semiconductor Inc. | Capsulated abrasive composition and polishing pad using the same |
| US7217179B2 (en) * | 2004-10-14 | 2007-05-15 | Jsr Corporation | Polishing pad |
| CN1830627A (en) * | 2005-03-08 | 2006-09-13 | 罗门哈斯电子材料Cmp控股股份有限公司 | Water-based polishing pads and methods of manufacture |
| CN1792554A (en) * | 2005-12-23 | 2006-06-28 | 浙江工业大学 | Method for preparing grinding dish of photosensitive resin binding agent |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101817172A (en) * | 2010-04-12 | 2010-09-01 | 南京航空航天大学 | Grinding and polishing pad for cured grinding material based on thermal initiation curing and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101096080A (en) | 2008-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100506487C (en) | Solidified abrasive lapping polishing pad having self-modifying function and preparation method | |
| CN101428404A (en) | Fixed abrasive grinding polishing pad and method of manufacturing the same | |
| CN101817172B (en) | Grinding and polishing pad for cured grinding material based on thermal initiation curing and preparation method thereof | |
| US7594845B2 (en) | Abrasive article and method of modifying the surface of a workpiece | |
| CN101767318B (en) | Granulation polishing film, preparing method thereof and application thereof | |
| CN1165975C (en) | Method of planarizing upper surface of semiconductor wafer | |
| CN102172879B (en) | Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad | |
| CN101367189A (en) | Silicon slice glazed surface scuffing control method | |
| CN102601747B (en) | A kind of grinding pad and preparation method thereof, using method | |
| CN102356139A (en) | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same | |
| CN104209879B (en) | Method for manufacturing soluble fixed soft abrasive-polishing film | |
| CN1108590A (en) | Method for the polishing and finishing of optical lenses | |
| CN102049723A (en) | Method for polishing a semiconductor wafer | |
| EP1534468B1 (en) | Abrasive articles with resin control additives | |
| CN108161774A (en) | Grinding pad and its production method | |
| CN103231302A (en) | Method for obtaining super-smooth surface low-sub-surface-damage crystal | |
| CN100443260C (en) | Scatheless grinding method for rigid, fragile crystal wafer | |
| CN105922145B (en) | A kind of surface polishing diamond mill and preparation method thereof | |
| Li et al. | Fixed abrasive lapping and polishing of hard brittle materials | |
| CN110039381A (en) | The Ultraprecise polished method of cylindrical roller | |
| CN102407483A (en) | High-efficiency nano-precision reducing method for semiconductor wafer | |
| CN102528641A (en) | Ceramic ball lapping method based on combined-type fixation abrasive material grinding disc | |
| Liu et al. | Fabrication of ultra-fine abrasive polishing pads by gel technique | |
| CN103406840B (en) | A kind of preparation method of metallographic magnetic abrasive disk | |
| CN100417495C (en) | Method for preparing ultrafine micro-powdered polishing film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090701 Termination date: 20160629 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |