CN100454698C - 半导体波导器件中输出光束发散的控制 - Google Patents

半导体波导器件中输出光束发散的控制 Download PDF

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Publication number
CN100454698C
CN100454698C CNB2004800349144A CN200480034914A CN100454698C CN 100454698 C CN100454698 C CN 100454698C CN B2004800349144 A CNB2004800349144 A CN B2004800349144A CN 200480034914 A CN200480034914 A CN 200480034914A CN 100454698 C CN100454698 C CN 100454698C
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cladding
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Expired - Fee Related
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CNB2004800349144A
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Chinese (zh)
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CN1886876A (zh
Inventor
仇伯仓
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Intense Ltd By Share Ltd
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INTANS Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CNB2004800349144A 2003-10-11 2004-09-16 半导体波导器件中输出光束发散的控制 Expired - Fee Related CN100454698C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0323905A GB2406968B (en) 2003-10-11 2003-10-11 Control of output beam divergence in a semiconductor waveguide device
GB0323905.0 2003-10-11

Publications (2)

Publication Number Publication Date
CN1886876A CN1886876A (zh) 2006-12-27
CN100454698C true CN100454698C (zh) 2009-01-21

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Family Applications (1)

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CNB2004800349144A Expired - Fee Related CN100454698C (zh) 2003-10-11 2004-09-16 半导体波导器件中输出光束发散的控制

Country Status (9)

Country Link
US (1) US7409134B2 (enExample)
EP (1) EP1676347B1 (enExample)
JP (1) JP2007508687A (enExample)
CN (1) CN100454698C (enExample)
AT (1) ATE369642T1 (enExample)
CA (1) CA2541961A1 (enExample)
DE (1) DE602004008096T2 (enExample)
GB (1) GB2406968B (enExample)
WO (1) WO2005043702A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051315B4 (de) * 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102007061458A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
TWI721167B (zh) * 2017-05-11 2021-03-11 光環科技股份有限公司 具小垂直發射角的邊射型雷射元件
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN109193342B (zh) * 2018-10-15 2019-11-15 中国科学院理化技术研究所 一种半导体激光器
CN109672088A (zh) * 2018-12-29 2019-04-23 江西德瑞光电技术有限责任公司 一种半导体激光芯片制造方法
CN111755949B (zh) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法
WO2024018500A1 (ja) 2022-07-19 2024-01-25 三菱電機株式会社 半導体受光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence
US5923689A (en) * 1998-01-22 1999-07-13 National Science Council Red semiconductor laser of low beam divergence
US6028877A (en) * 1996-12-13 2000-02-22 Nec Corporation Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
US20010028668A1 (en) * 2000-04-10 2001-10-11 Toshiaki Fukunaga Semiconductor laser element
CN1347581A (zh) * 1999-03-26 2002-05-01 松下电器产业株式会社 带有应变补偿层的半导体结构及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632339B2 (ja) 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ
JPH0680859B2 (ja) * 1984-12-27 1994-10-12 ソニー株式会社 半導体レーザー
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
DE3751548T2 (de) * 1986-07-25 1996-04-11 Mitsubishi Electric Corp Halbleiterlaser.
US4882734A (en) * 1988-03-09 1989-11-21 Xerox Corporation Quantum well heterostructure lasers with low current density threshold and higher TO values
GB9116871D0 (en) * 1991-08-05 1991-09-18 Unilever Plc Hair care composition
JPH05243669A (ja) * 1992-02-28 1993-09-21 Hitachi Ltd 半導体レーザ素子
JPH05275798A (ja) * 1992-03-25 1993-10-22 Eastman Kodak Japan Kk レーザダイオード
EP0714558B1 (en) * 1994-06-20 1999-01-20 Koninklijke Philips Electronics N.V. Radiation-emitting semiconductor index-guided diode
FR2749447B1 (fr) 1996-06-04 1998-07-10 France Telecom Dispositif optique a guide de lumiere semi-conducteur, a faisceau emergent de faible divergence, application aux lasers de fabry-perot et a contre-reaction distribuee
JP4850324B2 (ja) * 1999-07-16 2012-01-11 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 窒化物半導体素子および窒化物半導体レーザ素子
DE10046580A1 (de) * 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
JP2002299768A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体発光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence
US6028877A (en) * 1996-12-13 2000-02-22 Nec Corporation Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
US5923689A (en) * 1998-01-22 1999-07-13 National Science Council Red semiconductor laser of low beam divergence
CN1347581A (zh) * 1999-03-26 2002-05-01 松下电器产业株式会社 带有应变补偿层的半导体结构及其制备方法
US20010028668A1 (en) * 2000-04-10 2001-10-11 Toshiaki Fukunaga Semiconductor laser element

Also Published As

Publication number Publication date
EP1676347A1 (en) 2006-07-05
CN1886876A (zh) 2006-12-27
GB2406968A (en) 2005-04-13
GB0323905D0 (en) 2003-11-12
US20060274793A1 (en) 2006-12-07
JP2007508687A (ja) 2007-04-05
GB2406968B (en) 2006-12-06
US7409134B2 (en) 2008-08-05
DE602004008096D1 (de) 2007-09-20
DE602004008096T2 (de) 2008-04-24
WO2005043702A1 (en) 2005-05-12
CA2541961A1 (en) 2005-05-12
EP1676347B1 (en) 2007-08-08
ATE369642T1 (de) 2007-08-15

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CF01 Termination of patent right due to non-payment of annual fee