CN100470739C - 一种便携式信息终端和一种摄象机 - Google Patents

一种便携式信息终端和一种摄象机 Download PDF

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Publication number
CN100470739C
CN100470739C CNB2006101007978A CN200610100797A CN100470739C CN 100470739 C CN100470739 C CN 100470739C CN B2006101007978 A CNB2006101007978 A CN B2006101007978A CN 200610100797 A CN200610100797 A CN 200610100797A CN 100470739 C CN100470739 C CN 100470739C
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CN
China
Prior art keywords
tft
film
active layer
circuit
catalytic elements
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Expired - Fee Related
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CNB2006101007978A
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English (en)
Chinese (zh)
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CN1897233A (zh
Inventor
山崎舜平
大谷久
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1897233A publication Critical patent/CN1897233A/zh
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Publication of CN100470739C publication Critical patent/CN100470739C/zh
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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
CNB2006101007978A 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机 Expired - Fee Related CN100470739C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2207797A JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法
JP22077/1997 1997-01-20
JP123088/1997 1997-04-26

Related Parent Applications (1)

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CNB2004100642546A Division CN100377363C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Publications (2)

Publication Number Publication Date
CN1897233A CN1897233A (zh) 2007-01-17
CN100470739C true CN100470739C (zh) 2009-03-18

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Family Applications (3)

Application Number Title Priority Date Filing Date
CNB2006101007978A Expired - Fee Related CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CN200610101412XA Expired - Fee Related CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途
CNB2006101014083A Expired - Fee Related CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN200610101412XA Expired - Fee Related CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途
CNB2006101014083A Expired - Fee Related CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机

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JP (1) JP3753827B2 (enExample)
CN (3) CN100470739C (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3846057B2 (ja) * 1998-09-03 2006-11-15 セイコーエプソン株式会社 電気光学装置の駆動回路及び電気光学装置並びに電子機器
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP4823543B2 (ja) * 2004-03-26 2011-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102114012B1 (ko) 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN105576037B (zh) * 2016-01-08 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管及其制作和测试方法、阵列基板和显示装置
US20190229173A1 (en) * 2018-01-23 2019-07-25 Int Tech Co., Ltd. Light emitting device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572211A (en) * 1994-01-18 1996-11-05 Vivid Semiconductor, Inc. Integrated circuit for driving liquid crystal display using multi-level D/A converter
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions

Also Published As

Publication number Publication date
CN1877861B (zh) 2010-05-12
CN100505309C (zh) 2009-06-24
CN1921149A (zh) 2007-02-28
JP3753827B2 (ja) 2006-03-08
CN1877861A (zh) 2006-12-13
CN1897233A (zh) 2007-01-17
JPH10209465A (ja) 1998-08-07

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