CN100474580C - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN100474580C
CN100474580C CN 200610074400 CN200610074400A CN100474580C CN 100474580 C CN100474580 C CN 100474580C CN 200610074400 CN200610074400 CN 200610074400 CN 200610074400 A CN200610074400 A CN 200610074400A CN 100474580 C CN100474580 C CN 100474580C
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China
Prior art keywords
electrode
variable resistance
layered product
layer
light
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CN1848426A (en
Inventor
金泽实雄
下条信荣
松冈大
须藤公夫
沼田真
斋藤洋
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TDK Corp
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TDK Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

Description

Light-emitting device
Technical field
The present invention relates to light-emitting device.
Background technology
As this light-emitting device, known having comprises semiconductor light-emitting elements and is connected in parallel in the variable-resistance light-emitting device of this semiconductor light-emitting elements (for example, with reference to TOHKEMY 2001-15815 communique).In the light-emitting device of in TOHKEMY 2001-15815 communique, putting down in writing, the variable resistor of semiconductor light-emitting elements by being connected in parallel, (ElectrostaticDischarge: static discharge) fluctuation is protected from ESD.
, semiconductor light-emitting elements generates heat when its luminous work.When semiconductor light-emitting elements is in high temperature, its luminous action is exerted an influence.Therefore, the heat that needs effectively diffusion to produce.Particularly, when semiconductor light-emitting elements is transparent when resin-sealed on by optics, be difficult to spread the heat that produces in the semiconductor light-emitting elements.
Summary of the invention
The object of the present invention is to provide the light-emitting device that can effectively be diffused in the heat that produces in the semiconductor light-emitting elements.
The light-emitting device that the present invention is correlated with possesses semiconductor light-emitting elements and laminate sheet-like variable resistance.Laminate sheet-like variable resistance has: layered product, dispose variable resistance part on this layered product, it is main component and the variable resistance layer of performance voltage non linear characteristic and a plurality of internal electrodes that dispose in the mode that clips this variable resistance layer that this variable resistance part has with ZnO; With, a plurality of outer electrodes, it is configured on the outer surface of layered product, is connected to the internal electrode of the correspondence in a plurality of internal electrodes simultaneously.Semiconductor light-emitting elements is configured on the laminated-type sheet-like variable resistance, is connected in the outer electrode of the correspondence in a plurality of outer electrodes in the mode that is connected in parallel in variable resistance part.
In the light-emitting device that the present invention is correlated with, because laminate sheet-like variable resistance is connected in parallel in semiconductor light-emitting elements, so, can be from ESD wave protection semiconductor light-emitting elements.
In addition, in the present invention, the laminated-type sheet-like variable resistance has outer electrode that is connected in semiconductor light-emitting elements and the internal electrode that is connected in this outer electrode.Thus, the heat that produces in semiconductor light-emitting elements is mainly along outer electrode and internal electrode diffusion.The heat radiation approach of the heat that produces in the semiconductor light-emitting elements is enlarged, and can spread the heat that produces in the semiconductor light-emitting elements effectively.In addition, variable resistance layer is main component with ZnO.ZnO has the pyroconductivity with equal degree such as the aluminium oxide that usually uses as the heat release substrate, has better pyroconductivity.Therefore, the generation of the diffusion that can suppress the heat of electrode internally situation about being hindered by variable resistance layer.
The preferred semiconductor light-emitting component is configured to, the face that it extends with respect to the direction of the stacked direction of the layered product in being parallel to laminate sheet-like variable resistance.At this moment, a plurality of internal electrodes, with respect to laminate sheet-like variable resistance in the face that disposes semiconductor light-emitting elements face in opposite directions, set up along the direction that this face extends.Thus, for each internal electrode, the heat release approach of the outer surface from this internal electrode to laminate sheet-like variable resistance shortens.Consequently, can more effectively carry out the diffusion of the heat of electrode internally.
Preferably, a plurality of outer electrodes comprise the pair of end electrode, and the pair of end electrode comprises respectively: the 1st electrode part is configured on the mutual outer surface in opposite directions of upwardly extending while of side of the stacked direction that is parallel to layered product; With, the 2nd electrode part, be configured in and dispose an outer surface of part 1 adjacent the time on the upwardly extending outer surface in the side of the stacked direction that is parallel to layered product.At this moment, semiconductor light-emitting elements is by being connected in the 2nd electrode part, and is installed on the laminate sheet-like variable resistance.Therefore, can be easily and be used to be electrically connected the installation of semiconductor light-emitting elements and outer electrode easily.
Preferably, variable resistance layer contains Pr; A plurality of outer electrodes have electrode layer, and this electrode layer is sintered on the outer surface that is formed on layered product by while and layered product and comprises Pd.At this moment, sintering in the time of by plain body of variable resistor and electrode layer, in the near interface formation of layered product and outer electrode and there is the oxide of Pr and Pd, Pr for example 2Pd 2O 5And Pr 4PdO 7Deng.Consequently, can improve the adhesion strength of layered product and outer electrode.
Present inventors are that the variable resistor of adhesion strength of the plain body of variable resistor of main component and outer electrode has carried out wholwe-hearted research to improving with ZnO.It found that the following new fact: according to contained material in layered product (becoming the base substrate (green body) of layered product by sintering) and the outer electrode (becoming the conductive paste of outer electrode by sintering), the adhesion strength of layered product and outer electrode changes.
After giving conductive paste on the outer surface of base substrate that with ZnO is main component, sintering they, obtain layered product and outer electrode.At this moment, when base substrate contains Pr (praseodymium), conductive paste contains under the situation of Pd (palladium), the adhesion strength of plain body of gained variable resistor and outer electrode is improved.
The adhesion strength of layered product and outer electrode improves such effect, is considered to because following phenomenon when sintering causes.When sintered body and conductive paste, contained Pr moves to the near surface of base substrate in the base substrate, that is, and and the near interface of base substrate and conductive paste.So, move to base substrate and conductive paste near interface Pr and in conductive paste contained Pd spread mutually.At this moment, can form the oxide of Pr and Pd at the near interface of layered product and outer electrode.Oxide by this Pr and Pd produces fixed effect, is improved by the layered product of sintering gained and the adhesion strength of outer electrode.
Preferably, variable resistance layer contains Pr, and a plurality of outer electrodes have on the outer surface that is configured in layered product and comprise the electrode layer of Pd, at the near interface of layered product and electrode layer, have the oxide of Pd contained in Pr contained in the variable resistance layer and the electrode layer.At this moment, owing to have the oxide of Pd contained in Pr contained in the layered product and the electrode layer at the near interface of layered product and outer electrode, so, can improve the adhesion strength of layered product and outer electrode.
Preferably, electrode layer was sintered on the outer surface that is formed on layered product by while and layered product.At this moment, at the near interface of layered product and outer electrode, the oxide of Pd contained in Pr contained in the variable resistance layer and the electrode layer is positively existed.
Preferably, a plurality of outer electrodes comprise: a pair of the 1st outer electrode that disposes on the 1st outer surface of layered product and with the 2nd outer surface of the 1st outer surface layered product in opposite directions on a pair of the 2nd outer electrode that disposes; A plurality of internal electrodes comprise: the 1st electrode part that overlaps each other in a plurality of internal electrodes between the adjacent internal electrode and the 2nd electrode part of partly drawing from the 1st electrode in the mode of exposing at the 1st and the 2nd outer surface; A pair of the 1st outer electrode and a pair of the 2nd outer electrode partly are electrically connected on the internal electrode of the correspondence in a plurality of internal electrodes respectively by the 2nd electrode.At this moment, semiconductor light-emitting elements is installed on the laminate sheet-like variable resistance by being connected in the 2nd outer electrode.Therefore, can be easily and be used to be electrically connected the installation of semiconductor light-emitting elements and the 2nd outer electrode easily.In addition, laminate sheet-like variable resistance with the state of the 1st outer surface with respect to external substrate or external mechanical etc., is installed on external substrate or the external mechanical etc.Therefore, can easily and carry out the installation of laminate sheet-like variable resistance easily.
Preferably, the 1st outer surface and the 2nd outer surface extend to the direction of the laminating direction that is parallel to layered product.At this moment, a plurality of internal electrodes are set up along the direction of the 1st outer surface and the extension of the 2nd outer surface.Thus, for each internal electrode, the heat release approach of the outer surface from this internal electrode to laminate sheet-like variable resistance shortens.Consequently, can more effectively carry out the diffusion of the heat of electrode internally.
Preferably, semiconductor light-emitting elements is connected in a pair of the 2nd outer electrode and is configured on the laminate sheet-like variable resistance by projection (bump).At this moment, can be easily and carry out the installation of semiconductor light-emitting elements easily to laminate sheet-like variable resistance.
Preferably, semiconductor light-emitting elements has the semiconductor regions of the 1st conductivity type and the semiconductor regions of the 2nd conductivity type, according to putting on voltage between the 1st conductive-type semiconductor region and the 2nd conductive-type semiconductor region and luminous.
Preferably, possess a plurality of semiconductor light-emitting elements; Direction along regulation on layered product disposes a plurality of variable resistance parts; A plurality of outer electrodes have: a plurality of the 1st outer electrodes that dispose on the 1st outer surface of layered product and with the 2nd outer surface of the 1st outer surface layered product in opposite directions on a plurality of the 2nd outer electrodes of disposing; The 1st outer surface extends to the direction of the direction that is parallel to regulation; A plurality of internal electrodes that a plurality of variable resistance parts have comprise: the 1st electrode part that overlaps each other between the adjacent internal electrode in a plurality of internal electrodes and the 2nd electrode part of partly drawing from the 1st electrode in the mode of exposing at the 1st and the 2nd outer surface; A plurality of the 1st outer electrodes and a plurality of the 2nd outer electrode partly are connected electrically on the 1st electrode part of internal electrode corresponding in a plurality of internal electrodes by the 2nd electrode respectively; A plurality of semiconductor light-emitting elements are configured on the laminate sheet-like variable resistance, to be connected in parallel in the mode of variable resistance part corresponding in a plurality of variable resistance parts, are connected to the 2nd corresponding in a plurality of the 2nd outer electrodes outer electrode.At this moment, because each variable resistance part is connected in parallel in semiconductor light-emitting elements corresponding in a plurality of semiconductor light-emitting elements, can be from each semiconductor light-emitting elements of ESD wave protection.
In a plurality of variable resistance parts of configuration, a plurality of the 1st outer electrodes are configured on the 1st outer surface on layered product.A plurality of the 1st outer electrodes are electrically connected on corresponding internal electrode by the 2nd electrode part.Therefore, by making the 1st outer surface to install with the installed surface state in opposite directions of external substrate or external mechanical etc., a plurality of variable resistance parts are with respect to installations such as external substrate or external mechanical.Its result can dwindle erection space when a plurality of variable resistance part is installed.In addition, can reduce the installation cost that is used to install a plurality of variable resistance parts, easily install.
A plurality of the 2nd outer electrodes are configured on the 2nd outer surface.A plurality of the 2nd outer electrodes partly are electrically connected on corresponding internal electrode by the 2nd electrode.Thus, can utilize the 2nd outer surface,, a plurality of semiconductor light-emitting elements are installed easily to be connected in parallel in the mode of variable resistance part.
In addition, because laminate sheet-like variable resistance has the 2nd outer electrode that is connected in semiconductor light-emitting elements and the internal electrode that is connected in the 2nd outer electrode, so the heat that produces in semiconductor light-emitting elements mainly spreads along the 2nd outer electrode and internal electrode.Thus, the heat radiation approach of the heat that produces in the semiconductor light-emitting elements obtains enlarging, and can be diffused in the heat that produces in the semiconductor light-emitting elements effectively.
Preferably, the 1st outer surface and the 2nd outer surface extend to the direction of the laminating direction that is parallel to layered product.At this moment, a plurality of internal electrodes are set up along the direction of the 1st outer surface and the extension of the 2nd outer surface.Thus, for each internal electrode, the heat release approach of the outer surface from this internal electrode to laminate sheet-like variable resistance shortens, and can more effectively carry out the diffusion by the heat of internal electrode.
Preferably, variable resistance layer contains Pr; A plurality of the 1st outer electrodes have electrode layer respectively, this electrode layer by simultaneously and layered product be sintered and be formed on the 1st outer surface and comprise Pd; A plurality of the 2nd outer electrodes have electrode layer respectively, this electrode layer by simultaneously and layered product be sintered and be formed on the 2nd outer surface and comprise Pd.At this moment, as mentioned above, can improve the adhesion strength of layered product and each outer electrode.
Preferably, variable resistance layer contains Pr; A plurality of the 1st outer electrodes have the electrode layer that is configured on the 1st outer surface and comprises Pd respectively; A plurality of the 2nd outer electrodes have the electrode layer that is configured on the 2nd outer surface and comprises Pd respectively; At the near interface of layered product and electrode layer, there is the oxide of Pd contained in Pr contained in the variable resistance layer and the electrode layer.At this moment, as mentioned above, can improve the adhesion strength of layered product and the 1st and the 2nd outer electrode.
Preferably, electrode layer by simultaneously and layered product be sintered be formed on the 1st and aforementioned the 2nd outer surface on.At this moment, can make above-mentioned oxide positively be present in the near interface of layered product and the 1st and the 2nd outer electrode.
Preferably, layered product is to be the roughly tabular of interarea with the 1st outer surface and the 2nd outer surface; The interval of the 1st outer surface and the 2nd outer surface is set to the length on the direction of afore mentioned rules less than layered product.At this moment, can reach the purpose of the slimming (low-profile) of laminate sheet-like variable resistance, the slimming of light-emitting device also becomes possibility.
Preferably, the direction of regulation is the stacked direction of variable resistance layer.
Preferably, the direction of regulation is the direction parallel with variable resistance layer.
Preferably, a plurality of the 1st outer electrodes are aligned to 2 dimensions and arrange on the 1st outer surface, and a plurality of the 2nd outer electrodes are aligned to 2 dimensions and arrange on the 2nd outer surface.
Preferably, each semiconductor light-emitting elements is connected in the 2nd corresponding outer electrode by projection (bump), is configured on the laminate sheet-like variable resistance.At this moment, can carry out the installation of semiconductor light-emitting elements as easy as rolling off a log and easily to laminate sheet-like variable resistance.
In addition, the present invention's light-emitting device of being correlated with possesses a plurality of semiconductor light-emitting elements and laminate sheet-like variable resistance; Laminate sheet-like variable resistance has layered product, direction along regulation on this layered product disposes a plurality of variable resistance parts, it is main component and the variable resistance layer of performance voltage non linear characteristic and a plurality of internal electrodes that dispose in the mode that clips this variable resistance layer that each variable resistance part has with ZnO; A plurality of semiconductor light-emitting elements are configured on the laminated-type sheet-like variable resistance, are connected in parallel in the variable resistance part of the correspondence in a plurality of variable resistance parts respectively.
In the light-emitting device that the present invention is correlated with, because each variable resistance part is connected in parallel in the semiconductor light-emitting elements of the correspondence in a plurality of semiconductor light-emitting elements, so, can be from each semiconductor light-emitting elements of ESD wave protection.Because layered product contains a plurality of variable resistance parts, so, when being installed, a plurality of variable resistance part can dwindle erection space.Can reduce the installation cost that is used to install a plurality of variable resistance parts, can easily install.
In addition, in the present invention, because the main electrode diffusion internally of the heat that produces in the semiconductor light-emitting elements, so the heat radiation approach of the heat that produces in semiconductor light-emitting elements enlarges.Its result can be diffused in the heat that produces in the semiconductor light-emitting elements effectively.Because variable resistance layer is main component with ZnO, so as mentioned above, the generation of the situation that the diffusion that can suppress the heat of electrode is internally hindered by variable resistance layer.
In addition, the present invention's light-emitting device of being correlated with possesses a plurality of semiconductor light-emitting elements and laminate sheet-like variable resistance; Laminate sheet-like variable resistance possesses: the layered product that is laminated with ZnO a plurality of variable resistance layers that are main component and performance voltage non linear characteristic, a plurality of the 1st outer electrodes that dispose on the 1st outer surface of layered product and with the 2nd outer surface of the 1st outer surface layered product in opposite directions on a plurality of the 2nd outer electrodes of disposing; The 1st outer surface extends to the parallel direction of the stacked direction of a plurality of variable resistance layers; In layered product, has variable resistance layer and a plurality of variable resistance parts of a plurality of internal electrodes of disposing in the mode that clips variable resistance layer, along the direction configuration parallel with the 1st outer surface; A plurality of internal electrodes comprise: the 1st electrode part that adjacent internal electrode overlaps each other each other in a plurality of internal electrodes and the 2nd electrode part of partly drawing from the 1st electrode in the mode of exposing at the 1st and the 2nd outer surface; A plurality of the 1st outer electrodes and a plurality of the 2nd outer electrode partly are electrically connected in a plurality of internal electrodes the 1st electrode part of corresponding internal electrode respectively by the 2nd electrode; A plurality of semiconductor light-emitting elements are configured on the laminated-type sheet-like variable resistance, and to be connected in parallel in the mode of variable resistance part corresponding in a plurality of variable resistance parts, are connected to the 2nd outer electrode of the correspondence in a plurality of the 2nd outer electrodes.
In the light-emitting device that the present invention is correlated with, because each variable resistance part is connected in parallel in the semiconductor light-emitting elements of the correspondence in a plurality of semiconductor light-emitting elements, so, can be from each semiconductor light-emitting elements of ESD wave protection.
In addition, in the present invention, by so that state in opposite directions such as the installed surface of the 1st outer surface and external substrate or external mechanical etc. is installed laminate sheet-like variable resistance (light-emitting device), a plurality of variable resistance parts are mounted with respect to external substrate or external mechanical etc.Its result can dwindle erection space when a plurality of variable resistance part is installed.Can reduce the installation cost that is used to install a plurality of variable resistance parts, can easily install.
In addition, in the present invention, a plurality of the 2nd outer electrodes are configured on the 2nd outer surface.A plurality of the 2nd outer electrodes partly are electrically connected on corresponding internal electrode by the 2nd electrode.Thus, can utilize the 2nd outer surface,, a plurality of semiconductor light-emitting elements are installed easily to be connected in parallel in the mode of variable resistance part.
In addition, in the present invention, laminate sheet-like variable resistance has the 2nd outer electrode that is connected in semiconductor light-emitting elements and the internal electrode that is connected in the 2nd outer electrode.Thus, the heat that produces in semiconductor light-emitting elements is mainly along the 2nd outer electrode and internal electrode diffusion.The heat radiation approach of the heat that produces in the semiconductor light-emitting elements enlarges, and can be diffused in the heat that produces in the semiconductor light-emitting elements effectively.
Can provide the light-emitting device that can effectively be diffused in the heat that produces in the semiconductor light-emitting elements according to the present invention.
By following given detailed description and the accompanying drawing that only provides by way of example, the present invention will more clearly be understood, and still, these can not think limitation of the invention.
The further scope of application of the present invention can clearly obtain from given below specifying.But, obviously, following specify with specific only be the most preferred embodiment of the present invention that provides by way of example for example, those skilled in the art obviously can specify various changes and the modification of making within the spirit and scope of the present invention according to this.
Description of drawings
Fig. 1 is the approximate vertical view of the relevant light-emitting device of expression the 1st execution mode.
Fig. 2 is the summary upward view of the relevant light-emitting device of expression the 1st execution mode.
Fig. 3 is the figure that is used for illustrating the section formation of the III-III line along Fig. 1.
Fig. 4 is the figure that is used for illustrating the section formation of the IV-IV line along Fig. 1.
Fig. 5 is the flow chart that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 1st execution mode is relevant.
Fig. 6 is the figure that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 1st execution mode is relevant.
Fig. 7 is the figure that is used to illustrate that the section of the light-emitting device that the 2nd execution mode is relevant constitutes.
Fig. 8 is the figure that is used to illustrate that the section of the light-emitting device that the 3rd execution mode is relevant constitutes.
Fig. 9 is the figure that is used for illustrating the section formation of the IX-IX line along Fig. 8.
Figure 10 is the approximate vertical view of the relevant light-emitting device of expression the 4th execution mode.
Figure 11 is the summary upward view of the relevant light-emitting device of expression the 4th execution mode.
Figure 12 is the figure that is used for illustrating the section formation of the XII-XII line along Figure 10.
Figure 13 is the figure that is used for illustrating the section formation of the XIII-XIII line along Figure 10.
Figure 14 is the figure that is used for illustrating the section formation of the XIV-XIV line along Figure 10.
Figure 15 is the figure that is used for illustrating the section formation of the XV-XV line along Figure 10.
Figure 16 is the figure of the variation of expression the 2nd internal electrode.
Figure 17 is the figure that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 4th execution mode is relevant.
Embodiment
Below, with reference to accompanying drawing, describe preferred implementation of the present invention in detail.In addition, use same-sign for identical element or key element with identical function in explanation, the repetitive description thereof will be omitted.
(the 1st execution mode)
The formation of the light-emitting device LE1 that the 1st execution mode is relevant is described with reference to Fig. 1～Fig. 4.Fig. 1 is the approximate vertical view of the relevant light-emitting device of expression the 1st execution mode.Fig. 2 is the summary upward view of the relevant light-emitting device of expression the 1st execution mode.Fig. 3 is the figure that is used for illustrating the section formation of the III-III line along Fig. 1.Fig. 4 is the figure that is used for illustrating the section formation of the IV-IV line along Fig. 1.
Light-emitting device LE1 as Fig. 1～shown in Figure 4, comprises semiconductor light-emitting elements 1 and laminate sheet-like variable resistance 11.Semiconductor light-emitting elements 1 is configured on the laminate sheet-like variable resistance 11.
The formation of laminate sheet-like variable resistance 11 at first, is described.Laminate sheet-like variable resistance 11 comprises: make the roughly plain body 21 of variable resistor of rectangular shape, and a plurality of (being a pair of in the present embodiment) the 1st outer electrode 25,26, and, a plurality of (being a pair of in the present embodiment) the 2nd outer electrode 27,28.A pair of the 1st outer electrode 25,26 is configured in respectively on the 1st interarea (outer surface) 22 of the plain body 21 of variable resistor.A pair of the 2nd outer electrode 27,28 is configured in respectively on the 2nd interarea (outer surface) 23 of the plain body 21 of variable resistor.The plain body 21 of variable resistor is set to, and is about 1.0mm, wide about 0.5mm, thick about 0.3mm.Outer electrode 25 works as the input terminal electrode of laminate sheet-like variable resistance 11, and outer electrode 26 works as the output terminal electrode of laminate sheet-like variable resistance 11.Outer electrode the 27, the 28th works as the flat tip electrode (pad electrode) that is electrically connected on semiconductor light-emitting elements 1 described later.
The plain body 21 of variable resistor is constructed and is that layered product, this layered product are laminated with a plurality of variable resistance layers and the 1st internal electrode 31 and the 2nd internal electrode 41 of performance voltage non linear characteristic (below, be called " variable resistance characteristics ").The 1st internal electrode 31 and the 2nd internal electrode 41 stacked direction (being designated hereinafter simply as " stacked direction ") along variable resistance layer in the plain body 21 of variable resistor successively disposes respectively.The 1st internal electrode 31 and the 2nd internal electrode 41 are configured to, and clip one deck variable resistance layer between them at least.The 1st internal electrode 31 and the 2nd internal electrode 41 are set up along the stacked direction of variable resistance layer.In the laminate sheet-like variable resistance 11 of reality, the not visible degree in border between a plurality of variable resistance layers are turned to mutually by one.
The a pair of interarea 22,23 of the plain body 21 of variable resistor mutually in opposite directions.A pair of interarea 22,23 extends on the direction of the stacked direction that is parallel to variable resistance layer, and in addition, a pair of interarea 22,23 extends abreast with respect to the direction that is parallel to variable resistance layer.
Variable resistance layer contains ZnO (zinc oxide) as main component, also contains the metal simple-substance of thulium, Co, IIIb family element (B, Al, Ga, In), Si, Cr, Mo, alkali metal (K, Rb, Cs) and alkali earth metal (Mg, Ca, Sr, Ba) etc. or its oxide simultaneously as accessory ingredient.In the present embodiment, variable resistance layer contains Pr, Co, Cr, Ca, Si, K, Al etc. as accessory ingredient.Thus, in the variable resistance layer be main component with the 1st internal electrode 31 and the 2nd internal electrode 41 overlapping areas with ZnO the time also contain Pr.
Use Pr as rare earth metal in the present embodiment.Pr becomes the material that is used to show variable resistance characteristics.Use the reason of Pr to be, because the voltage non linear excellence, in addition, the characteristics fluctuation when producing in batches is few.Though the amount of the ZnO in the variable resistance layer is not particularly limited, still, be 100% o'clock with the quality of all materials of constituting variable resistance layer, the quality of ZnO is generally 99.8～69.0%.The thickness of variable resistance layer is, for example, and about 5～60 μ m.
The 1st internal electrode 31 comprises the 1st electrode part 33 and the 2nd electrode part 35a, 35b also as shown in Figure 3.From stacked direction, the 1st electrode part 33 overlaps each other with the 1st electrode part 43 of the 2nd internal electrode 41 described later.The 1st electrode part 33 is shape in the form of a substantially rectangular.The 2nd electrode part 35a draws from the 1st electrode part 33 in the mode of exposing on the 1st interarea 22, and performance is as the function of conductor introduction.The 2nd electrode part 35a mechanical connection and be electrically connected on outer electrode 25.The 2nd electrode part 35b draws from the 1st electrode part 33 in the mode of exposing on the 2nd interarea 23, as conductor introduction performance function.The 2nd electrode part 35b mechanical connection and be electrically connected on outer electrode 27.The 1st electrode part 33 is electrically connected on outer electrode 25 by the 2nd electrode part 35a, simultaneously, is electrically connected on outer electrode 27 by the 2nd electrode part 35b.The 2nd electrode part 35a, 35b is formed and the 1st electrode part 33 becomes one.
The 2nd internal electrode 41 also as shown in Figure 4, comprises the 1st electrode part 43 and the 2nd electrode part 45a, 45b.From stacked direction, the 1st electrode part 33 of the 1st electrode part 43 and the 1st internal electrode 31 overlaps each other.The 1st electrode part 43 is shape in the form of a substantially rectangular.The 2nd electrode part 45a draws from the 1st electrode part 43 in the mode of exposing on the 1st interarea 22, and performance is as the function of conductor introduction.The 2nd electrode part 45a mechanical connection and be electrically connected on outer electrode 26.The 2nd electrode part 45b draws from the 1st electrode part 43 in the mode of exposing on the 2nd interarea 23, and performance is as the function of conductor introduction.The 2nd electrode part 45b mechanical connection and be electrically connected on outer electrode 28.Each the 1st electrode part 43 is electrically connected on outer electrode 26 by the 2nd electrode part 45a, simultaneously, is electrically connected on outer electrode 28 by the 2nd electrode part 45b.The 2nd electrode part 45a, 45b is formed and the 1st electrode part 43 becomes one.
The the 1st and the 2nd internal electrode 31,41 contains electric conducting material.As contained electric conducting material in the 1st and the 2nd internal electrode 31,41,, preferably constitute by Pd or Ag-Pd alloy though be not particularly limited.The thickness of the 1st and the 2nd internal electrode 31,41 is, for example, and about 0.5～5 μ m.
The 1st outer electrode 25 and the 1st outer electrode 26 are configured on the 1st interarea 22, perpendicular to the stacked direction of variable resistance layer and be parallel to the position that has the interval of regulation on the direction of the 1st interarea 22.The 1st outer electrode 25,26 rectangular shapes (being square shape in the present embodiment).The 1st outer electrode 25,26 is set to, and for example, each length on one side is about 300 μ m, and thickness is about 5 μ m.
The 2nd outer electrode 27 and the 2nd outer electrode 28 are configured on the 2nd interarea 23, perpendicular to the stacked direction of variable resistance layer and be parallel to the position that has the interval of regulation on the direction of the 2nd interarea 23.The 2nd outer electrode 27,28 rectangular shapes (being square shape in the present embodiment).The 2nd outer electrode 27,28 is set to, and for example, each length on one side is about 300 μ m, and thickness is about 5 μ m.
Each outer electrode 25～28 has the 1st electrode layer 25a～28a and the 2nd electrode layer 25b～28b.The 1st electrode layer 25a, 26a are configured on the 1st interarea 22 of the plain body 21 of variable resistor, contain Pd.The 1st electrode layer 27a, 28a are configured on the 2nd interarea 23 of the plain body 21 of variable resistor, contain Pd.The 1st electrode layer 25a～28a is formed by the conductive paste sintering as described later.Conductive paste uses to have mixed the conductive paste of organic binder bond and organic solvent in the metal dust of Pd particle as main component.Metal dust also can be to be the metal dust of main component with Ag-Pd alloy particle.
The 2nd electrode layer 25b～28b is configured on the 1st electrode layer 25a～28a.The 2nd electrode layer 25b～28b is formed by print process or galvanoplastic.The 2nd electrode layer 25b～28b contains Au or Pt.When using print process, preparation has mixed the conductive paste of organic binder bond and organic solvent in the metal dust that with Au particle or Pt particle is main component, this conductive paste of printing forms the 2nd electrode layer 25b～28b by oven dry or sintering on the 1st electrode layer 25a～28a.When using galvanoplastic, Au or Pt evaporation are formed the 2nd electrode layer 25b～28b by vacuum plating method (vacuum vapour deposition, sputtering method, ion plating etc.).The 2nd electrode layer 25b～28b also can be used as the layered product of Pt/Au and constitutes.
The 1st electrode part 33 of the 1st internal electrode 31 and the 1st electrode part 43 of the 2nd internal electrode 41 as mentioned above, overlap each other between the 1st adjacent internal electrode 31 and the 2nd internal electrode 41.Therefore, bring into play function with the 1st electrode part 33 and the 1st electrode part 43 overlapping areas as the zone of performance variable resistance characteristics in the variable resistance layer.In laminate sheet-like variable resistance 11 with above-mentioned formation, by the 1st electrode part the 33, the 1st electrode part 43 and, in variable resistance layer with the 1st electrode part 33 and the 1st electrode part 43 overlapping areas, constitute a variable resistance part.
Then, has the manufacture process of the laminate sheet-like variable resistance 11 of above-mentioned formation with reference to Fig. 5 and Fig. 6 explanation.Fig. 5 is the flow chart that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 1st execution mode is relevant.Fig. 6 is the figure that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 1st execution mode is relevant.
At first, respectively with the ratio weighing of regulation constitute variable resistance layer main component ZnO and, the micro-additive of the metal of Pr, Co, Cr, Ca, Si, K and Al or oxide etc., mix each composition then and prepare variable-resistance material (step S101).Then, add organic binder bond, organic solvent, organic plasticizer etc. in this variable-resistance material, use ball mill etc. carries out the mixing pulverizing about 20 hours and obtains slurry.
With the known method of doctor-blade casting process etc. above-mentioned slurry is coated on the film of PETG system for example, carried out drying afterwards, form the film of the about 30 μ m of thickness.The film of gained is peeled off from film and obtained base sheet (green sheet) (step S103).
Then, on the base sheet, form a plurality of (corresponding to the numbers of cutting plate number described later) electrode part (step S105) corresponding to the 1st and the 2nd internal electrode 31,41.Corresponding to the electrode part of the 1st and the 2nd internal electrode 31,41, be by will mix with the Pd particle be the conductive paste of metal dust, organic binder bond and organic solvent of main component with the print process printing of silk screen printing etc., make it dry and form.
Then, be formed with each base sheet of electrode part with the sequential cascade of regulation and be not formed with electrode partly the base sheet and form sheet layered product (step S107).The sheet layered product of gained is cut to blade unit, a plurality of base substrate GL1 (with reference to Fig. 6) (step S109) that obtained cutting apart.Stack gradually among the base substrate GL1 of gained: be formed with base sheet GS1 corresponding to the electrode part EL1 of the 1st internal electrode 31; Be formed with base sheet GS2 corresponding to the electrode part EL2 of the 2nd internal electrode 41; Do not form the base sheet GS3 of electrode part EL1, EL2.Base sheet GS3 between base sheet GS1 and base sheet GS2 can be stacked many pieces, also can not have.
Then, on the outer surface of base substrate GL1, give the conductive paste (step S111) that conductive paste that the 1st electrode layer 25a～28a uses and the 2nd electrode layer 25b～28b use.Here, by in the mode that is connected in corresponding electrode part EL1, EL2 conductive paste is carried out drying after with the silk screen print method printing on the 1st interarea of base substrate GL1, formation is corresponding to the electrode part of the 1st electrode layer 25a, 26a.Then, by on corresponding to the electrode of the 1st electrode layer 25a, 26a part conductive paste being carried out drying after with the silk screen print method printing, formation is corresponding to the electrode part of the 2nd electrode layer 25b, 26b.In addition, by in the mode that is connected in corresponding electrode part EL1, EL2 conductive paste being carried out drying after with the silk screen print method printing on the 2nd interarea of base substrate GL1, form electrode part corresponding to the 1st electrode layer 27a, 28a.Then, by carrying out drying after with silk screen print method printing conductive paste on corresponding to the electrode of the 1st electrode layer 27a, 28a part, and formation is corresponding to the electrode part of the 2nd electrode layer 27b, 28b.
Conductive paste for the 1st electrode layer 25a～28a uses as mentioned above, can use the conductive paste that has mixed organic binder bond and organic solvent in the metal dust as main component with Ag-Pd alloy particle or Pd particle.Conductive paste for the 2nd electrode layer 25b～28b uses as mentioned above, can use the conductive paste that has mixed organic binder bond and organic solvent in the metal dust of Pt particle as main component.In addition, these conductive pastes do not contain glass dust.
Then, implement 180～400 ℃, about 0.5～24 hour heat treated to slough binding agent for the base substrate GL1 that has given conductive paste, further, carry out 1000～1400 ℃, about 0.5～8 hour sintering (step S113), obtain plain body the 21, the 1st electrode layer 25a～28a of variable resistor and the 2nd electrode layer 25b～28b.Become variable resistance layer by the base sheet GS1～GS3 among this sintering operation base substrate GL1.Electrode part EL1 becomes the 1st internal electrode 31.Electrode part EL2 becomes the 2nd internal electrode 41.
Can obtain laminate sheet-like variable resistance 11 by above process.In addition, also can behind sintering, make the diffusion into the surface of alkali metal (for example, Li, Na etc.) from the plain body 21 of variable resistor.
The formation of semiconductor light-emitting elements 1 then, is described with reference to Fig. 3 and Fig. 4.
Semiconductor light-emitting elements 1 is the light-emitting diode (LED:Light-Emitting Diode) of GaN (gallium nitride) based semiconductor, comprise substrate 2 and, the layer tectosome LS of configuration on this substrate 2.The semiconductor LED of GaN class is well-known, simplifies its explanation.Substrate 2 is optical clear of being made by sapphire and the substrate with electrical insulating property.That layer tectosome LS comprises is stacked, the semiconductor regions 5 of n type (the 1st conductivity type) semiconductor regions 3, luminescent layer 4 and p type (the 2nd conductivity type).Semiconductor light-emitting elements 1 is luminous according to putting on voltage between n N-type semiconductor N zone 3 and the p N-type semiconductor N zone 5.
N N-type semiconductor N zone 3 comprises the nitride-based semiconductor of n type and constitutes.In the present embodiment, n N-type semiconductor N zone 3 is that GaN is formed by epitaxial growth on substrate 2, has added n type dopant (for example, Si etc.) and has had n type conductivity.N N-type semiconductor N zone 3 also can have make its refractive index less than and make the composition of its band gap greater than luminescent layer 4.At this moment, the effect as the bottom overlay with respect to luminescent layer 4 is played in n N-type semiconductor N zone 3.
Luminescent layer 4 is formed on the n N-type semiconductor N zone 3.In luminescent layer 4, by the charge carrier (electronics and hole) supplied with by n N-type semiconductor N zone 3 and p N-type semiconductor N zone 5 again in conjunction with and in light-emitting zone, produce light.Luminescent layer 4 for example, can be made barrier layer and trap layer and replace stacked multiple quantum trap (MQW:Mutiple Quantum Well) structure on a plurality of cycles.At this moment, barrier layer and trap layer are made of InGaN, make the band gap of the band gap of barrier layer greater than the trap layer by the suitable composition of In (indium) of selecting.Light-emitting zone produces on the zone that is injected into charge carrier in luminescent layer 4.
P N-type semiconductor N zone 5 comprises the nitride-based semiconductor of p type and constitutes.In the present embodiment, p N-type semiconductor N zone 5 is that AlGaN is formed by epitaxial growth on luminescent layer 4, has added p type dopant (for example, Mg etc.) and has had p type conductivity.P N-type semiconductor N zone 5 also can have make its refractive index less than and make the composition of its band gap greater than luminescent layer 4.At this moment, the effect as the top overlay with respect to luminescent layer 4 is played in p N-type semiconductor N zone 5.
On n N-type semiconductor N zone 3, be formed with cathode electrode 6.Cathode electrode 6 is made of conductive material, and has realized that ohmic properties contacts between the n N-type semiconductor N zone 3.On p N-type semiconductor N zone 5, be formed with anode electrode 7.Anode electrode 7 is made of conductive material, and has realized that ohmic properties contacts between the p N-type semiconductor N zone 5.On cathode electrode 6 and anode electrode 7, be formed with projected electrode (bump electrode) 8.
In the semiconductor light-emitting elements 1 of above-mentioned formation, when flowing through electric current, in the light-emitting zone of luminescent layer 4, produce luminous when between anode electrode 7 (projected electrode 8) and cathode electrode 6 (projected electrode 8), applying the voltage of regulation.
Semiconductor light-emitting elements 1 projection is connected in a pair of the 2nd outer electrode 27,28.That is, cathode electrode 6 is electrically connected and is mechanically connected to the 2nd outer electrode 28 by projected electrode 8.Anode electrode 7 is electrically connected and is mechanically connected to the 2nd outer electrode 27 by projected electrode 8.Thus, be connected in parallel in semiconductor light-emitting elements 1 by the 1st electrode part the 33, the 1st electrode part 43 and the variable resistance part that constitutes with the 1st electrode part 33,43 overlapping areas in variable resistance layer.
As mentioned above, according to this 1st execution mode, because laminate sheet-like variable resistance 11 is connected in parallel in semiconductor light-emitting elements 1, so, can prevent the ESD fluctuation of semiconductor light-emitting elements 1.
In this 1st execution mode, laminate sheet-like variable resistance 11 has the 2nd outer electrode 27,28 that is connected in semiconductor light-emitting elements 1 and the 1st and the 2nd internal electrode 31,41 that is connected in the 2nd outer electrode 27,28.Thus, the heat that produces in semiconductor light-emitting elements 1 is mainly along the 2nd outer electrode 27,28 and 31,41 diffusions of the 1st and the 2nd internal electrode.The heat radiation approach of the heat that produces in the semiconductor light-emitting elements 1 obtains enlarging, and can spread the heat that produces in the semiconductor light-emitting elements 1 effectively.
In this 1st execution mode, variable resistance layer is main component with ZnO.ZnO has the pyroconductivity with equal degree such as the aluminium oxide that usually uses as the heat release substrate, has better pyroconductivity.Therefore, can suppress the generation of situation about being hindered by variable resistance layer from the thermal diffusion of the 1st and the 2nd internal electrode 31,41.
In addition, in the laminate sheet-like variable resistance 11 of the 1st execution mode, be configured on the 1st interarea 22 of the plain body 21 of variable resistor as the 1st outer electrode 25 of input terminal electrode performance function with as the 1st outer electrode 26 of output terminal electrode performance function.That is, laminate sheet-like variable resistance 11 is by the laminate sheet-like variable resistance of BGA (Ball Grid Array) packing.This laminate sheet-like variable resistance 11 is electrically connected and mechanical connection with each the 1st outer electrode 25,26 with corresponding to the terminal pad of this each the 1st outer electrode 25,26 by using soldered ball or projected electrode etc., and is installed on external substrate and the external mechanical etc.
According to the 1st execution mode, contain the base substrate GL1 that Pd, sintering give this conductive paste and obtain the plain body 21 of variable resistor and the 1st electrode layer 25a～28a owing to base substrate GL1 contains conductive paste that Pr, the 1st electrode layer 25a～28a use, so the plain body 21 of variable resistor and the 1st electrode layer 25a～28a are by the while sintering.Thus, can improve plain body 21 of variable resistor and the 1st and the 2nd electrode layer 25～28 (adhesion strength of the 1st electrode layer 25a～28a).
Improve plain body 21 of variable resistor and the 1st and the 2nd electrode layer 25～28 (effect of the adhesion strength of the 1st electrode layer 25a～28a), the following phenomenon that takes place when being considered to result from sintering.When sintered body GL1 and conductive paste, among the base substrate GL1 contained Pr move to base substrate GL1 near surface, be the near interface of base substrate GL1 and conductive paste.So the Pr that moves to the near interface of base substrate GL1 and conductive paste spreads mutually with contained Pd in conductive paste.At Pr and Pd mutually during counterdiffusion, can formation Pr and oxide (for example, the Pr of Pd at the near interface (also comprising the interface) of the plain body 21 of variable resistor and the 1st electrode layer 25a～28a 2Pd 2O 5Or Pr 4PdO 7Deng).Oxide by this Pr and Pd produces fixed effect, has improved by the adhesion strength of the plain body 21 of the variable resistor of sintering gained with outer electrode 25～28.
By the laminate sheet-like variable resistance that BGA packs, its area of external electrodes as input and output termination electrode or earth terminal electrode performance function is especially little.Therefore, the adhesion strength step-down of the plain body of variable resistor and outer electrode, the danger that exists outer electrode to peel off from variable resistor element body.But, in the laminate sheet-like variable resistance 11 of the 1st execution mode, because as mentioned above, (adhesion strength of the 1st electrode layer 25a～28a) is improved for plain body 21 of variable resistor and the 1st and the 2nd electrode layer 25～28, so the 1st and the 2nd outer electrode 25～28 can not peeled off from the plain body 21 of variable resistor.
The conductive paste that is used to form the 1st electrode layer 25a～28a contains under the situation of glass dust, and when sintering, glass ingredient can be separated out on the surface of the 1st electrode layer 25a～28a, has the danger of plating property or attached weldering deterioration.But, in this 1st execution mode, do not contain glass dust, so the situation of plating property or attached weldering deterioration that do not have takes place owing to be used to form the conductive paste of the 1st electrode layer 25a～28a.
In this 1st execution mode, a pair of the 1st outer electrode 25,26 is configured on the 1st interarea 22 of the plain body 21 of variable resistor, and a pair of the 2nd outer electrode 27,28 is configured on the 2nd interarea 23.The the 1st and the 2nd internal electrode 31,41 contains the 1st electrode part 33,43 that overlaps each other, and, the 2nd electrode part 35a, 35b, 45a, the 45b that draw from the 1st electrode part 33,43 in the mode of on an interarea 22 and another interarea 23, exposing.The the 1st and the 2nd outer electrode 25～28 is electrically connected on corresponding internal electrode 31,41 by the 2nd electrode part 35a, 35b, 45a, 45b.At this moment, semiconductor light-emitting elements 1 is installed on the laminate sheet-like variable resistance 11 by being connected in the 2nd outer electrode 27,28.Therefore, can be easily and be used to be electrically connected installation with mechanical connection semiconductor light-emitting elements 1 and the 2nd outer electrode 27,28 easily.Laminate sheet-like variable resistance 11 in opposite directions in the state of external substrate or external mechanical etc., is installed in external substrate or external mechanical etc. with the 1st interarea 22.Therefore, the installation of laminate sheet-like variable resistance 11 also can be carried out easily and easily.
In this 1st execution mode, be connected in a pair of the 2nd outer electrode 27,28 by projection, semiconductor light-emitting elements 1 is configured on the laminate sheet-like variable resistance 11.Thus, can carry out the installation of semiconductor light-emitting elements 1 as easy as rolling off a log and easily to laminate sheet-like variable resistance 11.
In addition, in this 1st execution mode, the 1st interarea 22 and the 2nd interarea 23 the stacked direction that is parallel to the plain body 21 of variable resistor, can the power transformation resistance layer the direction of stacked direction on extend.Thus, the 1st and the 2nd internal electrode 31,41 is attached on the direction of the 1st interarea 22 and 23 extensions of the 2nd interarea.Its result, for each internal electrode 31,41, from the heat release approach of this each internal electrode the 31,41 to the 1st interarea 22 and the 2nd interarea 23, promptly the heat radiation approach to the outer surface of laminate sheet-like variable resistance 11 shortens, can more effectively carry out from the diffusion of the heat of the 1st and the 2nd internal electrode 31,41.
(the 2nd execution mode)
The formation of the light-emitting device LE2 that the 2nd execution mode is relevant is described with reference to Fig. 7.Fig. 7 is the figure that is used to illustrate that the section of the light-emitting device that the 2nd execution mode is relevant constitutes.The difference of the light-emitting device LE1 that the light-emitting device LE2 that the 2nd execution mode is relevant is relevant with the 1st execution mode is, the formation of relevant laminate sheet-like variable resistance.
Light-emitting device LE2 as shown in Figure 7, comprises semiconductor light-emitting elements 1 and laminate sheet-like variable resistance 51.Semiconductor light-emitting elements 1 is configured on the laminate sheet-like variable resistance 51.Laminate sheet-like variable resistance 51 comprises layered product 53 and pair of external electrodes 55,56.Pair of external electrodes 55,56 is configured in respectively on the outer surface of layered product 53.The function of outer electrode 55 is the input terminal electrodes as laminate sheet-like variable resistance 51, and the function of outer electrode 56 is the output terminal electrodes as laminate sheet-like variable resistance 51.
Layered product 53 has variable resistance part 57 and clips the pair of outer layer portion 59 of this variable resistance part 57 ground configuration.Layered product 53 is stacked and constitute by variable resistance part 57 and pair of outer layer portion 59.Layered product 53 is rectangular shape.Layered product 53 comprises a pair of end face (outer surface) 53a, 53b and a pair of side (outer surface) 53c, 53d.A pair of end face 53a, 53b extend on the direction of the stacked direction that is parallel to this layered product 53 mutually in opposite directions simultaneously.A pair of side 53c, 53d are mutually in opposite directions, and be simultaneously adjacent with a pair of end face 53a, 53b.A pair of side 53c, 53d are perpendicular to the stacked direction of layered product 53.
Variable resistance part 57 comprises variable resistance layer 61 that shows variable resistance characteristics and a plurality of internal electrodes 63,64 that dispose in the mode that clips this variable resistance layer 61.In variable resistance part 57, variable resistance layer 61 and internal electrode 63,64 are by alternately stacked.Adjacent pair of internal electrodes 63,64 overlapping areas in the variable resistance layer 61 are brought into play function as the zone that shows variable resistance characteristics respectively.The thickness of internal electrode 63,64 for example is about 0.5～5 μ m.In the laminate sheet-like variable resistance 51 of reality, the border that variable resistance layer is 61 and, the border of 59 in variable resistance layer 61 and outer portion by one turn to can not visual identification degree.
Variable resistance layer 61 contains ZnO as main component, contains the metal simple-substance of thulium, Co, IIIb family element (B, Al, Ga, In), Si, Cr, Mo, alkali metal (K, Rb, Cs) and alkali earth metal (Mg, Ca, Sr, Ba) etc. or its oxide simultaneously as accessory ingredient.In the present embodiment, variable resistance layer contains Pr, Co, Cr, Ca, Si, K, Al etc. as accessory ingredient.Thus, pair of internal electrodes 63,64 overlapping areas adjacent each other are main component with ZnO, contain Pr simultaneously.Same with the 1st execution mode in the present embodiment, use Pr as rare earth metal.
A plurality of internal electrodes 63,64 are provided with the mode almost parallel ground that an end alternately exposes on each end face 53a, 53b respectively.Each internal electrode 63,64 contains electric conducting material.As contained electric conducting material in each internal electrode 63,64, though be not particularly limited the preferred electric conducting material that constitutes by Pd or Ag-Pd alloy.A plurality of internal electrodes 63,64 are along the stacked direction of layered product 53, promptly set up along the relative direction of a pair of side 53c, 53d.
Skin portion 59 is same with variable resistance layer 61, contain ZnO as main component, contain the metal simple-substance of thulium, Co, IIIb family element (B, Al, Ga, In), Si, Cr, Mo, alkali metal (K, Rb, Cs) and alkali earth metal (Mg, Ca, Sr, Ba) etc. or its oxide simultaneously as accessory ingredient.In the present embodiment, Pr, Co, Cr, Ca, Si, K, Al etc. are contained as contained accessory ingredient in outer portion 59 in outer portion 59.Use Pr as rare earth metal in the present embodiment.
Pair of external electrodes 55,56 is provided with in the mode at the both ends of overlaminate body 53 respectively.Pair of external electrodes 55,56 comprises the 1st electrode part 55a, 56a respectively, the 2nd electrode part 55b, 56b, and the 3rd electrode part 55c, 56c.The 1st electrode part 55a is configured on the end face 53a.The 1st electrode part 56a is configured on the end face 53b.The 2nd electrode part 55b is to be configured on the 53c of side with the continuous mode of the 1st electrode part 55a.The 2nd electrode part 56b is to be configured on the 53c of side with the continuous mode of the 1st electrode part 56a.The 3rd electrode part 55c is to be configured on the 53d of side with the continuous mode of the 1st electrode part 55a.The 3rd electrode part 56c is to be configured on the 53d of side with the continuous mode of the 1st electrode part 56a.
An end that is exposed to end face 53a of internal electrode 63 is electrically connected and mechanical connection with the 1st electrode part 55a of outer electrode 55.An end that is exposed to end face 53b of internal electrode 64 is electrically connected and mechanical connection with the 1st electrode part 56a of outer electrode 56.
Outer electrode 55,56 contains pd.Outer electrode 55,56 is sintered by conductive paste and forms.For conductive paste, use the conductive paste that in the Ag-metal dust of Pd alloy particle, has mixed organic binder bond and organic solvent as main component.Metal dust can be a main component with the Pd particle also.Outer electrode 55,56 and the 1st execution mode are same, by obtaining with 53 while of layered product sintering.Externally also can form metal level on the surface of electrode 55,56 in the mode that covers this outer electrode 55,56.Material as this metal level can use Au, Pt, Sn, Sn alloy or Ag etc.Metal level can be by formation such as galvanoplastic.
Semiconductor light-emitting elements 1 is configured on the side 53c perpendicular to the stacked direction of layered product 53 (variable resistance layer 61), and projection is connected in pair of external electrodes 55,56.That is, cathode electrode 6 is electrically connected and is mechanically connected to outer electrode 56 by projected electrode 8.Anode electrode 7 is electrically connected and is mechanically connected to outer electrode 55 by projected electrode 8.
As mentioned above, according to this 2nd execution mode, because laminate sheet-like variable resistance 51 is connected in parallel in semiconductor light-emitting elements 1, so, can prevent the ESD fluctuation of semiconductor light-emitting elements 1.
In this 2nd execution mode, laminate sheet-like variable resistance 11 has outer electrode 55,56 that is connected in semiconductor light-emitting elements 1 and the internal electrode 63,64 that is connected in this outer electrode 55,56.Thus, the heat that produces in semiconductor light-emitting elements 1 is mainly along outer electrode 55,56 and internal electrode 63,64 diffusions.The heat radiation approach of the heat that produces in semiconductor light-emitting elements 1 obtains enlarging, and can effectively be diffused in the heat that produces in the semiconductor light-emitting elements 1.
In this 2nd execution mode, variable resistance layer 61 is a main component with ZnO.ZnO has the pyroconductivity with equal degree such as the aluminium oxide that usually uses as the heat release substrate, has better pyroconductivity.Therefore, the generation of the diffusion that can suppress the heat of electrode 63,64 internally situation about being hindered by variable resistance layer 61.
According to the 2nd execution mode and since with the 1st execution mode similarly layered product 53 and outer electrode 55,56 obtain by the while sintering, so, can improve the adhesion strength of layered product 53 and outer electrode 55,56.
(the 3rd execution mode)
The formation of the light-emitting device LE3 that the 3rd execution mode is relevant is described with reference to Fig. 8 and Fig. 9.Fig. 8 is the figure that is used to illustrate that the section of the light-emitting device that the 3rd execution mode is relevant constitutes.Fig. 9 is used for illustrating the figure that constitutes along the section of the IX-IX line of Fig. 8.The difference of the light-emitting device LE1 that the light-emitting device LE3 that the 3rd execution mode is relevant is relevant with the 1st execution mode is, the formation of relevant laminate sheet-like variable resistance.
Light-emitting device LE3 as Fig. 8 and shown in Figure 9, comprises semiconductor light-emitting elements 1 and laminate sheet-like variable resistance 71.Semiconductor light-emitting elements 1 is configured on the laminate sheet-like variable resistance 71.
The laminate sheet-like variable resistance 51 of laminate sheet-like variable resistance 71 and the 2nd execution mode is same, comprises layered product 53 and pair of external electrodes 55,56.In laminate sheet-like variable resistance 71, a plurality of internal electrodes 63,64 are set up along the stacked direction (relative direction of a pair of side 53c, 53d) of layered product 53 (variable resistance layer 61).That is, a plurality of internal electrodes 63,64 are set up along the direction perpendicular to the relative direction of a pair of end face 53a, 53b.Layered product 53 comprises a pair of side (outer surface) 53e, 53f.A pair of end face 53e, 53f are mutually in opposite directions, and be simultaneously adjacent with a pair of end face 53a, 53b.A pair of side 53e, 53f extend on the direction of the stacked direction that is parallel to layered product 53.
The 1st electrode part 55a of outer electrode 55 is configured on the end face 53a.The 1st electrode part 56a of outer electrode 56 is configured on the end face 53b.The 2nd electrode part 55b, 56b are to be configured on the 53e of side with the continuous mode of corresponding the 1st electrode part 55a, 56a.The 3rd electrode part 55c, 56c are to be configured on the 53f of side with the continuous mode of the 1st electrode part 55a, 56a.Semiconductor light-emitting elements 1 be configured in the stacked direction of the layered product 53 that is parallel in the laminate sheet-like variable resistance 71 upwardly extending of side, be on the side 53e of layered product 53.
In this 3rd execution mode, because laminate sheet-like variable resistance 71 is connected in parallel in semiconductor light-emitting elements 1, so, can prevent the ESD fluctuation of semiconductor light-emitting elements 1.
In this 3rd execution mode, same with the 2nd execution mode, laminate sheet-like variable resistance 11 has outer electrode 55,56 that is connected in semiconductor light-emitting elements 1 and the internal electrode 63,64 that is connected in this outer electrode 55,56.Thus, the heat that produces in semiconductor light-emitting elements 1 is mainly along outer electrode 55,56 and internal electrode 63,64 diffusions.The heat radiation approach of the heat that produces in semiconductor light-emitting elements 1 obtains enlarging, and can effectively be diffused in the heat that produces in the semiconductor light-emitting elements 1.Because variable resistance layer 61 is a main component with ZnO, so, the generation of the situation that the diffusion that can suppress the heat of electrode 63,64 is internally hindered by variable resistance layer 61.
In this 3rd execution mode, semiconductor light-emitting elements 1 disposes in the mode relative with side 53e.A plurality of internal electrodes 63,64 are set up along the direction that side 53e extends.Thus, for each internal electrode 63,64, the heat release approach from this each internal electrode 63,64 to the outer surface of laminate sheet-like variable resistance 71 shortens, and can more effectively carry out the diffusion of the heat of electrode 63,64 internally.
In this 3rd execution mode, pair of external electrodes 55,56 is included in the 1st electrode part 55a, the 56a of the last configuration of a pair of end face 53a, 53b and the 2nd electrode part 55b, the 56b that disposes respectively on the 53e of side.At this moment, semiconductor light-emitting elements 1 is installed on the laminate sheet-like variable resistance 71 in the mode that is connected in the 2nd electrode part 55b, 56b.Therefore, can be easily and be used to be electrically connected the installation of semiconductor light-emitting elements 1 and outer electrode 55,56 easily.
(the 4th execution mode)
The formation of the light-emitting device LE4 that the 4th execution mode is relevant is described with reference to Figure 10～Figure 15.Figure 10 is the approximate vertical view of the relevant light-emitting device of expression the 4th execution mode.Figure 11 is the summary upward view of the relevant light-emitting device of expression the 4th execution mode.Figure 12 is the figure that is used for illustrating the section formation of the XII-XII line along Figure 10.Figure 13 is the figure that is used for illustrating the section formation of the XIII-XIII line along Figure 10.Figure 14 is the figure that is used for illustrating the section formation of the XIV-XIV line along Figure 10.Figure 15 is the figure that is used for illustrating the section formation of the XV-XV line along Figure 10.
Light-emitting device LE4 as Figure 10～shown in Figure 13, comprises a plurality of (being 4 in the present embodiment) semiconductor light-emitting elements 1 and laminate sheet-like variable resistance 81.Each semiconductor light-emitting elements 1 is configured on the laminate sheet-like variable resistance 81.
The formation of laminate sheet-like variable resistance 81 at first, is described.Laminate sheet-like variable resistance 81, as Figure 10～shown in Figure 14, comprise and make the tabular variable resistor of essentially rectangular plain body 91, a plurality of (being 8 in the present embodiment) the 1st outer electrode 25,26 and a plurality of (being 8 in the present embodiment) the 2nd outer electrode 27,28.Each the 1st outer electrode 25,26 is configured on the 1st interarea (outer surface) 22 of the plain body 91 of variable resistor.Each the 2nd outer electrode 27,28 is configured on the 2nd interarea (outer surface) 23 of the plain body 91 of variable resistor.The plain body 91 of variable resistor is set to, and for example, is about 2.0mm, wide about 1.0mm, thick about 0.3mm.The function of the 1st outer electrode 25 is the input terminal electrodes as laminate sheet-like variable resistance 81, and the function of the 1st outer electrode 26 is the output terminal electrodes as laminate sheet-like variable resistance 81.The function of the 2nd outer electrode 27,28 is as the flat tip electrode that is electrically connected on semiconductor light-emitting elements 1 described later.
The plain body 91 of variable resistor is constructed and is that layered product, this layered product are laminated with a plurality of variable resistance layers and a plurality of the 1st internal electrode 30 and the 2nd internal electrode 40 of performance variable resistance characteristics.As an internal electrode group, this internal electrode group stacked direction along variable resistance layer in the plain body 91 of variable resistor disposes a plurality of (being 2 in the present embodiment) with each one deck the 1st internal electrode 30 and the 2nd internal electrode 40.In each internal electrode group, the 1st internal electrode 30 and the 2nd internal electrode 40, to clip the mode of one deck variable resistance layer at least between mutually, the 1st internal electrode 30 and the 2nd internal electrode 40 are alternately being disposed.Each internal electrode group has at least to be situated between between mutually, and the mode of one deck variable resistance layer is disposing.In the laminate sheet-like variable resistance 81 of reality, the degree that the border between a plurality of variable resistance layers are turned to mutually by one can not visual identification.
Variable resistance layer contains ZnO (zinc oxide) as main component, contains the metal simple-substance of thulium, Co, IIIb family element (B, Al, Ga, In), Si, Cr, Mo, alkali metal (K, Rb, Cs) and alkali earth metal (Mg, Ca, Sr, Ba) etc. or its oxide simultaneously as accessory ingredient.In the present embodiment, variable resistance layer contains Pr, Co, Cr, Ca, Si, K, Al etc. as accessory ingredient.Thus, in variable resistance layer with the 1st internal electrode 30 and the 2nd internal electrode 40 overlapping areas be main component with ZnO, contain Pr simultaneously.
Use Pr as rare earth metal in the present embodiment.Pr becomes the material that is used to show variable resistance characteristics.The reason of using Pr is owing to the voltage non linear excellence, and in addition, the characteristics fluctuation when producing in batches is few.The amount of ZnO in the variable resistance layer though be not particularly limited, when being 100 quality % with all materials that constitute variable resistance layer, is generally 99.8～69.0 quality %.The thickness of variable resistance layer is, for example, and about 5～60 μ m.
Each the 1st interior electrode layer 30 as shown in figure 12, comprises a plurality of (being 2 in the present embodiment) the 1st internal electrode 31.Each the 1st internal electrode 31 is configured in the side from being parallel to stacked direction in the plain body 91 of variable resistor to begin to have on the position at interval of regulation.The interval that mutual electric insulation ground has regulation between the 1st internal electrode 31.
Each the 1st internal electrode 31 comprises the 1st electrode part 33 and the 2nd electrode part 35a, 35b.From stacked direction, the 1st electrode part 33 overlaps each other with the 1st electrode part 43 of the 2nd internal electrode 41 described later.The 1st electrode part 33 is shape in the form of a substantially rectangular.The 2nd electrode part 35a as shown in figure 14, draws from the 1st electrode part 33 in the mode of exposing on the 1st interarea 22, and performance is as the function of conductor introduction.The 2nd electrode part 35a physical connection and be electrically connected on the 1st outer electrode 25.
The 2nd electrode part 35b as shown in figure 14, draws from the 1st electrode part 33 in the mode of exposing on the 2nd interarea 23, and performance is as the function of conductor introduction.The 2nd electrode part 35b physical connection and be electrically connected on the 2nd outer electrode 27.The 1st electrode part 33 is electrically connected on the 1st outer electrode 25 by the 2nd electrode part 35a, is electrically connected on the 2nd outer electrode 27 by the 2nd electrode part 35b simultaneously.The 2nd electrode part 35a, 35b is formed and the 1st electrode part 33 becomes one.
Each the 2nd interior electrode layer 40 also as shown in figure 13, comprises a plurality of (being 2 in the present embodiment) the 2nd internal electrode 41 respectively.Each the 2nd internal electrode 41 is configured in the side from being parallel to stacked direction in the plain body 91 of variable resistor to begin to have on the position at interval of regulation.The interval that mutual electric insulation ground has regulation between the 2nd internal electrode 41.Each the 2nd internal electrode 41 as shown in figure 16, also can be formed one, makes it constitute an internal electrode.At this moment, also an outer electrode 26 can be set on each above-mentioned internal electrode.
Each the 2nd internal electrode 41 comprises the 1st electrode part 43 and the 2nd electrode part 45a, 45b.From stacked direction, the 1st electrode part 33 of the 1st electrode part 43 and the 1st internal electrode 31 overlaps each other.The 1st electrode part 43 is shape in the form of a substantially rectangular.The 2nd electrode part 45a as shown in figure 15, draws from the 1st electrode part 43 in the mode of exposing on the 1st interarea 22, and performance is as the function of conductor introduction.The 2nd electrode part 45a physical connection and be electrically connected on the 1st outer electrode 26.
The 2nd electrode part 45b as shown in figure 15, draws from the 1st electrode part 43 in the mode of exposing on the 2nd interarea 23, and performance is as the function of conductor introduction.The 2nd electrode part 45b physical connection and be electrically connected on the 2nd outer electrode 28.The 1st electrode part 43 is electrically connected on the 1st outer electrode 26 by the 2nd electrode part 45a, is electrically connected on the 2nd outer electrode 28 by the 2nd electrode part 45b simultaneously.The 2nd electrode part 45a, 45b is formed and the 1st electrode part 43 becomes one.
The 1st outer electrode 25,26 is arranged in 2 dimensions of the capable N row of M (parameter M and N are respectively the integer more than 2) and arranges on the 1st interarea 22.In the present embodiment, the 1st outer electrode 25,26 is aligned to 2 dimension arrangements of 4 row, 2 row.The 1st outer electrode 25 and the 1st outer electrode 26 are configured on the 1st interarea 22, perpendicular to the stacked direction of variable resistance layer and be parallel to the interval that has regulation on the direction of the 1st interarea 22.The 1st outer electrode 25,26 rectangular shapes (being square shape in the present embodiment).The 1st outer electrode 25,26 is set to, and for example, each length on one side is about 300 μ m, and thickness is about 5 μ m.
The 2nd outer electrode 27,28 is aligned to 2 dimensions of the capable N row of M (parameter M and N are respectively the integer more than 2) and arranges on the 2nd interarea 23.In the present embodiment, the 2nd outer electrode 27,28 is arranged in 4 row, 2 row by 2 dimensions.The 2nd outer electrode 27 and the 2nd outer electrode 28 are configured on the 2nd interarea 23, perpendicular to the stacked direction of variable resistance layer and be parallel to the interval that has regulation on the direction of the 2nd interarea 23.The 2nd outer electrode 27,28 rectangular shapes (being square shape in the present embodiment).The 2nd outer electrode 27,28 is set to, and for example, each length on one side is about 300 μ m, and thickness is about 5 μ m.
Each outer electrode 25～28 has the 1st electrode layer 25a～28a and the 2nd electrode layer 25b～28b.The 1st electrode layer 25a～28a is configured on the outer surface (the 1st interarea 22 or the 2nd interarea 23) of the plain body 91 of variable resistor, contains Pd.The 1st electrode layer 25a～28a and the 1st execution mode are same, are formed by the conductive paste sintering.
The 2nd electrode layer 25b～28b is configured on the 1st electrode layer 25a～28a.The 2nd electrode layer 25b～28b and the 1st execution mode are same, are formed by print process or galvanoplastic.The 2nd electrode layer 25b～28b is made of Au or Pt.
The 1st electrode part 33 of the 1st internal electrode 31 and the 1st electrode part 43 of the 2nd internal electrode 41 as mentioned above, overlap each other between the 1st adjacent internal electrode 31 and the 2nd internal electrode 41.Therefore, bring into play function with the 1st electrode part 33 and the 1st electrode part 43 overlapping areas as the zone of performance variable resistance characteristics in the variable resistance layer.In laminate sheet-like variable resistance 81, by the 1st electrode part the 33, the 1st electrode part 43 and in variable resistance layer, constitute a variable resistance part with the 1st electrode part 33 and the 1st electrode part 43 overlapping areas with above-mentioned formation.
By the 1st electrode part 33,43 and the variable resistance part that constitutes with the 1st electrode part 33,43 overlapping areas in variable resistance layer, along the stacked direction configuration a plurality of (being 2 in the present embodiment) of variable resistance layer.By the 1st electrode part 33,43 and the variable resistance part that constitutes with the 1st electrode part 33,43 overlapping areas in variable resistance layer, along the direction configuration a plurality of (being 2 in the present embodiment) that is parallel to variable resistance layer.
The a pair of interarea 22,23 of variable resistor element 91 relative to each other.A pair of interarea 22,23 extends on the parallel direction of the direction that is configured with above-mentioned variable resistance part.That is, a pair of interarea 22,23 extends on the direction of the stacked direction that is parallel to variable resistance layer.In addition, a pair of interarea 22,23 is to extend abreast with respect to the direction that is parallel to variable resistance layer.The plain body 91 of variable resistor is aforesaid the tabular of a pair of interarea 22,23 that have.The interval of a pair of interarea 22,23 is set to, the direction that is configured less than the variable resistance part in the plain body 21 of variable resistor, that is, and at the stacked direction of variable resistance layer and be parallel to length on the direction of variable resistance layer.The interval of a pair of interarea 22,23 is equivalent to the thickness of the plain body 91 of variable resistor.
Then, has the manufacture process of the laminate sheet-like variable resistance 81 of above-mentioned formation with reference to Fig. 5 and Figure 17 explanation.Figure 17 is the figure that is used to illustrate the manufacture process of the laminate sheet-like variable resistance that the 4th execution mode is relevant.The manufacture process of the manufacture process of laminate sheet-like variable resistance 81 and above-mentioned laminate sheet-like variable resistance 11 is same, simplified illustration.
At first, adjust variable-resistance material (step S101), add organic binder bond, organic solvent, organic plasticizer etc. in this variable-resistance material, use ball mill etc. carries out the mixing pulverizing about 20 hours and obtains slurry.Then, obtain base sheet (green sheet) (step S103) by this slurry.
Then, on the base sheet, form a plurality of (corresponding to the numbers of cutting plate number described later) electrode part (step S105) corresponding to the 1st internal electrode 31.Similarly, on different base sheets, form a plurality of (corresponding to the numbers of cutting plate number described later) electrode part (step S105) corresponding to the 2nd internal electrode 41.
Then, overlap to form each base sheet of electrode part with the order of regulation and be not formed with the base sheet of electrode part and form sheet layered product (step S107).The sheet layered product of such gained is cut to blade unit, a plurality of base substrate GL1 (with reference to Figure 17) (step S109) that obtained being cut apart.
Then, on the outer surface of base substrate GL1, give the conductive paste (step S111) that conductive paste that the 1st electrode layer 25a～28a uses and the 2nd electrode layer 25b～28b use.
Then, the base substrate GL1 that has given conductive paste is implemented 180～400 ℃, about 0.5～24 hour heat treated with after sloughing binding agent, further carry out 1000～1400 ℃, about 0.5～8 hour sintering (step S113), obtain plain body the 91, the 1st electrode layer 25a～28a of variable resistor and the 2nd electrode layer 25b～28b.
Can obtain laminate sheet-like variable resistance 81 by above process.In addition, behind sintering, also can make the diffusion into the surface of alkali metal (for example, Li, Na etc.) from the plain body 91 of variable resistor.
Each semiconductor light-emitting elements 1, shown in Figure 12～15, projection is connected in corresponding a pair of the 2nd outer electrode 27,28.Thus, by the 1st electrode part 33,43 and the variable resistance part that constitutes with the 1st electrode part 33,43 overlapping areas in variable resistance layer, be connected in parallel in semiconductor light-emitting elements 1.
As mentioned above, according to the 4th execution mode, because each variable resistance part is connected in parallel in the semiconductor light-emitting elements 1 corresponding to this each variable resistance part, so, can prevent the ESD fluctuation of each semiconductor light-emitting elements 1.
In the 4th execution mode, the plain body 91 of variable resistor comprises a plurality of variable resistance parts, and simultaneously, a plurality of the 1st outer electrodes 25,26 are configured on the 1st interarea 22.A plurality of the 1st outer electrodes 25,26 are electrically connected on corresponding internal electrode 31,41 by the 2nd electrode part 35a, 45a.Thereby by light-emitting device LE4 (laminate sheet-like variable resistance 81) is installed with the 1st interarea 22 and the installed surface state in opposite directions of external substrate or external mechanical etc., a plurality of variable resistance parts are mounted in the mode with respect to external substrate or external mechanical etc.Its result can dwindle erection space when a plurality of variable resistance part is installed.Can reduce the installation cost that is used to install a plurality of variable resistance parts, can easily install.
In addition, in the laminate sheet-like variable resistance 81 of the 4th execution mode,, be configured in jointly on the 1st interarea 22 of the plain body 91 of variable resistor as the 1st outer electrode 25 of input terminal electrode performance function with as the outer electrode 26 of the 1st output terminal electrode performance function.That is, laminate sheet-like variable resistance 81 is by the laminate sheet-like variable resistance of BGA (Ball Grid Array) packing.This laminate sheet-like variable resistance 81 is electrically connected and mechanical connection with each outer electrode 25,26 with corresponding to the terminal pad of this each the 1st outer electrode 25,26 by using soldered ball or projected electrode etc., is installed on external substrate or the external mechanical etc.
In the 4th execution mode, a plurality of the 2nd outer electrodes 27,28 are configured on the 2nd interarea 23.A plurality of the 2nd outer electrodes 27,28 are electrically connected on corresponding internal electrode 31,41 by the 2nd electrode part 35b, 45b.Its result can easily install a plurality of semiconductor light-emitting elements 1 in the mode of utilizing the 2nd interarea 23 to be connected in parallel in variable resistance part.
In the 4th execution mode, same with the 1st execution mode, the heat that produces in the semiconductor light-emitting elements 1 is mainly along the 2nd outer electrode 27,28 and 31,41 diffusions of the 1st and the 2nd internal electrode.Thus, the heat radiation approach of the heat that produces in the semiconductor light-emitting elements 1 is enlarged, and can spread the heat that produces in the semiconductor light-emitting elements 1 effectively.
In the 4th execution mode, same with the 1st execution mode, the 1st interarea 22 of plain body 91 and the heat radiation approach of the 2nd interarea 23 from each internal electrode 31,41 to variable resistor promptly, arrive the heat radiation approach weak point of the outer surface of laminate sheet-like variable resistance 81.Thus, can more effectively carry out diffusion by the heat of the 1st and the 2nd internal electrode 31,41.
In the 4th execution mode, same with the 1st execution mode, thus, can improve plain body 91 of variable resistor and the 1st and the 2nd outer electrode 25～28 (adhesion strength of the 1st electrode layer 25a～28a).
In the 4th execution mode, the plain body 91 of variable resistor is have a pair of interarea 22,23 roughly tabular, and the interval of a pair of interarea 22,23 is set to, the length on the direction that is configured less than the variable resistance part in the plain body 91 of variable resistor.Thus, can reach laminate sheet-like variable resistance 81 purpose of thinness, the slimming of light-emitting device LE4 also becomes possibility.
In the 4th execution mode, same with the 1st execution mode, each semiconductor light-emitting elements 1 is connected in the 2nd corresponding outer electrode 27,28 by projection and is installed on the laminate sheet-like variable resistance 81.Its result can carry out the installation of each semiconductor light-emitting elements 1 to laminate sheet-like variable resistance 81 as easy as rolling off a log and easily.
In the relevant laminate sheet-like variable resistance 11,51,71,81 of the 1st～the 4th execution mode, the plain body 21,53,91 of variable resistor (variable resistance layer) does not contain Bi.The plain body 21,53,91 of variable resistor does not contain the reasons are as follows of Bi.When being main component with ZnO, the plain body of variable resistor also contains Bi, outer electrode have resistive layer and this resistive layer be by be sintered on the outer surface that is formed on the plain body of this variable resistor simultaneously with the plain body of variable resistor, this resistive layer contains under the situation of Pd, because sintering in the time of plain body of variable resistor and electrode layer, Bi and Pd alloying, the alloy of formation Bi and Pd on the interface of plain body of variable resistor and electrode layer.The wettability of the plain body of the alloy of Bi and Pd and variable resistor is poor especially, and the effect of the adhesion strength that reduces plain body of variable resistor and electrode layer is arranged.Therefore, be difficult to the adhesion strength of plain body of variable resistor and electrode layer is guaranteed at desirable state.
More than, preferred implementation of the present invention has been described, but the present invention may not be defined in these execution modes.
Though in the laminate sheet-like variable resistance 11 of the 1st execution mode, have pair of internal electrodes 31,41, be not limited thereto.For example, also can be same with the laminate sheet-like variable resistance 51,71 of the 2nd and the 3rd execution mode, have multilayer the 1st internal electrode 31 and the 2nd internal electrode 41.
The number of semiconductor light-emitting elements 1 of configuration is not limited to above-mentioned 4 on the laminate sheet-like variable resistance 81 of the 4th execution mode, so long as get final product more than 2.At this moment, the number of variable resistance part and outer electrode 25～28 becomes the number corresponding to semiconductor light-emitting elements 1.
Though in each variable resistance part of laminate sheet-like variable resistance 81, have pair of internal electrodes 31,41, be not limited thereto.In each variable resistance part, also can have a plurality of the 1st internal electrodes 31 and the 2nd internal electrode 41.
Though in laminate sheet-like variable resistance 81, a plurality of variable resistance parts also are not limited thereto along the stacked direction and the direction configuration that is parallel to variable resistance layer of variable resistance layer.A plurality of variable resistance parts also can be only along the stacked direction configuration of variable resistance layer.In addition, a plurality of variable resistance parts also can be only along the direction configuration that is parallel to variable resistance layer.In addition, the number of the variable resistance part of configuration also is not limited to above-mentioned number.
In the 1st～the 4th execution mode, the semiconductor LED that uses the GaN class is as semiconductor light-emitting elements 1, but is not limited thereto.Also can use as semiconductor light-emitting elements 1, for example, the nitride-based semiconductor LED beyond the GaN class (for example, the semiconductor LED of InGaNAs class etc.) or nitride-based beyond compound semiconductor LED or laser diode (LD:LaserDiode).
Obviously, from invention described above as can be seen the present invention can change in every way.These changes can not be regarded as a departure from of the present invention will the meaning and scope, and for those of ordinary skills, all such modifications obviously should be contemplated as falling with within the claim scope of the present invention.

Claims (21)

1. a light-emitting device is characterized in that,
Comprise semiconductor light-emitting elements and laminate sheet-like variable resistance;
Described laminate sheet-like variable resistance has:
Layered product disposes variable resistance part on this layered product, and it is main component and the variable resistance layer of performance voltage non linear characteristic and a plurality of internal electrodes that dispose in the mode that clips this variable resistance layer that this variable resistance part has with ZnO,
A plurality of outer electrodes, it is configured on the outer surface of described layered product, is connected to the internal electrode of the correspondence in described a plurality of internal electrode simultaneously;
Described semiconductor light-emitting elements is configured on the described laminated-type sheet-like variable resistance, is connected in the mode that is connected in parallel in described variable resistance part on the outer electrode of the correspondence in described a plurality of outer electrode,
Described a plurality of outer electrode comprises:
A pair of the 1st outer electrode that on the 1st outer surface of described layered product, disposes and
With the 2nd outer surface of described the 1st outer surface described layered product in opposite directions on a pair of the 2nd outer electrode that disposes;
Described a plurality of internal electrode comprises:
The 1st electrode part that in described a plurality of internal electrodes, overlaps each other between the adjacent internal electrode and
The 2nd electrode part of partly drawing from described the 1st electrode in the mode of on described the 1st outer surface and described the 2nd outer surface, exposing;
Described a pair of the 1st outer electrode and described a pair of the 2nd outer electrode partly are electrically connected on the internal electrode of the described correspondence in described a plurality of internal electrode respectively by described the 2nd electrode.
2. light-emitting device as claimed in claim 1 is characterized in that,
Described semiconductor light-emitting elements is configured to, upwardly extending of its side with respect to the stacked direction of the described layered product in being parallel to described laminate sheet-like variable resistance.
3. light-emitting device as claimed in claim 1 is characterized in that,
Described a plurality of outer electrode comprises the pair of end electrode;
Described pair of end electrode comprises respectively:
The 1st electrode part, it was configured in to upwardly extending while of the side of the stacked direction that is parallel to described layered product mutually on any outer surface in opposite directions the outer surface,
The 2nd electrode part, it is configured in adjacent with a described outer surface time on the upwardly extending outer surface in the side of the stacked direction that is parallel to described layered product.
4. light-emitting device as claimed in claim 1 is characterized in that,
Described variable resistance layer contains Pr;
Described a plurality of outer electrode has electrode layer, and this electrode layer is by being sintered on the described outer surface that is formed at described layered product simultaneously with described layered product and comprising Pd.
5. light-emitting device as claimed in claim 1 is characterized in that,
Described variable resistance layer contains Pr;
Described a plurality of outer electrode has on the outer surface that is configured in described layered product and comprises the electrode layer of Pd;
At the near interface of described layered product and described electrode layer, there are Pr contained in the described variable resistance layer and the oxide of contained Pd in described electrode layer.
6. light-emitting device as claimed in claim 5 is characterized in that,
Described electrode layer by with described layered product sintering simultaneously, be formed on the described outer surface of described layered product.
7. light-emitting device as claimed in claim 1 is characterized in that,
Described the 1st outer surface and described the 2nd outer surface extend to the direction of the stacked direction that is parallel to described layered product.
8. light-emitting device as claimed in claim 1 is characterized in that,
Described semiconductor light-emitting elements is connected in described a pair of the 2nd outer electrode by projection, is configured on the described laminate sheet-like variable resistance.
9. light-emitting device as claimed in claim 1 is characterized in that,
Described semiconductor light-emitting elements has the semiconductor regions of the 1st conductivity type and the semiconductor regions of the 2nd conductivity type, according to the voltage between the semiconductor regions of semiconductor regions that puts on described the 1st conductivity type and described the 2nd conductivity type and luminous.
10. a light-emitting device is characterized in that,
Comprise a plurality of semiconductor light-emitting elements and laminate sheet-like variable resistance;
Described laminate sheet-like variable resistance has:
Layered product disposes variable resistance part on this layered product, and it is main component and the variable resistance layer of performance voltage non linear characteristic and a plurality of internal electrodes that dispose in the mode that clips this variable resistance layer that this variable resistance part has with ZnO,
A plurality of outer electrodes, it is configured on the outer surface of described layered product, is connected to the internal electrode of the correspondence in described a plurality of internal electrode simultaneously;
Described a plurality of semiconductor light-emitting elements is configured on the described laminated-type sheet-like variable resistance, is connected in the mode that is connected in parallel in described variable resistance part on the outer electrode of the correspondence in described a plurality of outer electrode,
On described layered product, dispose a plurality of described variable resistance parts along the direction of stipulating;
Described a plurality of outer electrode has:
A plurality of the 1st outer electrodes that on the 1st outer surface of described layered product, dispose and
With the 2nd outer surface of described the 1st outer surface described layered product in opposite directions on a plurality of the 2nd outer electrodes of disposing;
Described the 1st outer surface extends to the direction of the direction that is parallel to described regulation;
Described a plurality of internal electrodes that described a plurality of variable resistance part has comprise:
The 1st electrode part that in described a plurality of internal electrodes, overlaps each other between the adjacent internal electrode and
With the described the 1st and described the 2nd outer surface on the mode exposed the 2nd electrode part of partly drawing from described the 1st electrode;
Described a plurality of the 1st outer electrode and described a plurality of the 2nd outer electrode partly are electrically connected on described the 1st electrode part of the internal electrode of the correspondence in described a plurality of internal electrode respectively by described the 2nd electrode;
Described a plurality of semiconductor light-emitting elements is configured on the described laminate sheet-like variable resistance, to be connected in parallel in the mode of variable resistance part corresponding in described a plurality of variable resistance part, be connected to the 2nd corresponding in described a plurality of the 2nd outer electrode outer electrode.
11. light-emitting device as claimed in claim 10 is characterized in that,
Described the 1st outer surface and described the 2nd outer surface extend to the direction of the stacked direction that is parallel to described layered product.
12. light-emitting device as claimed in claim 10 is characterized in that,
Described variable resistance layer contains Pr;
Described a plurality of the 1st outer electrode has electrode layer respectively, and this electrode layer is by being formed on described the 1st outer surface with described layered product while sintering and comprising Pd;
Described a plurality of the 2nd outer electrode has electrode layer respectively, and this electrode layer is by being formed on described the 2nd outer surface with described layered product while sintering and comprising Pd.
13. light-emitting device as claimed in claim 10 is characterized in that,
Described variable resistance layer contains Pr;
Described a plurality of the 1st outer electrode has the electrode layer that is configured on described the 1st outer surface and comprises Pd respectively;
Described a plurality of the 2nd outer electrode has the electrode layer that is configured on described the 2nd outer surface and comprises Pd respectively;
At the near interface of described layered product and described each electrode layer, there is the oxide of Pd contained in Pr contained in the described variable resistance layer and the described electrode layer.
14. light-emitting device as claimed in claim 13 is characterized in that,
Described electrode layer by with described layered product sintering simultaneously, be formed on the described the 1st and described the 2nd outer surface on.
15. light-emitting device as claimed in claim 10 is characterized in that,
Described layered product is to be the roughly tabular of interarea with described the 1st outer surface and described the 2nd outer surface;
The interval of described the 1st outer surface and described the 2nd outer surface is set to, less than the length on the direction of described regulation of described layered product.
16. light-emitting device as claimed in claim 10 is characterized in that,
The direction of described regulation is the stacked direction of described variable resistance layer.
17. light-emitting device as claimed in claim 10 is characterized in that,
The direction of described regulation is the direction that is parallel to described variable resistance layer.
18. light-emitting device as claimed in claim 10 is characterized in that,
Described a plurality of the 1st outer electrode is arranged as 2 dimensions and arranges on described the 1st outer surface,
Described a plurality of the 2nd outer electrode is arranged 2 dimensions and arranges on described the 2nd outer surface.
19. light-emitting device as claimed in claim 10 is characterized in that,
Described each semiconductor light-emitting elements is connected in the 2nd outer electrode of described correspondence by projection, is configured on the described laminate sheet-like variable resistance.
20. a light-emitting device is characterized in that,
Possess a plurality of semiconductor light-emitting elements and laminate sheet-like variable resistance;
Described laminate sheet-like variable resistance has layered product and a plurality of outer electrode,
Direction along regulation on the described layered product disposes a plurality of variable resistance parts, and it is main component and the variable resistance layer of performance voltage non linear characteristic and a plurality of internal electrodes that dispose in the mode that clips this variable resistance layer that each variable resistance part has with ZnO,
Described a plurality of outer electrode is configured on the outer surface of described layered product, is connected to the internal electrode of the correspondence in described a plurality of internal electrode simultaneously,
Described a plurality of semiconductor light-emitting elements is configured on the described laminate sheet-like variable resistance, is connected in parallel in the variable resistance part of the correspondence in described a plurality of variable resistance part respectively,
Described a plurality of outer electrode comprises:
A pair of the 1st outer electrode that on the 1st outer surface of described layered product, disposes and
With the 2nd outer surface of described the 1st outer surface described layered product in opposite directions on a pair of the 2nd outer electrode that disposes;
Described a plurality of internal electrode comprises:
The 1st electrode part that in described a plurality of internal electrodes, overlaps each other between the adjacent internal electrode and
The 2nd electrode part of partly drawing from described the 1st electrode in the mode of on described the 1st outer surface and described the 2nd outer surface, exposing;
Described a pair of the 1st outer electrode and described a pair of the 2nd outer electrode partly are electrically connected on the internal electrode of the described correspondence in described a plurality of internal electrode respectively by described the 2nd electrode.
21. a light-emitting device is characterized in that,
Possess a plurality of semiconductor light-emitting elements and laminate sheet-like variable resistance;
Described laminate sheet-like variable resistance possesses:
Be laminated with ZnO the layered product of a plurality of variable resistance layers that are main component and performance voltage non linear characteristic,
A plurality of the 1st outer electrodes that on the 1st outer surface of described layered product, dispose and
With the 2nd outer surface of described the 1st outer surface described layered product in opposite directions on a plurality of the 2nd outer electrodes of disposing;
Described the 1st outer surface extends to the direction of the stacked direction that is parallel to described a plurality of variable resistance layers;
In described layered product, has described variable resistance layer and a plurality of variable resistance parts of a plurality of internal electrodes of disposing in the mode that clips described variable resistance layer, along the direction configuration that is parallel to described the 1st outer surface;
Described a plurality of internal electrode comprises:
The 1st electrode part that in described a plurality of internal electrodes, overlaps each other between the adjacent internal electrode and
With the described the 1st and the mode exposed of described the 2nd outer surface the 2nd electrode part of partly drawing from described the 1st electrode;
Described a plurality of the 1st outer electrode and described a plurality of the 2nd outer electrode partly are electrically connected in described a plurality of internal electrode described the 1st electrode part of corresponding internal electrode respectively by described the 2nd electrode;
Described a plurality of semiconductor light-emitting elements is configured on the described laminate sheet-like variable resistance, to be connected in parallel in the mode of variable resistance part corresponding in described a plurality of variable resistance part, is connected to the 2nd corresponding in described a plurality of the 2nd outer electrode outer electrode.
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