CN100480210C - 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 - Google Patents
透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 Download PDFInfo
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- CN100480210C CN100480210C CNB2006101219187A CN200610121918A CN100480210C CN 100480210 C CN100480210 C CN 100480210C CN B2006101219187 A CNB2006101219187 A CN B2006101219187A CN 200610121918 A CN200610121918 A CN 200610121918A CN 100480210 C CN100480210 C CN 100480210C
- Authority
- CN
- China
- Prior art keywords
- oxide
- transparent conductive
- gained
- sintered sheets
- atomic ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 title claims abstract description 259
- 239000004020 conductor Substances 0.000 title claims description 156
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 249
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 247
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 226
- 239000011787 zinc oxide Substances 0.000 claims abstract description 113
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 93
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 78
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 46
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 45
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000005477 sputtering target Methods 0.000 claims abstract description 45
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims abstract description 43
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000011701 zinc Substances 0.000 claims description 392
- 239000011248 coating agent Substances 0.000 claims description 178
- 238000000576 coating method Methods 0.000 claims description 178
- 239000000203 mixture Substances 0.000 claims description 113
- 238000002834 transmittance Methods 0.000 claims description 34
- 238000005245 sintering Methods 0.000 claims description 29
- -1 metal oxide stannic oxide Chemical class 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 35
- 238000004544 sputter deposition Methods 0.000 abstract description 22
- 239000000470 constituent Substances 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 195
- 238000004519 manufacturing process Methods 0.000 description 177
- 239000002994 raw material Substances 0.000 description 127
- 239000010408 film Substances 0.000 description 102
- 239000000758 substrate Substances 0.000 description 101
- 125000004429 atom Chemical group 0.000 description 83
- 239000010410 layer Substances 0.000 description 51
- 238000005259 measurement Methods 0.000 description 50
- 238000000034 method Methods 0.000 description 45
- 150000001875 compounds Chemical class 0.000 description 34
- 238000002425 crystallisation Methods 0.000 description 33
- 230000008025 crystallization Effects 0.000 description 33
- 238000000227 grinding Methods 0.000 description 33
- 230000000704 physical effect Effects 0.000 description 33
- 229910000457 iridium oxide Inorganic materials 0.000 description 23
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 238000005401 electroluminescence Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 20
- 238000005530 etching Methods 0.000 description 19
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 17
- 229910003449 rhenium oxide Inorganic materials 0.000 description 17
- 229910052596 spinel Inorganic materials 0.000 description 14
- 239000011029 spinel Substances 0.000 description 14
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 description 13
- 238000002156 mixing Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 11
- 150000002894 organic compounds Chemical class 0.000 description 11
- 238000005469 granulation Methods 0.000 description 8
- 230000003179 granulation Effects 0.000 description 8
- 238000005381 potential energy Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000002604 ultrasonography Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229920006289 polycarbonate film Polymers 0.000 description 3
- 229920005668 polycarbonate resin Polymers 0.000 description 3
- 239000004431 polycarbonate resin Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- JLUUVUUYIXBDCG-UHFFFAOYSA-N 6-[1-benzyl-6-(4-methylpiperazin-1-yl)benzimidazol-2-yl]-n,3-dimethyl-[1,2,4]triazolo[4,3-a]pyrazin-8-amine Chemical compound C=1N2C(C)=NN=C2C(NC)=NC=1C1=NC2=CC=C(N3CCN(C)CC3)C=C2N1CC1=CC=CC=C1 JLUUVUUYIXBDCG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012789 electroconductive film Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- YJZATOSJMRIRIW-UHFFFAOYSA-N [Ir]=O Chemical class [Ir]=O YJZATOSJMRIRIW-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP245322/1998 | 1998-08-31 | ||
JP24532298A JP4233641B2 (ja) | 1998-08-31 | 1998-08-31 | 透明導電膜用ターゲットおよび透明導電ガラスならびに透明導電フィルム |
JP251200/1998 | 1998-09-04 | ||
JP5046/1999 | 1999-01-12 | ||
JP58384/1999 | 1999-03-05 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998019828A Division CN1281544C (zh) | 1998-08-31 | 1999-08-19 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1915898A CN1915898A (zh) | 2007-02-21 |
CN100480210C true CN100480210C (zh) | 2009-04-22 |
Family
ID=17131946
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101219187A Expired - Fee Related CN100480210C (zh) | 1998-08-31 | 1999-08-19 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
CNB2005100791831A Expired - Fee Related CN100513353C (zh) | 1998-08-31 | 1999-08-19 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100791831A Expired - Fee Related CN100513353C (zh) | 1998-08-31 | 1999-08-19 | 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4233641B2 (ja) |
CN (2) | CN100480210C (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6669830B1 (en) * | 1999-11-25 | 2003-12-30 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and process for producing the sputtering target |
JP4906027B2 (ja) * | 2003-04-01 | 2012-03-28 | 日立マクセル株式会社 | 複合化酸化インジウム粒子およびその製造方法、ならびに導電性塗料、導電性塗膜および導電性シート |
JP4933756B2 (ja) * | 2005-09-01 | 2012-05-16 | 出光興産株式会社 | スパッタリングターゲット |
JP4804867B2 (ja) * | 2005-10-18 | 2011-11-02 | 出光興産株式会社 | 透明導電膜、透明電極、電極基板及びその製造方法 |
CN102337505A (zh) | 2005-09-01 | 2012-02-01 | 出光兴产株式会社 | 溅射靶、透明导电膜、透明电极和电极基板及其制造方法 |
JP4947942B2 (ja) * | 2005-09-20 | 2012-06-06 | 出光興産株式会社 | スパッタリングターゲット |
KR101080527B1 (ko) * | 2005-09-20 | 2011-11-04 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 투명 도전막 및 투명 전극 |
JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
JP5000937B2 (ja) | 2006-06-30 | 2012-08-15 | 三菱電機株式会社 | 半導体デバイスの製造方法 |
JP4156021B1 (ja) | 2008-01-29 | 2008-09-24 | Fcm株式会社 | 電極基板 |
WO2010058533A1 (ja) * | 2008-11-20 | 2010-05-27 | 出光興産株式会社 | ZnO-SnO2-In2O3系酸化物焼結体及び非晶質透明導電膜 |
US8568621B2 (en) * | 2009-06-30 | 2013-10-29 | Idemitsu Kosan Co., Ltd. | Transparent conductive film |
CN103038834A (zh) * | 2010-06-04 | 2013-04-10 | 奈米新素材株式会社 | 透明导电膜、透明导电膜用靶及透明导电膜用靶的制造方法 |
JP2012031521A (ja) * | 2011-09-12 | 2012-02-16 | Idemitsu Kosan Co Ltd | スパッタリングターゲット及び透明導電膜 |
CN104649664A (zh) * | 2013-11-21 | 2015-05-27 | 青岛润鑫伟业科贸有限公司 | 一种二氧化钼导电陶瓷材料 |
TWI720188B (zh) * | 2016-04-26 | 2021-03-01 | 日商出光興產股份有限公司 | 氧化物燒結體、濺鍍靶及氧化物半導體膜 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1068695A (zh) * | 1992-07-31 | 1993-02-03 | 中国科学院上海硅酸盐研究所 | 长期工作于高温下的透明导电薄膜电加热器及其应用 |
CN1174487A (zh) * | 1996-08-21 | 1998-02-25 | 无锡市现代技术发展公司 | 透明电热膜元件的制造方法 |
US5763091A (en) * | 1994-10-27 | 1998-06-09 | Sumitomo Metal Mining Co., Ltd. | Electroconductive substrate and method for forming the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997001853A1 (fr) * | 1995-06-28 | 1997-01-16 | Idemitsu Kosan Co., Ltd. | Stratifie transparent conducteur et ecran tactile realise a partir dudit stratifie |
-
1998
- 1998-08-31 JP JP24532298A patent/JP4233641B2/ja not_active Expired - Fee Related
-
1999
- 1999-08-19 CN CNB2006101219187A patent/CN100480210C/zh not_active Expired - Fee Related
- 1999-08-19 CN CNB2005100791831A patent/CN100513353C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1068695A (zh) * | 1992-07-31 | 1993-02-03 | 中国科学院上海硅酸盐研究所 | 长期工作于高温下的透明导电薄膜电加热器及其应用 |
US5763091A (en) * | 1994-10-27 | 1998-06-09 | Sumitomo Metal Mining Co., Ltd. | Electroconductive substrate and method for forming the same |
CN1174487A (zh) * | 1996-08-21 | 1998-02-25 | 无锡市现代技术发展公司 | 透明电热膜元件的制造方法 |
Non-Patent Citations (1)
Title |
---|
注Sb/Bi氧化锡薄膜化学结构. 朱永法等.真空科学与技术,第14卷第5期. 1994 * |
Also Published As
Publication number | Publication date |
---|---|
CN1699262A (zh) | 2005-11-23 |
JP2000072537A (ja) | 2000-03-07 |
CN100513353C (zh) | 2009-07-15 |
JP4233641B2 (ja) | 2009-03-04 |
CN1915898A (zh) | 2007-02-21 |
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